WO2008152988A1 - 半導体発光素子およびその製造方法 - Google Patents

半導体発光素子およびその製造方法 Download PDF

Info

Publication number
WO2008152988A1
WO2008152988A1 PCT/JP2008/060476 JP2008060476W WO2008152988A1 WO 2008152988 A1 WO2008152988 A1 WO 2008152988A1 JP 2008060476 W JP2008060476 W JP 2008060476W WO 2008152988 A1 WO2008152988 A1 WO 2008152988A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
light emitting
metal
emitting element
semiconductor light
Prior art date
Application number
PCT/JP2008/060476
Other languages
English (en)
French (fr)
Inventor
Masakazu Takao
Mitsuhiko Sakai
Shunji Nakata
Original Assignee
Rohm Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co., Ltd. filed Critical Rohm Co., Ltd.
Priority to CN2008800199380A priority Critical patent/CN101681970B/zh
Priority to US12/452,027 priority patent/US8039864B2/en
Priority to EP08765289.7A priority patent/EP2157623B1/en
Publication of WO2008152988A1 publication Critical patent/WO2008152988A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

　不透明な半導体基板を用いて、金属反射層を形成して高輝度の半導体発光素子およびその製造方法を提供する。 　ＧａＡｓ層（３）と、ＧａＡｓ層の表面に配置された第１金属バッファ層（２）と、第１金属バッファ層上に配置された第１金属層（１）と、ＧａＡｓ層の裏面に配置された第２金属バッファ層（４）と第２金属層（５）とを備えるＧａＡｓ基板構造と、ＧａＡｓ基板構造上に配置され、第３金属層（１２）と、第３金属層上に配置される金属コンタクト層（１１）と、金属コンタクト層上に配置されるｐ型クラッド層（１０）と、ｐ型クラッド層に配置される多重量子井戸層（９）と、多重量子井戸層上に配置されるｎ型クラッド層（８）と、ｎ型クラッド層上に配置されるウィンドウ層（７）を備える発光ダイオード構造とから構成され、第１金属層（１）および第３金属層（１２）を用いて、ＧａＡｓ基板構造と、発光ダイオード構造を貼り付ける。
PCT/JP2008/060476 2007-06-13 2008-06-06 半導体発光素子およびその製造方法 WO2008152988A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2008800199380A CN101681970B (zh) 2007-06-13 2008-06-06 半导体发光元件及其制造方法
US12/452,027 US8039864B2 (en) 2007-06-13 2008-06-06 Semiconductor light emitting device and fabrication method for the same
EP08765289.7A EP2157623B1 (en) 2007-06-13 2008-06-06 Semiconductor light emitting element and method for manufacturing the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007156381A JP5123573B2 (ja) 2007-06-13 2007-06-13 半導体発光素子およびその製造方法
JP2007-156381 2007-06-13

Publications (1)

Publication Number Publication Date
WO2008152988A1 true WO2008152988A1 (ja) 2008-12-18

Family

ID=40129593

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/060476 WO2008152988A1 (ja) 2007-06-13 2008-06-06 半導体発光素子およびその製造方法

Country Status (6)

Country Link
US (1) US8039864B2 (ja)
EP (1) EP2157623B1 (ja)
JP (1) JP5123573B2 (ja)
KR (1) KR101473038B1 (ja)
CN (1) CN101681970B (ja)
WO (1) WO2008152988A1 (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110089452A1 (en) * 2009-10-15 2011-04-21 Hwan Hee Jeong Semiconductor light-emitting device and method for fabricating the same
US8421105B2 (en) 2009-10-15 2013-04-16 Lg Innotek Co., Ltd. Semiconductor light-emitting device and method for fabricating the same
CN101840966B (zh) * 2009-05-08 2013-07-03 晶能光电（江西）有限公司 半导体发光器件以及制备发光二极管的方法
JP2014086574A (ja) * 2012-10-24 2014-05-12 Stanley Electric Co Ltd 発光素子
US8772803B2 (en) 2009-10-15 2014-07-08 Lg Innotek Co., Ltd. Semiconductor light-emitting device and method for fabricating the same

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100599012B1 (ko) * 2005-06-29 2006-07-12 서울옵토디바이스주식회사 열전도성 기판을 갖는 발광 다이오드 및 그것을 제조하는방법
JP5346443B2 (ja) 2007-04-16 2013-11-20 ローム株式会社 半導体発光素子およびその製造方法
US8299455B2 (en) * 2007-10-15 2012-10-30 International Business Machines Corporation Semiconductor structures having improved contact resistance
JP5651288B2 (ja) * 2008-03-25 2015-01-07 株式会社東芝 半導体発光素子及びその製造方法
JP2010067890A (ja) * 2008-09-12 2010-03-25 Hitachi Cable Ltd 発光素子
JP2010251531A (ja) * 2009-04-16 2010-11-04 Rohm Co Ltd 半導体発光素子
KR101728545B1 (ko) * 2010-04-23 2017-04-19 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
CN102376830B (zh) * 2010-08-19 2015-07-08 展晶科技(深圳)有限公司 发光二极管及其制造方法
KR101138951B1 (ko) * 2010-08-23 2012-04-25 서울옵토디바이스주식회사 발광다이오드
US8154034B1 (en) * 2010-11-23 2012-04-10 Invenlux Limited Method for fabricating vertical light emitting devices and substrate assembly for the same
TWI419367B (zh) * 2010-12-02 2013-12-11 Epistar Corp 光電元件及其製造方法
TWI546979B (zh) * 2012-03-05 2016-08-21 晶元光電股份有限公司 對位接合之發光二極體裝置與其製造方法
KR20140018534A (ko) * 2012-08-02 2014-02-13 엘지이노텍 주식회사 발광 소자
TWI563686B (en) * 2012-12-21 2016-12-21 Hon Hai Prec Ind Co Ltd Led chip and method manufacturing the same
TWI644451B (zh) * 2013-07-10 2018-12-11 晶元光電股份有限公司 發光元件
CN103594579B (zh) * 2013-11-06 2016-04-13 南昌黄绿照明有限公司 一种氮化物发光二极管的外延结构
DE102014108301A1 (de) * 2014-06-12 2015-12-17 Osram Opto Semiconductors Gmbh Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips
KR20160037060A (ko) * 2014-09-26 2016-04-05 서울바이오시스 주식회사 발광소자 및 그 제조 방법
US9773906B2 (en) * 2015-04-28 2017-09-26 Samsung Electronics Co., Ltd. Relaxed semiconductor layers with reduced defects and methods of forming the same
KR102336432B1 (ko) * 2015-09-01 2021-12-07 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자 및 발광소자 패키지
KR102573271B1 (ko) * 2018-04-27 2023-08-31 삼성전자주식회사 반도체 발광소자
US20230106189A1 (en) * 2021-10-01 2023-04-06 Lawrence Livermore National Security, Llc Patterning of diode/substrate interface to reduce thermal lensing
CN116364825A (zh) * 2023-06-01 2023-06-30 江西兆驰半导体有限公司 复合缓冲层及其制备方法、外延片及发光二极管

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004146593A (ja) * 2002-10-24 2004-05-20 Rohm Co Ltd 半導体発光素子
JP2005044887A (ja) * 2003-07-24 2005-02-17 Shin Etsu Handotai Co Ltd 半導体貼り合わせ結合体及びその製造方法、並びに発光素子及びその製造方法
JP2005353809A (ja) * 2004-06-10 2005-12-22 Shin Etsu Handotai Co Ltd 発光素子の製造方法及び発光素子

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5376580A (en) * 1993-03-19 1994-12-27 Hewlett-Packard Company Wafer bonding of light emitting diode layers
US5565694A (en) * 1995-07-10 1996-10-15 Huang; Kuo-Hsin Light emitting diode with current blocking layer
US5759753A (en) * 1995-07-19 1998-06-02 Matsushita Electric Industrial Co., Ltd. Piezoelectric device and method of manufacturing the same
JP2907170B2 (ja) * 1996-12-28 1999-06-21 サンケン電気株式会社 半導体発光素子
JPH11103090A (ja) * 1997-09-29 1999-04-13 Hitachi Cable Ltd 発光ダイオード
US6406636B1 (en) * 1999-06-02 2002-06-18 Megasense, Inc. Methods for wafer to wafer bonding using microstructures
US20020017652A1 (en) * 2000-08-08 2002-02-14 Stefan Illek Semiconductor chip for optoelectronics
FR2857502B1 (fr) * 2003-07-10 2006-02-24 Soitec Silicon On Insulator Substrats pour systemes contraints
TWI223460B (en) * 2003-09-23 2004-11-01 United Epitaxy Co Ltd Light emitting diodes in series connection and method of making the same
JP2005223207A (ja) 2004-02-06 2005-08-18 Sharp Corp 半導体発光素子およびその製造方法
TWI244220B (en) * 2004-02-20 2005-11-21 Epistar Corp Organic binding light-emitting device with vertical structure
WO2006112039A1 (ja) * 2005-04-01 2006-10-26 Matsushita Electric Industrial Co., Ltd. 表面実装型光半導体装置およびその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004146593A (ja) * 2002-10-24 2004-05-20 Rohm Co Ltd 半導体発光素子
JP2005044887A (ja) * 2003-07-24 2005-02-17 Shin Etsu Handotai Co Ltd 半導体貼り合わせ結合体及びその製造方法、並びに発光素子及びその製造方法
JP2005353809A (ja) * 2004-06-10 2005-12-22 Shin Etsu Handotai Co Ltd 発光素子の製造方法及び発光素子

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2157623A4 *

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101840966B (zh) * 2009-05-08 2013-07-03 晶能光电（江西）有限公司 半导体发光器件以及制备发光二极管的方法
US20110089452A1 (en) * 2009-10-15 2011-04-21 Hwan Hee Jeong Semiconductor light-emitting device and method for fabricating the same
US8421105B2 (en) 2009-10-15 2013-04-16 Lg Innotek Co., Ltd. Semiconductor light-emitting device and method for fabricating the same
US8513679B2 (en) * 2009-10-15 2013-08-20 Lg Innotek Co., Ltd. Semiconductor light-emitting device and method for fabricating the same
US8772803B2 (en) 2009-10-15 2014-07-08 Lg Innotek Co., Ltd. Semiconductor light-emitting device and method for fabricating the same
US9117971B2 (en) 2009-10-15 2015-08-25 Lg Innotek Co., Ltd. Semiconductor light-emitting device and method for fabricating the same
US9935245B2 (en) 2009-10-15 2018-04-03 Lg Innotek Co., Ltd. Semiconductor light-emitting device and method for fabricating the same
US10636944B2 (en) 2009-10-15 2020-04-28 Lg Innotek Co., Ltd. Semiconductor light-emitting device and method for fabricating the same
JP2014086574A (ja) * 2012-10-24 2014-05-12 Stanley Electric Co Ltd 発光素子

Also Published As

Publication number Publication date
US20100133505A1 (en) 2010-06-03
KR101473038B1 (ko) 2014-12-15
KR20100020515A (ko) 2010-02-22
EP2157623A1 (en) 2010-02-24
JP5123573B2 (ja) 2013-01-23
JP2008311352A (ja) 2008-12-25
EP2157623A4 (en) 2013-12-25
CN101681970B (zh) 2011-08-24
CN101681970A (zh) 2010-03-24
EP2157623B1 (en) 2017-01-18
US8039864B2 (en) 2011-10-18

Similar Documents

Publication Publication Date Title
WO2008152988A1 (ja) 半導体発光素子およびその製造方法
WO2008129963A1 (ja) 半導体発光素子およびその製造方法
WO2006138465A3 (en) Light emitting diodes with reflective electrode and side electrode
TWI266439B (en) Semiconductor light emitting device and its manufacturing method
EP1536487A4 (en) LIGHT EMISSION ELEMENT, LIGHT EMITTING DEVICE AND THIS USE SURFACE EMISSION LIGHTING DEVICE
TW200723567A (en) Fabrication method of high-brightness light emitting diode having reflective layer
WO2009005894A3 (en) Non-polar ultraviolet light emitting device and method for fabricating same
TW200701521A (en) Semiconductor light emitting element and manufacturing method
TW200703706A (en) Light emitting diode and manufacturing method thereof
TW200739957A (en) Manufacturing method of nitride semiconductor light-emitting element
US7812361B2 (en) Light emitting diode
WO2008054994A3 (en) Deep ultraviolet light emitting device and method for fabricating same
TW200735419A (en) Nitride semiconductor light-emitting element
WO2004075309A3 (en) Reflective ohmic contact for silicon carbide, light emitting diode in including the same, and manufacturing method
WO2008153130A1 (ja) 窒化物半導体発光素子及び窒化物半導体の製造方法
TW200703723A (en) High-brightness light emitting diode having reflective layer
US20070290216A1 (en) Semiconductor light emitting element, manufacturing method therefor, and compound semiconductor light emitting diode
WO2010146390A3 (en) Light emitting diodes
TW200608607A (en) Semiconductor light-emitting device and manufacturing method thereof
TW200644281A (en) Light-emitting device
TW200505062A (en) Light-emitting diode
JP2005268601A (ja) 化合物半導体発光素子
EP1235317A3 (en) Semiconductor laser module and semiconductor laser device having light feedback function
WO2009007919A3 (en) Organic light emitting diodes having improved optical out-coupling
WO2008084834A1 (ja) ＧａＮ系半導体発光素子

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880019938.0

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08765289

Country of ref document: EP

Kind code of ref document: A1

REEP Request for entry into the european phase

Ref document number: 2008765289

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 2008765289

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 12452027

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 20107000402

Country of ref document: KR

Kind code of ref document: A