JP2011233783A5 - - Google Patents

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Publication number
JP2011233783A5
JP2011233783A5 JP2010104442A JP2010104442A JP2011233783A5 JP 2011233783 A5 JP2011233783 A5 JP 2011233783A5 JP 2010104442 A JP2010104442 A JP 2010104442A JP 2010104442 A JP2010104442 A JP 2010104442A JP 2011233783 A5 JP2011233783 A5 JP 2011233783A5
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JP
Japan
Prior art keywords
protective film
semiconductor light
light emitting
emitting element
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010104442A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011233783A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2010104442A priority Critical patent/JP2011233783A/ja
Priority claimed from JP2010104442A external-priority patent/JP2011233783A/ja
Priority to US13/582,225 priority patent/US20130049063A1/en
Priority to PCT/JP2011/052813 priority patent/WO2011135888A1/ja
Priority to EP11774673A priority patent/EP2565945A1/en
Priority to KR1020127022724A priority patent/KR20120120389A/ko
Priority to TW100105983A priority patent/TW201228036A/zh
Publication of JP2011233783A publication Critical patent/JP2011233783A/ja
Publication of JP2011233783A5 publication Critical patent/JP2011233783A5/ja
Pending legal-status Critical Current

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JP2010104442A 2010-04-28 2010-04-28 半導体発光素子、半導体発光素子の保護膜及びその作製方法 Pending JP2011233783A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2010104442A JP2011233783A (ja) 2010-04-28 2010-04-28 半導体発光素子、半導体発光素子の保護膜及びその作製方法
US13/582,225 US20130049063A1 (en) 2010-04-28 2011-02-10 Semiconductor light-emitting element, protective film for semiconductor light-emitting element, and process for production of the protective film
PCT/JP2011/052813 WO2011135888A1 (ja) 2010-04-28 2011-02-10 半導体発光素子、半導体発光素子の保護膜及びその作製方法
EP11774673A EP2565945A1 (en) 2010-04-28 2011-02-10 Semiconductor light-emitting element, protective film for semiconductor light-emitting element, and process for production of the protective film
KR1020127022724A KR20120120389A (ko) 2010-04-28 2011-02-10 반도체 발광 소자, 반도체 발광 소자의 보호막 및 그 제작 방법
TW100105983A TW201228036A (en) 2010-04-28 2011-02-23 Semiconductor light-emitting device, protection film thereof, and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010104442A JP2011233783A (ja) 2010-04-28 2010-04-28 半導体発光素子、半導体発光素子の保護膜及びその作製方法

Publications (2)

Publication Number Publication Date
JP2011233783A JP2011233783A (ja) 2011-11-17
JP2011233783A5 true JP2011233783A5 (enExample) 2013-06-06

Family

ID=44861209

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010104442A Pending JP2011233783A (ja) 2010-04-28 2010-04-28 半導体発光素子、半導体発光素子の保護膜及びその作製方法

Country Status (6)

Country Link
US (1) US20130049063A1 (enExample)
EP (1) EP2565945A1 (enExample)
JP (1) JP2011233783A (enExample)
KR (1) KR20120120389A (enExample)
TW (1) TW201228036A (enExample)
WO (1) WO2011135888A1 (enExample)

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JP5857786B2 (ja) * 2012-02-21 2016-02-10 日亜化学工業株式会社 半導体発光素子の製造方法
DE102016105056A1 (de) 2016-03-18 2017-09-21 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
JP6669144B2 (ja) 2016-12-16 2020-03-18 日亜化学工業株式会社 発光素子の製造方法
US10505072B2 (en) 2016-12-16 2019-12-10 Nichia Corporation Method for manufacturing light emitting element
DE102018101815A1 (de) 2018-01-26 2019-08-01 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
JP6570702B1 (ja) 2018-05-29 2019-09-04 日機装株式会社 半導体発光素子および半導体発光素子の製造方法
CN109037407B (zh) * 2018-08-03 2024-04-23 厦门乾照光电股份有限公司 半导体发光芯片及其制造方法
JP7023899B2 (ja) * 2019-07-29 2022-02-22 日機装株式会社 半導体発光素子
CN113284999B (zh) * 2021-03-29 2022-06-14 华灿光电(苏州）有限公司 发光二极管芯片及其制备方法
CN114122084B (zh) * 2021-11-09 2024-04-30 深圳市华星光电半导体显示技术有限公司 顶发射oled显示面板

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JPH07240535A (ja) * 1994-02-28 1995-09-12 Kyocera Corp 薄膜パターンの形成方法
DE69516933T2 (de) * 1994-04-06 2000-12-07 At&T Ipm Corp., Coral Gables Herstellungsverfahren für eine Vorrichtung mit einer SiOx Schicht
JP3292044B2 (ja) * 1996-05-31 2002-06-17 豊田合成株式会社 ｐ伝導形３族窒化物半導体の電極パッド及びそれを有した素子及び素子の製造方法
US6936859B1 (en) * 1998-05-13 2005-08-30 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using group III nitride compound
DE60043536D1 (de) * 1999-03-04 2010-01-28 Nichia Corp Nitridhalbleiterlaserelement
JP3723434B2 (ja) * 1999-09-24 2005-12-07 三洋電機株式会社 半導体発光素子
US20020017652A1 (en) * 2000-08-08 2002-02-14 Stefan Illek Semiconductor chip for optoelectronics
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JP4172515B2 (ja) * 2006-10-18 2008-10-29 ソニー株式会社 発光素子の製造方法
TWI344709B (en) * 2007-06-14 2011-07-01 Epistar Corp Light emitting device
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JP2011233784A (ja) * 2010-04-28 2011-11-17 Mitsubishi Heavy Ind Ltd 半導体発光素子、半導体発光素子の保護膜及びその作製方法
TW201145614A (en) * 2010-06-03 2011-12-16 Toshiba Kk Method for manufacturing light-emitting device and light-emitting device manufactured by the same

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