JP2009283822A5 - - Google Patents
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- Publication number
- JP2009283822A5 JP2009283822A5 JP2008136513A JP2008136513A JP2009283822A5 JP 2009283822 A5 JP2009283822 A5 JP 2009283822A5 JP 2008136513 A JP2008136513 A JP 2008136513A JP 2008136513 A JP2008136513 A JP 2008136513A JP 2009283822 A5 JP2009283822 A5 JP 2009283822A5
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- Prior art keywords
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- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 5
- 229910000673 Indium arsenide Inorganic materials 0.000 claims 3
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 3
- 238000005253 cladding Methods 0.000 claims 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008136513A JP2009283822A (ja) | 2008-05-26 | 2008-05-26 | 半導体レーザ及びその製造方法 |
| US12/198,152 US7835413B2 (en) | 2008-05-26 | 2008-08-26 | Semiconductor laser |
| CN2009100027060A CN101593930B (zh) | 2008-05-26 | 2009-01-19 | 半导体激光器及其制造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008136513A JP2009283822A (ja) | 2008-05-26 | 2008-05-26 | 半導体レーザ及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009283822A JP2009283822A (ja) | 2009-12-03 |
| JP2009283822A5 true JP2009283822A5 (enExample) | 2011-04-14 |
Family
ID=41342086
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008136513A Pending JP2009283822A (ja) | 2008-05-26 | 2008-05-26 | 半導体レーザ及びその製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7835413B2 (enExample) |
| JP (1) | JP2009283822A (enExample) |
| CN (1) | CN101593930B (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5489702B2 (ja) * | 2009-12-24 | 2014-05-14 | 三菱電機株式会社 | 半導体光素子および集積型半導体光素子 |
| CN101888060B (zh) * | 2010-06-02 | 2011-10-19 | 中国科学院半导体研究所 | 异质掩埋激光器的制作方法 |
| JP5697907B2 (ja) * | 2010-06-25 | 2015-04-08 | シャープ株式会社 | 窒化物半導体レーザ素子およびその製造方法 |
| US9368939B2 (en) | 2013-10-18 | 2016-06-14 | Soraa Laser Diode, Inc. | Manufacturable laser diode formed on C-plane gallium and nitrogen material |
| US9520695B2 (en) * | 2013-10-18 | 2016-12-13 | Soraa Laser Diode, Inc. | Gallium and nitrogen containing laser device having confinement region |
| US9520697B2 (en) | 2014-02-10 | 2016-12-13 | Soraa Laser Diode, Inc. | Manufacturable multi-emitter laser diode |
| US9871350B2 (en) | 2014-02-10 | 2018-01-16 | Soraa Laser Diode, Inc. | Manufacturable RGB laser diode source |
| JP6375960B2 (ja) * | 2015-01-20 | 2018-08-22 | 三菱電機株式会社 | 光半導体装置 |
| CN107046227B (zh) * | 2017-05-16 | 2019-11-22 | 厦门市芯诺通讯科技有限公司 | 一种bcb掩埋高速dfb半导体激光器的制备方法 |
| CN107154580B (zh) * | 2017-06-12 | 2019-06-07 | 陕西源杰半导体技术有限公司 | 一种小发散角激光器及其制备工艺 |
| CN110176507B (zh) * | 2019-05-31 | 2020-08-14 | 厦门市三安集成电路有限公司 | 一种台面pin的钝化结构和光电二极管及其制备方法 |
| JP7306779B2 (ja) * | 2019-09-13 | 2023-07-11 | 住友電工デバイス・イノベーション株式会社 | 光半導体素子およびその製造方法 |
| US12489274B2 (en) * | 2020-01-22 | 2025-12-02 | Mitsubishi Electric Corporation | Semiconductor device and method for manufacturing semiconductor device |
| JP6942261B1 (ja) * | 2020-01-28 | 2021-09-29 | 三菱電機株式会社 | 光半導体装置の製造方法 |
| JP7330128B2 (ja) * | 2020-04-02 | 2023-08-21 | 浜松ホトニクス株式会社 | 量子カスケードレーザ素子及び量子カスケードレーザ装置 |
| JP7421989B2 (ja) * | 2020-04-02 | 2024-01-25 | 浜松ホトニクス株式会社 | 量子カスケードレーザ素子及び量子カスケードレーザ装置 |
| US12191626B1 (en) | 2020-07-31 | 2025-01-07 | Kyocera Sld Laser, Inc. | Vertically emitting laser devices and chip-scale-package laser devices and laser-based, white light emitting devices |
| KR20240004977A (ko) * | 2021-06-17 | 2024-01-11 | 미쓰비시덴키 가부시키가이샤 | 광반도체 소자 및 그 제조 방법 |
| US20240413613A1 (en) * | 2021-11-30 | 2024-12-12 | Mitsubishi Electric Corporation | Semiconductor laser and method for producing semiconductor laser |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0513882A (ja) | 1990-11-16 | 1993-01-22 | Furukawa Electric Co Ltd:The | ワイドバンドギヤツプ材料をｐｎ電流阻止層に用いた半導体光素子 |
| JPH0548210A (ja) * | 1991-08-09 | 1993-02-26 | Mitsubishi Electric Corp | 半導体レーザ装置 |
| JP2980435B2 (ja) | 1991-09-12 | 1999-11-22 | 株式会社東芝 | 半導体装置 |
| JPH0722691A (ja) | 1993-06-30 | 1995-01-24 | Mitsubishi Electric Corp | 半導体レーザとその製造方法 |
| JP2699888B2 (ja) | 1994-09-20 | 1998-01-19 | 日本電気株式会社 | 埋め込み型ｐ型基板半導体レーザ |
| JP3386261B2 (ja) | 1994-12-05 | 2003-03-17 | 三菱電機株式会社 | 光半導体装置、及びその製造方法 |
| JP3360962B2 (ja) | 1995-03-15 | 2003-01-07 | 株式会社東芝 | 半導体レーザ |
| JP2776375B2 (ja) | 1996-06-20 | 1998-07-16 | 日本電気株式会社 | 半導体レーザ |
| US6664605B1 (en) * | 2000-03-31 | 2003-12-16 | Triquint Technology Holding Co. | Dopant diffusion blocking for optoelectronic devices using InAlAs and/or InGaAlAs |
| JP2003060311A (ja) * | 2001-08-21 | 2003-02-28 | Nippon Telegr & Teleph Corp <Ntt> | 半導体光素子及びその製造方法 |
| EP1300917A1 (en) * | 2001-10-03 | 2003-04-09 | Agilent Technologies, Inc. (a Delaware corporation) | Semiconductor device with current confinement structure |
| US20050141578A1 (en) * | 2003-06-20 | 2005-06-30 | Benoit Reid | Laser diode structure with blocking layer |
| JP4792854B2 (ja) | 2005-07-25 | 2011-10-12 | 三菱電機株式会社 | 半導体光素子及びその製造方法 |
| JP2008053649A (ja) | 2006-08-28 | 2008-03-06 | Mitsubishi Electric Corp | 埋め込み型半導体レーザ |
-
2008
- 2008-05-26 JP JP2008136513A patent/JP2009283822A/ja active Pending
- 2008-08-26 US US12/198,152 patent/US7835413B2/en not_active Expired - Fee Related
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2009
- 2009-01-19 CN CN2009100027060A patent/CN101593930B/zh not_active Expired - Fee Related