JP2013168620A5 - - Google Patents

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Publication number
JP2013168620A5
JP2013168620A5 JP2012032635A JP2012032635A JP2013168620A5 JP 2013168620 A5 JP2013168620 A5 JP 2013168620A5 JP 2012032635 A JP2012032635 A JP 2012032635A JP 2012032635 A JP2012032635 A JP 2012032635A JP 2013168620 A5 JP2013168620 A5 JP 2013168620A5
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Japan
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JP2012032635A
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English (en)
Japanese (ja)
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JP2013168620A (ja
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Priority to JP2012032635A priority Critical patent/JP2013168620A/ja
Priority claimed from JP2012032635A external-priority patent/JP2013168620A/ja
Priority to US13/597,305 priority patent/US8551797B2/en
Priority to CN201210561002.9A priority patent/CN103259192B/zh
Publication of JP2013168620A publication Critical patent/JP2013168620A/ja
Publication of JP2013168620A5 publication Critical patent/JP2013168620A5/ja
Pending legal-status Critical Current

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JP2012032635A 2012-02-17 2012-02-17 半導体レーザの製造方法 Pending JP2013168620A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2012032635A JP2013168620A (ja) 2012-02-17 2012-02-17 半導体レーザの製造方法
US13/597,305 US8551797B2 (en) 2012-02-17 2012-08-29 Method for fabricating semiconductor laser
CN201210561002.9A CN103259192B (zh) 2012-02-17 2012-12-21 半导体激光器的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012032635A JP2013168620A (ja) 2012-02-17 2012-02-17 半導体レーザの製造方法

Publications (2)

Publication Number Publication Date
JP2013168620A JP2013168620A (ja) 2013-08-29
JP2013168620A5 true JP2013168620A5 (enExample) 2015-02-19

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ID=48962971

Family Applications (1)

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JP2012032635A Pending JP2013168620A (ja) 2012-02-17 2012-02-17 半導体レーザの製造方法

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US (1) US8551797B2 (enExample)
JP (1) JP2013168620A (enExample)
CN (1) CN103259192B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10396241B1 (en) 2016-08-04 2019-08-27 Apple Inc. Diffusion revealed blocking junction
CN112640233B (zh) * 2018-09-12 2022-03-01 三菱电机株式会社 半导体激光器
CN110086080B (zh) * 2019-04-12 2020-04-10 苏州长光华芯光电技术有限公司 半导体激光器非吸收窗口及其制备方法和半导体激光器
CN112825415A (zh) * 2019-11-21 2021-05-21 深圳市中光工业技术研究院 激光器芯片制备方法和激光器
JP7170939B1 (ja) * 2021-12-01 2022-11-14 三菱電機株式会社 半導体装置の製造方法および半導体装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59171186A (ja) * 1982-11-12 1984-09-27 Fujitsu Ltd 半導体発光装置
JPS6132545A (ja) 1984-07-25 1986-02-15 Matsushita Electric Ind Co Ltd 半導体集積回路の製造方法
JPH06112588A (ja) * 1992-09-24 1994-04-22 Olympus Optical Co Ltd 光半導体素子
US5376582A (en) 1993-10-15 1994-12-27 International Business Machines Corporation Planar, topology-free, single-mode, high-power semiconductor quantum-well laser with non-absorbing mirrors and current confinement
JP3387076B2 (ja) * 1997-01-07 2003-03-17 住友電気工業株式会社 半導体レーザ及びその製造方法
JP2001230491A (ja) * 2000-02-15 2001-08-24 Sharp Corp 半導体レーザ素子及びその製造方法
JP2002353563A (ja) * 2001-05-24 2002-12-06 Rohm Co Ltd 半導体発光素子およびその製法
JP3741062B2 (ja) * 2001-06-12 2006-02-01 三菱電機株式会社 半導体装置の製造方法
EP1699121B1 (en) * 2003-12-15 2014-04-30 The Furukawa Electric Co., Ltd. Semiconductor device manufacturing method
US20060165143A1 (en) * 2005-01-24 2006-07-27 Matsushita Electric Industrial Co., Ltd. Nitride semiconductor laser device and manufacturing method thereof
JP5116960B2 (ja) * 2005-09-27 2013-01-09 古河電気工業株式会社 面発光レーザ素子およびレーザアレイ
JP2007242718A (ja) 2006-03-06 2007-09-20 Furukawa Electric Co Ltd:The 半導体レーザ素子および半導体レーザ素子の製造方法
JP2008235790A (ja) * 2007-03-23 2008-10-02 Mitsubishi Electric Corp 半導体光素子の製造方法
US7682857B2 (en) * 2007-04-16 2010-03-23 Mitsubishi Electric Corporation Method for manufacturing semiconductor optical device
CN103199437B (zh) 2009-07-06 2015-07-22 古河电气工业株式会社 半导体光学器件的制造方法、半导体光学激光元件的制造方法以及半导体光学器件
JP4748545B2 (ja) 2009-07-06 2011-08-17 古河電気工業株式会社 半導体光デバイスの製造方法および半導体光デバイス
US8446927B2 (en) * 2011-01-27 2013-05-21 Rohm Co., Ltd. Semiconductor laser device and manufacturing method thereof

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