JP2011513955A - 半導体発光ダイオードおよび半導体発光ダイオードの製造方法 - Google Patents

半導体発光ダイオードおよび半導体発光ダイオードの製造方法 Download PDF

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Publication number
JP2011513955A
JP2011513955A JP2010547944A JP2010547944A JP2011513955A JP 2011513955 A JP2011513955 A JP 2011513955A JP 2010547944 A JP2010547944 A JP 2010547944A JP 2010547944 A JP2010547944 A JP 2010547944A JP 2011513955 A JP2011513955 A JP 2011513955A
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Japan
Prior art keywords
layer
emitting diode
light emitting
type doped
oxide
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Pending
Application number
JP2010547944A
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English (en)
Japanese (ja)
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JP2011513955A5 (enExample
Inventor
マグナス アールシュテット
ヨハネス バウアー
ウルリッヒ ツェンダー
マルチン ストラスバーク
マティアス サバシル
ベルトホールド ハーン
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of JP2011513955A publication Critical patent/JP2011513955A/ja
Publication of JP2011513955A5 publication Critical patent/JP2011513955A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
JP2010547944A 2008-02-29 2009-02-11 半導体発光ダイオードおよび半導体発光ダイオードの製造方法 Pending JP2011513955A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102008011847 2008-02-29
DE102008027045A DE102008027045A1 (de) 2008-02-29 2008-06-06 Halbleiterleuchtdiode und Verfahren zur Herstellung einer Halbleiterleuchtdiode
PCT/DE2009/000192 WO2009106038A1 (de) 2008-02-29 2009-02-11 Halbleiterleuchtdiode und verfahren zur herstellung einer halbleiterleuchtdiode

Publications (2)

Publication Number Publication Date
JP2011513955A true JP2011513955A (ja) 2011-04-28
JP2011513955A5 JP2011513955A5 (enExample) 2012-03-22

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ID=40911446

Family Applications (1)

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JP2010547944A Pending JP2011513955A (ja) 2008-02-29 2009-02-11 半導体発光ダイオードおよび半導体発光ダイオードの製造方法

Country Status (8)

Country Link
US (1) US8772804B2 (enExample)
EP (1) EP2248191B1 (enExample)
JP (1) JP2011513955A (enExample)
KR (2) KR101645738B1 (enExample)
CN (1) CN101960623B (enExample)
DE (1) DE102008027045A1 (enExample)
TW (1) TWI394297B (enExample)
WO (1) WO2009106038A1 (enExample)

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* Cited by examiner, † Cited by third party
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CN102194947B (zh) * 2010-03-17 2015-11-25 Lg伊诺特有限公司 发光器件和发光器件封装
US9373765B2 (en) 2011-05-25 2016-06-21 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor chip
TW201322489A (zh) * 2011-11-29 2013-06-01 Genesis Photonics Inc 發光二極體元件及覆晶式發光二極體封裝元件
CN108054261A (zh) * 2012-02-14 2018-05-18 晶元光电股份有限公司 具有平整表面的电流扩散层的发光元件
DE102012106998A1 (de) * 2012-07-31 2014-02-06 Osram Opto Semiconductors Gmbh Reflektierendes Kontaktschichtsystem für ein optoelektronisches Bauelement und Verfahren zu dessen Herstellung
DE102015102454A1 (de) 2015-02-20 2016-08-25 Osram Opto Semiconductors Gmbh Verfahren zur Strukturierung einer Nitridschicht, strukturierte Dielektrikumschicht, optoelektronisches Bauelement, Ätzverfahren zum Ätzen von Schichten und Umgebungssensor
DE102015108875B4 (de) * 2015-06-04 2016-12-15 Otto-Von-Guericke-Universität Magdeburg Bauelement mit einer transparenten leitfähigen Nitridschicht
KR102519668B1 (ko) 2016-06-21 2023-04-07 삼성전자주식회사 반도체 발광 소자 및 그 제조 방법
KR102476139B1 (ko) 2016-08-03 2022-12-09 삼성전자주식회사 반도체 발광소자
KR102543183B1 (ko) 2018-01-26 2023-06-14 삼성전자주식회사 반도체 발광소자

Citations (3)

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JP2003532997A (ja) * 2000-05-12 2003-11-05 ウンアクシス ドイチェランド ゲーエムベーハー インジウム−スズ酸化物（ｉｔｏ）フィルム及びその製造方法
JP2006313888A (ja) * 2005-05-03 2006-11-16 Samsung Electro Mech Co Ltd 窒化物系半導体発光素子及びその製造方法
JP2007273975A (ja) * 2006-03-10 2007-10-18 Matsushita Electric Works Ltd 発光素子

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US6876003B1 (en) * 1999-04-15 2005-04-05 Sumitomo Electric Industries, Ltd. Semiconductor light-emitting device, method of manufacturing transparent conductor film and method of manufacturing compound semiconductor light-emitting device
JP2001009583A (ja) * 1999-06-29 2001-01-16 Canon Inc レーザ加工装置
US6784462B2 (en) 2001-12-13 2004-08-31 Rensselaer Polytechnic Institute Light-emitting diode with planar omni-directional reflector
ATE445233T1 (de) 2002-01-28 2009-10-15 Nichia Corp Nitrid-halbleiterbauelement mit einem trägersubstrat und verfahren zu seiner herstellung
US7041529B2 (en) * 2002-10-23 2006-05-09 Shin-Etsu Handotai Co., Ltd. Light-emitting device and method of fabricating the same
JP4174581B2 (ja) * 2002-10-23 2008-11-05 信越半導体株式会社 発光素子の製造方法
KR20050051920A (ko) * 2003-11-28 2005-06-02 삼성전자주식회사 플립칩형 질화물계 발광소자 및 그 제조방법
US20050236630A1 (en) * 2004-04-23 2005-10-27 Wang-Nang Wang Transparent contact for light emitting diode
DE102005013894B4 (de) * 2004-06-30 2010-06-17 Osram Opto Semiconductors Gmbh Elektromagnetische Strahlung erzeugender Halbleiterchip und Verfahren zu dessen Herstellung
DE102004050891B4 (de) * 2004-10-19 2019-01-10 Lumileds Holding B.V. Lichtmittierende III-Nitrid-Halbleitervorrichtung
KR101139891B1 (ko) 2005-01-31 2012-04-27 렌슬러 폴리테크닉 인스티튜트 확산 반사면을 구비한 발광 다이오드 소자
US7384808B2 (en) 2005-07-12 2008-06-10 Visual Photonics Epitaxy Co., Ltd. Fabrication method of high-brightness light emitting diode having reflective layer
DE102005035722B9 (de) 2005-07-29 2021-11-18 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung
EP1750310A3 (en) 2005-08-03 2009-07-15 Samsung Electro-Mechanics Co., Ltd. Omni-directional reflector and light emitting diode adopting the same
DE102006023685A1 (de) 2005-09-29 2007-04-05 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
DE102005061346A1 (de) * 2005-09-30 2007-04-05 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
CN101395728B (zh) * 2006-03-10 2011-04-13 松下电工株式会社 发光元件及其制造方法
DE102007002416A1 (de) * 2006-04-13 2007-10-18 Osram Opto Semiconductors Gmbh Strahlungsemittierender Körper und Verfahren zur Herstellung eines strahlungsemittierenden Körpers
DE102007029370A1 (de) * 2007-05-04 2008-11-06 Osram Opto Semiconductors Gmbh Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips
DE102007035687A1 (de) * 2007-07-30 2009-02-05 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit einem Schichtenstapel
US20090104733A1 (en) * 2007-10-22 2009-04-23 Yong Kee Chae Microcrystalline silicon deposition for thin film solar applications
DE102008024517A1 (de) * 2007-12-27 2009-07-02 Osram Opto Semiconductors Gmbh Strahlungsemittierender Körper und Verfahren zur Herstellung eines strahlungsemittierenden Körpers

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003532997A (ja) * 2000-05-12 2003-11-05 ウンアクシス ドイチェランド ゲーエムベーハー インジウム−スズ酸化物（ｉｔｏ）フィルム及びその製造方法
JP2006313888A (ja) * 2005-05-03 2006-11-16 Samsung Electro Mech Co Ltd 窒化物系半導体発光素子及びその製造方法
JP2007273975A (ja) * 2006-03-10 2007-10-18 Matsushita Electric Works Ltd 発光素子

Also Published As

Publication number Publication date
TWI394297B (zh) 2013-04-21
KR101935642B1 (ko) 2019-01-04
EP2248191B1 (de) 2018-08-15
CN101960623B (zh) 2014-08-06
US8772804B2 (en) 2014-07-08
EP2248191A1 (de) 2010-11-10
TW200945635A (en) 2009-11-01
CN101960623A (zh) 2011-01-26
KR20160075765A (ko) 2016-06-29
DE102008027045A1 (de) 2009-09-03
WO2009106038A1 (de) 2009-09-03
KR20100126332A (ko) 2010-12-01
KR101645738B1 (ko) 2016-08-04
US20110198640A1 (en) 2011-08-18

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