JP2004535058A5 - - Google Patents
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- Publication number
- JP2004535058A5 JP2004535058A5 JP2002564807A JP2002564807A JP2004535058A5 JP 2004535058 A5 JP2004535058 A5 JP 2004535058A5 JP 2002564807 A JP2002564807 A JP 2002564807A JP 2002564807 A JP2002564807 A JP 2002564807A JP 2004535058 A5 JP2004535058 A5 JP 2004535058A5
- Authority
- JP
- Japan
- Prior art keywords
- diffusion barrier
- attached
- layer
- dielectric mirror
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010410 layer Substances 0.000 claims 22
- 230000004888 barrier function Effects 0.000 claims 18
- 238000009792 diffusion process Methods 0.000 claims 18
- 239000004065 semiconductor Substances 0.000 claims 18
- 239000012535 impurity Substances 0.000 claims 8
- 229910052751 metal Inorganic materials 0.000 claims 5
- 239000002184 metal Substances 0.000 claims 5
- 239000002318 adhesion promoter Substances 0.000 claims 4
- 239000011247 coating layer Substances 0.000 claims 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 4
- 230000007704 transition Effects 0.000 claims 4
- 238000000034 method Methods 0.000 claims 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 2
- 229910052697 platinum Inorganic materials 0.000 claims 2
- 239000010936 titanium Substances 0.000 claims 2
- 229910052719 titanium Inorganic materials 0.000 claims 2
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10107349A DE10107349A1 (de) | 2001-02-15 | 2001-02-15 | Oberflächenemittierender Halbleiterlaser |
| PCT/EP2002/001656 WO2002065599A2 (de) | 2001-02-15 | 2002-02-15 | Oberflächenemittierender halbleiterlaser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2004535058A JP2004535058A (ja) | 2004-11-18 |
| JP2004535058A5 true JP2004535058A5 (enExample) | 2005-06-09 |
Family
ID=7674324
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002564807A Pending JP2004535058A (ja) | 2001-02-15 | 2002-02-15 | 表面放射型半導体レーザ |
Country Status (12)
| Country | Link |
|---|---|
| US (1) | US7170917B2 (enExample) |
| EP (1) | EP1366548B1 (enExample) |
| JP (1) | JP2004535058A (enExample) |
| KR (1) | KR100626891B1 (enExample) |
| CN (1) | CN1263207C (enExample) |
| AT (1) | ATE294457T1 (enExample) |
| CA (1) | CA2438341A1 (enExample) |
| DE (2) | DE10107349A1 (enExample) |
| DK (1) | DK1366548T3 (enExample) |
| ES (1) | ES2240725T3 (enExample) |
| IL (1) | IL157362A0 (enExample) |
| WO (1) | WO2002065599A2 (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10107349A1 (de) | 2001-02-15 | 2002-08-29 | Markus-Christian Amann | Oberflächenemittierender Halbleiterlaser |
| DE10147888A1 (de) * | 2001-09-28 | 2003-04-24 | Osram Opto Semiconductors Gmbh | Optisch gepumpter vertikal emittierender Halbleiterlaser |
| DE10305079B4 (de) * | 2002-11-27 | 2005-04-28 | Vertilas Gmbh | Verfahren zur Herstellung eines vergrabenen Tunnelkontakts in einem oberflächenemittierenden Halbleiterlaser sowie oberflächenemittierender Halbleiterlaser |
| US6936486B2 (en) * | 2002-11-19 | 2005-08-30 | Jdsu Uniphase Corporation | Low voltage multi-junction vertical cavity surface emitting laser |
| JP2006508550A (ja) * | 2002-11-27 | 2006-03-09 | フェルティラス ゲーエムベーハー | 面発光型半導体レーザの埋込トンネル接合の製造方法 |
| US6870868B2 (en) * | 2003-02-18 | 2005-03-22 | Eastman Kodak Company | Organic laser having improved linearity |
| DE10353960B4 (de) * | 2003-10-16 | 2006-03-23 | Vertilas Gmbh | Oberflächenemittierender Halbleiterlaser mit strukturiertem Wellenleiter |
| US7372886B2 (en) * | 2004-06-07 | 2008-05-13 | Avago Technologies Fiber Ip Pte Ltd | High thermal conductivity vertical cavity surface emitting laser (VCSEL) |
| JP2008198957A (ja) * | 2007-02-16 | 2008-08-28 | Hitachi Ltd | 半導体レーザ装置および光増幅装置 |
| JPWO2008114707A1 (ja) | 2007-03-22 | 2010-07-01 | 日本電気株式会社 | 面発光型半導体レーザ |
| JP2012119408A (ja) * | 2010-11-30 | 2012-06-21 | Nippon Telegr & Teleph Corp <Ntt> | 半導体素子、半導体光素子及び半導体集積素子 |
| KR20130132064A (ko) * | 2012-05-25 | 2013-12-04 | (주)파이버피아 | 수직 면발광 레이저다이오드 |
| US10033158B1 (en) | 2016-12-19 | 2018-07-24 | Osram Opto Semiconductors Gmbh | Semiconductor laser, laser assembly and method of making a semiconductor laser |
| CN106856296B (zh) * | 2016-12-27 | 2019-07-05 | 中国科学院半导体研究所 | 一种长波长垂直腔面发射激光器 |
| CN108927601A (zh) * | 2018-07-18 | 2018-12-04 | 张家港市顶峰激光科技有限公司 | 一种利用半导体激光束进行材料表面整平设备 |
| US11695093B2 (en) | 2018-11-21 | 2023-07-04 | Analog Devices, Inc. | Superlattice photodetector/light emitting diode |
| CN114498285B (zh) * | 2022-01-24 | 2024-02-06 | 中国科学院半导体研究所 | 一种半导体激光器 |
| US12272924B2 (en) | 2022-12-12 | 2025-04-08 | Bandwidth10, LTD. | HCG tunable VCSEL system with ASIC for processing information and firmware |
| US12483003B2 (en) | 2022-12-12 | 2025-11-25 | Bandwidth10, LTD. | HCG tunable VCSEL with integrated detector in the sacrificial layer |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3444019A1 (de) | 1984-12-03 | 1986-06-05 | Siemens AG, 1000 Berlin und 8000 München | Strahlung erzeugende halbleiterdiode mit einem kleinflaechigen kontakt mit grossflaechigerem oberflaechenschutz |
| US5661075A (en) | 1995-02-06 | 1997-08-26 | Motorola | Method of making a VCSEL with passivation |
| US5831295A (en) * | 1995-12-01 | 1998-11-03 | Motorola, Inc. | Current confinement via defect generator and hetero-interface interaction |
| AU3600697A (en) | 1996-08-09 | 1998-03-06 | W.L. Gore & Associates, Inc. | Vertical cavity surface emitting laser with tunnel junction |
| FR2761822B1 (fr) | 1997-04-03 | 1999-05-07 | Alsthom Cge Alcatel | Laser semiconducteur a emission de surface |
| US5936266A (en) * | 1997-07-22 | 1999-08-10 | The Board Of Trustees Of The University Of Illinois | Semiconductor devices and methods with tunnel contact hole sources |
| DE10107349A1 (de) | 2001-02-15 | 2002-08-29 | Markus-Christian Amann | Oberflächenemittierender Halbleiterlaser |
-
2001
- 2001-02-15 DE DE10107349A patent/DE10107349A1/de not_active Withdrawn
-
2002
- 2002-02-15 WO PCT/EP2002/001656 patent/WO2002065599A2/de not_active Ceased
- 2002-02-15 US US10/468,183 patent/US7170917B2/en not_active Expired - Lifetime
- 2002-02-15 DE DE50202912T patent/DE50202912D1/de not_active Expired - Lifetime
- 2002-02-15 IL IL15736202A patent/IL157362A0/xx unknown
- 2002-02-15 CN CNB028050193A patent/CN1263207C/zh not_active Expired - Fee Related
- 2002-02-15 EP EP02719854A patent/EP1366548B1/de not_active Expired - Lifetime
- 2002-02-15 JP JP2002564807A patent/JP2004535058A/ja active Pending
- 2002-02-15 CA CA002438341A patent/CA2438341A1/en not_active Abandoned
- 2002-02-15 KR KR1020037010705A patent/KR100626891B1/ko not_active Expired - Fee Related
- 2002-02-15 DK DK02719854T patent/DK1366548T3/da active
- 2002-02-15 ES ES02719854T patent/ES2240725T3/es not_active Expired - Lifetime
- 2002-02-15 AT AT02719854T patent/ATE294457T1/de not_active IP Right Cessation
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