TWI394297B - 半導體發光二極體及其製造方法 - Google Patents
半導體發光二極體及其製造方法 Download PDFInfo
- Publication number
- TWI394297B TWI394297B TW098105936A TW98105936A TWI394297B TW I394297 B TWI394297 B TW I394297B TW 098105936 A TW098105936 A TW 098105936A TW 98105936 A TW98105936 A TW 98105936A TW I394297 B TWI394297 B TW I394297B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- emitting diode
- oxide
- interface
- doped
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 137
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 23
- 239000002019 doping agent Substances 0.000 claims description 20
- 238000004544 sputter deposition Methods 0.000 claims description 20
- 238000000151 deposition Methods 0.000 claims description 13
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
- 239000011787 zinc oxide Substances 0.000 claims description 4
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010410 layer Substances 0.000 claims 73
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- 229910003437 indium oxide Inorganic materials 0.000 claims 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims 1
- 239000002344 surface layer Substances 0.000 claims 1
- 230000005855 radiation Effects 0.000 description 17
- 239000000463 material Substances 0.000 description 15
- 230000005670 electromagnetic radiation Effects 0.000 description 13
- 238000000034 method Methods 0.000 description 10
- 239000000758 substrate Substances 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910002601 GaN Inorganic materials 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000005641 tunneling Effects 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/832—Electrodes characterised by their material
- H10H20/835—Reflective materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
- H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/832—Electrodes characterised by their material
- H10H20/833—Transparent materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
- H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
Landscapes
- Led Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102008011847 | 2008-02-29 | ||
| DE102008027045A DE102008027045A1 (de) | 2008-02-29 | 2008-06-06 | Halbleiterleuchtdiode und Verfahren zur Herstellung einer Halbleiterleuchtdiode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200945635A TW200945635A (en) | 2009-11-01 |
| TWI394297B true TWI394297B (zh) | 2013-04-21 |
Family
ID=40911446
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098105936A TWI394297B (zh) | 2008-02-29 | 2009-02-25 | 半導體發光二極體及其製造方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US8772804B2 (enExample) |
| EP (1) | EP2248191B1 (enExample) |
| JP (1) | JP2011513955A (enExample) |
| KR (2) | KR101645738B1 (enExample) |
| CN (1) | CN101960623B (enExample) |
| DE (1) | DE102008027045A1 (enExample) |
| TW (1) | TWI394297B (enExample) |
| WO (1) | WO2009106038A1 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102194947B (zh) * | 2010-03-17 | 2015-11-25 | Lg伊诺特有限公司 | 发光器件和发光器件封装 |
| US9373765B2 (en) | 2011-05-25 | 2016-06-21 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor chip |
| TW201322489A (zh) * | 2011-11-29 | 2013-06-01 | Genesis Photonics Inc | 發光二極體元件及覆晶式發光二極體封裝元件 |
| CN108054261A (zh) * | 2012-02-14 | 2018-05-18 | 晶元光电股份有限公司 | 具有平整表面的电流扩散层的发光元件 |
| DE102012106998A1 (de) * | 2012-07-31 | 2014-02-06 | Osram Opto Semiconductors Gmbh | Reflektierendes Kontaktschichtsystem für ein optoelektronisches Bauelement und Verfahren zu dessen Herstellung |
| DE102015102454A1 (de) | 2015-02-20 | 2016-08-25 | Osram Opto Semiconductors Gmbh | Verfahren zur Strukturierung einer Nitridschicht, strukturierte Dielektrikumschicht, optoelektronisches Bauelement, Ätzverfahren zum Ätzen von Schichten und Umgebungssensor |
| DE102015108875B4 (de) * | 2015-06-04 | 2016-12-15 | Otto-Von-Guericke-Universität Magdeburg | Bauelement mit einer transparenten leitfähigen Nitridschicht |
| KR102519668B1 (ko) | 2016-06-21 | 2023-04-07 | 삼성전자주식회사 | 반도체 발광 소자 및 그 제조 방법 |
| KR102476139B1 (ko) | 2016-08-03 | 2022-12-09 | 삼성전자주식회사 | 반도체 발광소자 |
| KR102543183B1 (ko) | 2018-01-26 | 2023-06-14 | 삼성전자주식회사 | 반도체 발광소자 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6849165B2 (en) * | 2000-05-12 | 2005-02-01 | Unaxis Deutschland Gmbh | Indium-tin oxide (ITO) layer and method for producing the same |
| US20060249736A1 (en) * | 2005-05-03 | 2006-11-09 | Samsung Electro-Mechanics Co., Ltd. | Nitride semiconductor light emitting device and method of manufacturing the same |
| TW200721549A (en) * | 2005-09-29 | 2007-06-01 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor chip |
| WO2007105626A1 (ja) * | 2006-03-10 | 2007-09-20 | Matsushita Electric Works, Ltd. | 発光素子 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6876003B1 (en) * | 1999-04-15 | 2005-04-05 | Sumitomo Electric Industries, Ltd. | Semiconductor light-emitting device, method of manufacturing transparent conductor film and method of manufacturing compound semiconductor light-emitting device |
| JP2001009583A (ja) * | 1999-06-29 | 2001-01-16 | Canon Inc | レーザ加工装置 |
| US6784462B2 (en) | 2001-12-13 | 2004-08-31 | Rensselaer Polytechnic Institute | Light-emitting diode with planar omni-directional reflector |
| ATE445233T1 (de) | 2002-01-28 | 2009-10-15 | Nichia Corp | Nitrid-halbleiterbauelement mit einem trägersubstrat und verfahren zu seiner herstellung |
| US7041529B2 (en) * | 2002-10-23 | 2006-05-09 | Shin-Etsu Handotai Co., Ltd. | Light-emitting device and method of fabricating the same |
| JP4174581B2 (ja) * | 2002-10-23 | 2008-11-05 | 信越半導体株式会社 | 発光素子の製造方法 |
| KR20050051920A (ko) * | 2003-11-28 | 2005-06-02 | 삼성전자주식회사 | 플립칩형 질화물계 발광소자 및 그 제조방법 |
| US20050236630A1 (en) * | 2004-04-23 | 2005-10-27 | Wang-Nang Wang | Transparent contact for light emitting diode |
| DE102005013894B4 (de) * | 2004-06-30 | 2010-06-17 | Osram Opto Semiconductors Gmbh | Elektromagnetische Strahlung erzeugender Halbleiterchip und Verfahren zu dessen Herstellung |
| DE102004050891B4 (de) * | 2004-10-19 | 2019-01-10 | Lumileds Holding B.V. | Lichtmittierende III-Nitrid-Halbleitervorrichtung |
| KR101139891B1 (ko) | 2005-01-31 | 2012-04-27 | 렌슬러 폴리테크닉 인스티튜트 | 확산 반사면을 구비한 발광 다이오드 소자 |
| US7384808B2 (en) | 2005-07-12 | 2008-06-10 | Visual Photonics Epitaxy Co., Ltd. | Fabrication method of high-brightness light emitting diode having reflective layer |
| DE102005035722B9 (de) | 2005-07-29 | 2021-11-18 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung |
| EP1750310A3 (en) | 2005-08-03 | 2009-07-15 | Samsung Electro-Mechanics Co., Ltd. | Omni-directional reflector and light emitting diode adopting the same |
| DE102005061346A1 (de) * | 2005-09-30 | 2007-04-05 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
| JP2007273975A (ja) * | 2006-03-10 | 2007-10-18 | Matsushita Electric Works Ltd | 発光素子 |
| DE102007002416A1 (de) * | 2006-04-13 | 2007-10-18 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Körper und Verfahren zur Herstellung eines strahlungsemittierenden Körpers |
| DE102007029370A1 (de) * | 2007-05-04 | 2008-11-06 | Osram Opto Semiconductors Gmbh | Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips |
| DE102007035687A1 (de) * | 2007-07-30 | 2009-02-05 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement mit einem Schichtenstapel |
| US20090104733A1 (en) * | 2007-10-22 | 2009-04-23 | Yong Kee Chae | Microcrystalline silicon deposition for thin film solar applications |
| DE102008024517A1 (de) * | 2007-12-27 | 2009-07-02 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Körper und Verfahren zur Herstellung eines strahlungsemittierenden Körpers |
-
2008
- 2008-06-06 DE DE102008027045A patent/DE102008027045A1/de not_active Withdrawn
-
2009
- 2009-02-11 EP EP09714695.5A patent/EP2248191B1/de active Active
- 2009-02-11 US US12/920,311 patent/US8772804B2/en active Active
- 2009-02-11 CN CN200980107062.XA patent/CN101960623B/zh active Active
- 2009-02-11 KR KR1020107019171A patent/KR101645738B1/ko active Active
- 2009-02-11 WO PCT/DE2009/000192 patent/WO2009106038A1/de not_active Ceased
- 2009-02-11 KR KR1020167014288A patent/KR101935642B1/ko active Active
- 2009-02-11 JP JP2010547944A patent/JP2011513955A/ja active Pending
- 2009-02-25 TW TW098105936A patent/TWI394297B/zh not_active IP Right Cessation
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6849165B2 (en) * | 2000-05-12 | 2005-02-01 | Unaxis Deutschland Gmbh | Indium-tin oxide (ITO) layer and method for producing the same |
| US20060249736A1 (en) * | 2005-05-03 | 2006-11-09 | Samsung Electro-Mechanics Co., Ltd. | Nitride semiconductor light emitting device and method of manufacturing the same |
| TW200721549A (en) * | 2005-09-29 | 2007-06-01 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor chip |
| WO2007105626A1 (ja) * | 2006-03-10 | 2007-09-20 | Matsushita Electric Works, Ltd. | 発光素子 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101935642B1 (ko) | 2019-01-04 |
| EP2248191B1 (de) | 2018-08-15 |
| CN101960623B (zh) | 2014-08-06 |
| US8772804B2 (en) | 2014-07-08 |
| JP2011513955A (ja) | 2011-04-28 |
| EP2248191A1 (de) | 2010-11-10 |
| TW200945635A (en) | 2009-11-01 |
| CN101960623A (zh) | 2011-01-26 |
| KR20160075765A (ko) | 2016-06-29 |
| DE102008027045A1 (de) | 2009-09-03 |
| WO2009106038A1 (de) | 2009-09-03 |
| KR20100126332A (ko) | 2010-12-01 |
| KR101645738B1 (ko) | 2016-08-04 |
| US20110198640A1 (en) | 2011-08-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |