JP2004535058A - 表面放射型半導体レーザ - Google Patents
表面放射型半導体レーザ Download PDFInfo
- Publication number
- JP2004535058A JP2004535058A JP2002564807A JP2002564807A JP2004535058A JP 2004535058 A JP2004535058 A JP 2004535058A JP 2002564807 A JP2002564807 A JP 2002564807A JP 2002564807 A JP2002564807 A JP 2002564807A JP 2004535058 A JP2004535058 A JP 2004535058A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor laser
- diffusion barrier
- contact
- dielectric mirror
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 84
- 238000009792 diffusion process Methods 0.000 claims abstract description 40
- 230000004888 barrier function Effects 0.000 claims abstract description 37
- 239000012535 impurity Substances 0.000 claims abstract description 17
- 239000010410 layer Substances 0.000 claims description 127
- 238000000034 method Methods 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 15
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 15
- 239000010931 gold Substances 0.000 claims description 14
- 230000008569 process Effects 0.000 claims description 13
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 12
- 229910052737 gold Inorganic materials 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 230000007704 transition Effects 0.000 claims description 11
- 238000002310 reflectometry Methods 0.000 claims description 7
- 239000002318 adhesion promoter Substances 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- 239000011247 coating layer Substances 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 238000001465 metallisation Methods 0.000 claims description 3
- 230000005641 tunneling Effects 0.000 claims 2
- 238000010586 diagram Methods 0.000 description 11
- 230000008901 benefit Effects 0.000 description 4
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000001427 coherent effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0217—Removal of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
- H01S5/04253—Electrodes, e.g. characterised by the structure characterised by the material having specific optical properties, e.g. transparent electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18375—Structure of the reflectors, e.g. hybrid mirrors based on metal reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18377—Structure of the reflectors, e.g. hybrid mirrors comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3072—Diffusion blocking layer, i.e. a special layer blocking diffusion of dopants
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3095—Tunnel junction
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10107349A DE10107349A1 (de) | 2001-02-15 | 2001-02-15 | Oberflächenemittierender Halbleiterlaser |
| PCT/EP2002/001656 WO2002065599A2 (de) | 2001-02-15 | 2002-02-15 | Oberflächenemittierender halbleiterlaser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2004535058A true JP2004535058A (ja) | 2004-11-18 |
| JP2004535058A5 JP2004535058A5 (enExample) | 2005-06-09 |
Family
ID=7674324
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002564807A Pending JP2004535058A (ja) | 2001-02-15 | 2002-02-15 | 表面放射型半導体レーザ |
Country Status (12)
| Country | Link |
|---|---|
| US (1) | US7170917B2 (enExample) |
| EP (1) | EP1366548B1 (enExample) |
| JP (1) | JP2004535058A (enExample) |
| KR (1) | KR100626891B1 (enExample) |
| CN (1) | CN1263207C (enExample) |
| AT (1) | ATE294457T1 (enExample) |
| CA (1) | CA2438341A1 (enExample) |
| DE (2) | DE10107349A1 (enExample) |
| DK (1) | DK1366548T3 (enExample) |
| ES (1) | ES2240725T3 (enExample) |
| IL (1) | IL157362A0 (enExample) |
| WO (1) | WO2002065599A2 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7974328B2 (en) | 2007-03-22 | 2011-07-05 | Nec Corporation | Surface-emission type semiconductor laser |
| JP2012119408A (ja) * | 2010-11-30 | 2012-06-21 | Nippon Telegr & Teleph Corp <Ntt> | 半導体素子、半導体光素子及び半導体集積素子 |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10107349A1 (de) | 2001-02-15 | 2002-08-29 | Markus-Christian Amann | Oberflächenemittierender Halbleiterlaser |
| DE10147888A1 (de) * | 2001-09-28 | 2003-04-24 | Osram Opto Semiconductors Gmbh | Optisch gepumpter vertikal emittierender Halbleiterlaser |
| DE10305079B4 (de) * | 2002-11-27 | 2005-04-28 | Vertilas Gmbh | Verfahren zur Herstellung eines vergrabenen Tunnelkontakts in einem oberflächenemittierenden Halbleiterlaser sowie oberflächenemittierender Halbleiterlaser |
| US6936486B2 (en) * | 2002-11-19 | 2005-08-30 | Jdsu Uniphase Corporation | Low voltage multi-junction vertical cavity surface emitting laser |
| DK1568112T3 (da) * | 2002-11-27 | 2006-10-30 | Vertilas Gmbh | Fremgangsmåde til fremstilling af en indlejret tunnelovergang i en overfladeemitterende halvlederlaser |
| US6870868B2 (en) * | 2003-02-18 | 2005-03-22 | Eastman Kodak Company | Organic laser having improved linearity |
| DE10353960B4 (de) * | 2003-10-16 | 2006-03-23 | Vertilas Gmbh | Oberflächenemittierender Halbleiterlaser mit strukturiertem Wellenleiter |
| US7372886B2 (en) * | 2004-06-07 | 2008-05-13 | Avago Technologies Fiber Ip Pte Ltd | High thermal conductivity vertical cavity surface emitting laser (VCSEL) |
| JP2008198957A (ja) * | 2007-02-16 | 2008-08-28 | Hitachi Ltd | 半導体レーザ装置および光増幅装置 |
| KR20130132064A (ko) * | 2012-05-25 | 2013-12-04 | (주)파이버피아 | 수직 면발광 레이저다이오드 |
| US10033158B1 (en) | 2016-12-19 | 2018-07-24 | Osram Opto Semiconductors Gmbh | Semiconductor laser, laser assembly and method of making a semiconductor laser |
| CN106856296B (zh) * | 2016-12-27 | 2019-07-05 | 中国科学院半导体研究所 | 一种长波长垂直腔面发射激光器 |
| CN108927601A (zh) * | 2018-07-18 | 2018-12-04 | 张家港市顶峰激光科技有限公司 | 一种利用半导体激光束进行材料表面整平设备 |
| US11695093B2 (en) | 2018-11-21 | 2023-07-04 | Analog Devices, Inc. | Superlattice photodetector/light emitting diode |
| CN114498285B (zh) * | 2022-01-24 | 2024-02-06 | 中国科学院半导体研究所 | 一种半导体激光器 |
| US12483003B2 (en) | 2022-12-12 | 2025-11-25 | Bandwidth10, LTD. | HCG tunable VCSEL with integrated detector in the sacrificial layer |
| US12272924B2 (en) | 2022-12-12 | 2025-04-08 | Bandwidth10, LTD. | HCG tunable VCSEL system with ASIC for processing information and firmware |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3444019A1 (de) * | 1984-12-03 | 1986-06-05 | Siemens AG, 1000 Berlin und 8000 München | Strahlung erzeugende halbleiterdiode mit einem kleinflaechigen kontakt mit grossflaechigerem oberflaechenschutz |
| US5661075A (en) | 1995-02-06 | 1997-08-26 | Motorola | Method of making a VCSEL with passivation |
| US5831295A (en) * | 1995-12-01 | 1998-11-03 | Motorola, Inc. | Current confinement via defect generator and hetero-interface interaction |
| WO1998007218A1 (en) | 1996-08-09 | 1998-02-19 | W.L. Gore & Associates, Inc. | Vertical cavity surface emitting laser with tunnel junction |
| FR2761822B1 (fr) | 1997-04-03 | 1999-05-07 | Alsthom Cge Alcatel | Laser semiconducteur a emission de surface |
| US5936266A (en) * | 1997-07-22 | 1999-08-10 | The Board Of Trustees Of The University Of Illinois | Semiconductor devices and methods with tunnel contact hole sources |
| DE10107349A1 (de) | 2001-02-15 | 2002-08-29 | Markus-Christian Amann | Oberflächenemittierender Halbleiterlaser |
-
2001
- 2001-02-15 DE DE10107349A patent/DE10107349A1/de not_active Withdrawn
-
2002
- 2002-02-15 EP EP02719854A patent/EP1366548B1/de not_active Expired - Lifetime
- 2002-02-15 JP JP2002564807A patent/JP2004535058A/ja active Pending
- 2002-02-15 KR KR1020037010705A patent/KR100626891B1/ko not_active Expired - Fee Related
- 2002-02-15 IL IL15736202A patent/IL157362A0/xx unknown
- 2002-02-15 US US10/468,183 patent/US7170917B2/en not_active Expired - Lifetime
- 2002-02-15 CA CA002438341A patent/CA2438341A1/en not_active Abandoned
- 2002-02-15 ES ES02719854T patent/ES2240725T3/es not_active Expired - Lifetime
- 2002-02-15 DE DE50202912T patent/DE50202912D1/de not_active Expired - Lifetime
- 2002-02-15 WO PCT/EP2002/001656 patent/WO2002065599A2/de not_active Ceased
- 2002-02-15 CN CNB028050193A patent/CN1263207C/zh not_active Expired - Fee Related
- 2002-02-15 AT AT02719854T patent/ATE294457T1/de not_active IP Right Cessation
- 2002-02-15 DK DK02719854T patent/DK1366548T3/da active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7974328B2 (en) | 2007-03-22 | 2011-07-05 | Nec Corporation | Surface-emission type semiconductor laser |
| JP2012119408A (ja) * | 2010-11-30 | 2012-06-21 | Nippon Telegr & Teleph Corp <Ntt> | 半導体素子、半導体光素子及び半導体集積素子 |
Also Published As
| Publication number | Publication date |
|---|---|
| US7170917B2 (en) | 2007-01-30 |
| IL157362A0 (en) | 2004-02-19 |
| CN1263207C (zh) | 2006-07-05 |
| ES2240725T3 (es) | 2005-10-16 |
| WO2002065599A2 (de) | 2002-08-22 |
| CN1491468A (zh) | 2004-04-21 |
| KR100626891B1 (ko) | 2006-09-20 |
| EP1366548A2 (de) | 2003-12-03 |
| DK1366548T3 (da) | 2005-06-27 |
| DE10107349A1 (de) | 2002-08-29 |
| US20040179568A1 (en) | 2004-09-16 |
| CA2438341A1 (en) | 2002-08-22 |
| ATE294457T1 (de) | 2005-05-15 |
| EP1366548B1 (de) | 2005-04-27 |
| WO2002065599A3 (de) | 2002-10-24 |
| DE50202912D1 (de) | 2005-06-02 |
| KR20030084928A (ko) | 2003-11-01 |
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