JP2011233783A - 半導体発光素子、半導体発光素子の保護膜及びその作製方法 - Google Patents

半導体発光素子、半導体発光素子の保護膜及びその作製方法 Download PDF

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Publication number
JP2011233783A
JP2011233783A JP2010104442A JP2010104442A JP2011233783A JP 2011233783 A JP2011233783 A JP 2011233783A JP 2010104442 A JP2010104442 A JP 2010104442A JP 2010104442 A JP2010104442 A JP 2010104442A JP 2011233783 A JP2011233783 A JP 2011233783A
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JP
Japan
Prior art keywords
film
protective film
semiconductor light
sin
emitting device
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Pending
Application number
JP2010104442A
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English (en)
Japanese (ja)
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JP2011233783A5 (enExample
Inventor
Hidenaru Kafuku
秀考 加福
Toshihiko Nishimori
年彦 西森
Hisao Kawasaki
尚夫 河▲崎▼
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Mitsubishi Heavy Industries Ltd
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Mitsubishi Heavy Industries Ltd
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Filing date
Publication date
Application filed by Mitsubishi Heavy Industries Ltd filed Critical Mitsubishi Heavy Industries Ltd
Priority to JP2010104442A priority Critical patent/JP2011233783A/ja
Priority to PCT/JP2011/052813 priority patent/WO2011135888A1/ja
Priority to US13/582,225 priority patent/US20130049063A1/en
Priority to KR1020127022724A priority patent/KR20120120389A/ko
Priority to EP11774673A priority patent/EP2565945A1/en
Priority to TW100105983A priority patent/TW201228036A/zh
Publication of JP2011233783A publication Critical patent/JP2011233783A/ja
Publication of JP2011233783A5 publication Critical patent/JP2011233783A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
    • H10W72/07554—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting changes in dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y10T428/2495—Thickness [relative or absolute]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y10T428/2495—Thickness [relative or absolute]
    • Y10T428/24967—Absolute thicknesses specified
    • Y10T428/24975—No layer or component greater than 5 mils thick

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JP2010104442A 2010-04-28 2010-04-28 半導体発光素子、半導体発光素子の保護膜及びその作製方法 Pending JP2011233783A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2010104442A JP2011233783A (ja) 2010-04-28 2010-04-28 半導体発光素子、半導体発光素子の保護膜及びその作製方法
PCT/JP2011/052813 WO2011135888A1 (ja) 2010-04-28 2011-02-10 半導体発光素子、半導体発光素子の保護膜及びその作製方法
US13/582,225 US20130049063A1 (en) 2010-04-28 2011-02-10 Semiconductor light-emitting element, protective film for semiconductor light-emitting element, and process for production of the protective film
KR1020127022724A KR20120120389A (ko) 2010-04-28 2011-02-10 반도체 발광 소자, 반도체 발광 소자의 보호막 및 그 제작 방법
EP11774673A EP2565945A1 (en) 2010-04-28 2011-02-10 Semiconductor light-emitting element, protective film for semiconductor light-emitting element, and process for production of the protective film
TW100105983A TW201228036A (en) 2010-04-28 2011-02-23 Semiconductor light-emitting device, protection film thereof, and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010104442A JP2011233783A (ja) 2010-04-28 2010-04-28 半導体発光素子、半導体発光素子の保護膜及びその作製方法

Publications (2)

Publication Number Publication Date
JP2011233783A true JP2011233783A (ja) 2011-11-17
JP2011233783A5 JP2011233783A5 (enExample) 2013-06-06

Family

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Family Applications (1)

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JP2010104442A Pending JP2011233783A (ja) 2010-04-28 2010-04-28 半導体発光素子、半導体発光素子の保護膜及びその作製方法

Country Status (6)

Country Link
US (1) US20130049063A1 (enExample)
EP (1) EP2565945A1 (enExample)
JP (1) JP2011233783A (enExample)
KR (1) KR20120120389A (enExample)
TW (1) TW201228036A (enExample)
WO (1) WO2011135888A1 (enExample)

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CN113284999A (zh) * 2021-03-29 2021-08-20 华灿光电(苏州）有限公司 发光二极管芯片及其制备方法

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JP5857786B2 (ja) * 2012-02-21 2016-02-10 日亜化学工業株式会社 半導体発光素子の製造方法
DE102016105056A1 (de) * 2016-03-18 2017-09-21 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
US10505072B2 (en) * 2016-12-16 2019-12-10 Nichia Corporation Method for manufacturing light emitting element
JP6669144B2 (ja) 2016-12-16 2020-03-18 日亜化学工業株式会社 発光素子の製造方法
DE102018101815A1 (de) * 2018-01-26 2019-08-01 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
JP6570702B1 (ja) 2018-05-29 2019-09-04 日機装株式会社 半導体発光素子および半導体発光素子の製造方法
CN109037407B (zh) * 2018-08-03 2024-04-23 厦门乾照光电股份有限公司 半导体发光芯片及其制造方法
JP7023899B2 (ja) * 2019-07-29 2022-02-22 日機装株式会社 半導体発光素子
CN112272870B (zh) * 2020-03-19 2024-04-02 厦门三安光电有限公司 发光二极管
CN114122084B (zh) * 2021-11-09 2024-04-30 深圳市华星光电半导体显示技术有限公司 顶发射oled显示面板

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JP2001160650A (ja) * 1999-09-24 2001-06-12 Sanyo Electric Co Ltd 半導体発光素子
JP2005310937A (ja) * 2004-04-20 2005-11-04 Hitachi Cable Ltd 発光ダイオードアレイ

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JPH0856056A (ja) * 1994-04-06 1996-02-27 At & T Corp ＳｉＯ▲ｘ▼層を含む製品及びその製品の作製法
JP2001160650A (ja) * 1999-09-24 2001-06-12 Sanyo Electric Co Ltd 半導体発光素子
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Cited By (2)

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Publication number Priority date Publication date Assignee Title
CN113284999A (zh) * 2021-03-29 2021-08-20 华灿光电(苏州）有限公司 发光二极管芯片及其制备方法
CN113284999B (zh) * 2021-03-29 2022-06-14 华灿光电(苏州）有限公司 发光二极管芯片及其制备方法

Also Published As

Publication number Publication date
TW201228036A (en) 2012-07-01
KR20120120389A (ko) 2012-11-01
EP2565945A1 (en) 2013-03-06
US20130049063A1 (en) 2013-02-28
WO2011135888A1 (ja) 2011-11-03

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