TW201228036A - Semiconductor light-emitting device, protection film thereof, and its manufacturing method - Google Patents

Semiconductor light-emitting device, protection film thereof, and its manufacturing method Download PDF

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Publication number
TW201228036A
TW201228036A TW100105983A TW100105983A TW201228036A TW 201228036 A TW201228036 A TW 201228036A TW 100105983 A TW100105983 A TW 100105983A TW 100105983 A TW100105983 A TW 100105983A TW 201228036 A TW201228036 A TW 201228036A
Authority
TW
Taiwan
Prior art keywords
film
protective film
emitting device
semiconductor light
sin
Prior art date
Application number
TW100105983A
Other languages
English (en)
Chinese (zh)
Inventor
Hidetaka Kafuku
Toshihiko Nishimori
Hisao Kawasaki
Original Assignee
Mitsubishi Heavy Ind Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Heavy Ind Ltd filed Critical Mitsubishi Heavy Ind Ltd
Publication of TW201228036A publication Critical patent/TW201228036A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
    • H10W72/07554—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting changes in dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y10T428/2495—Thickness [relative or absolute]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y10T428/2495—Thickness [relative or absolute]
    • Y10T428/24967—Absolute thicknesses specified
    • Y10T428/24975—No layer or component greater than 5 mils thick

Landscapes

  • Led Devices (AREA)
TW100105983A 2010-04-28 2011-02-23 Semiconductor light-emitting device, protection film thereof, and its manufacturing method TW201228036A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010104442A JP2011233783A (ja) 2010-04-28 2010-04-28 半導体発光素子、半導体発光素子の保護膜及びその作製方法

Publications (1)

Publication Number Publication Date
TW201228036A true TW201228036A (en) 2012-07-01

Family

ID=44861209

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100105983A TW201228036A (en) 2010-04-28 2011-02-23 Semiconductor light-emitting device, protection film thereof, and its manufacturing method

Country Status (6)

Country Link
US (1) US20130049063A1 (enExample)
EP (1) EP2565945A1 (enExample)
JP (1) JP2011233783A (enExample)
KR (1) KR20120120389A (enExample)
TW (1) TW201228036A (enExample)
WO (1) WO2011135888A1 (enExample)

Cited By (2)

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CN109037407A (zh) * 2018-08-03 2018-12-18 厦门乾照光电股份有限公司 半导体发光芯片及其制造方法
CN114122084A (zh) * 2021-11-09 2022-03-01 深圳市华星光电半导体显示技术有限公司 顶发射oled显示面板

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JP5857786B2 (ja) * 2012-02-21 2016-02-10 日亜化学工業株式会社 半導体発光素子の製造方法
DE102016105056A1 (de) * 2016-03-18 2017-09-21 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
US10505072B2 (en) * 2016-12-16 2019-12-10 Nichia Corporation Method for manufacturing light emitting element
JP6669144B2 (ja) 2016-12-16 2020-03-18 日亜化学工業株式会社 発光素子の製造方法
DE102018101815A1 (de) * 2018-01-26 2019-08-01 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
JP6570702B1 (ja) 2018-05-29 2019-09-04 日機装株式会社 半導体発光素子および半導体発光素子の製造方法
JP7023899B2 (ja) * 2019-07-29 2022-02-22 日機装株式会社 半導体発光素子
CN112272870B (zh) * 2020-03-19 2024-04-02 厦门三安光电有限公司 发光二极管
CN113284999B (zh) * 2021-03-29 2022-06-14 华灿光电(苏州）有限公司 发光二极管芯片及其制备方法

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EP0952617B1 (en) * 1993-04-28 2004-07-28 Nichia Corporation Gallium nitride-based III-V group compound semiconductor device
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EP0676797B1 (en) * 1994-04-06 2000-05-17 AT&T IPM Corp. Method of making an article comprising a SiOx layer
JP3292044B2 (ja) * 1996-05-31 2002-06-17 豊田合成株式会社 ｐ伝導形３族窒化物半導体の電極パッド及びそれを有した素子及び素子の製造方法
US6936859B1 (en) * 1998-05-13 2005-08-30 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using group III nitride compound
ATE452445T1 (de) * 1999-03-04 2010-01-15 Nichia Corp Nitridhalbleiterlaserelement
JP3723434B2 (ja) * 1999-09-24 2005-12-07 三洋電機株式会社 半導体発光素子
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KR100593886B1 (ko) * 2003-06-24 2006-07-03 삼성전기주식회사 질화갈륨계 반도체 발광소자의 제조방법
US7601553B2 (en) * 2003-07-18 2009-10-13 Epivalley Co., Ltd. Method of manufacturing a gallium nitride semiconductor light emitting device
JP4543732B2 (ja) * 2004-04-20 2010-09-15 日立電線株式会社 発光ダイオードアレイ
US7166483B2 (en) * 2004-06-17 2007-01-23 Tekcore Co., Ltd. High brightness light-emitting device and manufacturing process of the light-emitting device
JP2006041403A (ja) 2004-07-29 2006-02-09 Nichia Chem Ind Ltd 半導体発光素子
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JP2011233784A (ja) * 2010-04-28 2011-11-17 Mitsubishi Heavy Ind Ltd 半導体発光素子、半導体発光素子の保護膜及びその作製方法
TW201145614A (en) * 2010-06-03 2011-12-16 Toshiba Kk Method for manufacturing light-emitting device and light-emitting device manufactured by the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109037407A (zh) * 2018-08-03 2018-12-18 厦门乾照光电股份有限公司 半导体发光芯片及其制造方法
CN109037407B (zh) * 2018-08-03 2024-04-23 厦门乾照光电股份有限公司 半导体发光芯片及其制造方法
CN114122084A (zh) * 2021-11-09 2022-03-01 深圳市华星光电半导体显示技术有限公司 顶发射oled显示面板
CN114122084B (zh) * 2021-11-09 2024-04-30 深圳市华星光电半导体显示技术有限公司 顶发射oled显示面板

Also Published As

Publication number Publication date
KR20120120389A (ko) 2012-11-01
JP2011233783A (ja) 2011-11-17
EP2565945A1 (en) 2013-03-06
US20130049063A1 (en) 2013-02-28
WO2011135888A1 (ja) 2011-11-03

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