JP4115988B2 - 発光効率を改善した発光ダイオード - Google Patents
発光効率を改善した発光ダイオード Download PDFInfo
- Publication number
- JP4115988B2 JP4115988B2 JP2004359237A JP2004359237A JP4115988B2 JP 4115988 B2 JP4115988 B2 JP 4115988B2 JP 2004359237 A JP2004359237 A JP 2004359237A JP 2004359237 A JP2004359237 A JP 2004359237A JP 4115988 B2 JP4115988 B2 JP 4115988B2
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- Prior art keywords
- emitting diode
- light emitting
- layer
- electrode
- high reflectivity
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- 239000000463 material Substances 0.000 claims description 65
- 238000002310 reflectometry Methods 0.000 claims description 52
- 239000000758 substrate Substances 0.000 claims description 51
- 239000004065 semiconductor Substances 0.000 claims description 47
- 229910052594 sapphire Inorganic materials 0.000 claims description 28
- 239000010980 sapphire Substances 0.000 claims description 28
- 239000010949 copper Substances 0.000 claims description 14
- 229910052802 copper Inorganic materials 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 11
- 238000004544 sputter deposition Methods 0.000 claims description 11
- 229910045601 alloy Inorganic materials 0.000 claims description 10
- 239000000956 alloy Substances 0.000 claims description 10
- 229910052709 silver Inorganic materials 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 238000010894 electron beam technology Methods 0.000 claims description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical group [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 229910052703 rhodium Inorganic materials 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- GENZLHCFIPDZNJ-UHFFFAOYSA-N [In+3].[O-2].[Mg+2] Chemical compound [In+3].[O-2].[Mg+2] GENZLHCFIPDZNJ-UHFFFAOYSA-N 0.000 claims description 3
- RLWNPPOLRLYUAH-UHFFFAOYSA-N [O-2].[In+3].[Cu+2] Chemical compound [O-2].[In+3].[Cu+2] RLWNPPOLRLYUAH-UHFFFAOYSA-N 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- 239000010944 silver (metal) Substances 0.000 claims 1
- 239000007789 gas Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 230000027756 respiratory electron transport chain Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Description
図1に示すように、フリップチップタイプ発光ダイオード(100)は通常サファイア(Al2O3)から成る基板(102)、そのサファイア基板(102)に順次に成長させたメサ形態のn-GaN層(104)、活性層(106)及びp-GaN層(108)を含む。エピタキシ層であるこれらn-GaN層(104)、活性層(106)及びp-GaN層(108)は有機化学気相蒸着(MOCVD: Metal Organic Chemical Vapor Deposition)を利用してサファイア基板(102)上に成長させる。
14 n-半導体層
16 活性層
18 p-半導体層
20 p-電極
22 高反射率物質層
24 n-電極
26 中間層
28 伝導性酸化物層
L 光線
Claims (7)
- サファイア基板;
上記サファイア基板上に成長させたn−半導体層;
上記n−半導体層の殆どの領域上に成長させた活性層;
上記活性層上に成長させたp−半導体層;
上記p−半導体層上に形成したp−電極;
上記n−半導体層の残りの領域上に蒸着させ、Cu及びSiが含まれる高反射率物質層;及び
上記高反射率物質層上に形成したn−電極を含み、
上記高反射率物質層はAg、Al、Pd、Rh及びこれらの合金を含む群から選択された少なくとも一つから成り、
上記高反射率物質層と上記n−電極間にNiから成る中間層をさらに含むことを特徴とする発光ダイオード。 - 上記高反射率物質層はスパッタリングまたは電子ビーム工程により蒸着することを特徴とする請求項1に記載の発光ダイオード。
- 上記n−半導体層の残りの領域と上記高反射率物質層間に形成した伝導性酸化物層をさらに含むことを特徴とする請求項1に記載の発光ダイオード。
- 上記伝導性酸化物層はITO(Indium Tin Oxide)、CIO (Copper Indium Oxide)及びMIO (Magnesium Indium Oxide)を含む群から選択された少なくとも一つであることを特徴とする請求項3に記載の発光ダイオード。
- 上記サファイア基板は炭化珪素基板で代替することを特徴とする請求項1に記載の発光ダイオード。
- 上記高反射率物質層はCu及びSiが添加されたAlであり、上記n−電極はAuであることを特徴とする請求項1に記載の発光ダイオード。
- 上記p−電極は、Ag、Alおよびこれらの合金を含む群から選択された材料により形成される請求項1に記載の発光ダイオード。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040073194A KR100533645B1 (ko) | 2004-09-13 | 2004-09-13 | 발광 효율을 개선한 발광 다이오드 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006080475A JP2006080475A (ja) | 2006-03-23 |
JP4115988B2 true JP4115988B2 (ja) | 2008-07-09 |
Family
ID=36159648
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004359237A Expired - Fee Related JP4115988B2 (ja) | 2004-09-13 | 2004-12-10 | 発光効率を改善した発光ダイオード |
Country Status (3)
Country | Link |
---|---|
US (1) | US20060054909A1 (ja) |
JP (1) | JP4115988B2 (ja) |
KR (1) | KR100533645B1 (ja) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7211833B2 (en) | 2001-07-23 | 2007-05-01 | Cree, Inc. | Light emitting diodes including barrier layers/sublayers |
US7795623B2 (en) | 2004-06-30 | 2010-09-14 | Cree, Inc. | Light emitting devices having current reducing structures and methods of forming light emitting devices having current reducing structures |
US7557380B2 (en) | 2004-07-27 | 2009-07-07 | Cree, Inc. | Light emitting devices having a reflective bond pad and methods of fabricating light emitting devices having reflective bond pads |
US8174037B2 (en) | 2004-09-22 | 2012-05-08 | Cree, Inc. | High efficiency group III nitride LED with lenticular surface |
US7737459B2 (en) * | 2004-09-22 | 2010-06-15 | Cree, Inc. | High output group III nitride light emitting diodes |
US7335920B2 (en) * | 2005-01-24 | 2008-02-26 | Cree, Inc. | LED with current confinement structure and surface roughening |
US20090143658A1 (en) * | 2006-02-27 | 2009-06-04 | Edwards Lifesciences Corporation | Analyte sensor |
JP5056082B2 (ja) * | 2006-04-17 | 2012-10-24 | 日亜化学工業株式会社 | 半導体発光素子 |
JP4959693B2 (ja) * | 2006-05-23 | 2012-06-27 | 学校法人 名城大学 | 半導体発光素子 |
US7501295B2 (en) * | 2006-05-25 | 2009-03-10 | Philips Lumileds Lighting Company, Llc | Method of fabricating a reflective electrode for a semiconductor light emitting device |
US8212262B2 (en) * | 2007-02-09 | 2012-07-03 | Cree, Inc. | Transparent LED chip |
GB201021112D0 (en) | 2010-12-13 | 2011-01-26 | Ntnu Technology Transfer As | Nanowires |
EP2605295A3 (en) * | 2011-12-13 | 2015-11-11 | LG Innotek Co., Ltd. | Ultraviolet light emitting device |
GB201211038D0 (en) | 2012-06-21 | 2012-08-01 | Norwegian Univ Sci & Tech Ntnu | Solar cells |
WO2015029281A1 (ja) * | 2013-08-26 | 2015-03-05 | パナソニックIpマネジメント株式会社 | 半導体発光素子及び半導体発光素子の製造方法 |
ES2821019T3 (es) | 2015-07-13 | 2021-04-23 | Crayonano As | Nanocables o nanopirámides cultivados sobre un sustrato grafítico |
ES2901111T3 (es) * | 2015-07-13 | 2022-03-21 | Crayonano As | Diodos emisores de luz y fotodetectores en forma de nanohilos/nanopirámides |
EP3329509A1 (en) | 2015-07-31 | 2018-06-06 | Crayonano AS | Process for growing nanowires or nanopyramids on graphitic substrates |
GB201705755D0 (en) | 2017-04-10 | 2017-05-24 | Norwegian Univ Of Science And Tech (Ntnu) | Nanostructure |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69433926T2 (de) * | 1993-04-28 | 2005-07-21 | Nichia Corp., Anan | Halbleitervorrichtung aus einer galliumnitridartigen III-V-Halbleiterverbindung |
US6803603B1 (en) * | 1999-06-23 | 2004-10-12 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting element |
US6376375B1 (en) * | 2000-01-13 | 2002-04-23 | Delphi Technologies, Inc. | Process for preventing the formation of a copper precipitate in a copper-containing metallization on a die |
US6569699B1 (en) * | 2000-02-01 | 2003-05-27 | Chartered Semiconductor Manufacturing Ltd. | Two layer mirror for LCD-on-silicon products and method of fabrication thereof |
US6693352B1 (en) * | 2000-06-05 | 2004-02-17 | Emitronix Inc. | Contact structure for group III-V semiconductor devices and method of producing the same |
-
2004
- 2004-09-13 KR KR1020040073194A patent/KR100533645B1/ko not_active IP Right Cessation
- 2004-11-22 US US10/993,371 patent/US20060054909A1/en not_active Abandoned
- 2004-12-10 JP JP2004359237A patent/JP4115988B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20060054909A1 (en) | 2006-03-16 |
KR100533645B1 (ko) | 2005-12-06 |
JP2006080475A (ja) | 2006-03-23 |
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