CN1263207C - 表面发射半导体激光器 - Google Patents

表面发射半导体激光器 Download PDF

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Publication number
CN1263207C
CN1263207C CNB028050193A CN02805019A CN1263207C CN 1263207 C CN1263207 C CN 1263207C CN B028050193 A CNB028050193 A CN B028050193A CN 02805019 A CN02805019 A CN 02805019A CN 1263207 C CN1263207 C CN 1263207C
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China
Prior art keywords
semiconductor laser
layer
diffusion barrier
contact layer
technology
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Expired - Fee Related
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CNB028050193A
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English (en)
Chinese (zh)
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CN1491468A (zh
Inventor
马库斯－克里斯琴·阿曼
马库斯·奥特西弗
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Vertilas GmbH
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Vertilas GmbH
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Publication of CN1491468A publication Critical patent/CN1491468A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0217—Removal of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H01S5/04253—Electrodes, e.g. characterised by the structure characterised by the material having specific optical properties, e.g. transparent electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18375—Structure of the reflectors, e.g. hybrid mirrors based on metal reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18377—Structure of the reflectors, e.g. hybrid mirrors comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3072—Diffusion blocking layer, i.e. a special layer blocking diffusion of dopants
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3095—Tunnel junction

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
CNB028050193A 2001-02-15 2002-02-15 表面发射半导体激光器 Expired - Fee Related CN1263207C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10107349A DE10107349A1 (de) 2001-02-15 2001-02-15 Oberflächenemittierender Halbleiterlaser
DE10107349.6 2001-02-15

Publications (2)

Publication Number Publication Date
CN1491468A CN1491468A (zh) 2004-04-21
CN1263207C true CN1263207C (zh) 2006-07-05

Family

ID=7674324

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB028050193A Expired - Fee Related CN1263207C (zh) 2001-02-15 2002-02-15 表面发射半导体激光器

Country Status (12)

Country Link
US (1) US7170917B2 (enExample)
EP (1) EP1366548B1 (enExample)
JP (1) JP2004535058A (enExample)
KR (1) KR100626891B1 (enExample)
CN (1) CN1263207C (enExample)
AT (1) ATE294457T1 (enExample)
CA (1) CA2438341A1 (enExample)
DE (2) DE10107349A1 (enExample)
DK (1) DK1366548T3 (enExample)
ES (1) ES2240725T3 (enExample)
IL (1) IL157362A0 (enExample)
WO (1) WO2002065599A2 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10107349A1 (de) 2001-02-15 2002-08-29 Markus-Christian Amann Oberflächenemittierender Halbleiterlaser
DE10147888A1 (de) * 2001-09-28 2003-04-24 Osram Opto Semiconductors Gmbh Optisch gepumpter vertikal emittierender Halbleiterlaser
DE10305079B4 (de) * 2002-11-27 2005-04-28 Vertilas Gmbh Verfahren zur Herstellung eines vergrabenen Tunnelkontakts in einem oberflächenemittierenden Halbleiterlaser sowie oberflächenemittierender Halbleiterlaser
US6936486B2 (en) * 2002-11-19 2005-08-30 Jdsu Uniphase Corporation Low voltage multi-junction vertical cavity surface emitting laser
JP2006508550A (ja) * 2002-11-27 2006-03-09 フェルティラス ゲーエムベーハー 面発光型半導体レーザの埋込トンネル接合の製造方法
US6870868B2 (en) * 2003-02-18 2005-03-22 Eastman Kodak Company Organic laser having improved linearity
DE10353960B4 (de) * 2003-10-16 2006-03-23 Vertilas Gmbh Oberflächenemittierender Halbleiterlaser mit strukturiertem Wellenleiter
US7372886B2 (en) * 2004-06-07 2008-05-13 Avago Technologies Fiber Ip Pte Ltd High thermal conductivity vertical cavity surface emitting laser (VCSEL)
JP2008198957A (ja) * 2007-02-16 2008-08-28 Hitachi Ltd 半導体レーザ装置および光増幅装置
JPWO2008114707A1 (ja) 2007-03-22 2010-07-01 日本電気株式会社 面発光型半導体レーザ
JP2012119408A (ja) * 2010-11-30 2012-06-21 Nippon Telegr & Teleph Corp <Ntt> 半導体素子、半導体光素子及び半導体集積素子
KR20130132064A (ko) * 2012-05-25 2013-12-04 (주)파이버피아 수직 면발광 레이저다이오드
US10033158B1 (en) 2016-12-19 2018-07-24 Osram Opto Semiconductors Gmbh Semiconductor laser, laser assembly and method of making a semiconductor laser
CN106856296B (zh) * 2016-12-27 2019-07-05 中国科学院半导体研究所 一种长波长垂直腔面发射激光器
CN108927601A (zh) * 2018-07-18 2018-12-04 张家港市顶峰激光科技有限公司 一种利用半导体激光束进行材料表面整平设备
US11695093B2 (en) 2018-11-21 2023-07-04 Analog Devices, Inc. Superlattice photodetector/light emitting diode
CN114498285B (zh) * 2022-01-24 2024-02-06 中国科学院半导体研究所 一种半导体激光器
US12272924B2 (en) 2022-12-12 2025-04-08 Bandwidth10, LTD. HCG tunable VCSEL system with ASIC for processing information and firmware
US12483003B2 (en) 2022-12-12 2025-11-25 Bandwidth10, LTD. HCG tunable VCSEL with integrated detector in the sacrificial layer

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3444019A1 (de) 1984-12-03 1986-06-05 Siemens AG, 1000 Berlin und 8000 München Strahlung erzeugende halbleiterdiode mit einem kleinflaechigen kontakt mit grossflaechigerem oberflaechenschutz
US5661075A (en) 1995-02-06 1997-08-26 Motorola Method of making a VCSEL with passivation
US5831295A (en) * 1995-12-01 1998-11-03 Motorola, Inc. Current confinement via defect generator and hetero-interface interaction
AU3600697A (en) 1996-08-09 1998-03-06 W.L. Gore & Associates, Inc. Vertical cavity surface emitting laser with tunnel junction
FR2761822B1 (fr) 1997-04-03 1999-05-07 Alsthom Cge Alcatel Laser semiconducteur a emission de surface
US5936266A (en) * 1997-07-22 1999-08-10 The Board Of Trustees Of The University Of Illinois Semiconductor devices and methods with tunnel contact hole sources
DE10107349A1 (de) 2001-02-15 2002-08-29 Markus-Christian Amann Oberflächenemittierender Halbleiterlaser

Also Published As

Publication number Publication date
WO2002065599A3 (de) 2002-10-24
CN1491468A (zh) 2004-04-21
JP2004535058A (ja) 2004-11-18
IL157362A0 (en) 2004-02-19
CA2438341A1 (en) 2002-08-22
EP1366548B1 (de) 2005-04-27
DE50202912D1 (de) 2005-06-02
ES2240725T3 (es) 2005-10-16
ATE294457T1 (de) 2005-05-15
WO2002065599A2 (de) 2002-08-22
KR100626891B1 (ko) 2006-09-20
KR20030084928A (ko) 2003-11-01
DK1366548T3 (da) 2005-06-27
US7170917B2 (en) 2007-01-30
DE10107349A1 (de) 2002-08-29
EP1366548A2 (de) 2003-12-03
US20040179568A1 (en) 2004-09-16

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