KR100626891B1 - 표면 발광 레이저 반도체 - Google Patents

표면 발광 레이저 반도체 Download PDF

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Publication number
KR100626891B1
KR100626891B1 KR1020037010705A KR20037010705A KR100626891B1 KR 100626891 B1 KR100626891 B1 KR 100626891B1 KR 1020037010705 A KR1020037010705 A KR 1020037010705A KR 20037010705 A KR20037010705 A KR 20037010705A KR 100626891 B1 KR100626891 B1 KR 100626891B1
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layer
added
diffusion barrier
semiconductor
dielectric mirror
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KR20030084928A (ko
Inventor
마커스-크리스티안 아만
마커스 오르트지퍼
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버티라스 게엠베하
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0217—Removal of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H01S5/04253—Electrodes, e.g. characterised by the structure characterised by the material having specific optical properties, e.g. transparent electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18375—Structure of the reflectors, e.g. hybrid mirrors based on metal reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18377—Structure of the reflectors, e.g. hybrid mirrors comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3072—Diffusion blocking layer, i.e. a special layer blocking diffusion of dopants
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3095—Tunnel junction

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
KR1020037010705A 2001-02-15 2002-02-15 표면 발광 레이저 반도체 Expired - Fee Related KR100626891B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10107349A DE10107349A1 (de) 2001-02-15 2001-02-15 Oberflächenemittierender Halbleiterlaser
DE10107349.6 2001-02-15
PCT/EP2002/001656 WO2002065599A2 (de) 2001-02-15 2002-02-15 Oberflächenemittierender halbleiterlaser

Publications (2)

Publication Number Publication Date
KR20030084928A KR20030084928A (ko) 2003-11-01
KR100626891B1 true KR100626891B1 (ko) 2006-09-20

Family

ID=7674324

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020037010705A Expired - Fee Related KR100626891B1 (ko) 2001-02-15 2002-02-15 표면 발광 레이저 반도체

Country Status (12)

Country Link
US (1) US7170917B2 (enExample)
EP (1) EP1366548B1 (enExample)
JP (1) JP2004535058A (enExample)
KR (1) KR100626891B1 (enExample)
CN (1) CN1263207C (enExample)
AT (1) ATE294457T1 (enExample)
CA (1) CA2438341A1 (enExample)
DE (2) DE10107349A1 (enExample)
DK (1) DK1366548T3 (enExample)
ES (1) ES2240725T3 (enExample)
IL (1) IL157362A0 (enExample)
WO (1) WO2002065599A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013176344A1 (ko) * 2012-05-25 2013-11-28 (주)파이버피아 수직 면발광 레이저다이오드

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10107349A1 (de) 2001-02-15 2002-08-29 Markus-Christian Amann Oberflächenemittierender Halbleiterlaser
DE10147888A1 (de) * 2001-09-28 2003-04-24 Osram Opto Semiconductors Gmbh Optisch gepumpter vertikal emittierender Halbleiterlaser
DE10305079B4 (de) * 2002-11-27 2005-04-28 Vertilas Gmbh Verfahren zur Herstellung eines vergrabenen Tunnelkontakts in einem oberflächenemittierenden Halbleiterlaser sowie oberflächenemittierender Halbleiterlaser
US6936486B2 (en) * 2002-11-19 2005-08-30 Jdsu Uniphase Corporation Low voltage multi-junction vertical cavity surface emitting laser
JP2006508550A (ja) * 2002-11-27 2006-03-09 フェルティラス ゲーエムベーハー 面発光型半導体レーザの埋込トンネル接合の製造方法
US6870868B2 (en) * 2003-02-18 2005-03-22 Eastman Kodak Company Organic laser having improved linearity
DE10353960B4 (de) * 2003-10-16 2006-03-23 Vertilas Gmbh Oberflächenemittierender Halbleiterlaser mit strukturiertem Wellenleiter
US7372886B2 (en) * 2004-06-07 2008-05-13 Avago Technologies Fiber Ip Pte Ltd High thermal conductivity vertical cavity surface emitting laser (VCSEL)
JP2008198957A (ja) * 2007-02-16 2008-08-28 Hitachi Ltd 半導体レーザ装置および光増幅装置
JPWO2008114707A1 (ja) 2007-03-22 2010-07-01 日本電気株式会社 面発光型半導体レーザ
JP2012119408A (ja) * 2010-11-30 2012-06-21 Nippon Telegr & Teleph Corp <Ntt> 半導体素子、半導体光素子及び半導体集積素子
US10033158B1 (en) 2016-12-19 2018-07-24 Osram Opto Semiconductors Gmbh Semiconductor laser, laser assembly and method of making a semiconductor laser
CN106856296B (zh) * 2016-12-27 2019-07-05 中国科学院半导体研究所 一种长波长垂直腔面发射激光器
CN108927601A (zh) * 2018-07-18 2018-12-04 张家港市顶峰激光科技有限公司 一种利用半导体激光束进行材料表面整平设备
US11695093B2 (en) 2018-11-21 2023-07-04 Analog Devices, Inc. Superlattice photodetector/light emitting diode
CN114498285B (zh) * 2022-01-24 2024-02-06 中国科学院半导体研究所 一种半导体激光器
US12272924B2 (en) 2022-12-12 2025-04-08 Bandwidth10, LTD. HCG tunable VCSEL system with ASIC for processing information and firmware
US12483003B2 (en) 2022-12-12 2025-11-25 Bandwidth10, LTD. HCG tunable VCSEL with integrated detector in the sacrificial layer

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3444019A1 (de) 1984-12-03 1986-06-05 Siemens AG, 1000 Berlin und 8000 München Strahlung erzeugende halbleiterdiode mit einem kleinflaechigen kontakt mit grossflaechigerem oberflaechenschutz
US5661075A (en) 1995-02-06 1997-08-26 Motorola Method of making a VCSEL with passivation
US5831295A (en) * 1995-12-01 1998-11-03 Motorola, Inc. Current confinement via defect generator and hetero-interface interaction
AU3600697A (en) 1996-08-09 1998-03-06 W.L. Gore & Associates, Inc. Vertical cavity surface emitting laser with tunnel junction
FR2761822B1 (fr) 1997-04-03 1999-05-07 Alsthom Cge Alcatel Laser semiconducteur a emission de surface
US5936266A (en) * 1997-07-22 1999-08-10 The Board Of Trustees Of The University Of Illinois Semiconductor devices and methods with tunnel contact hole sources
DE10107349A1 (de) 2001-02-15 2002-08-29 Markus-Christian Amann Oberflächenemittierender Halbleiterlaser

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013176344A1 (ko) * 2012-05-25 2013-11-28 (주)파이버피아 수직 면발광 레이저다이오드

Also Published As

Publication number Publication date
WO2002065599A3 (de) 2002-10-24
CN1491468A (zh) 2004-04-21
JP2004535058A (ja) 2004-11-18
IL157362A0 (en) 2004-02-19
CN1263207C (zh) 2006-07-05
CA2438341A1 (en) 2002-08-22
EP1366548B1 (de) 2005-04-27
DE50202912D1 (de) 2005-06-02
ES2240725T3 (es) 2005-10-16
ATE294457T1 (de) 2005-05-15
WO2002065599A2 (de) 2002-08-22
KR20030084928A (ko) 2003-11-01
DK1366548T3 (da) 2005-06-27
US7170917B2 (en) 2007-01-30
DE10107349A1 (de) 2002-08-29
EP1366548A2 (de) 2003-12-03
US20040179568A1 (en) 2004-09-16

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