JP5722844B2 - 発光デバイス及びその作製方法 - Google Patents
発光デバイス及びその作製方法 Download PDFInfo
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- JP5722844B2 JP5722844B2 JP2012180804A JP2012180804A JP5722844B2 JP 5722844 B2 JP5722844 B2 JP 5722844B2 JP 2012180804 A JP2012180804 A JP 2012180804A JP 2012180804 A JP2012180804 A JP 2012180804A JP 5722844 B2 JP5722844 B2 JP 5722844B2
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- Prior art keywords
- emitting device
- light emitting
- substrate
- layer
- active region
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- 238000004519 manufacturing process Methods 0.000 title description 17
- 239000000758 substrate Substances 0.000 claims description 58
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 20
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 16
- 229910052737 gold Inorganic materials 0.000 claims description 16
- 239000010931 gold Substances 0.000 claims description 16
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 14
- 239000010936 titanium Substances 0.000 claims description 14
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 13
- 229910052719 titanium Inorganic materials 0.000 claims description 13
- 229910052594 sapphire Inorganic materials 0.000 claims description 11
- 239000010980 sapphire Substances 0.000 claims description 11
- 229910052697 platinum Inorganic materials 0.000 claims description 10
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 6
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 3
- 229910001020 Au alloy Inorganic materials 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 239000003353 gold alloy Substances 0.000 claims description 3
- 239000011135 tin Substances 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 229910000838 Al alloy Inorganic materials 0.000 claims 1
- 229910001069 Ti alloy Inorganic materials 0.000 claims 1
- 229910002601 GaN Inorganic materials 0.000 description 40
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 33
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 9
- 229910010271 silicon carbide Inorganic materials 0.000 description 9
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 238000004377 microelectronic Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 229910005540 GaP Inorganic materials 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Description
本出願は、その開示の全体が記述されているかのように参照として本明細書に組み込まれている、2003年4月30日に出願した米国仮特許出願第60/466617号明細書の特典及び優先権を主張するものである。
本発明は、このような問題に鑑みてなされたもので、その目的とするところは、活性領域を備え、両面に結合された電気的コンタクトを有する発光デバイス及びその作製方法を提供することにある。
以下の特定の実施形態についての詳細な説明を、添付の図面と併せて読むことで、本発明の他の特徴がより理解しやすくなるであろう。
105 サファイア(A1203)基板
115 n型層
120 p型層
130及び135 オーミックコンタクト
205 基板
220 オーミックコンタクト層
225 n型層
230 p型層
235 第1の電気的コンタクト
240 コンタクトプラグ
245 第2の電気的コンタクト
Claims (12)
- 活性領域と、
前記活性領域の第1の面上の第1の電気的コンタクトと、
前記活性領域の第2の面上の第1の基板と、
前記活性領域の第2の面上のコンタクトプラグであって、金、銀、金合金、及び/又は銀合金を有し、前記第1の基板を通って伸びる前記コンタクトプラグと、
前記コンタクトプラグ上の第2の電気的コンタクトであって、アルミニウム、チタン、アルミニウム合金、及び/又はチタン合金を有する前記第2の電気的コンタクトと、
を備え、
前記コンタクトプラグは前記第2の電気コンタクトを前記活性領域に接続し、
前記活性領域と前記第1の電気的コンタクトは第2の基板上に形成され、前記第2の基板から前記第1の基板に移動することを特徴とする発光デバイス。 - 前記コンタクトプラグと前記活性領域の前記第2の面の間にオーミックコンタクト層をさらに備えたことを特徴とする請求項1に記載の発光デバイス。
- 前記オーミックコンタクト層が、TiN、白金、ニッケル/金、酸化ニッケル/金、酸化ニッケル/白金、Ti、及びチタン/金のうちの少なくとも1つを有することを特徴とする請求項2に記載の発光デバイス。
- 前記オーミックコンタクト層の厚さが、約10Å〜約100Åであることを特徴とする請求項2に記載の発光デバイス。
- 前記オーミックコンタクト層が少なくとも部分的に透過性であることを特徴とする請求項1に記載の発光デバイス。
- 前記基板が、サファイアを有することを特徴とする請求項1に記載の発光デバイス。
- 前記第1及び前記第2の電気的コンタクトが、互いに整列されていることを特徴とする請求項1に記載の発光デバイス。
- 前記第1及び前記第2の電気的コンタクトが、前記第1及び前記第2の面に垂直な方向に対して、互いにオフセットされていることを特徴とする請求項1に記載の発光デバイス。
- 前記活性領域が、前記コンタクトプラグに隣接するn型層と、前記第1の電気的コンタクトに隣接するp型層を有することを特徴とする請求項1に記載の発光デバイス。
- 前記n型層が、GaNを有することを特徴とする請求項10に記載の発光デバイス。
- 前記p型層が、GaNを有することを特徴とする請求項10に記載の発光デバイス。
- 前記第1の電気的コンタクトが、白金、ニッケル、及びチタン/金のうちの少なくとも1つを有することを特徴とする請求項1に記載の発光デバイス。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US46661703P | 2003-04-30 | 2003-04-30 | |
US60/466,617 | 2003-04-30 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006509976A Division JP2006525674A (ja) | 2003-04-30 | 2004-04-13 | 発光デバイス及びその作製方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012248885A JP2012248885A (ja) | 2012-12-13 |
JP5722844B2 true JP5722844B2 (ja) | 2015-05-27 |
Family
ID=33434961
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006509976A Pending JP2006525674A (ja) | 2003-04-30 | 2004-04-13 | 発光デバイス及びその作製方法 |
JP2012180804A Expired - Lifetime JP5722844B2 (ja) | 2003-04-30 | 2012-08-17 | 発光デバイス及びその作製方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006509976A Pending JP2006525674A (ja) | 2003-04-30 | 2004-04-13 | 発光デバイス及びその作製方法 |
Country Status (8)
Country | Link |
---|---|
US (3) | US7531380B2 (ja) |
EP (1) | EP1618613B1 (ja) |
JP (2) | JP2006525674A (ja) |
KR (2) | KR101060914B1 (ja) |
CN (1) | CN100454587C (ja) |
CA (1) | CA2497344A1 (ja) |
TW (1) | TWI234296B (ja) |
WO (1) | WO2004100277A1 (ja) |
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US7531380B2 (en) * | 2003-04-30 | 2009-05-12 | Cree, Inc. | Methods of forming light-emitting devices having an active region with electrical contacts coupled to opposing surfaces thereof |
ATE524839T1 (de) * | 2004-06-30 | 2011-09-15 | Cree Inc | Verfahren zum kapseln eines lichtemittierenden bauelements und gekapselte lichtemittierende bauelemente im chip-massstab |
TWI422044B (zh) * | 2005-06-30 | 2014-01-01 | Cree Inc | 封裝發光裝置之晶片尺度方法及經晶片尺度封裝之發光裝置 |
KR100700531B1 (ko) * | 2005-12-14 | 2007-03-28 | 엘지전자 주식회사 | 발광 다이오드 및 그 제조 방법 |
WO2007081964A2 (en) | 2006-01-10 | 2007-07-19 | Cree, Inc. | Silicon carbide dimpled substrate |
KR101125339B1 (ko) | 2006-02-14 | 2012-03-27 | 엘지이노텍 주식회사 | 질화물계 반도체 발광소자 및 그 제조 방법 |
US9178121B2 (en) | 2006-12-15 | 2015-11-03 | Cree, Inc. | Reflective mounting substrates for light emitting diodes |
US20100012954A1 (en) * | 2008-07-21 | 2010-01-21 | Chen-Hua Yu | Vertical III-Nitride Light Emitting Diodes on Patterned Substrates with Embedded Bottom Electrodes |
CN102341926A (zh) * | 2009-03-05 | 2012-02-01 | 株式会社小糸制作所 | 发光模块、发光模块的制造方法及灯具单元 |
DE102009053285B4 (de) * | 2009-11-13 | 2012-10-04 | Karlsruher Institut für Technologie | Verfahren zum reversiblen, parallelen Schließen einer Vielzahl von fluidischen Zuleitungen mit einem mikrofluidischen System |
JP2011119512A (ja) * | 2009-12-04 | 2011-06-16 | Denso Corp | 半導体装置およびその製造方法 |
KR101020995B1 (ko) * | 2010-02-18 | 2011-03-09 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지 |
DE102010014177A1 (de) * | 2010-04-01 | 2011-10-06 | Jenoptik Polymer Systems Gmbh | Oberflächenemittierende Halbleiter-Leuchtdiode |
KR101028327B1 (ko) * | 2010-04-15 | 2011-04-12 | 엘지이노텍 주식회사 | 발광소자, 발광소자 제조방법 및 발광소자 패키지 |
CN102054913B (zh) * | 2010-11-09 | 2013-07-10 | 映瑞光电科技(上海)有限公司 | 发光二极管及其制造方法、发光装置 |
CN102054914B (zh) | 2010-11-09 | 2013-09-04 | 映瑞光电科技(上海)有限公司 | 发光二极管及其制造方法、发光装置 |
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2004
- 2004-04-06 US US10/818,619 patent/US7531380B2/en active Active
- 2004-04-13 EP EP04750072.3A patent/EP1618613B1/en not_active Expired - Lifetime
- 2004-04-13 WO PCT/US2004/011358 patent/WO2004100277A1/en active Application Filing
- 2004-04-13 CN CNB2004800116322A patent/CN100454587C/zh not_active Expired - Lifetime
- 2004-04-13 CA CA002497344A patent/CA2497344A1/en not_active Abandoned
- 2004-04-13 JP JP2006509976A patent/JP2006525674A/ja active Pending
- 2004-04-13 KR KR1020057003804A patent/KR101060914B1/ko active IP Right Grant
- 2004-04-13 KR KR1020107029479A patent/KR101230762B1/ko active IP Right Grant
- 2004-04-27 TW TW093111759A patent/TWI234296B/zh not_active IP Right Cessation
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2008
- 2008-09-30 US US12/241,665 patent/US20090026487A1/en not_active Abandoned
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2009
- 2009-05-11 US US12/463,736 patent/US8378461B2/en not_active Expired - Lifetime
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Also Published As
Publication number | Publication date |
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EP1618613A1 (en) | 2006-01-25 |
JP2006525674A (ja) | 2006-11-09 |
US20090026487A1 (en) | 2009-01-29 |
JP2012248885A (ja) | 2012-12-13 |
WO2004100277A1 (en) | 2004-11-18 |
US20040217361A1 (en) | 2004-11-04 |
CN100454587C (zh) | 2009-01-21 |
TWI234296B (en) | 2005-06-11 |
CA2497344A1 (en) | 2004-11-18 |
CN1788357A (zh) | 2006-06-14 |
EP1618613B1 (en) | 2019-06-12 |
KR20060011816A (ko) | 2006-02-03 |
KR101230762B1 (ko) | 2013-02-06 |
US8378461B2 (en) | 2013-02-19 |
US7531380B2 (en) | 2009-05-12 |
KR101060914B1 (ko) | 2011-08-30 |
US20090224281A1 (en) | 2009-09-10 |
TW200505055A (en) | 2005-02-01 |
KR20110014681A (ko) | 2011-02-11 |
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