JP2014514746A5 - - Google Patents

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JP2014514746A5
JP2014514746A5 JP2014501067A JP2014501067A JP2014514746A5 JP 2014514746 A5 JP2014514746 A5 JP 2014514746A5 JP 2014501067 A JP2014501067 A JP 2014501067A JP 2014501067 A JP2014501067 A JP 2014501067A JP 2014514746 A5 JP2014514746 A5 JP 2014514746A5
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semiconductor device
base
region
emitter
subcell
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JP2014501067A
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JP2014514746A (ja
JP6259393B2 (ja
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JP2014501067A 2011-03-22 2012-01-31 電流生成が向上した半導体デバイス Active JP6259393B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/069,274 2011-03-22
US13/069,274 US10170652B2 (en) 2011-03-22 2011-03-22 Metamorphic solar cell having improved current generation
PCT/US2012/023379 WO2012128848A1 (en) 2011-03-22 2012-01-31 Metamorphic solar cell having improved current generation

Related Child Applications (1)

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JP2017172785A Division JP6650916B2 (ja) 2011-03-22 2017-09-08 電流生成が向上した半導体デバイス

Publications (3)

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JP2014514746A JP2014514746A (ja) 2014-06-19
JP2014514746A5 true JP2014514746A5 (enExample) 2015-03-19
JP6259393B2 JP6259393B2 (ja) 2018-01-10

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JP2014501067A Active JP6259393B2 (ja) 2011-03-22 2012-01-31 電流生成が向上した半導体デバイス
JP2017172785A Active JP6650916B2 (ja) 2011-03-22 2017-09-08 電流生成が向上した半導体デバイス

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US (1) US10170652B2 (enExample)
EP (2) EP3444848A1 (enExample)
JP (2) JP6259393B2 (enExample)
TW (1) TWI666785B (enExample)
WO (1) WO2012128848A1 (enExample)

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