JP2007184585A5 - - Google Patents
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- Publication number
- JP2007184585A5 JP2007184585A5 JP2006344237A JP2006344237A JP2007184585A5 JP 2007184585 A5 JP2007184585 A5 JP 2007184585A5 JP 2006344237 A JP2006344237 A JP 2006344237A JP 2006344237 A JP2006344237 A JP 2006344237A JP 2007184585 A5 JP2007184585 A5 JP 2007184585A5
- Authority
- JP
- Japan
- Prior art keywords
- barrier layer
- type
- layer
- emitting device
- semiconductor light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000004888 barrier function Effects 0.000 claims 31
- 239000004065 semiconductor Substances 0.000 claims 10
- 239000002019 doping agent Substances 0.000 claims 4
- 238000004519 manufacturing process Methods 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 229910052717 sulfur Inorganic materials 0.000 claims 1
- 229910052718 tin Inorganic materials 0.000 claims 1
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW094147367A TWI282636B (en) | 2005-12-29 | 2005-12-29 | Semiconductor light-emitting device and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007184585A JP2007184585A (ja) | 2007-07-19 |
| JP2007184585A5 true JP2007184585A5 (enExample) | 2010-02-12 |
Family
ID=38223452
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006344237A Pending JP2007184585A (ja) | 2005-12-29 | 2006-12-21 | 半導体発光素子及びその製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7615773B2 (enExample) |
| JP (1) | JP2007184585A (enExample) |
| KR (1) | KR101054785B1 (enExample) |
| TW (1) | TWI282636B (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI360891B (en) * | 2007-04-09 | 2012-03-21 | Epistar Corp | Light emitting device |
| KR101316492B1 (ko) * | 2007-04-23 | 2013-10-10 | 엘지이노텍 주식회사 | 질화물 반도체 발광소자 및 그 제조 방법 |
| KR100905877B1 (ko) * | 2007-11-19 | 2009-07-03 | 삼성전기주식회사 | 질화물 반도체 소자 |
| TWI371887B (en) | 2008-07-11 | 2012-09-01 | Iner Aec Executive Yuan | Method for supplying fuel to fuel cell |
| US7953134B2 (en) | 2008-12-31 | 2011-05-31 | Epistar Corporation | Semiconductor light-emitting device |
| CN103426985B (zh) * | 2012-05-25 | 2016-10-12 | 徐亦敏 | 发光二极管 |
| KR101955313B1 (ko) * | 2012-11-12 | 2019-03-08 | 엘지이노텍 주식회사 | 발광소자 |
| JP6679767B1 (ja) * | 2019-01-07 | 2020-04-15 | Ｄｏｗａエレクトロニクス株式会社 | 半導体発光素子及び半導体発光素子の製造方法 |
| JP7260807B2 (ja) * | 2020-12-24 | 2023-04-19 | 日亜化学工業株式会社 | 窒化物半導体発光素子およびその製造方法 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07122812A (ja) * | 1993-10-27 | 1995-05-12 | Fujitsu Ltd | 半導体レーザ |
| JPH07263808A (ja) * | 1994-03-18 | 1995-10-13 | Fujitsu Ltd | 半導体レーザ |
| WO1998019375A1 (en) * | 1996-10-30 | 1998-05-07 | Hitachi, Ltd. | Optical information processor and semiconductor light emitting device suitable for the same |
| JP2000042685A (ja) * | 1998-05-19 | 2000-02-15 | Reizu Eng:Kk | 貫通孔を有するディスク部の形成方法、貫通孔を有するディスク部を備えた自動車用ホイ―ルの製造方法、熱間鍛造装置 |
| JP3705047B2 (ja) | 1998-12-15 | 2005-10-12 | 日亜化学工業株式会社 | 窒化物半導体発光素子 |
| JP3438648B2 (ja) * | 1999-05-17 | 2003-08-18 | 松下電器産業株式会社 | 窒化物半導体素子 |
| TW425726B (en) | 1999-10-08 | 2001-03-11 | Epistar Corp | A high-luminance light emitting diode with distributed contact layer |
| JP3711020B2 (ja) * | 1999-12-27 | 2005-10-26 | 三洋電機株式会社 | 発光素子 |
| CN1158714C (zh) | 2000-06-20 | 2004-07-21 | 晶元光电股份有限公司 | 具有分布式接触层的高亮度发光二极管 |
| US7009210B2 (en) | 2000-10-06 | 2006-03-07 | Alphion Corporation | Method and apparatus for bit-rate and format insensitive performance monitoring of lightwave signals |
| JP2002270969A (ja) * | 2001-03-07 | 2002-09-20 | Sharp Corp | 窒化物半導体発光素子およびそれを用いた光学装置 |
| JP4390433B2 (ja) * | 2002-06-19 | 2009-12-24 | シャープ株式会社 | 窒化物半導体レーザ及びその製造方法 |
| JP4285949B2 (ja) * | 2002-06-27 | 2009-06-24 | シャープ株式会社 | 窒化物半導体発光素子 |
| TW544958B (en) | 2002-07-15 | 2003-08-01 | Epistar Corp | Light emitting diode with an adhesive layer and its manufacturing method |
| JP2004087908A (ja) * | 2002-08-28 | 2004-03-18 | Sharp Corp | 窒化物半導体発光素子、その製造方法、それを搭載した光学装置 |
| TWI234915B (en) | 2002-11-18 | 2005-06-21 | Pioneer Corp | Semiconductor light-emitting element and method of manufacturing the same |
| CN100573932C (zh) | 2003-05-16 | 2009-12-23 | 晶元光电股份有限公司 | 具有粘结层的发光二极管及其制造方法 |
| JP2005302784A (ja) * | 2004-04-06 | 2005-10-27 | Matsushita Electric Ind Co Ltd | 半導体発光素子及びその製造方法 |
-
2005
- 2005-12-29 TW TW094147367A patent/TWI282636B/zh active
-
2006
- 2006-12-21 JP JP2006344237A patent/JP2007184585A/ja active Pending
- 2006-12-28 KR KR1020060136690A patent/KR101054785B1/ko active Active
- 2006-12-29 US US11/647,170 patent/US7615773B2/en active Active
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