KR20120120389A - 반도체 발광 소자, 반도체 발광 소자의 보호막 및 그 제작 방법 - Google Patents

반도체 발광 소자, 반도체 발광 소자의 보호막 및 그 제작 방법 Download PDF

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Publication number
KR20120120389A
KR20120120389A KR1020127022724A KR20127022724A KR20120120389A KR 20120120389 A KR20120120389 A KR 20120120389A KR 1020127022724 A KR1020127022724 A KR 1020127022724A KR 20127022724 A KR20127022724 A KR 20127022724A KR 20120120389 A KR20120120389 A KR 20120120389A
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KR
South Korea
Prior art keywords
protective film
film
semiconductor light
light emitting
emitting element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020127022724A
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English (en)
Korean (ko)
Inventor
히데따까 가후꾸
도시히꼬 니시모리
히사오 가와사끼
Original Assignee
미츠비시 쥬고교 가부시키가이샤
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Application filed by 미츠비시 쥬고교 가부시키가이샤 filed Critical 미츠비시 쥬고교 가부시키가이샤
Publication of KR20120120389A publication Critical patent/KR20120120389A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
    • H10W72/07554—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting changes in dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y10T428/2495—Thickness [relative or absolute]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y10T428/2495—Thickness [relative or absolute]
    • Y10T428/24967—Absolute thicknesses specified
    • Y10T428/24975—No layer or component greater than 5 mils thick

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  • Led Devices (AREA)
KR1020127022724A 2010-04-28 2011-02-10 반도체 발광 소자, 반도체 발광 소자의 보호막 및 그 제작 방법 Ceased KR20120120389A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2010-104442 2010-04-28
JP2010104442A JP2011233783A (ja) 2010-04-28 2010-04-28 半導体発光素子、半導体発光素子の保護膜及びその作製方法
PCT/JP2011/052813 WO2011135888A1 (ja) 2010-04-28 2011-02-10 半導体発光素子、半導体発光素子の保護膜及びその作製方法

Publications (1)

Publication Number Publication Date
KR20120120389A true KR20120120389A (ko) 2012-11-01

Family

ID=44861209

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127022724A Ceased KR20120120389A (ko) 2010-04-28 2011-02-10 반도체 발광 소자, 반도체 발광 소자의 보호막 및 그 제작 방법

Country Status (6)

Country Link
US (1) US20130049063A1 (enExample)
EP (1) EP2565945A1 (enExample)
JP (1) JP2011233783A (enExample)
KR (1) KR20120120389A (enExample)
TW (1) TW201228036A (enExample)
WO (1) WO2011135888A1 (enExample)

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JP5857786B2 (ja) * 2012-02-21 2016-02-10 日亜化学工業株式会社 半導体発光素子の製造方法
DE102016105056A1 (de) * 2016-03-18 2017-09-21 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
US10505072B2 (en) * 2016-12-16 2019-12-10 Nichia Corporation Method for manufacturing light emitting element
JP6669144B2 (ja) 2016-12-16 2020-03-18 日亜化学工業株式会社 発光素子の製造方法
DE102018101815A1 (de) * 2018-01-26 2019-08-01 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
JP6570702B1 (ja) 2018-05-29 2019-09-04 日機装株式会社 半導体発光素子および半導体発光素子の製造方法
CN109037407B (zh) * 2018-08-03 2024-04-23 厦门乾照光电股份有限公司 半导体发光芯片及其制造方法
JP7023899B2 (ja) * 2019-07-29 2022-02-22 日機装株式会社 半導体発光素子
CN112272870B (zh) * 2020-03-19 2024-04-02 厦门三安光电有限公司 发光二极管
CN113284999B (zh) * 2021-03-29 2022-06-14 华灿光电(苏州）有限公司 发光二极管芯片及其制备方法
CN114122084B (zh) * 2021-11-09 2024-04-30 深圳市华星光电半导体显示技术有限公司 顶发射oled显示面板

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JPH07240535A (ja) * 1994-02-28 1995-09-12 Kyocera Corp 薄膜パターンの形成方法
EP0676797B1 (en) * 1994-04-06 2000-05-17 AT&T IPM Corp. Method of making an article comprising a SiOx layer
JP3292044B2 (ja) * 1996-05-31 2002-06-17 豊田合成株式会社 ｐ伝導形３族窒化物半導体の電極パッド及びそれを有した素子及び素子の製造方法
US6936859B1 (en) * 1998-05-13 2005-08-30 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using group III nitride compound
ATE452445T1 (de) * 1999-03-04 2010-01-15 Nichia Corp Nitridhalbleiterlaserelement
JP3723434B2 (ja) * 1999-09-24 2005-12-07 三洋電機株式会社 半導体発光素子
US20020017652A1 (en) * 2000-08-08 2002-02-14 Stefan Illek Semiconductor chip for optoelectronics
US6445007B1 (en) * 2001-03-19 2002-09-03 Uni Light Technology Inc. Light emitting diodes with spreading and improving light emitting area
JP2003031840A (ja) * 2001-07-11 2003-01-31 Hitachi Cable Ltd 発光ダイオードアレイ
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US6841802B2 (en) * 2002-06-26 2005-01-11 Oriol, Inc. Thin film light emitting diode
JP3795007B2 (ja) * 2002-11-27 2006-07-12 松下電器産業株式会社 半導体発光素子及びその製造方法
US6744196B1 (en) * 2002-12-11 2004-06-01 Oriol, Inc. Thin film LED
KR100593886B1 (ko) * 2003-06-24 2006-07-03 삼성전기주식회사 질화갈륨계 반도체 발광소자의 제조방법
US7601553B2 (en) * 2003-07-18 2009-10-13 Epivalley Co., Ltd. Method of manufacturing a gallium nitride semiconductor light emitting device
JP4543732B2 (ja) * 2004-04-20 2010-09-15 日立電線株式会社 発光ダイオードアレイ
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JP2006041403A (ja) 2004-07-29 2006-02-09 Nichia Chem Ind Ltd 半導体発光素子
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JP4172515B2 (ja) * 2006-10-18 2008-10-29 ソニー株式会社 発光素子の製造方法
TWI344709B (en) * 2007-06-14 2011-07-01 Epistar Corp Light emitting device
JP5057398B2 (ja) * 2008-08-05 2012-10-24 シャープ株式会社 窒化物半導体発光素子およびその製造方法
KR101081135B1 (ko) * 2010-03-15 2011-11-07 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
JP2011233784A (ja) * 2010-04-28 2011-11-17 Mitsubishi Heavy Ind Ltd 半導体発光素子、半導体発光素子の保護膜及びその作製方法
TW201145614A (en) * 2010-06-03 2011-12-16 Toshiba Kk Method for manufacturing light-emitting device and light-emitting device manufactured by the same

Also Published As

Publication number Publication date
TW201228036A (en) 2012-07-01
JP2011233783A (ja) 2011-11-17
EP2565945A1 (en) 2013-03-06
US20130049063A1 (en) 2013-02-28
WO2011135888A1 (ja) 2011-11-03

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