WO2012046306A9 - 光起電力装置およびその製造方法 - Google Patents

光起電力装置およびその製造方法 Download PDF

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Publication number
WO2012046306A9
WO2012046306A9 PCT/JP2010/067482 JP2010067482W WO2012046306A9 WO 2012046306 A9 WO2012046306 A9 WO 2012046306A9 JP 2010067482 W JP2010067482 W JP 2010067482W WO 2012046306 A9 WO2012046306 A9 WO 2012046306A9
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WO
WIPO (PCT)
Prior art keywords
substrate
face
face side
electrode
diffusion layer
Prior art date
Application number
PCT/JP2010/067482
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English (en)
French (fr)
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WO2012046306A1 (ja
Inventor
濱本　哲
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三菱電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 三菱電機株式会社 filed Critical 三菱電機株式会社
Priority to DE112010005921T priority Critical patent/DE112010005921T5/de
Priority to CN201080069176.2A priority patent/CN103180964B/zh
Priority to US13/813,865 priority patent/US20130133741A1/en
Priority to JP2012537513A priority patent/JP5496354B2/ja
Priority to PCT/JP2010/067482 priority patent/WO2012046306A1/ja
Priority to TW099143445A priority patent/TWI415280B/zh
Publication of WO2012046306A1 publication Critical patent/WO2012046306A1/ja
Publication of WO2012046306A9 publication Critical patent/WO2012046306A9/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

　不純物拡散層を有する半導体基板（基板）と、不純物拡散層上に形成された反射防止膜を貫通して不純物拡散層に電気的に接続する第１電極と、基板の他面側に達する複数の開口部を有して形成された裏面絶縁膜と、基板の他面側に形成された第２電極と、気相成長法によって形成される金属膜からなり、または金属箔を含んで構成され、少なくとも裏面絶縁膜上を覆って形成された裏面反射膜と、を備え、第２電極は、基板の他面側において開口部に埋め込まれて基板の他面側に接続するＡｌ系電極と、基板の他面側において開口部間の領域に設けられて少なくとも一部が裏面絶縁膜を貫通して基板の他面側に電気的に接続するＡｇ系電極とからなり、基板の面内におけるＡｇ系電極の面積と、キャリアの拡散長分だけＡｇ系電極のパターンを基板の面内において外側に拡張した周辺領域の面積との和が、基板の他面側の面積の１０％以下である。
PCT/JP2010/067482 2010-10-05 2010-10-05 光起電力装置およびその製造方法 WO2012046306A1 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
DE112010005921T DE112010005921T5 (de) 2010-10-05 2010-10-05 Photovoltaische Vorrichtung und Herstellungsverfahren derselben
CN201080069176.2A CN103180964B (zh) 2010-10-05 2010-10-05 光电动势装置及其制造方法
US13/813,865 US20130133741A1 (en) 2010-10-05 2010-10-05 Photovoltaic device and manufacturing method thereof
JP2012537513A JP5496354B2 (ja) 2010-10-05 2010-10-05 光起電力装置およびその製造方法
PCT/JP2010/067482 WO2012046306A1 (ja) 2010-10-05 2010-10-05 光起電力装置およびその製造方法
TW099143445A TWI415280B (zh) 2010-10-05 2010-12-13 Light power device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2010/067482 WO2012046306A1 (ja) 2010-10-05 2010-10-05 光起電力装置およびその製造方法

Publications (2)

Publication Number Publication Date
WO2012046306A1 WO2012046306A1 (ja) 2012-04-12
WO2012046306A9 true WO2012046306A9 (ja) 2012-12-13

Family

ID=45927324

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2010/067482 WO2012046306A1 (ja) 2010-10-05 2010-10-05 光起電力装置およびその製造方法

Country Status (6)

Country Link
US (1) US20130133741A1 (ja)
JP (1) JP5496354B2 (ja)
CN (1) CN103180964B (ja)
DE (1) DE112010005921T5 (ja)
TW (1) TWI415280B (ja)
WO (1) WO2012046306A1 (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5868528B2 (ja) * 2013-01-30 2016-02-24 三菱電機株式会社 光起電力装置およびその製造方法、光起電力モジュール
JP6224513B2 (ja) * 2014-04-25 2017-11-01 京セラ株式会社 太陽電池素子の製造方法
NL2015844B1 (en) * 2015-11-23 2017-06-07 Stichting Energieonderzoek Centrum Nederland Enhanced metallization of silicon solar cells.
JPWO2017163506A1 (ja) * 2016-03-25 2018-12-27 パナソニックＩｐマネジメント株式会社 太陽電池セル

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JP3203076B2 (ja) 1992-11-30 2001-08-27 シャープ株式会社 宇宙用シリコン太陽電池
JP2000138386A (ja) * 1998-11-04 2000-05-16 Shin Etsu Chem Co Ltd 太陽電池の製造方法およびこの方法で製造された太陽電池
JP2002246625A (ja) 2001-02-21 2002-08-30 Sharp Corp 太陽電池の製造方法
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Also Published As

Publication number Publication date
TWI415280B (zh) 2013-11-11
CN103180964B (zh) 2015-12-16
JP5496354B2 (ja) 2014-05-21
US20130133741A1 (en) 2013-05-30
DE112010005921T5 (de) 2013-09-26
JPWO2012046306A1 (ja) 2014-02-24
TW201216484A (en) 2012-04-16
WO2012046306A1 (ja) 2012-04-12
CN103180964A (zh) 2013-06-26

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