JP2019216249A5 - - Google Patents
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- Publication number
- JP2019216249A5 JP2019216249A5 JP2019137470A JP2019137470A JP2019216249A5 JP 2019216249 A5 JP2019216249 A5 JP 2019216249A5 JP 2019137470 A JP2019137470 A JP 2019137470A JP 2019137470 A JP2019137470 A JP 2019137470A JP 2019216249 A5 JP2019216249 A5 JP 2019216249A5
- Authority
- JP
- Japan
- Prior art keywords
- cell
- gallium arsenide
- photovoltaic device
- silicon germanium
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims 13
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 13
- 239000000758 substrate Substances 0.000 claims 8
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims 5
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims 5
- KAJBHOLJPAFYGK-UHFFFAOYSA-N [Sn].[Ge].[Si] Chemical compound [Sn].[Ge].[Si] KAJBHOLJPAFYGK-UHFFFAOYSA-N 0.000 claims 5
- 238000000034 method Methods 0.000 claims 5
- 239000004065 semiconductor Substances 0.000 claims 3
- 229910005540 GaP Inorganic materials 0.000 claims 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims 2
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 claims 2
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 claims 2
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims 2
- 229910052738 indium Inorganic materials 0.000 claims 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- IWTIUUVUEKAHRM-UHFFFAOYSA-N germanium tin Chemical compound [Ge].[Sn] IWTIUUVUEKAHRM-UHFFFAOYSA-N 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000002210 silicon-based material Substances 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161528650P | 2011-08-29 | 2011-08-29 | |
| US61/528,650 | 2011-08-29 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017198245A Division JP2018026580A (ja) | 2011-08-29 | 2017-10-12 | 光起電デバイス |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2019216249A JP2019216249A (ja) | 2019-12-19 |
| JP2019216249A5 true JP2019216249A5 (enExample) | 2020-02-06 |
Family
ID=46727255
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014527730A Expired - Fee Related JP6228119B2 (ja) | 2011-08-29 | 2012-08-14 | 光起電デバイス |
| JP2017198245A Pending JP2018026580A (ja) | 2011-08-29 | 2017-10-12 | 光起電デバイス |
| JP2019137470A Pending JP2019216249A (ja) | 2011-08-29 | 2019-07-26 | 光起電デバイス |
Family Applications Before (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014527730A Expired - Fee Related JP6228119B2 (ja) | 2011-08-29 | 2012-08-14 | 光起電デバイス |
| JP2017198245A Pending JP2018026580A (ja) | 2011-08-29 | 2017-10-12 | 光起電デバイス |
Country Status (7)
| Country | Link |
|---|---|
| US (4) | US10263129B2 (enExample) |
| EP (3) | EP2745329B1 (enExample) |
| JP (3) | JP6228119B2 (enExample) |
| CN (2) | CN107845690B (enExample) |
| AU (2) | AU2012300694C1 (enExample) |
| ES (1) | ES2813938T3 (enExample) |
| WO (3) | WO2013030530A1 (enExample) |
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| US9985160B2 (en) * | 2012-09-14 | 2018-05-29 | The Boeing Company | Group-IV solar cell structure using group-IV or III-V heterostructures |
| US11495705B2 (en) | 2012-09-14 | 2022-11-08 | The Boeing Company | Group-IV solar cell structure using group-IV or III-V heterostructures |
| US11646388B2 (en) | 2012-09-14 | 2023-05-09 | The Boeing Company | Group-IV solar cell structure using group-IV or III-V heterostructures |
| US9997659B2 (en) | 2012-09-14 | 2018-06-12 | The Boeing Company | Group-IV solar cell structure using group-IV or III-V heterostructures |
| KR20140095738A (ko) * | 2013-01-25 | 2014-08-04 | 삼성전자주식회사 | 트랜지스터 및 그 제조 방법 |
| CN103199130B (zh) * | 2013-03-15 | 2016-03-09 | 中国科学院苏州纳米技术与纳米仿生研究所 | 正装四结太阳电池及其制备方法 |
| CN103137766B (zh) * | 2013-03-15 | 2015-09-09 | 中国科学院苏州纳米技术与纳米仿生研究所 | 三结级联太阳电池及其制备方法 |
| CN103199141A (zh) * | 2013-03-15 | 2013-07-10 | 中国科学院苏州纳米技术与纳米仿生研究所 | 四结级联太阳能电池及其制备方法 |
| EP2782145A1 (fr) * | 2013-03-21 | 2014-09-24 | Alcatel Lucent | Procédé de fabrication d'un dispositif photovoltaïque multi-jonctions et dispositif photovoltaïque multi-jonctions ainsi obtenu |
| CN103219412B (zh) * | 2013-04-03 | 2016-03-09 | 中国科学院苏州纳米技术与纳米仿生研究所 | 三结级联太阳电池及其制备方法 |
| CN103151414B (zh) * | 2013-04-03 | 2016-04-27 | 中国科学院苏州纳米技术与纳米仿生研究所 | 正装三结级联太阳电池及其制备方法 |
| CN103259193B (zh) * | 2013-05-14 | 2016-03-09 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种1300nm~1550nm含铋化物的半导体激光器的制备方法 |
| CN103311353B (zh) * | 2013-05-29 | 2016-09-07 | 中国科学院苏州纳米技术与纳米仿生研究所 | 三结级联太阳能电池及其制备方法 |
| GB2515322A (en) * | 2013-06-19 | 2014-12-24 | Univ Surrey | Light Receiving Device |
| US20140373906A1 (en) * | 2013-06-25 | 2014-12-25 | Solar Junction Corporation | Anti-reflection coatings for multijunction solar cells |
| CN103426965B (zh) * | 2013-08-16 | 2016-12-28 | 中国科学院苏州纳米技术与纳米仿生研究所 | 太阳能电池及其制作方法 |
| CN104638060B (zh) * | 2013-11-13 | 2018-03-06 | 中国电子科技集团公司第十八研究所 | 异质结热光伏电池的制备方法 |
| CN104638046B (zh) * | 2013-11-13 | 2017-05-03 | 中国电子科技集团公司第十八研究所 | Ge衬底异质结热光伏电池 |
| CN103839774A (zh) * | 2014-02-25 | 2014-06-04 | 清华大学 | SiGeSn层及其形成方法 |
| US9548408B2 (en) * | 2014-04-15 | 2017-01-17 | L-3 Communications Cincinnati Electronics Corporation | Tunneling barrier infrared detector devices |
| JP2016082041A (ja) * | 2014-10-15 | 2016-05-16 | 株式会社リコー | 化合物半導体太陽電池、及び、化合物半導体太陽電池の製造方法 |
| EP3408871A1 (en) * | 2016-01-29 | 2018-12-05 | Alta Devices, Inc. | Multi-junction optoelectronic device with group iv semiconductor as a bottom junction |
| CN105720126B (zh) * | 2016-04-27 | 2017-07-28 | 天津三安光电有限公司 | 一种倒装四结太阳能电池结构及其制备方法 |
| US20170365732A1 (en) | 2016-06-15 | 2017-12-21 | Solar Junction Corporation | Dilute nitride bismide semiconductor alloys |
| CN106531836A (zh) * | 2016-11-25 | 2017-03-22 | 罗雷 | 四结太阳能电池 |
| US10593818B2 (en) * | 2016-12-09 | 2020-03-17 | The Boeing Company | Multijunction solar cell having patterned emitter and method of making the solar cell |
| CN108807284B (zh) * | 2017-04-28 | 2020-06-26 | 环球晶圆股份有限公司 | 一种外延接合基板及其制造方法 |
| US11342498B2 (en) * | 2018-01-08 | 2022-05-24 | Integrated Silicon Solution (cayman) Inc. | High density 3D magnetic random access memory (MRAM) cell integration using wafer cut and transfer |
| CN111477677B (zh) * | 2020-05-27 | 2024-12-06 | 北京时代全芯存储技术股份有限公司 | 二极管结构及其制造方法 |
| CN113066907B (zh) * | 2021-06-03 | 2021-08-27 | 南昌凯迅光电有限公司 | 一种纳米网状表面电极的三结砷化镓太阳电池的制备方法 |
| EP4459682A1 (en) | 2023-05-03 | 2024-11-06 | Valstybinis moksliniu tyrimu institutas Fiziniu ir technologijos mokslu centras | Method for making multijunction photovoltaic device comprising a gaasbi subcell |
| CN118658918B (zh) * | 2024-07-19 | 2025-11-04 | 江苏仲磊芯半导体有限公司 | 一种四结太阳能电池及其制作方法 |
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| JPS63503103A (ja) * | 1985-09-30 | 1988-11-10 | 鐘淵化学工業株式会社 | マルチジャンクション型半導体デバイス |
| JPS6437060A (en) * | 1987-08-03 | 1989-02-07 | Nippon Telegraph & Telephone | Semiconductor element |
| US6281426B1 (en) * | 1997-10-01 | 2001-08-28 | Midwest Research Institute | Multi-junction, monolithic solar cell using low-band-gap materials lattice matched to GaAs or Ge |
| US5944913A (en) * | 1997-11-26 | 1999-08-31 | Sandia Corporation | High-efficiency solar cell and method for fabrication |
| US6380601B1 (en) | 1999-03-29 | 2002-04-30 | Hughes Electronics Corporation | Multilayer semiconductor structure with phosphide-passivated germanium substrate |
| JP3657143B2 (ja) * | 1999-04-27 | 2005-06-08 | シャープ株式会社 | 太陽電池及びその製造方法 |
| US6252287B1 (en) * | 1999-05-19 | 2001-06-26 | Sandia Corporation | InGaAsN/GaAs heterojunction for multi-junction solar cells |
| US6340788B1 (en) * | 1999-12-02 | 2002-01-22 | Hughes Electronics Corporation | Multijunction photovoltaic cells and panels using a silicon or silicon-germanium active substrate cell for space and terrestrial applications |
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| JP2002222989A (ja) * | 2001-01-26 | 2002-08-09 | Toshiba Corp | 半導体発光素子 |
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| CA2551123A1 (en) * | 2004-01-20 | 2005-07-28 | Cyrium Technologies Incorporated | Solar cell with epitaxially grown quantum dot material |
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| US7872252B2 (en) * | 2006-08-11 | 2011-01-18 | Cyrium Technologies Incorporated | Method of fabricating semiconductor devices on a group IV substrate with controlled interface properties and diffusion tails |
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| WO2009009111A2 (en) | 2007-07-10 | 2009-01-15 | The Board Of Trustees Of The Leland Stanford Junior University | GaInNAsSB SOLAR CELLS GROWN BY MOLECULAR BEAM EPITAXY |
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| CN101431117A (zh) * | 2008-11-24 | 2009-05-13 | 北京索拉安吉清洁能源科技有限公司 | 具有掺杂阻挡层的多结太阳电池 |
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| US20100282306A1 (en) * | 2009-05-08 | 2010-11-11 | Emcore Solar Power, Inc. | Multijunction Solar Cells with Group IV/III-V Hybrid Alloys |
| TW201114043A (en) | 2009-10-02 | 2011-04-16 | Epistar Corp | A high efficiency solar cell |
| US20110232730A1 (en) | 2010-03-29 | 2011-09-29 | Solar Junction Corp. | Lattice matchable alloy for solar cells |
| US9214580B2 (en) | 2010-10-28 | 2015-12-15 | Solar Junction Corporation | Multi-junction solar cell with dilute nitride sub-cell having graded doping |
| WO2013074530A2 (en) * | 2011-11-15 | 2013-05-23 | Solar Junction Corporation | High efficiency multijunction solar cells |
-
2012
- 2012-08-14 US US14/342,061 patent/US10263129B2/en active Active
- 2012-08-14 EP EP12750801.8A patent/EP2745329B1/en not_active Not-in-force
- 2012-08-14 EP EP12753571.4A patent/EP2745330B1/en active Active
- 2012-08-14 ES ES12753571T patent/ES2813938T3/es active Active
- 2012-08-14 US US14/241,987 patent/US20150041863A1/en not_active Abandoned
- 2012-08-14 EP EP12750800.0A patent/EP2745328A1/en not_active Ceased
- 2012-08-14 JP JP2014527730A patent/JP6228119B2/ja not_active Expired - Fee Related
- 2012-08-14 WO PCT/GB2012/051981 patent/WO2013030530A1/en not_active Ceased
- 2012-08-14 AU AU2012300694A patent/AU2012300694C1/en not_active Ceased
- 2012-08-14 CN CN201711071248.7A patent/CN107845690B/zh not_active Expired - Fee Related
- 2012-08-14 WO PCT/GB2012/051980 patent/WO2013030529A1/en not_active Ceased
- 2012-08-14 US US14/342,016 patent/US20140345679A1/en not_active Abandoned
- 2012-08-14 WO PCT/GB2012/051982 patent/WO2013030531A1/en not_active Ceased
- 2012-08-14 CN CN201280049676.9A patent/CN103875079B/zh not_active Expired - Fee Related
-
2016
- 2016-01-19 AU AU2016200282A patent/AU2016200282B2/en not_active Ceased
- 2016-12-16 US US15/382,181 patent/US10367107B2/en active Active
-
2017
- 2017-10-12 JP JP2017198245A patent/JP2018026580A/ja active Pending
-
2019
- 2019-07-26 JP JP2019137470A patent/JP2019216249A/ja active Pending
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