TW201203613A - Semiconductor light-emitting element, protective film of semiconductor light-emitting element, and method for fabricating same - Google Patents
Semiconductor light-emitting element, protective film of semiconductor light-emitting element, and method for fabricating same Download PDFInfo
- Publication number
- TW201203613A TW201203613A TW100105984A TW100105984A TW201203613A TW 201203613 A TW201203613 A TW 201203613A TW 100105984 A TW100105984 A TW 100105984A TW 100105984 A TW100105984 A TW 100105984A TW 201203613 A TW201203613 A TW 201203613A
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- protective film
- semiconductor light
- emitting device
- sin
- Prior art date
Links
- 230000001681 protective effect Effects 0.000 title claims abstract description 135
- 239000004065 semiconductor Substances 0.000 title claims abstract description 111
- 238000000034 method Methods 0.000 title abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 claims abstract description 19
- 239000010410 layer Substances 0.000 claims description 81
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 229910008051 Si-OH Inorganic materials 0.000 claims description 6
- 229910006358 Si—OH Inorganic materials 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 5
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 3
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 3
- 239000011241 protective layer Substances 0.000 claims description 2
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 2
- 239000004576 sand Substances 0.000 claims description 2
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 claims 1
- 238000002834 transmittance Methods 0.000 abstract description 57
- 238000013508 migration Methods 0.000 abstract description 32
- 230000005012 migration Effects 0.000 abstract description 32
- 230000002265 prevention Effects 0.000 abstract description 21
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 37
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 23
- 230000015572 biosynthetic process Effects 0.000 description 16
- 239000007789 gas Substances 0.000 description 12
- 238000005530 etching Methods 0.000 description 9
- 230000035515 penetration Effects 0.000 description 9
- 238000009413 insulation Methods 0.000 description 8
- 238000000605 extraction Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 230000000149 penetrating effect Effects 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 238000003475 lamination Methods 0.000 description 4
- 238000001771 vacuum deposition Methods 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 102100027045 High affinity choline transporter 1 Human genes 0.000 description 1
- 101000693882 Homo sapiens High affinity choline transporter 1 Proteins 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910020776 SixNy Inorganic materials 0.000 description 1
- 229910020781 SixOy Inorganic materials 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- FQMNUIZEFUVPNU-UHFFFAOYSA-N cobalt iron Chemical compound [Fe].[Co].[Co] FQMNUIZEFUVPNU-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- XZWYZXLIPXDOLR-UHFFFAOYSA-N metformin Chemical compound CN(C)C(=N)NC(N)=N XZWYZXLIPXDOLR-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
- H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
- H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
- H01L2224/02165—Reinforcing structures
- H01L2224/02166—Collar structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/034—Manufacture or treatment of coatings
Landscapes
- Led Devices (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010104443A JP2011233784A (ja) | 2010-04-28 | 2010-04-28 | 半導体発光素子、半導体発光素子の保護膜及びその作製方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201203613A true TW201203613A (en) | 2012-01-16 |
Family
ID=44861210
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100105984A TW201203613A (en) | 2010-04-28 | 2011-02-23 | Semiconductor light-emitting element, protective film of semiconductor light-emitting element, and method for fabricating same |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20130037850A1 (enExample) |
| EP (1) | EP2565946A4 (enExample) |
| JP (1) | JP2011233784A (enExample) |
| KR (1) | KR20120125326A (enExample) |
| TW (1) | TW201203613A (enExample) |
| WO (1) | WO2011135889A1 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011233783A (ja) * | 2010-04-28 | 2011-11-17 | Mitsubishi Heavy Ind Ltd | 半導体発光素子、半導体発光素子の保護膜及びその作製方法 |
| JP2013251423A (ja) * | 2012-06-01 | 2013-12-12 | Mitsubishi Heavy Ind Ltd | 発光素子の保護膜の作製方法及び装置 |
| JP6476854B2 (ja) * | 2014-12-26 | 2019-03-06 | 日亜化学工業株式会社 | 発光素子の製造方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07240535A (ja) * | 1994-02-28 | 1995-09-12 | Kyocera Corp | 薄膜パターンの形成方法 |
| DE69516933T2 (de) * | 1994-04-06 | 2000-12-07 | At&T Ipm Corp., Coral Gables | Herstellungsverfahren für eine Vorrichtung mit einer SiOx Schicht |
| JP3723434B2 (ja) * | 1999-09-24 | 2005-12-07 | 三洋電機株式会社 | 半導体発光素子 |
| JP2003332616A (ja) * | 2002-05-14 | 2003-11-21 | Sharp Corp | 化合物半導体素子およびその製造方法 |
| JP2005286135A (ja) * | 2004-03-30 | 2005-10-13 | Eudyna Devices Inc | 半導体装置および半導体装置の製造方法 |
| JP4543732B2 (ja) * | 2004-04-20 | 2010-09-15 | 日立電線株式会社 | 発光ダイオードアレイ |
| JP2006041403A (ja) | 2004-07-29 | 2006-02-09 | Nichia Chem Ind Ltd | 半導体発光素子 |
| JP2007189097A (ja) | 2006-01-13 | 2007-07-26 | Nichia Chem Ind Ltd | 半導体発光素子 |
| JP2009135466A (ja) * | 2007-10-29 | 2009-06-18 | Mitsubishi Chemicals Corp | 半導体発光素子およびその製造方法 |
| US8031754B2 (en) * | 2008-04-24 | 2011-10-04 | The Furukawa Electric Co., Ltd. | Surface emitting laser element, surface emitting laser element array, method of fabricating a surface emitting laser element |
-
2010
- 2010-04-28 JP JP2010104443A patent/JP2011233784A/ja active Pending
-
2011
- 2011-02-10 KR KR1020127022725A patent/KR20120125326A/ko not_active Ceased
- 2011-02-10 US US13/582,192 patent/US20130037850A1/en not_active Abandoned
- 2011-02-10 WO PCT/JP2011/052814 patent/WO2011135889A1/ja not_active Ceased
- 2011-02-10 EP EP11774674.3A patent/EP2565946A4/en not_active Withdrawn
- 2011-02-23 TW TW100105984A patent/TW201203613A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2011135889A1 (ja) | 2011-11-03 |
| US20130037850A1 (en) | 2013-02-14 |
| KR20120125326A (ko) | 2012-11-14 |
| JP2011233784A (ja) | 2011-11-17 |
| EP2565946A1 (en) | 2013-03-06 |
| EP2565946A4 (en) | 2014-09-10 |
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