JP2011233784A - 半導体発光素子、半導体発光素子の保護膜及びその作製方法 - Google Patents

半導体発光素子、半導体発光素子の保護膜及びその作製方法 Download PDF

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Publication number
JP2011233784A
JP2011233784A JP2010104443A JP2010104443A JP2011233784A JP 2011233784 A JP2011233784 A JP 2011233784A JP 2010104443 A JP2010104443 A JP 2010104443A JP 2010104443 A JP2010104443 A JP 2010104443A JP 2011233784 A JP2011233784 A JP 2011233784A
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JP
Japan
Prior art keywords
film
protective film
semiconductor light
emitting device
sin
Prior art date
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Pending
Application number
JP2010104443A
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English (en)
Japanese (ja)
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JP2011233784A5 (enExample
Inventor
Hidenaru Kafuku
秀考 加福
Toshihiko Nishimori
年彦 西森
Hisao Kawasaki
尚夫 河▲崎▼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Heavy Industries Ltd
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Mitsubishi Heavy Industries Ltd
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Publication date
Application filed by Mitsubishi Heavy Industries Ltd filed Critical Mitsubishi Heavy Industries Ltd
Priority to JP2010104443A priority Critical patent/JP2011233784A/ja
Priority to PCT/JP2011/052814 priority patent/WO2011135889A1/ja
Priority to US13/582,192 priority patent/US20130037850A1/en
Priority to EP11774674.3A priority patent/EP2565946A4/en
Priority to KR1020127022725A priority patent/KR20120125326A/ko
Priority to TW100105984A priority patent/TW201203613A/zh
Publication of JP2011233784A publication Critical patent/JP2011233784A/ja
Publication of JP2011233784A5 publication Critical patent/JP2011233784A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
    • H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
    • H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
    • H01L2224/02165—Reinforcing structures
    • H01L2224/02166—Collar structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings

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  • Led Devices (AREA)
  • Formation Of Insulating Films (AREA)
JP2010104443A 2010-04-28 2010-04-28 半導体発光素子、半導体発光素子の保護膜及びその作製方法 Pending JP2011233784A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2010104443A JP2011233784A (ja) 2010-04-28 2010-04-28 半導体発光素子、半導体発光素子の保護膜及びその作製方法
PCT/JP2011/052814 WO2011135889A1 (ja) 2010-04-28 2011-02-10 半導体発光素子、半導体発光素子の保護膜及びその作製方法
US13/582,192 US20130037850A1 (en) 2010-04-28 2011-02-10 Semiconductor light-emitting element, protective film of semiconductor light-emitting element, and method for fabricating same
EP11774674.3A EP2565946A4 (en) 2010-04-28 2011-02-10 LIGHT-EMITTING SEMICONDUCTOR COMPONENT, PROTECTIVE FILM FOR THE LIGHT-EMITTING SEMICONDUCTOR COMPONENT AND METHOD OF MANUFACTURING THEREOF
KR1020127022725A KR20120125326A (ko) 2010-04-28 2011-02-10 반도체 발광 소자, 반도체 발광 소자의 보호막 및 그 제작 방법
TW100105984A TW201203613A (en) 2010-04-28 2011-02-23 Semiconductor light-emitting element, protective film of semiconductor light-emitting element, and method for fabricating same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010104443A JP2011233784A (ja) 2010-04-28 2010-04-28 半導体発光素子、半導体発光素子の保護膜及びその作製方法

Publications (2)

Publication Number Publication Date
JP2011233784A true JP2011233784A (ja) 2011-11-17
JP2011233784A5 JP2011233784A5 (enExample) 2013-06-06

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010104443A Pending JP2011233784A (ja) 2010-04-28 2010-04-28 半導体発光素子、半導体発光素子の保護膜及びその作製方法

Country Status (6)

Country Link
US (1) US20130037850A1 (enExample)
EP (1) EP2565946A4 (enExample)
JP (1) JP2011233784A (enExample)
KR (1) KR20120125326A (enExample)
TW (1) TW201203613A (enExample)
WO (1) WO2011135889A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011233783A (ja) * 2010-04-28 2011-11-17 Mitsubishi Heavy Ind Ltd 半導体発光素子、半導体発光素子の保護膜及びその作製方法
JP2013251423A (ja) * 2012-06-01 2013-12-12 Mitsubishi Heavy Ind Ltd 発光素子の保護膜の作製方法及び装置
JP6476854B2 (ja) * 2014-12-26 2019-03-06 日亜化学工業株式会社 発光素子の製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0856056A (ja) * 1994-04-06 1996-02-27 At & T Corp ＳｉＯ▲ｘ▼層を含む製品及びその製品の作製法
JP2001160650A (ja) * 1999-09-24 2001-06-12 Sanyo Electric Co Ltd 半導体発光素子
JP2005286135A (ja) * 2004-03-30 2005-10-13 Eudyna Devices Inc 半導体装置および半導体装置の製造方法
JP2005310937A (ja) * 2004-04-20 2005-11-04 Hitachi Cable Ltd 発光ダイオードアレイ

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07240535A (ja) * 1994-02-28 1995-09-12 Kyocera Corp 薄膜パターンの形成方法
JP2003332616A (ja) * 2002-05-14 2003-11-21 Sharp Corp 化合物半導体素子およびその製造方法
JP2006041403A (ja) 2004-07-29 2006-02-09 Nichia Chem Ind Ltd 半導体発光素子
JP2007189097A (ja) 2006-01-13 2007-07-26 Nichia Chem Ind Ltd 半導体発光素子
JP2009135466A (ja) * 2007-10-29 2009-06-18 Mitsubishi Chemicals Corp 半導体発光素子およびその製造方法
US8031754B2 (en) * 2008-04-24 2011-10-04 The Furukawa Electric Co., Ltd. Surface emitting laser element, surface emitting laser element array, method of fabricating a surface emitting laser element

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0856056A (ja) * 1994-04-06 1996-02-27 At & T Corp ＳｉＯ▲ｘ▼層を含む製品及びその製品の作製法
JP2001160650A (ja) * 1999-09-24 2001-06-12 Sanyo Electric Co Ltd 半導体発光素子
JP2005286135A (ja) * 2004-03-30 2005-10-13 Eudyna Devices Inc 半導体装置および半導体装置の製造方法
JP2005310937A (ja) * 2004-04-20 2005-11-04 Hitachi Cable Ltd 発光ダイオードアレイ

Also Published As

Publication number Publication date
WO2011135889A1 (ja) 2011-11-03
US20130037850A1 (en) 2013-02-14
TW201203613A (en) 2012-01-16
KR20120125326A (ko) 2012-11-14
EP2565946A1 (en) 2013-03-06
EP2565946A4 (en) 2014-09-10

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