CN112928178B - Three-color detector and manufacturing method thereof - Google Patents
Three-color detector and manufacturing method thereof Download PDFInfo
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- CN112928178B CN112928178B CN202110168698.8A CN202110168698A CN112928178B CN 112928178 B CN112928178 B CN 112928178B CN 202110168698 A CN202110168698 A CN 202110168698A CN 112928178 B CN112928178 B CN 112928178B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims abstract description 39
- 239000000463 material Substances 0.000 claims abstract description 38
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 27
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 15
- 230000005641 tunneling Effects 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 9
- 238000010521 absorption reaction Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 3
- 238000001514 detection method Methods 0.000 abstract description 8
- 230000007547 defect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
- H01L31/1035—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIIBV compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The invention discloses a three-color detector and a manufacturing method thereof, wherein the three-color detector comprises the following components in sequential stacking arrangement: a GaN substrate; the AlGaN sub detector is arranged on the GaN substrate, and a first buffer layer is arranged between the AlGaN sub detector and the GaN substrate; the InGaAs sub detector is connected with the AlGaN sub detector through a bonding layer; and a tunneling junction is arranged between the InGaNAs sub-detector and the InGaAs sub-detector, and a second buffer layer is arranged on the InGaNAs sub-detector. By vertically integrating the detection structures of ultraviolet/visible light/infrared multiple wave bands in the depth direction, the GaN material is used for responding to 365nm ultraviolet wave band information, the InGaAs material is used for responding to 365-1700 nm wave band information, and the InGaNAs material is used for responding to 1700-3000 nm mid-infrared wave band information, so that the ultraviolet/visible light/infrared wave bands are detected simultaneously, a color image of a target is obtained, and the information of the target is obtained more abundantly, more accurately and more reliably.
Description
Technical Field
The invention relates to the field of photoelectric detectors, in particular to a three-color detector and a manufacturing method thereof.
Background
The principle of the photodetector is that radiation causes a change in the conductivity of the irradiated material. The photoelectric detector has wide application in various fields of military and national economy. The infrared detector is the most typical one, and is widely applied to weather and meteorological prediction, satellite-to-ground resource exploration and monitoring, surface feature landscape and crop spectral analysis, the existing infrared detector is only effective on light waves in an infrared band, only monochromatic black and white pictures of a target can be obtained, the obtained target information is very limited, and the accurate information of the detected target cannot be accurately reflected.
Disclosure of Invention
The present invention is directed to solving at least one of the problems of the prior art. Therefore, the invention provides a three-color detector and a manufacturing method thereof, which can realize wide spectrum detection of a plurality of wave bands.
According to an embodiment of the first aspect of the present invention, a three-color detector includes: a GaN substrate; the AlGaN sub detector is arranged on the GaN substrate, and a first buffer layer is arranged between the AlGaN sub detector and the GaN substrate; the InGaAs sub detector is connected with the AlGaN sub detector through a bonding layer; and a tunneling junction is arranged between the InGaNAs sub-detector and the InGaAs sub-detector, and a second buffer layer is arranged on the InGaNAs sub-detector.
The three-color detector according to the embodiment of the first aspect of the invention has at least the following advantages: by vertically integrating the detection structures of ultraviolet/visible light/infrared multiple wave bands in the depth direction, the GaN material is used for responding to 365nm ultraviolet wave band information, the InGaAs material is used for responding to 365-1700 nm wave band information, and the InGaNAs material is used for responding to 1700-3000 nm mid-infrared wave band information, so that the ultraviolet/visible light/infrared wave bands are detected simultaneously, a color image of a target is obtained, and the information of the target is obtained more abundantly, more accurately and more reliably.
According to some embodiments of the first aspect of the present invention, the InGaAs sub-detector employs In0.53Ga0.47As material.
According to some embodiments of the first aspect of the present invention, the AlGaN sub-detector, the InGaAs sub-detector, and the InGaNAs sub-detector each comprise an n-type doped layer, an i-type absorption layer, and a p-type doped layer.
According to some embodiments of the first aspect of the present invention, the bonding layer is formed by bonding a first bonding layer disposed on an upper surface of the AlGaN sub-detector and a second bonding layer disposed on a lower surface of the InGaAs sub-detector.
According to a second aspect of the invention, a method for manufacturing a three-color detector comprises the following steps: s100, sequentially and normally installing a first buffer layer, an AlGaN sub-detector and a first bonding layer on the GaN substrate; s200, sequentially inversely growing a second buffer layer, an InGaNAs sub-detector, a tunneling junction, an InGaAs sub-detector and a second bonding layer on the InP substrate; s300, bonding the first bonding layer and the second bonding layer; s400, removing the InP substrate.
The method for manufacturing the three-color detector according to the embodiment of the second aspect of the invention has at least the following advantages: by vertically integrating the detection structures of ultraviolet/visible light/infrared multiple wave bands in the depth direction, the GaN material is used for responding to 365nm ultraviolet wave band information, the InGaAs material is used for responding to 365-1700 nm wave band information, and the InGaNAs material is used for responding to 1700-3000 nm mid-infrared wave band information, so that the ultraviolet/visible light/infrared wave bands are detected simultaneously, a color image of a target is obtained, and the information of the target is obtained more abundantly, more accurately and more reliably.
According to some embodiments of the second aspect of the present invention, the InGaAs sub-detector employs In0.53Ga0.47As material.
According to some embodiments of the second aspect of the present invention, the AlGaN sub-detector, the InGaAs sub-detector, and the InGaNAs sub-detector each comprise an n-type doped layer, an i-type absorption layer, and a p-type doped layer.
According to some embodiments of the second aspect of the present invention, the epitaxial processes of the first buffer layer, the AlGaN sub-detector, the first bonding layer, the second buffer layer, the InGaNAs sub-detector, the tunneling junction, the InGaAs sub-detector, and the second bonding layer are lattice matching growth.
Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
Drawings
The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
FIG. 1 is a schematic diagram of a three-color sensor according to an embodiment of the first aspect of the present invention;
FIG. 2 is a diagram showing quantum efficiencies of Si detectors and InGaAs detectors of different compositions in different wavelength bands;
FIG. 3 is a flow chart of a method for fabricating a three-color sensor according to an embodiment of the second aspect;
FIG. 4 is a view of a front loading growth structure of an embodiment of the second aspect;
fig. 5 is a view of a flip-chip growth structure of an embodiment of the second aspect.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.
In the description of the present invention, it should be understood that the orientation or positional relationship referred to in the description of the orientation, such as the upper, lower, front, rear, left, right, etc., is based on the orientation or positional relationship shown in the drawings, and is only for convenience of description and simplification of description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention.
Referring to fig. 1, a three-color detector according to an embodiment of the first aspect of the present disclosure includes: a GaN substrate; the AlGaN sub detector is arranged on the GaN substrate, and a first buffer layer is arranged between the AlGaN sub detector and the GaN substrate and can be made of AlN or GaN materials; the InGaAs sub detector is connected with the AlGaN sub detector through a bonding layer; and a tunneling junction is arranged between the InGaNAs sub-detector and the InGaAs sub-detector, a second buffer layer is arranged on the InGaNAs sub-detector, and the second buffer layer can be made of InP materials.
According to the scheme, the detection structures of ultraviolet/visible light/infrared multiple wave bands are vertically integrated in the depth direction, the GaN material is used for responding to 365nm ultraviolet wave band information, the InGaAs material is used for responding to 365-1700 nm wave band information, the InGaNAs material is used for responding to 1700-3000 nm mid-infrared wave band information, simultaneous detection of the ultraviolet/visible light/infrared wave bands is achieved, a color image of a target is obtained, and the information of the target is obtained more abundantly, more accurately and more reliably.
In some embodiments of the first aspect of the present invention, the InGaAs sub-detector is made of in0.53ga0.47as material, as shown In fig. 2, the quantum efficiency of the in0.53ga0.47as material is greater than 80%, which is significantly higher than that of the Si detector In the same band, and the quantum efficiency of the corresponding in0.82ga0.18as and in0.74ga0.26as In the respective response wavelength ranges is only 70%, mainly because as the In component is increased, the mismatch between the InGaAs material and the InP material is increased, which may introduce defect energy level In the forbidden band of the InGaAs material, and thus the quantum efficiency may be reduced.
In some embodiments of the first aspect of the present invention, the AlGaN sub-detector, the InGaAs sub-detector, and the InGaNAs sub-detector each include an n-type doped layer, an i-type absorption layer, and a p-type doped layer.
In some embodiments of the first aspect of the present invention, the bonding layer is formed by bonding a first bonding layer disposed on an upper surface of the AlGaN sub-detector and a second bonding layer disposed on a lower surface of the InGaAs sub-detector.
As shown in fig. 3, a method for manufacturing a three-color detector according to a second embodiment of the present invention includes the following steps:
s100, sequentially and normally installing a first buffer layer, an AlGaN sub-detector and a first bonding layer on the GaN substrate, as shown in FIG. 4; wherein, the first buffer layer can adopt AlN or GaN material;
s200, sequentially inversely growing a second buffer layer, an InGaNAs sub-detector, a tunneling junction, an InGaAs sub-detector and a second bonding layer on the InP substrate, as shown in figure 5; the second buffer layer may be made of InP material;
s300, bonding the first bonding layer and the second bonding layer;
s400, removing the InP substrate.
According to the scheme, the detection structures of ultraviolet/visible light/infrared multiple wave bands are vertically integrated in the depth direction, the GaN material is used for responding to 365nm ultraviolet wave band information, the InGaAs material is used for responding to 365-1700 nm wave band information, the InGaNAs material is used for responding to 1700-3000 nm mid-infrared wave band information, simultaneous detection of the ultraviolet/visible light/infrared wave bands is achieved, a color image of a target is obtained, and the information of the target is obtained more abundantly, more accurately and more reliably.
In some embodiments of the first aspect of the present invention, the InGaAs sub-detector is made of in0.53ga0.47as material, as shown In fig. 2, the quantum efficiency of the in0.53ga0.47as material is greater than 80%, which is significantly higher than that of the Si detector In the same band, and the quantum efficiency of the corresponding in0.82ga0.18as and in0.74ga0.26as In the respective response wavelength ranges is only 70%, mainly because as the In component is increased, the mismatch between the InGaAs material and the InP material is increased, which may introduce defect energy level In the forbidden band of the InGaAs material, and thus the quantum efficiency may be reduced.
In some embodiments of the second aspect of the present invention, the AlGaN sub-detector, the InGaAs sub-detector, and the InGaNAs sub-detector each include an n-type doped layer, an i-type absorption layer, and a p-type doped layer.
In some embodiments of the second aspect of the present invention, the epitaxial processes of the first buffer layer, the AlGaN sub-detector, the first bonding layer, the second buffer layer, the InGaNAs sub-detector, the tunneling junction, the InGaAs sub-detector, and the second bonding layer are lattice matching growth. By introducing the lattice-matched InGaNAs material, the cut-off wavelength of the device can be adjusted according to actual needs by adjusting the In component and the N component In the InGaNAs material, so that the defect caused by the introduction of a large mismatch structure is avoided, and the quantum efficiency of the detector is improved.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples" or the like mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
While embodiments of the invention have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.
Claims (8)
1. A three-color detector, comprising in sequential stacked arrangement:
a GaN substrate;
the AlGaN sub detector is arranged on the GaN substrate, and a first buffer layer is arranged between the AlGaN sub detector and the GaN substrate;
the InGaAs sub detector is connected with the AlGaN sub detector through a bonding layer;
and a tunneling junction is arranged between the InGaNAs sub-detector and the InGaAs sub-detector, and a second buffer layer is arranged on the InGaNAs sub-detector.
2. The tristimulus detector of claim 1, wherein: the InGaAs sub-detector adopts In0.53Ga0.47As material.
3. The tristimulus detector of claim 1, wherein: the AlGaN sub detector, the InGaAs sub detector and the InGaNAs sub detector all comprise an n-type doping layer, an i-type absorption layer and a p-type doping layer.
4. The tristimulus detector of claim 1, wherein: the bonding layer is formed by bonding a first bonding layer arranged on the upper surface of the AlGaN sub-detector and a second bonding layer arranged on the lower surface of the InGaAs sub-detector.
5. A method for manufacturing a three-color detector is characterized by comprising the following steps:
s100, sequentially and normally installing a first buffer layer, an AlGaN sub-detector and a first bonding layer which are grown on a GaN substrate;
s200, sequentially inversely growing a second buffer layer, an InGaNAs sub-detector, a tunneling junction, an InGaAs sub-detector and a second bonding layer on the InP substrate;
s300, bonding the first bonding layer and the second bonding layer;
s400, removing the InP substrate.
6. The method of fabricating a tristimulus detector of claim 5, wherein: the InGaAs sub-detector adopts In0.53Ga0.47As material.
7. The method of fabricating a tristimulus detector of claim 5, wherein: the AlGaN sub detector, the InGaAs sub detector and the InGaNAs sub detector all comprise an n-type doping layer, an i-type absorption layer and a p-type doping layer.
8. The method for manufacturing a three-color detector according to claim 5, wherein the epitaxial processes of the first buffer layer, the AlGaN sub-detector, the first bonding layer, the second buffer layer, the InGaNAs sub-detector, the tunneling junction, the InGaAs sub-detector and the second bonding layer are lattice matching growth.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101419996A (en) * | 2008-12-04 | 2009-04-29 | 中国电子科技集团公司第十三研究所 | Infrared-ultraviolet multi-color detector and production process thereof |
| CN102324443A (en) * | 2011-09-21 | 2012-01-18 | 中国电子科技集团公司第十八研究所 | Inverted triple-junction InGaN solar cell |
| CN104347747A (en) * | 2013-08-01 | 2015-02-11 | 中国电子科技集团公司第十八研究所 | Three-junction solar cell formed through growing nitrogen indium gallium system on silicon cell |
| CN106684200A (en) * | 2016-12-30 | 2017-05-17 | 云南师范大学 | Fabrication method of three-color infrared detector |
| CN108604620A (en) * | 2016-01-29 | 2018-09-28 | 奥塔装置公司 | The more knot opto-electronic devices tied as bottom with IV races semiconductor |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101419996A (en) * | 2008-12-04 | 2009-04-29 | 中国电子科技集团公司第十三研究所 | Infrared-ultraviolet multi-color detector and production process thereof |
| CN102324443A (en) * | 2011-09-21 | 2012-01-18 | 中国电子科技集团公司第十八研究所 | Inverted triple-junction InGaN solar cell |
| CN104347747A (en) * | 2013-08-01 | 2015-02-11 | 中国电子科技集团公司第十八研究所 | Three-junction solar cell formed through growing nitrogen indium gallium system on silicon cell |
| CN108604620A (en) * | 2016-01-29 | 2018-09-28 | 奥塔装置公司 | The more knot opto-electronic devices tied as bottom with IV races semiconductor |
| CN106684200A (en) * | 2016-12-30 | 2017-05-17 | 云南师范大学 | Fabrication method of three-color infrared detector |
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