JP2011233784A5 - - Google Patents

Download PDF

Info

Publication number
JP2011233784A5
JP2011233784A5 JP2010104443A JP2010104443A JP2011233784A5 JP 2011233784 A5 JP2011233784 A5 JP 2011233784A5 JP 2010104443 A JP2010104443 A JP 2010104443A JP 2010104443 A JP2010104443 A JP 2010104443A JP 2011233784 A5 JP2011233784 A5 JP 2011233784A5
Authority
JP
Japan
Prior art keywords
protective film
semiconductor light
film
emitting device
emitting element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010104443A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011233784A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2010104443A priority Critical patent/JP2011233784A/ja
Priority claimed from JP2010104443A external-priority patent/JP2011233784A/ja
Priority to US13/582,192 priority patent/US20130037850A1/en
Priority to KR1020127022725A priority patent/KR20120125326A/ko
Priority to EP11774674.3A priority patent/EP2565946A4/en
Priority to PCT/JP2011/052814 priority patent/WO2011135889A1/ja
Priority to TW100105984A priority patent/TW201203613A/zh
Publication of JP2011233784A publication Critical patent/JP2011233784A/ja
Publication of JP2011233784A5 publication Critical patent/JP2011233784A5/ja
Pending legal-status Critical Current

Links

JP2010104443A 2010-04-28 2010-04-28 半導体発光素子、半導体発光素子の保護膜及びその作製方法 Pending JP2011233784A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2010104443A JP2011233784A (ja) 2010-04-28 2010-04-28 半導体発光素子、半導体発光素子の保護膜及びその作製方法
US13/582,192 US20130037850A1 (en) 2010-04-28 2011-02-10 Semiconductor light-emitting element, protective film of semiconductor light-emitting element, and method for fabricating same
KR1020127022725A KR20120125326A (ko) 2010-04-28 2011-02-10 반도체 발광 소자, 반도체 발광 소자의 보호막 및 그 제작 방법
EP11774674.3A EP2565946A4 (en) 2010-04-28 2011-02-10 LIGHT-EMITTING SEMICONDUCTOR COMPONENT, PROTECTIVE FILM FOR THE LIGHT-EMITTING SEMICONDUCTOR COMPONENT AND METHOD OF MANUFACTURING THEREOF
PCT/JP2011/052814 WO2011135889A1 (ja) 2010-04-28 2011-02-10 半導体発光素子、半導体発光素子の保護膜及びその作製方法
TW100105984A TW201203613A (en) 2010-04-28 2011-02-23 Semiconductor light-emitting element, protective film of semiconductor light-emitting element, and method for fabricating same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010104443A JP2011233784A (ja) 2010-04-28 2010-04-28 半導体発光素子、半導体発光素子の保護膜及びその作製方法

Publications (2)

Publication Number Publication Date
JP2011233784A JP2011233784A (ja) 2011-11-17
JP2011233784A5 true JP2011233784A5 (enExample) 2013-06-06

Family

ID=44861210

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010104443A Pending JP2011233784A (ja) 2010-04-28 2010-04-28 半導体発光素子、半導体発光素子の保護膜及びその作製方法

Country Status (6)

Country Link
US (1) US20130037850A1 (enExample)
EP (1) EP2565946A4 (enExample)
JP (1) JP2011233784A (enExample)
KR (1) KR20120125326A (enExample)
TW (1) TW201203613A (enExample)
WO (1) WO2011135889A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011233783A (ja) * 2010-04-28 2011-11-17 Mitsubishi Heavy Ind Ltd 半導体発光素子、半導体発光素子の保護膜及びその作製方法
JP2013251423A (ja) * 2012-06-01 2013-12-12 Mitsubishi Heavy Ind Ltd 発光素子の保護膜の作製方法及び装置
JP6476854B2 (ja) * 2014-12-26 2019-03-06 日亜化学工業株式会社 発光素子の製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07240535A (ja) * 1994-02-28 1995-09-12 Kyocera Corp 薄膜パターンの形成方法
DE69516933T2 (de) * 1994-04-06 2000-12-07 At&T Ipm Corp., Coral Gables Herstellungsverfahren für eine Vorrichtung mit einer SiOx Schicht
JP3723434B2 (ja) * 1999-09-24 2005-12-07 三洋電機株式会社 半導体発光素子
JP2003332616A (ja) * 2002-05-14 2003-11-21 Sharp Corp 化合物半導体素子およびその製造方法
JP2005286135A (ja) * 2004-03-30 2005-10-13 Eudyna Devices Inc 半導体装置および半導体装置の製造方法
JP4543732B2 (ja) * 2004-04-20 2010-09-15 日立電線株式会社 発光ダイオードアレイ
JP2006041403A (ja) 2004-07-29 2006-02-09 Nichia Chem Ind Ltd 半導体発光素子
JP2007189097A (ja) 2006-01-13 2007-07-26 Nichia Chem Ind Ltd 半導体発光素子
WO2009057655A1 (ja) * 2007-10-29 2009-05-07 Mitsubishi Chemical Corporation 半導体発光素子およびその製造方法
US8031754B2 (en) * 2008-04-24 2011-10-04 The Furukawa Electric Co., Ltd. Surface emitting laser element, surface emitting laser element array, method of fabricating a surface emitting laser element

Similar Documents

Publication Publication Date Title
JP2011233783A5 (enExample)
JP2011100994A5 (ja) 半導体装置の作製方法
JP2011100992A5 (enExample)
JP2009049001A5 (enExample)
JP2012256848A5 (enExample)
JP2011076080A5 (enExample)
JP2011009719A5 (enExample)
JP2011077515A5 (ja) 半導体装置
TWI456709B (zh) 半導體裝置及其製造方法
TW201130057A (en) Semiconductor device and manufacturing method thereof
JP2012083733A5 (ja) 発光表示装置の作製方法
WO2012005526A3 (ko) 봉지 구조를 포함하는 유기 발광 소자
WO2012026757A3 (ko) 형광체 필름, 이의 제조방법, 형광층 도포 방법, 발광소자 패키지의 제조방법 및 발광소자 패키지
JP2011211187A5 (ja) 半導体装置
JP2014515560A5 (enExample)
WO2013027041A3 (en) A semiconductor laser device and a method for manufacturing a semiconductor laser device
JP2011155256A5 (ja) トランジスタ
JP2011529244A5 (enExample)
JP2012146838A5 (enExample)
JP2012099599A5 (enExample)
JP2012124486A5 (enExample)
JP2013038112A5 (enExample)
WO2008152945A1 (ja) 半導体発光装置及びその製造方法
JP2011151382A5 (ja) 半導体装置
JP2013125968A5 (enExample)