JP2019216249A - 光起電デバイス - Google Patents
光起電デバイス Download PDFInfo
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- JP2019216249A JP2019216249A JP2019137470A JP2019137470A JP2019216249A JP 2019216249 A JP2019216249 A JP 2019216249A JP 2019137470 A JP2019137470 A JP 2019137470A JP 2019137470 A JP2019137470 A JP 2019137470A JP 2019216249 A JP2019216249 A JP 2019216249A
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- 239000000463 material Substances 0.000 claims abstract description 97
- 239000004065 semiconductor Substances 0.000 claims abstract description 90
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 66
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 63
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 51
- KAJBHOLJPAFYGK-UHFFFAOYSA-N [Sn].[Ge].[Si] Chemical compound [Sn].[Ge].[Si] KAJBHOLJPAFYGK-UHFFFAOYSA-N 0.000 claims description 14
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 abstract description 56
- 239000010703 silicon Substances 0.000 abstract description 55
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 51
- 230000004888 barrier function Effects 0.000 abstract description 36
- 238000009792 diffusion process Methods 0.000 abstract description 29
- 239000010410 layer Substances 0.000 description 256
- 239000000758 substrate Substances 0.000 description 77
- 238000000034 method Methods 0.000 description 39
- 229910052732 germanium Inorganic materials 0.000 description 21
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 20
- 238000012546 transfer Methods 0.000 description 10
- 239000000203 mixture Substances 0.000 description 8
- 230000006911 nucleation Effects 0.000 description 8
- 238000010899 nucleation Methods 0.000 description 8
- 238000012545 processing Methods 0.000 description 8
- 238000000151 deposition Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 5
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 4
- 229910005540 GaP Inorganic materials 0.000 description 4
- 238000003776 cleavage reaction Methods 0.000 description 4
- 238000000407 epitaxy Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000007017 scission Effects 0.000 description 4
- 150000003376 silicon Chemical class 0.000 description 4
- 229910052720 vanadium Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- -1 AlGaAsP Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical group 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000011066 ex-situ storage Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical group [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
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Abstract
Description
−シリコン以外のIV族半導体材料層を準備するステップ。
−少なくとも1種類のIII族の原子と少なくとも1種類のV族の原子とから生成され、IV族半導体層との界面を有するIII−V族半導体材料層を設けるステップ。
−III−V族半導体層とIV族半導体層との間の界面か、または、この界面から離間した、IV族半導体層か、またはIII−V族半導体層においてシリコン層を設けるステップ。
−III−V材料層からのV族原子をシリコン層を通ってIV族材料にドープし、界面と接するIV族半導体層において、V族でドープされたn型領域を形成するステップ。
−これらの材料で形成された太陽電池セルを準備するステップ。
−この太陽電池に太陽光を照射するステップ。この方法は太陽電電池に照射するための太陽光を集光するステップを備えてよい。
−シリコンゲルマニウムまたはシリコンゲルマニウム錫の材料からなる第1のセル。
−シリコンゲルマニウム錫からなる第2のセル。
ここで第1のセルのシリコンゲルマニウムまたはシリコン−ゲルマニウム錫、および第2のセルのシリコンゲルマニウム錫は、ガリウム砒素に格子整合されている。
−ガリウム砒素の基板またはガリウム砒素に格子整合された他の材料を準備するステップ。
−シリコンゲルマニウムまたは上記基板に格子整合されたシリコンゲルマニウム錫からなる第1のセルを成長させるステップ。
−この第1の光吸収セルに格子整合されたシリコンゲルマニウム錫からなる第2のセルを成長させるステップ。
(なお、図3の実施例に関し、通常p−n接合部2は、シリコンバリヤ6のIII−V層側と反対の側にあり、本発明は通常バリヤ6がV族原子の拡散を制限するが、このバリヤを通過してIV族材料をn型に変換するには十分でない場合を含むものであり、このp−n接合部は、このバリヤかまたはこのバリヤの近傍*にある。(*p−n接合部はもちろん数単原子層のバリヤより大きい領域を有している。))
Claims (1)
- 半導体層(複数)から形成された光を吸収する2つ以上のセルを有する多接合光起電デバイスであって、
シリコンゲルマニウムまたはシリコンゲルマニウム錫の材料からなる第1のセルと、
シリコンゲルマニウム錫からなる第2のセルと、を備え、
前記第1のセルのシリコンゲルマニウムまたはシリコンゲルマニウム錫、および前記第2のセルのシリコンゲルマニウム錫は、ガリウム砒素に格子整合されていることを特徴とする多接合光起電デバイス。
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US201161528650P | 2011-08-29 | 2011-08-29 | |
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JP6228119B2 (ja) | 2017-11-08 |
EP2745329A1 (en) | 2014-06-25 |
WO2013030530A1 (en) | 2013-03-07 |
EP2745328A1 (en) | 2014-06-25 |
US10263129B2 (en) | 2019-04-16 |
US20170117429A1 (en) | 2017-04-27 |
EP2745330B1 (en) | 2020-06-03 |
US10367107B2 (en) | 2019-07-30 |
AU2012300694B2 (en) | 2015-10-22 |
WO2013030529A1 (en) | 2013-03-07 |
WO2013030531A1 (en) | 2013-03-07 |
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CN107845690B (zh) | 2020-09-08 |
CN103875079B (zh) | 2017-12-12 |
US20140345679A1 (en) | 2014-11-27 |
CN107845690A (zh) | 2018-03-27 |
EP2745329B1 (en) | 2018-09-19 |
EP2745330A1 (en) | 2014-06-25 |
AU2012300694A1 (en) | 2014-03-20 |
US20150041863A1 (en) | 2015-02-12 |
AU2012300694A8 (en) | 2014-04-03 |
JP2014527725A (ja) | 2014-10-16 |
AU2012300694C1 (en) | 2016-04-21 |
AU2016200282B2 (en) | 2017-08-31 |
US20140326301A1 (en) | 2014-11-06 |
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