JP2011513955A5 - - Google Patents

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Publication number
JP2011513955A5
JP2011513955A5 JP2010547944A JP2010547944A JP2011513955A5 JP 2011513955 A5 JP2011513955 A5 JP 2011513955A5 JP 2010547944 A JP2010547944 A JP 2010547944A JP 2010547944 A JP2010547944 A JP 2010547944A JP 2011513955 A5 JP2011513955 A5 JP 2011513955A5
Authority
JP
Japan
Prior art keywords
layer
emitting diode
light emitting
oxide
type doped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010547944A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011513955A (ja
Filing date
Publication date
Priority claimed from DE102008027045A external-priority patent/DE102008027045A1/de
Application filed filed Critical
Publication of JP2011513955A publication Critical patent/JP2011513955A/ja
Publication of JP2011513955A5 publication Critical patent/JP2011513955A5/ja
Pending legal-status Critical Current

Links

JP2010547944A 2008-02-29 2009-02-11 半導体発光ダイオードおよび半導体発光ダイオードの製造方法 Pending JP2011513955A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102008011847 2008-02-29
DE102008027045A DE102008027045A1 (de) 2008-02-29 2008-06-06 Halbleiterleuchtdiode und Verfahren zur Herstellung einer Halbleiterleuchtdiode
PCT/DE2009/000192 WO2009106038A1 (de) 2008-02-29 2009-02-11 Halbleiterleuchtdiode und verfahren zur herstellung einer halbleiterleuchtdiode

Publications (2)

Publication Number Publication Date
JP2011513955A JP2011513955A (ja) 2011-04-28
JP2011513955A5 true JP2011513955A5 (enExample) 2012-03-22

Family

ID=40911446

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010547944A Pending JP2011513955A (ja) 2008-02-29 2009-02-11 半導体発光ダイオードおよび半導体発光ダイオードの製造方法

Country Status (8)

Country Link
US (1) US8772804B2 (enExample)
EP (1) EP2248191B1 (enExample)
JP (1) JP2011513955A (enExample)
KR (2) KR101935642B1 (enExample)
CN (1) CN101960623B (enExample)
DE (1) DE102008027045A1 (enExample)
TW (1) TWI394297B (enExample)
WO (1) WO2009106038A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8604500B2 (en) * 2010-03-17 2013-12-10 Lg Innotek Co., Ltd. Light emitting device and light emitting device package
JP5830166B2 (ja) * 2011-05-25 2015-12-09 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ オプトエレクトロニクス半導体チップ
TW201322489A (zh) * 2011-11-29 2013-06-01 Genesis Photonics Inc 發光二極體元件及覆晶式發光二極體封裝元件
CN103247732B (zh) * 2012-02-14 2018-02-06 晶元光电股份有限公司 具有平整表面的电流扩散层的发光元件
DE102012106998A1 (de) * 2012-07-31 2014-02-06 Osram Opto Semiconductors Gmbh Reflektierendes Kontaktschichtsystem für ein optoelektronisches Bauelement und Verfahren zu dessen Herstellung
DE102015102454A1 (de) 2015-02-20 2016-08-25 Osram Opto Semiconductors Gmbh Verfahren zur Strukturierung einer Nitridschicht, strukturierte Dielektrikumschicht, optoelektronisches Bauelement, Ätzverfahren zum Ätzen von Schichten und Umgebungssensor
DE102015108875B4 (de) * 2015-06-04 2016-12-15 Otto-Von-Guericke-Universität Magdeburg Bauelement mit einer transparenten leitfähigen Nitridschicht
KR102519668B1 (ko) 2016-06-21 2023-04-07 삼성전자주식회사 반도체 발광 소자 및 그 제조 방법
KR102476139B1 (ko) 2016-08-03 2022-12-09 삼성전자주식회사 반도체 발광소자
KR102543183B1 (ko) 2018-01-26 2023-06-14 삼성전자주식회사 반도체 발광소자

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6876003B1 (en) * 1999-04-15 2005-04-05 Sumitomo Electric Industries, Ltd. Semiconductor light-emitting device, method of manufacturing transparent conductor film and method of manufacturing compound semiconductor light-emitting device
JP2001009583A (ja) * 1999-06-29 2001-01-16 Canon Inc レーザ加工装置
DE10023459A1 (de) * 2000-05-12 2001-11-15 Balzers Process Systems Gmbh Indium-Zinn-Oxid (ITO)-Schicht und Verfahren zur Herstellung derselben
US6784462B2 (en) 2001-12-13 2004-08-31 Rensselaer Polytechnic Institute Light-emitting diode with planar omni-directional reflector
JP4207781B2 (ja) 2002-01-28 2009-01-14 日亜化学工業株式会社 支持基板を有する窒化物半導体素子及びその製造方法
JP4174581B2 (ja) * 2002-10-23 2008-11-05 信越半導体株式会社 発光素子の製造方法
US7041529B2 (en) * 2002-10-23 2006-05-09 Shin-Etsu Handotai Co., Ltd. Light-emitting device and method of fabricating the same
KR20050051920A (ko) 2003-11-28 2005-06-02 삼성전자주식회사 플립칩형 질화물계 발광소자 및 그 제조방법
US20050236630A1 (en) * 2004-04-23 2005-10-27 Wang-Nang Wang Transparent contact for light emitting diode
DE102005013894B4 (de) 2004-06-30 2010-06-17 Osram Opto Semiconductors Gmbh Elektromagnetische Strahlung erzeugender Halbleiterchip und Verfahren zu dessen Herstellung
DE102004050891B4 (de) * 2004-10-19 2019-01-10 Lumileds Holding B.V. Lichtmittierende III-Nitrid-Halbleitervorrichtung
KR101139891B1 (ko) 2005-01-31 2012-04-27 렌슬러 폴리테크닉 인스티튜트 확산 반사면을 구비한 발광 다이오드 소자
KR100609117B1 (ko) * 2005-05-03 2006-08-08 삼성전기주식회사 질화물계 반도체 발광소자 및 그 제조방법
US7384808B2 (en) 2005-07-12 2008-06-10 Visual Photonics Epitaxy Co., Ltd. Fabrication method of high-brightness light emitting diode having reflective layer
DE102005035722B9 (de) * 2005-07-29 2021-11-18 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung
EP1750310A3 (en) 2005-08-03 2009-07-15 Samsung Electro-Mechanics Co., Ltd. Omni-directional reflector and light emitting diode adopting the same
DE102006023685A1 (de) 2005-09-29 2007-04-05 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
DE102005061346A1 (de) * 2005-09-30 2007-04-05 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
CN101395728B (zh) * 2006-03-10 2011-04-13 松下电工株式会社 发光元件及其制造方法
JP2007273975A (ja) * 2006-03-10 2007-10-18 Matsushita Electric Works Ltd 発光素子
DE102007002416A1 (de) 2006-04-13 2007-10-18 Osram Opto Semiconductors Gmbh Strahlungsemittierender Körper und Verfahren zur Herstellung eines strahlungsemittierenden Körpers
DE102007029370A1 (de) * 2007-05-04 2008-11-06 Osram Opto Semiconductors Gmbh Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips
DE102007035687A1 (de) 2007-07-30 2009-02-05 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit einem Schichtenstapel
US20090104733A1 (en) * 2007-10-22 2009-04-23 Yong Kee Chae Microcrystalline silicon deposition for thin film solar applications
DE102008024517A1 (de) * 2007-12-27 2009-07-02 Osram Opto Semiconductors Gmbh Strahlungsemittierender Körper und Verfahren zur Herstellung eines strahlungsemittierenden Körpers

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