CN107845690B - 多结光伏器件及其制备方法 - Google Patents

多结光伏器件及其制备方法 Download PDF

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CN107845690B
CN107845690B CN201711071248.7A CN201711071248A CN107845690B CN 107845690 B CN107845690 B CN 107845690B CN 201711071248 A CN201711071248 A CN 201711071248A CN 107845690 B CN107845690 B CN 107845690B
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group
substrate
silicon
silicon germanium
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CN107845690A (zh
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安德鲁·约翰逊
安德鲁·威廉·尼尔森
罗伯特·卡梅伦·哈伯
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    • H10D62/83Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
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    • H10D62/85Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
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    • H10F10/10Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/142Photovoltaic cells having only PN homojunction potential barriers comprising multiple PN homojunctions, e.g. tandem cells
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    • H10F71/127The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H10F71/1272The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP
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    • H10F77/12Active materials
    • H10F77/124Active materials comprising only Group III-V materials, e.g. GaAs
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    • H10F77/311Coatings for devices having potential barriers for photovoltaic cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/544Solar cells from Group III-V materials
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/547Monocrystalline silicon PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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CN201711071248.7A 2011-08-29 2012-08-14 多结光伏器件及其制备方法 Expired - Fee Related CN107845690B (zh)

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Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170141256A1 (en) * 2009-10-23 2017-05-18 Alta Devices, Inc. Multi-junction optoelectronic device with group iv semiconductor as a bottom junction
US10903383B2 (en) 2012-09-14 2021-01-26 The Boeing Company Group-IV solar cell structure using group-IV or III-V heterostructures
US9099595B2 (en) 2012-09-14 2015-08-04 The Boeing Company Group-IV solar cell structure using group-IV or III-V heterostructures
US9985160B2 (en) * 2012-09-14 2018-05-29 The Boeing Company Group-IV solar cell structure using group-IV or III-V heterostructures
US11495705B2 (en) 2012-09-14 2022-11-08 The Boeing Company Group-IV solar cell structure using group-IV or III-V heterostructures
US11646388B2 (en) 2012-09-14 2023-05-09 The Boeing Company Group-IV solar cell structure using group-IV or III-V heterostructures
US9997659B2 (en) 2012-09-14 2018-06-12 The Boeing Company Group-IV solar cell structure using group-IV or III-V heterostructures
KR20140095738A (ko) * 2013-01-25 2014-08-04 삼성전자주식회사 트랜지스터 및 그 제조 방법
CN103199130B (zh) * 2013-03-15 2016-03-09 中国科学院苏州纳米技术与纳米仿生研究所 正装四结太阳电池及其制备方法
CN103137766B (zh) * 2013-03-15 2015-09-09 中国科学院苏州纳米技术与纳米仿生研究所 三结级联太阳电池及其制备方法
CN103199141A (zh) * 2013-03-15 2013-07-10 中国科学院苏州纳米技术与纳米仿生研究所 四结级联太阳能电池及其制备方法
EP2782145A1 (fr) * 2013-03-21 2014-09-24 Alcatel Lucent Procédé de fabrication d'un dispositif photovoltaïque multi-jonctions et dispositif photovoltaïque multi-jonctions ainsi obtenu
CN103219412B (zh) * 2013-04-03 2016-03-09 中国科学院苏州纳米技术与纳米仿生研究所 三结级联太阳电池及其制备方法
CN103151414B (zh) * 2013-04-03 2016-04-27 中国科学院苏州纳米技术与纳米仿生研究所 正装三结级联太阳电池及其制备方法
CN103259193B (zh) * 2013-05-14 2016-03-09 中国科学院苏州纳米技术与纳米仿生研究所 一种1300nm~1550nm含铋化物的半导体激光器的制备方法
CN103311353B (zh) * 2013-05-29 2016-09-07 中国科学院苏州纳米技术与纳米仿生研究所 三结级联太阳能电池及其制备方法
GB2515322A (en) * 2013-06-19 2014-12-24 Univ Surrey Light Receiving Device
US20140373906A1 (en) * 2013-06-25 2014-12-25 Solar Junction Corporation Anti-reflection coatings for multijunction solar cells
CN103426965B (zh) * 2013-08-16 2016-12-28 中国科学院苏州纳米技术与纳米仿生研究所 太阳能电池及其制作方法
CN104638060B (zh) * 2013-11-13 2018-03-06 中国电子科技集团公司第十八研究所 异质结热光伏电池的制备方法
CN104638046B (zh) * 2013-11-13 2017-05-03 中国电子科技集团公司第十八研究所 Ge衬底异质结热光伏电池
CN103839774A (zh) * 2014-02-25 2014-06-04 清华大学 SiGeSn层及其形成方法
US9548408B2 (en) * 2014-04-15 2017-01-17 L-3 Communications Cincinnati Electronics Corporation Tunneling barrier infrared detector devices
JP2016082041A (ja) * 2014-10-15 2016-05-16 株式会社リコー 化合物半導体太陽電池、及び、化合物半導体太陽電池の製造方法
EP3408871A1 (en) * 2016-01-29 2018-12-05 Alta Devices, Inc. Multi-junction optoelectronic device with group iv semiconductor as a bottom junction
CN105720126B (zh) * 2016-04-27 2017-07-28 天津三安光电有限公司 一种倒装四结太阳能电池结构及其制备方法
US20170365732A1 (en) 2016-06-15 2017-12-21 Solar Junction Corporation Dilute nitride bismide semiconductor alloys
CN106531836A (zh) * 2016-11-25 2017-03-22 罗雷 四结太阳能电池
US10593818B2 (en) * 2016-12-09 2020-03-17 The Boeing Company Multijunction solar cell having patterned emitter and method of making the solar cell
CN108807284B (zh) * 2017-04-28 2020-06-26 环球晶圆股份有限公司 一种外延接合基板及其制造方法
US11342498B2 (en) * 2018-01-08 2022-05-24 Integrated Silicon Solution (cayman) Inc. High density 3D magnetic random access memory (MRAM) cell integration using wafer cut and transfer
CN111477677B (zh) * 2020-05-27 2024-12-06 北京时代全芯存储技术股份有限公司 二极管结构及其制造方法
CN113066907B (zh) * 2021-06-03 2021-08-27 南昌凯迅光电有限公司 一种纳米网状表面电极的三结砷化镓太阳电池的制备方法
EP4459682A1 (en) 2023-05-03 2024-11-06 Valstybinis moksliniu tyrimu institutas Fiziniu ir technologijos mokslu centras Method for making multijunction photovoltaic device comprising a gaasbi subcell
CN118658918B (zh) * 2024-07-19 2025-11-04 江苏仲磊芯半导体有限公司 一种四结太阳能电池及其制作方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010094919A2 (en) * 2009-02-19 2010-08-26 Iqe Silicon Compounds Limited Photovoltaic cell
WO2010102345A1 (en) * 2009-03-12 2010-09-16 Shaun Joseph Cunningham Improved photo-voltaic device and system

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63503103A (ja) * 1985-09-30 1988-11-10 鐘淵化学工業株式会社 マルチジャンクション型半導体デバイス
JPS6437060A (en) * 1987-08-03 1989-02-07 Nippon Telegraph & Telephone Semiconductor element
US6281426B1 (en) * 1997-10-01 2001-08-28 Midwest Research Institute Multi-junction, monolithic solar cell using low-band-gap materials lattice matched to GaAs or Ge
US5944913A (en) * 1997-11-26 1999-08-31 Sandia Corporation High-efficiency solar cell and method for fabrication
US6380601B1 (en) 1999-03-29 2002-04-30 Hughes Electronics Corporation Multilayer semiconductor structure with phosphide-passivated germanium substrate
JP3657143B2 (ja) * 1999-04-27 2005-06-08 シャープ株式会社 太陽電池及びその製造方法
US6252287B1 (en) * 1999-05-19 2001-06-26 Sandia Corporation InGaAsN/GaAs heterojunction for multi-junction solar cells
US6340788B1 (en) * 1999-12-02 2002-01-22 Hughes Electronics Corporation Multijunction photovoltaic cells and panels using a silicon or silicon-germanium active substrate cell for space and terrestrial applications
US7339109B2 (en) 2000-06-20 2008-03-04 Emcore Corporation Apparatus and method for optimizing the efficiency of germanium junctions in multi-junction solar cells
JP2002222989A (ja) * 2001-01-26 2002-08-09 Toshiba Corp 半導体発光素子
US6815736B2 (en) 2001-02-09 2004-11-09 Midwest Research Institute Isoelectronic co-doping
US20030015728A1 (en) * 2001-07-17 2003-01-23 Motorola, Inc. Photonic biasing and integrated solar charging networks for integrated circuits
US20060162768A1 (en) * 2002-05-21 2006-07-27 Wanlass Mark W Low bandgap, monolithic, multi-bandgap, optoelectronic devices
US7126052B2 (en) * 2002-10-02 2006-10-24 The Boeing Company Isoelectronic surfactant induced sublattice disordering in optoelectronic devices
CA2551123A1 (en) * 2004-01-20 2005-07-28 Cyrium Technologies Incorporated Solar cell with epitaxially grown quantum dot material
US10069026B2 (en) 2005-12-19 2018-09-04 The Boeing Company Reduced band gap absorber for solar cells
US7872252B2 (en) * 2006-08-11 2011-01-18 Cyrium Technologies Incorporated Method of fabricating semiconductor devices on a group IV substrate with controlled interface properties and diffusion tails
US20080257405A1 (en) * 2007-04-18 2008-10-23 Emcore Corp. Multijunction solar cell with strained-balanced quantum well middle cell
WO2009009111A2 (en) 2007-07-10 2009-01-15 The Board Of Trustees Of The Leland Stanford Junior University GaInNAsSB SOLAR CELLS GROWN BY MOLECULAR BEAM EPITAXY
US8202788B2 (en) 2008-06-26 2012-06-19 Nanyang Technological University Method for fabricating GaNAsSb semiconductor
CN101431117A (zh) * 2008-11-24 2009-05-13 北京索拉安吉清洁能源科技有限公司 具有掺杂阻挡层的多结太阳电池
US20100147366A1 (en) * 2008-12-17 2010-06-17 Emcore Solar Power, Inc. Inverted Metamorphic Multijunction Solar Cells with Distributed Bragg Reflector
GB2467935B (en) 2009-02-19 2013-10-30 Iqe Silicon Compounds Ltd Formation of thin layers of GaAs and germanium materials
US20100282307A1 (en) * 2009-05-08 2010-11-11 Emcore Solar Power, Inc. Multijunction Solar Cells with Group IV/III-V Hybrid Alloys for Terrestrial Applications
US20100282305A1 (en) * 2009-05-08 2010-11-11 Emcore Solar Power, Inc. Inverted Multijunction Solar Cells with Group IV/III-V Hybrid Alloys
US20100282306A1 (en) * 2009-05-08 2010-11-11 Emcore Solar Power, Inc. Multijunction Solar Cells with Group IV/III-V Hybrid Alloys
TW201114043A (en) 2009-10-02 2011-04-16 Epistar Corp A high efficiency solar cell
US20110232730A1 (en) 2010-03-29 2011-09-29 Solar Junction Corp. Lattice matchable alloy for solar cells
US9214580B2 (en) 2010-10-28 2015-12-15 Solar Junction Corporation Multi-junction solar cell with dilute nitride sub-cell having graded doping
WO2013074530A2 (en) * 2011-11-15 2013-05-23 Solar Junction Corporation High efficiency multijunction solar cells

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010094919A2 (en) * 2009-02-19 2010-08-26 Iqe Silicon Compounds Limited Photovoltaic cell
WO2010102345A1 (en) * 2009-03-12 2010-09-16 Shaun Joseph Cunningham Improved photo-voltaic device and system

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AU2012300694A1 (en) 2014-03-20
WO2013030530A1 (en) 2013-03-07
AU2016200282A1 (en) 2016-02-11
ES2813938T3 (es) 2021-03-25
CN103875079B (zh) 2017-12-12
US20140326301A1 (en) 2014-11-06
US20150041863A1 (en) 2015-02-12
JP2014527725A (ja) 2014-10-16
AU2012300694C1 (en) 2016-04-21
JP2018026580A (ja) 2018-02-15
WO2013030531A1 (en) 2013-03-07
US10263129B2 (en) 2019-04-16
AU2016200282B2 (en) 2017-08-31
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US20170117429A1 (en) 2017-04-27
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