KR20120125326A - 반도체 발광 소자, 반도체 발광 소자의 보호막 및 그 제작 방법 - Google Patents

반도체 발광 소자, 반도체 발광 소자의 보호막 및 그 제작 방법 Download PDF

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Publication number
KR20120125326A
KR20120125326A KR1020127022725A KR20127022725A KR20120125326A KR 20120125326 A KR20120125326 A KR 20120125326A KR 1020127022725 A KR1020127022725 A KR 1020127022725A KR 20127022725 A KR20127022725 A KR 20127022725A KR 20120125326 A KR20120125326 A KR 20120125326A
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KR
South Korea
Prior art keywords
film
protective film
semiconductor light
emitting element
light emitting
Prior art date
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Ceased
Application number
KR1020127022725A
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English (en)
Korean (ko)
Inventor
히데따까 가후꾸
도시히꼬 니시모리
히사오 가와사끼
Original Assignee
미츠비시 쥬고교 가부시키가이샤
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Application filed by 미츠비시 쥬고교 가부시키가이샤 filed Critical 미츠비시 쥬고교 가부시키가이샤
Publication of KR20120125326A publication Critical patent/KR20120125326A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
    • H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
    • H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
    • H01L2224/02165—Reinforcing structures
    • H01L2224/02166—Collar structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings

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  • Led Devices (AREA)
  • Formation Of Insulating Films (AREA)
KR1020127022725A 2010-04-28 2011-02-10 반도체 발광 소자, 반도체 발광 소자의 보호막 및 그 제작 방법 Ceased KR20120125326A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010104443A JP2011233784A (ja) 2010-04-28 2010-04-28 半導体発光素子、半導体発光素子の保護膜及びその作製方法
JPJP-P-2010-104443 2010-04-28
PCT/JP2011/052814 WO2011135889A1 (ja) 2010-04-28 2011-02-10 半導体発光素子、半導体発光素子の保護膜及びその作製方法

Publications (1)

Publication Number Publication Date
KR20120125326A true KR20120125326A (ko) 2012-11-14

Family

ID=44861210

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127022725A Ceased KR20120125326A (ko) 2010-04-28 2011-02-10 반도체 발광 소자, 반도체 발광 소자의 보호막 및 그 제작 방법

Country Status (6)

Country Link
US (1) US20130037850A1 (enExample)
EP (1) EP2565946A4 (enExample)
JP (1) JP2011233784A (enExample)
KR (1) KR20120125326A (enExample)
TW (1) TW201203613A (enExample)
WO (1) WO2011135889A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011233783A (ja) * 2010-04-28 2011-11-17 Mitsubishi Heavy Ind Ltd 半導体発光素子、半導体発光素子の保護膜及びその作製方法
JP2013251423A (ja) * 2012-06-01 2013-12-12 Mitsubishi Heavy Ind Ltd 発光素子の保護膜の作製方法及び装置
JP6476854B2 (ja) * 2014-12-26 2019-03-06 日亜化学工業株式会社 発光素子の製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07240535A (ja) * 1994-02-28 1995-09-12 Kyocera Corp 薄膜パターンの形成方法
DE69516933T2 (de) * 1994-04-06 2000-12-07 At&T Ipm Corp., Coral Gables Herstellungsverfahren für eine Vorrichtung mit einer SiOx Schicht
JP3723434B2 (ja) * 1999-09-24 2005-12-07 三洋電機株式会社 半導体発光素子
JP2003332616A (ja) * 2002-05-14 2003-11-21 Sharp Corp 化合物半導体素子およびその製造方法
JP2005286135A (ja) * 2004-03-30 2005-10-13 Eudyna Devices Inc 半導体装置および半導体装置の製造方法
JP4543732B2 (ja) * 2004-04-20 2010-09-15 日立電線株式会社 発光ダイオードアレイ
JP2006041403A (ja) 2004-07-29 2006-02-09 Nichia Chem Ind Ltd 半導体発光素子
JP2007189097A (ja) 2006-01-13 2007-07-26 Nichia Chem Ind Ltd 半導体発光素子
JP2009135466A (ja) * 2007-10-29 2009-06-18 Mitsubishi Chemicals Corp 半導体発光素子およびその製造方法
US8031754B2 (en) * 2008-04-24 2011-10-04 The Furukawa Electric Co., Ltd. Surface emitting laser element, surface emitting laser element array, method of fabricating a surface emitting laser element

Also Published As

Publication number Publication date
WO2011135889A1 (ja) 2011-11-03
US20130037850A1 (en) 2013-02-14
TW201203613A (en) 2012-01-16
JP2011233784A (ja) 2011-11-17
EP2565946A1 (en) 2013-03-06
EP2565946A4 (en) 2014-09-10

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