WO2008129963A1 - 半導体発光素子およびその製造方法 - Google Patents
半導体発光素子およびその製造方法 Download PDFInfo
- Publication number
- WO2008129963A1 WO2008129963A1 PCT/JP2008/057176 JP2008057176W WO2008129963A1 WO 2008129963 A1 WO2008129963 A1 WO 2008129963A1 JP 2008057176 W JP2008057176 W JP 2008057176W WO 2008129963 A1 WO2008129963 A1 WO 2008129963A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- metal
- emitting device
- semiconductor light
- gaas
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 6
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- 239000002184 metal Substances 0.000 abstract 12
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 7
- 239000000758 substrate Substances 0.000 abstract 5
- 238000005253 cladding Methods 0.000 abstract 4
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Priority Applications (11)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/596,004 US8106412B2 (en) | 2007-04-16 | 2008-04-11 | Semiconductor light emitting device and fabrication method for the same |
EP08740273.1A EP2139052B1 (en) | 2007-04-16 | 2008-04-11 | Semiconductor light-emitting device and method for manufacturing the same |
KR1020097023683A KR101446370B1 (ko) | 2007-04-16 | 2008-04-11 | 반도체 발광 소자 및 그 제조 방법 |
US13/327,860 US8536598B2 (en) | 2007-04-16 | 2011-12-16 | Semiconductor light emitting device and fabrication method for the same |
US14/286,696 US9196808B2 (en) | 2007-04-16 | 2014-05-23 | Semiconductor light emitting device |
US14/928,349 US9450145B2 (en) | 2007-04-16 | 2015-10-30 | Semiconductor light emitting device |
US15/248,332 US9786819B2 (en) | 2007-04-16 | 2016-08-26 | Semiconductor light emitting device |
US15/716,452 US10032961B2 (en) | 2007-04-16 | 2017-09-26 | Semiconductor light emitting device |
US16/015,282 US10483435B2 (en) | 2007-04-16 | 2018-06-22 | Semiconductor light emitting device |
US16/657,403 US11616172B2 (en) | 2007-04-16 | 2019-10-18 | Semiconductor light emitting device with frosted semiconductor layer |
US18/169,555 US20230197906A1 (en) | 2007-04-16 | 2023-02-15 | Semiconductor light emitting device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-107130 | 2007-04-16 | ||
JP2007107130A JP5346443B2 (ja) | 2007-04-16 | 2007-04-16 | 半導体発光素子およびその製造方法 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/596,004 A-371-Of-International US8106412B2 (en) | 2007-04-16 | 2008-04-11 | Semiconductor light emitting device and fabrication method for the same |
US13/327,860 Division US8536598B2 (en) | 2007-04-16 | 2011-12-16 | Semiconductor light emitting device and fabrication method for the same |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008129963A1 true WO2008129963A1 (ja) | 2008-10-30 |
Family
ID=39875491
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/057176 WO2008129963A1 (ja) | 2007-04-16 | 2008-04-11 | 半導体発光素子およびその製造方法 |
Country Status (7)
Country | Link |
---|---|
US (10) | US8106412B2 (ja) |
EP (1) | EP2139052B1 (ja) |
JP (1) | JP5346443B2 (ja) |
KR (1) | KR101446370B1 (ja) |
CN (2) | CN104409588B (ja) |
TW (1) | TWI481065B (ja) |
WO (1) | WO2008129963A1 (ja) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5346443B2 (ja) | 2007-04-16 | 2013-11-20 | ローム株式会社 | 半導体発光素子およびその製造方法 |
WO2009129353A1 (en) * | 2008-04-15 | 2009-10-22 | Purdue Research Foundation | Metallized silicon substrate for indium gallium nitride light-emitting diode |
KR101363022B1 (ko) * | 2008-12-23 | 2014-02-14 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
KR100999726B1 (ko) | 2009-05-04 | 2010-12-08 | 엘지이노텍 주식회사 | 발광소자 및 그 제조방법 |
JP2011129724A (ja) * | 2009-12-18 | 2011-06-30 | Dowa Electronics Materials Co Ltd | 半導体発光素子およびその製造方法 |
TW201145577A (en) * | 2010-06-11 | 2011-12-16 | Hon Hai Prec Ind Co Ltd | Light-emitting diode unit and method for making it |
CN102280552B (zh) * | 2010-06-14 | 2015-06-03 | 鸿富锦精密工业(深圳)有限公司 | 发光二极管晶粒及其制作方法 |
US9601657B2 (en) * | 2011-03-17 | 2017-03-21 | Epistar Corporation | Light-emitting device |
US9269870B2 (en) | 2011-03-17 | 2016-02-23 | Epistar Corporation | Light-emitting device with intermediate layer |
US8686398B2 (en) | 2012-03-02 | 2014-04-01 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device |
US9450152B2 (en) | 2012-05-29 | 2016-09-20 | Micron Technology, Inc. | Solid state transducer dies having reflective features over contacts and associated systems and methods |
JP2014022401A (ja) | 2012-07-12 | 2014-02-03 | Toshiba Corp | 窒化物半導体発光素子 |
JP5954185B2 (ja) * | 2012-12-04 | 2016-07-20 | 日亜化学工業株式会社 | 半導体素子の製造方法 |
TWI613838B (zh) * | 2014-03-06 | 2018-02-01 | 晶元光電股份有限公司 | 發光元件 |
CN104502878B (zh) * | 2014-12-26 | 2018-07-31 | 中国电子科技集团公司第十三研究所 | 微波GaAs衬底在片S参数微带线TRL校准件 |
CN105785304B (zh) * | 2016-05-11 | 2018-09-18 | 中国电子科技集团公司第十三研究所 | 用于校准在片高值电阻测量系统的标准件 |
DE102017115252A1 (de) * | 2017-07-07 | 2019-01-10 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Schichtstapels und Schichtstapel |
US10522708B2 (en) | 2017-12-14 | 2019-12-31 | Lumileds Llc | Method of preventing contamination of LED die |
JP7308831B2 (ja) * | 2017-12-14 | 2023-07-14 | ルミレッズ リミテッド ライアビリティ カンパニー | Ledダイの汚染を防止する方法 |
JP2021012936A (ja) * | 2019-07-05 | 2021-02-04 | 株式会社ディスコ | 光デバイスの移設方法 |
TWI763377B (zh) * | 2021-03-16 | 2022-05-01 | 兆勁科技股份有限公司 | 發光元件 |
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KR100975659B1 (ko) * | 2007-12-18 | 2010-08-17 | 포항공과대학교 산학협력단 | 발광 소자 및 그 제조 방법 |
JP2009200178A (ja) * | 2008-02-20 | 2009-09-03 | Hitachi Cable Ltd | 半導体発光素子 |
US8179937B2 (en) * | 2009-01-08 | 2012-05-15 | Quantum Electro Opto Systems Sdn. Bhd. | High speed light emitting semiconductor methods and devices |
JP4375497B1 (ja) * | 2009-03-11 | 2009-12-02 | 住友電気工業株式会社 | Iii族窒化物半導体素子、エピタキシャル基板、及びiii族窒化物半導体素子を作製する方法 |
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JP2014120695A (ja) * | 2012-12-19 | 2014-06-30 | Rohm Co Ltd | 半導体発光素子 |
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2007
- 2007-04-16 JP JP2007107130A patent/JP5346443B2/ja active Active
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2008
- 2008-04-11 EP EP08740273.1A patent/EP2139052B1/en active Active
- 2008-04-11 WO PCT/JP2008/057176 patent/WO2008129963A1/ja active Application Filing
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EP2139052A4 (en) | 2014-01-01 |
US20140264267A1 (en) | 2014-09-18 |
US20230197906A1 (en) | 2023-06-22 |
KR20090130127A (ko) | 2009-12-17 |
JP5346443B2 (ja) | 2013-11-20 |
US10483435B2 (en) | 2019-11-19 |
US10032961B2 (en) | 2018-07-24 |
CN101657912A (zh) | 2010-02-24 |
US9786819B2 (en) | 2017-10-10 |
CN104409588B (zh) | 2017-05-31 |
US20140008610A1 (en) | 2014-01-09 |
US9450145B2 (en) | 2016-09-20 |
US20160056332A1 (en) | 2016-02-25 |
US20200052163A1 (en) | 2020-02-13 |
US20120132889A1 (en) | 2012-05-31 |
EP2139052B1 (en) | 2018-11-21 |
US11616172B2 (en) | 2023-03-28 |
US8536598B2 (en) | 2013-09-17 |
US20180019381A1 (en) | 2018-01-18 |
CN104409588A (zh) | 2015-03-11 |
TW200847492A (en) | 2008-12-01 |
US9196808B2 (en) | 2015-11-24 |
US20100133507A1 (en) | 2010-06-03 |
TWI481065B (zh) | 2015-04-11 |
JP2008270261A (ja) | 2008-11-06 |
US9018650B2 (en) | 2015-04-28 |
KR101446370B1 (ko) | 2014-10-01 |
US20180301599A1 (en) | 2018-10-18 |
US8106412B2 (en) | 2012-01-31 |
US20160365489A1 (en) | 2016-12-15 |
EP2139052A1 (en) | 2009-12-30 |
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