TWI282636B - Semiconductor light-emitting device and manufacturing method thereof - Google Patents

Semiconductor light-emitting device and manufacturing method thereof Download PDF

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Publication number
TWI282636B
TWI282636B TW094147367A TW94147367A TWI282636B TW I282636 B TWI282636 B TW I282636B TW 094147367 A TW094147367 A TW 094147367A TW 94147367 A TW94147367 A TW 94147367A TW I282636 B TWI282636 B TW I282636B
Authority
TW
Taiwan
Prior art keywords
layer
semiconductor light
emitting device
barrier layer
barrier
Prior art date
Application number
TW094147367A
Other languages
English (en)
Chinese (zh)
Other versions
TW200725942A (en
Inventor
Shih-Nan Yen
Jung-Tu Chiu
Yu-Jiun Shen
Ching-Fu Tsai
Original Assignee
Epistar Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epistar Corp filed Critical Epistar Corp
Priority to TW094147367A priority Critical patent/TWI282636B/zh
Priority to JP2006344237A priority patent/JP2007184585A/ja
Priority to KR1020060136690A priority patent/KR101054785B1/ko
Priority to US11/647,170 priority patent/US7615773B2/en
Application granted granted Critical
Publication of TWI282636B publication Critical patent/TWI282636B/zh
Publication of TW200725942A publication Critical patent/TW200725942A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping

Landscapes

  • Led Devices (AREA)
TW094147367A 2005-12-29 2005-12-29 Semiconductor light-emitting device and manufacturing method thereof TWI282636B (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
TW094147367A TWI282636B (en) 2005-12-29 2005-12-29 Semiconductor light-emitting device and manufacturing method thereof
JP2006344237A JP2007184585A (ja) 2005-12-29 2006-12-21 半導体発光素子及びその製造方法
KR1020060136690A KR101054785B1 (ko) 2005-12-29 2006-12-28 반도체 발광 소자 및 그 제조 방법
US11/647,170 US7615773B2 (en) 2005-12-29 2006-12-29 Semiconductor light-emitting device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW094147367A TWI282636B (en) 2005-12-29 2005-12-29 Semiconductor light-emitting device and manufacturing method thereof

Publications (2)

Publication Number Publication Date
TWI282636B true TWI282636B (en) 2007-06-11
TW200725942A TW200725942A (en) 2007-07-01

Family

ID=38223452

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094147367A TWI282636B (en) 2005-12-29 2005-12-29 Semiconductor light-emitting device and manufacturing method thereof

Country Status (4)

Country Link
US (1) US7615773B2 (enExample)
JP (1) JP2007184585A (enExample)
KR (1) KR101054785B1 (enExample)
TW (1) TWI282636B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7910256B2 (en) 2008-07-11 2011-03-22 Institute Of Nuclear Energy Research Atomic Energy Council, Executive Yuan Method for supplying fuel to fuel cell
US7953134B2 (en) 2008-12-31 2011-05-31 Epistar Corporation Semiconductor light-emitting device

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI360891B (en) * 2007-04-09 2012-03-21 Epistar Corp Light emitting device
KR101316492B1 (ko) * 2007-04-23 2013-10-10 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조 방법
KR100905877B1 (ko) * 2007-11-19 2009-07-03 삼성전기주식회사 질화물 반도체 소자
CN103426985B (zh) * 2012-05-25 2016-10-12 徐亦敏 发光二极管
KR101955313B1 (ko) * 2012-11-12 2019-03-08 엘지이노텍 주식회사 발광소자
JP6679767B1 (ja) * 2019-01-07 2020-04-15 Ｄｏｗａエレクトロニクス株式会社 半導体発光素子及び半導体発光素子の製造方法
JP7260807B2 (ja) * 2020-12-24 2023-04-19 日亜化学工業株式会社 窒化物半導体発光素子およびその製造方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07122812A (ja) * 1993-10-27 1995-05-12 Fujitsu Ltd 半導体レーザ
JPH07263808A (ja) * 1994-03-18 1995-10-13 Fujitsu Ltd 半導体レーザ
WO1998019375A1 (en) * 1996-10-30 1998-05-07 Hitachi, Ltd. Optical information processor and semiconductor light emitting device suitable for the same
JP2000042685A (ja) * 1998-05-19 2000-02-15 Reizu Eng:Kk 貫通孔を有するディスク部の形成方法、貫通孔を有するディスク部を備えた自動車用ホイ―ルの製造方法、熱間鍛造装置
JP3705047B2 (ja) 1998-12-15 2005-10-12 日亜化学工業株式会社 窒化物半導体発光素子
JP3438648B2 (ja) * 1999-05-17 2003-08-18 松下電器産業株式会社 窒化物半導体素子
TW425726B (en) 1999-10-08 2001-03-11 Epistar Corp A high-luminance light emitting diode with distributed contact layer
JP3711020B2 (ja) * 1999-12-27 2005-10-26 三洋電機株式会社 発光素子
CN1158714C (zh) 2000-06-20 2004-07-21 晶元光电股份有限公司 具有分布式接触层的高亮度发光二极管
US7009210B2 (en) 2000-10-06 2006-03-07 Alphion Corporation Method and apparatus for bit-rate and format insensitive performance monitoring of lightwave signals
JP2002270969A (ja) * 2001-03-07 2002-09-20 Sharp Corp 窒化物半導体発光素子およびそれを用いた光学装置
JP4390433B2 (ja) * 2002-06-19 2009-12-24 シャープ株式会社 窒化物半導体レーザ及びその製造方法
JP4285949B2 (ja) * 2002-06-27 2009-06-24 シャープ株式会社 窒化物半導体発光素子
TW544958B (en) 2002-07-15 2003-08-01 Epistar Corp Light emitting diode with an adhesive layer and its manufacturing method
JP2004087908A (ja) * 2002-08-28 2004-03-18 Sharp Corp 窒化物半導体発光素子、その製造方法、それを搭載した光学装置
TWI234915B (en) 2002-11-18 2005-06-21 Pioneer Corp Semiconductor light-emitting element and method of manufacturing the same
CN100573932C (zh) 2003-05-16 2009-12-23 晶元光电股份有限公司 具有粘结层的发光二极管及其制造方法
JP2005302784A (ja) * 2004-04-06 2005-10-27 Matsushita Electric Ind Co Ltd 半導体発光素子及びその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7910256B2 (en) 2008-07-11 2011-03-22 Institute Of Nuclear Energy Research Atomic Energy Council, Executive Yuan Method for supplying fuel to fuel cell
US7953134B2 (en) 2008-12-31 2011-05-31 Epistar Corporation Semiconductor light-emitting device

Also Published As

Publication number Publication date
JP2007184585A (ja) 2007-07-19
KR20070072395A (ko) 2007-07-04
US7615773B2 (en) 2009-11-10
US20070152207A1 (en) 2007-07-05
TW200725942A (en) 2007-07-01
KR101054785B1 (ko) 2011-08-05

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