EP3408871A1 - Multi-junction optoelectronic device with group iv semiconductor as a bottom junction - Google Patents
Multi-junction optoelectronic device with group iv semiconductor as a bottom junctionInfo
- Publication number
- EP3408871A1 EP3408871A1 EP17703637.3A EP17703637A EP3408871A1 EP 3408871 A1 EP3408871 A1 EP 3408871A1 EP 17703637 A EP17703637 A EP 17703637A EP 3408871 A1 EP3408871 A1 EP 3408871A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- junction
- semiconductor
- optoelectronic device
- layer
- junction optoelectronic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 144
- 239000004065 semiconductor Substances 0.000 title claims abstract description 139
- 238000000034 method Methods 0.000 claims abstract description 88
- 239000000758 substrate Substances 0.000 claims abstract description 65
- 239000010410 layer Substances 0.000 claims description 197
- 239000000463 material Substances 0.000 claims description 94
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 77
- 230000008569 process Effects 0.000 claims description 45
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 229910045601 alloy Inorganic materials 0.000 claims description 14
- 239000000956 alloy Substances 0.000 claims description 14
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 238000005229 chemical vapour deposition Methods 0.000 claims description 9
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 8
- 229910052732 germanium Inorganic materials 0.000 claims description 7
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 claims description 7
- 238000005240 physical vapour deposition Methods 0.000 claims description 7
- 238000000231 atomic layer deposition Methods 0.000 claims description 6
- 229910052718 tin Inorganic materials 0.000 claims description 6
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 5
- 239000004593 Epoxy Substances 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 4
- 150000007513 acids Chemical class 0.000 claims description 4
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- 238000001451 molecular beam epitaxy Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 77
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 33
- 229910005540 GaP Inorganic materials 0.000 description 20
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 16
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 11
- 238000000151 deposition Methods 0.000 description 11
- 238000005137 deposition process Methods 0.000 description 9
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 5
- 238000013459 approach Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- -1 AIGaAs Inorganic materials 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
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- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
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- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
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- 230000008878 coupling Effects 0.000 description 2
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- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
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- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
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- 238000000926 separation method Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- HJUGFYREWKUQJT-UHFFFAOYSA-N tetrabromomethane Chemical compound BrC(Br)(Br)Br HJUGFYREWKUQJT-UHFFFAOYSA-N 0.000 description 2
- HTDIUWINAKAPER-UHFFFAOYSA-N trimethylarsine Chemical compound C[As](C)C HTDIUWINAKAPER-UHFFFAOYSA-N 0.000 description 2
- 238000005019 vapor deposition process Methods 0.000 description 2
- DIIIISSCIXVANO-UHFFFAOYSA-N 1,2-Dimethylhydrazine Chemical compound CNNC DIIIISSCIXVANO-UHFFFAOYSA-N 0.000 description 1
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910005898 GeSn Inorganic materials 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910020328 SiSn Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910000074 antimony hydride Inorganic materials 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
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- 229910052802 copper Inorganic materials 0.000 description 1
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- 238000013461 design Methods 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- JMMJWXHSCXIWRF-UHFFFAOYSA-N ethyl(dimethyl)indigane Chemical compound CC[In](C)C JMMJWXHSCXIWRF-UHFFFAOYSA-N 0.000 description 1
- KQTKYCXEDDECIZ-UHFFFAOYSA-N ethylarsenic Chemical compound CC[As] KQTKYCXEDDECIZ-UHFFFAOYSA-N 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 239000004811 fluoropolymer Substances 0.000 description 1
- 229910000078 germane Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910021480 group 4 element Inorganic materials 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- XCLKKWIIZMHQIV-UHFFFAOYSA-N isobutylgermane Chemical compound CC(C)C[Ge] XCLKKWIIZMHQIV-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- WJFZPDZHLPHPJO-UHFFFAOYSA-N methyl-di(propan-2-yl)indigane Chemical compound CC(C)[In](C)C(C)C WJFZPDZHLPHPJO-UHFFFAOYSA-N 0.000 description 1
- APOOHHZPEUGNQX-UHFFFAOYSA-N n-methyl-n-trichlorogermylmethanamine Chemical compound CN(C)[Ge](Cl)(Cl)Cl APOOHHZPEUGNQX-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000002674 ointment Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- HKOOXMFOFWEVGF-UHFFFAOYSA-N phenylhydrazine Chemical compound NNC1=CC=CC=C1 HKOOXMFOFWEVGF-UHFFFAOYSA-N 0.000 description 1
- 229940067157 phenylhydrazine Drugs 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
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- 238000005488 sandblasting Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
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- 238000007650 screen-printing Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004901 spalling Methods 0.000 description 1
- OUULRIDHGPHMNQ-UHFFFAOYSA-N stibane Chemical compound [SbH3] OUULRIDHGPHMNQ-UHFFFAOYSA-N 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- YBRBMKDOPFTVDT-UHFFFAOYSA-N tert-butylamine Chemical compound CC(C)(C)N YBRBMKDOPFTVDT-UHFFFAOYSA-N 0.000 description 1
- QTQRGDBFHFYIBH-UHFFFAOYSA-N tert-butylarsenic Chemical compound CC(C)(C)[As] QTQRGDBFHFYIBH-UHFFFAOYSA-N 0.000 description 1
- ZGNPLWZYVAFUNZ-UHFFFAOYSA-N tert-butylphosphane Chemical compound CC(C)(C)P ZGNPLWZYVAFUNZ-UHFFFAOYSA-N 0.000 description 1
- RBEXEKTWBGMBDZ-UHFFFAOYSA-N tri(propan-2-yl)stibane Chemical compound CC(C)[Sb](C(C)C)C(C)C RBEXEKTWBGMBDZ-UHFFFAOYSA-N 0.000 description 1
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 description 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 1
- OTRPZROOJRIMKW-UHFFFAOYSA-N triethylindigane Chemical compound CC[In](CC)CC OTRPZROOJRIMKW-UHFFFAOYSA-N 0.000 description 1
- KKOFCVMVBJXDFP-UHFFFAOYSA-N triethylstibane Chemical compound CC[Sb](CC)CC KKOFCVMVBJXDFP-UHFFFAOYSA-N 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- PORFVJURJXKREL-UHFFFAOYSA-N trimethylstibine Chemical compound C[Sb](C)C PORFVJURJXKREL-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0725—Multiple junction or tandem solar cells
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0687—Multiple junction or tandem solar cells
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
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- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
- H01L33/0016—Devices characterised by their operation having p-n or hi-lo junctions having at least two p-n junctions
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- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
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- H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
Definitions
- Figure 2 illustrates an example of a multi-junction optoelectronic device with a p-n structure comprising Group IV semiconductor as a bottom junction using GaAs as a substrate before the device is separated from the substrate, in accordance with various aspects of the disclosure.
- Figure 3 illustrates another example of a multi-junction optoelectronic device with a p-n structure comprising Group IV semiconductor as a bottom junction using GaAs as a substrate after the device is separated from the substrate, in accordance with various aspects of the disclosure.
- a layer can be described as being deposited "on or over" one or more other layers. This term indicates that the layer can be deposited directly on top of the other layer(s), or can indicate that one or more additional layers can be deposited between the layer and the other layer(s) in some embodiments or implementations. Also, the other layer(s) can be arranged in any order.
- the nth p-n junction can contain various arsenide, phosphide, and nitride layers, such as GaAs, AIGaAs, InGaAs, AllnGaAs, InGaAsP, AllnGaAsP, GaN, InGaN, alloys thereof, derivatives thereof and combinations thereof.
- each of these p-n junctions comprises a Group lll-V semiconductor and includes at least one of gallium, aluminum, indium, phosphorus, nitrogen, or arsenic.
- an interface or intermediate layer can be formed between an emitter layer and a base layer (e.g., between emitter and base layers in a p-n junction or a p-n structure).
- the intermediate layer can comprise any suitable Group lll-V compound semiconductor, such as GaAs, AIGaAs, InGaP, AllnGaP, InGaAsP, AllnGaAsP, AllnP, or a combination thereof.
- the intermediate layer can be n-doped, p-doped, or not intentionally doped.
- the thickness of the interface layer can be in the range of about 5 nm to about 200 nm, for example.
- the back side and/or the front side (e.g., the side closest to where light is received by a photovoltaic cell or emitted by an LED) of the p-n structure can be textured to improve light scattering into and/or out of the device.
- texturing can be more likely applied to the back side (e.g., back-side texturing), in which case that Group IV semiconductor materials are to be textured using one or more of the texturing techniques described above.
- a second p-n structure includes a first p-n junction 408, which may be referred to as the third p-n junction of the triple junction optoelectronic device 400, where the first p-n junction 408 includes a SiGe or SiGeSn absorber layer.
- the first p-n junction 408 of the second p-n structure may be coupled to the second p-n junction 406 of the first p-n structure via a tunnel junction 404", if present.
- the first p-n junction 502, the second p-n junction 506, and the third p-n junction 508 can be electrically coupled by using tunnel junctions 504' and 504" as shown in Figure 5, wherein the first p-n junction 502, the second p-n junction 506, and the third p-n junction 508 are voltage generating junctions of the triple-junction optoelectronic device 500, and the tunnel junctions 504' and 504" provide electrical coupling between the first, second and third p-n junctions and/or the rest of the device.
- FIG. 6 illustrates another example of an embodiment or implementation of a multi-junction optoelectronic device 600 according to the present disclosure.
- the multi-junction optoelectronic device 600 includes semiconductor structures 602, 606 and 608.
- the semiconductor structure 602 corresponds to a first p-n junction
- the semiconductor structure 606 corresponds to a second p-n junction
- the semiconductor structure 608 corresponds to a third p-n junction
- the multi-junction optoelectronic device 600 includes three structures (e.g., three p-n structures), as described above. One of the structures has a higher band gap and is placed or positioned on the top of the multi-junction optoelectronic device 600, and another of the structures has a lower band gap and is placed or positioned on the bottom of the multi-junction optoelectronic device 600.
- the structure 602 which can be referred to as the p-n structure 602, has higher or larger bandgap than the structure 608 and is comprised of a window layer 618 (for example, AllnP, AIGalnP, or AIGaAs), an n-type material (for example, AllnGaP, InGaP or AIGaAs), and a p-type material (for example, AllnGaP, InGaP or AIGaAs).
- the structure 602 can optionally include a back side window layer (for example, AllnP, AIGalnP, or AIGaAs).
- the first p-n junction 730 can be an AIGaAs p-n junction
- the second p-n junction 735 can be a GaAs p-n junction
- the third p-n junction 740 can be a SiGeSn p-n junction such that the multi-junction optoelectronic device 720 has AIGaAs/GaAs on SiGeSn.
- the first p-n junction 730 and the second p-n junction 735 can be part of a first p-n structure and the third p-n junction 740 can be part of a second p-n structure.
- the first p-n junction 760 can be an AllnGaP p-n junction
- the second p-n junction 765 can be an AIGaAs p-n junction
- the third p-n junction 770 can be a GaAs p-n junction
- the fourth p-n junction 780 can be a SiGeSn p-n junctions such that the multi-junction optoelectronic device 750 has AllnGaP/AIGaAs/GaAs on SiGeSn.
- first p-n junction 760, the second p-n junction 765, and the third p-n junction 770 can be part of a first p-n structure and the fourth p-n junction 780 can be part of a second p-n structure.
Abstract
Description
Claims
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201662289070P | 2016-01-29 | 2016-01-29 | |
US15/417,105 US20170141256A1 (en) | 2009-10-23 | 2017-01-26 | Multi-junction optoelectronic device with group iv semiconductor as a bottom junction |
PCT/US2017/015387 WO2017132534A1 (en) | 2016-01-29 | 2017-01-27 | Multi-junction optoelectronic device with group iv semiconductor as a bottom junction |
Publications (1)
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EP3408871A1 true EP3408871A1 (en) | 2018-12-05 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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EP17703637.3A Withdrawn EP3408871A1 (en) | 2016-01-29 | 2017-01-27 | Multi-junction optoelectronic device with group iv semiconductor as a bottom junction |
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Country | Link |
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EP (1) | EP3408871A1 (en) |
JP (1) | JP2019506742A (en) |
KR (1) | KR20180107174A (en) |
CN (1) | CN108604620A (en) |
WO (1) | WO2017132534A1 (en) |
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US10586884B2 (en) | 2018-06-18 | 2020-03-10 | Alta Devices, Inc. | Thin-film, flexible multi-junction optoelectronic devices incorporating lattice-matched dilute nitride junctions and methods of fabrication |
US10797197B2 (en) * | 2018-06-18 | 2020-10-06 | Alta Devices, Inc. | Thin-film, flexible optoelectronic devices incorporating a single lattice-matched dilute nitride junction and methods of fabrication |
CN111725365B (en) * | 2019-03-21 | 2021-06-08 | 山东华光光电子股份有限公司 | GaAs-based multi-junction yellow-green light LED and preparation method thereof |
CN112928178B (en) * | 2021-02-07 | 2021-11-02 | 中山德华芯片技术有限公司 | Three-color detector and manufacturing method thereof |
Family Cites Families (13)
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WO2009155119A2 (en) | 2008-05-30 | 2009-12-23 | Alta Devices, Inc. | Methods and apparatus for a chemical vapor deposition reactor |
US8330036B1 (en) * | 2008-08-29 | 2012-12-11 | Seoijin Park | Method of fabrication and structure for multi-junction solar cell formed upon separable substrate |
US20120104460A1 (en) * | 2010-11-03 | 2012-05-03 | Alta Devices, Inc. | Optoelectronic devices including heterojunction |
GB2501432B (en) * | 2009-02-19 | 2013-12-04 | Iqe Silicon Compounds Ltd | Photovoltaic cell |
GB2467934B (en) * | 2009-02-19 | 2013-10-30 | Iqe Silicon Compounds Ltd | Photovoltaic cell |
WO2010124059A2 (en) * | 2009-04-24 | 2010-10-28 | Wakonda Technologies, Inc. | Crystalline thin-film photovoltaic structures and methods for forming the same |
US9136422B1 (en) * | 2012-01-19 | 2015-09-15 | Alta Devices, Inc. | Texturing a layer in an optoelectronic device for improved angle randomization of light |
US20130025654A1 (en) * | 2011-07-29 | 2013-01-31 | International Business Machines Corporation | Multi-junction photovoltaic device and fabrication method |
US20130048061A1 (en) * | 2011-08-24 | 2013-02-28 | International Business Machines Corporation | Monolithic multi-junction photovoltaic cell and method |
WO2013030529A1 (en) * | 2011-08-29 | 2013-03-07 | Iqe Plc. | Photovoltaic device |
US9831363B2 (en) * | 2014-06-19 | 2017-11-28 | John Farah | Laser epitaxial lift-off of high efficiency solar cell |
US20140373906A1 (en) * | 2013-06-25 | 2014-12-25 | Solar Junction Corporation | Anti-reflection coatings for multijunction solar cells |
US20150034152A1 (en) * | 2013-07-30 | 2015-02-05 | Emcore Solar Power, Inc. | Solar cell with passivation on the window layer |
-
2017
- 2017-01-27 KR KR1020187024392A patent/KR20180107174A/en not_active Application Discontinuation
- 2017-01-27 EP EP17703637.3A patent/EP3408871A1/en not_active Withdrawn
- 2017-01-27 CN CN201780008978.4A patent/CN108604620A/en active Pending
- 2017-01-27 JP JP2018537648A patent/JP2019506742A/en active Pending
- 2017-01-27 WO PCT/US2017/015387 patent/WO2017132534A1/en active Application Filing
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JP2019506742A (en) | 2019-03-07 |
CN108604620A (en) | 2018-09-28 |
WO2017132534A1 (en) | 2017-08-03 |
KR20180107174A (en) | 2018-10-01 |
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