JP2012521090A5 - - Google Patents
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- Publication number
- JP2012521090A5 JP2012521090A5 JP2012500800A JP2012500800A JP2012521090A5 JP 2012521090 A5 JP2012521090 A5 JP 2012521090A5 JP 2012500800 A JP2012500800 A JP 2012500800A JP 2012500800 A JP2012500800 A JP 2012500800A JP 2012521090 A5 JP2012521090 A5 JP 2012521090A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- delta
- solar cell
- tunnel diode
- semiconductor material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002019 doping agent Substances 0.000 claims description 55
- 239000000463 material Substances 0.000 claims description 25
- 239000004065 semiconductor Substances 0.000 claims description 21
- 230000000295 complement effect Effects 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 8
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 2
- 229910005540 GaP Inorganic materials 0.000 claims 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims 1
- 238000000034 method Methods 0.000 description 11
- 238000000151 deposition Methods 0.000 description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/404,795 | 2009-03-16 | ||
| US12/404,795 US9722131B2 (en) | 2009-03-16 | 2009-03-16 | Highly doped layer for tunnel junctions in solar cells |
| PCT/US2010/023171 WO2010107522A1 (en) | 2009-03-16 | 2010-02-04 | Highly doped layer for tunnel junctions in solar cells |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015120850A Division JP6093401B2 (ja) | 2009-03-16 | 2015-06-16 | 太陽電池内のトンネル接合の高濃度ドープ層 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012521090A JP2012521090A (ja) | 2012-09-10 |
| JP2012521090A5 true JP2012521090A5 (enExample) | 2013-03-28 |
| JP5794974B2 JP5794974B2 (ja) | 2015-10-14 |
Family
ID=42396457
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012500800A Active JP5794974B2 (ja) | 2009-03-16 | 2010-02-04 | 太陽電池内のトンネル接合の高濃度ドープ層 |
| JP2015120850A Active JP6093401B2 (ja) | 2009-03-16 | 2015-06-16 | 太陽電池内のトンネル接合の高濃度ドープ層 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015120850A Active JP6093401B2 (ja) | 2009-03-16 | 2015-06-16 | 太陽電池内のトンネル接合の高濃度ドープ層 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US9722131B2 (enExample) |
| EP (1) | EP2409334B1 (enExample) |
| JP (2) | JP5794974B2 (enExample) |
| CN (1) | CN102341913B (enExample) |
| WO (1) | WO2010107522A1 (enExample) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11417788B2 (en) * | 2010-11-19 | 2022-08-16 | The Boeing Company | Type-II high bandgap tunnel junctions of InP lattice constant for multijunction solar cells |
| US20120216857A1 (en) * | 2011-02-28 | 2012-08-30 | Atomic Energy Council-Institute Of Nuclear Energy Research | Solar Cell Assembly with an Improved Photocurrent Collection Efficiency |
| JP5681607B2 (ja) * | 2011-03-28 | 2015-03-11 | 株式会社東芝 | 光電変換素子 |
| EP2721647A2 (en) * | 2011-06-15 | 2014-04-23 | 3M Innovative Properties Company | Solar cell with improved conversion efficiency |
| CN102244134B (zh) * | 2011-08-02 | 2013-05-15 | 厦门市三安光电科技有限公司 | 一种高效四结太阳能电池及其制作方法 |
| WO2013033671A1 (en) * | 2011-09-02 | 2013-03-07 | Amberwave, Inc. | Solar cell |
| US9263611B2 (en) * | 2011-11-17 | 2016-02-16 | Solar Junction Corporation | Method for etching multi-layer epitaxial material |
| US9178098B2 (en) * | 2012-02-29 | 2015-11-03 | The Boeing Company | Solar cell with delta doping layer |
| EP2865016B1 (en) | 2012-06-22 | 2024-06-05 | Epiworks, Inc. | Manufacturing semiconductor-based multi-junction photovoltaic devices |
| CN102751389A (zh) * | 2012-07-19 | 2012-10-24 | 厦门市三安光电科技有限公司 | 一种高效多结太阳能电池的制备方法 |
| US9997659B2 (en) * | 2012-09-14 | 2018-06-12 | The Boeing Company | Group-IV solar cell structure using group-IV or III-V heterostructures |
| US11495705B2 (en) * | 2012-09-14 | 2022-11-08 | The Boeing Company | Group-IV solar cell structure using group-IV or III-V heterostructures |
| US9099595B2 (en) | 2012-09-14 | 2015-08-04 | The Boeing Company | Group-IV solar cell structure using group-IV or III-V heterostructures |
| US10903383B2 (en) | 2012-09-14 | 2021-01-26 | The Boeing Company | Group-IV solar cell structure using group-IV or III-V heterostructures |
| US11646388B2 (en) * | 2012-09-14 | 2023-05-09 | The Boeing Company | Group-IV solar cell structure using group-IV or III-V heterostructures |
| US9985160B2 (en) * | 2012-09-14 | 2018-05-29 | The Boeing Company | Group-IV solar cell structure using group-IV or III-V heterostructures |
| JP6582591B2 (ja) * | 2014-07-11 | 2019-10-02 | 株式会社リコー | 化合物半導体太陽電池、及び、化合物半導体太陽電池の製造方法 |
| CN104393115B (zh) * | 2014-11-18 | 2016-07-27 | 上海空间电源研究所 | 一种多结砷化镓太阳电池一次腐蚀工艺方法 |
| US10910506B1 (en) * | 2015-04-09 | 2021-02-02 | Solaero Technologies Corp. | Solar cell with gradation in the top window layer |
| DE102015006379B4 (de) * | 2015-05-18 | 2022-03-17 | Azur Space Solar Power Gmbh | Skalierbare Spannungsquelle |
| CN107093647A (zh) * | 2017-04-06 | 2017-08-25 | 江苏中天科技股份有限公司 | 激光光伏电池及其制备方法 |
| JP7122119B2 (ja) * | 2017-05-25 | 2022-08-19 | 昭和電工光半導体株式会社 | 発光ダイオード |
| US10439103B2 (en) | 2017-05-25 | 2019-10-08 | Showa Denko K. K. | Light-emitting diode and method for manufacturing tunnel junction layer |
| CN108493284B (zh) * | 2018-05-03 | 2020-03-10 | 扬州乾照光电有限公司 | 一种晶格失配的多结太阳能电池及其制作方法 |
| CN111261744A (zh) * | 2018-11-30 | 2020-06-09 | 东泰高科装备科技有限公司 | 多结太阳能电池及其制备方法 |
| CN111341872B (zh) * | 2018-12-18 | 2022-10-25 | 紫石能源有限公司 | 一种砷化镓太阳能电池外延结构及其生长方法 |
| DE102020001185A1 (de) | 2020-02-25 | 2021-08-26 | Azur Space Solar Power Gmbh | Stapelförmige monolithische aufrecht-metamorphe lll-V-Mehrfachsolarzelle |
| US12267062B2 (en) | 2020-06-17 | 2025-04-01 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonators with three-layer electrodes |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6437060A (en) | 1987-08-03 | 1989-02-07 | Nippon Telegraph & Telephone | Semiconductor element |
| US5342453A (en) * | 1992-11-13 | 1994-08-30 | Midwest Research Institute | Heterojunction solar cell |
| JP3250425B2 (ja) * | 1995-09-13 | 2002-01-28 | 日立電線株式会社 | 化合物半導体ウエハ及び太陽電池 |
| US6316715B1 (en) * | 2000-03-15 | 2001-11-13 | The Boeing Company | Multijunction photovoltaic cell with thin 1st (top) subcell and thick 2nd subcell of same or similar semiconductor material |
| WO2002023640A1 (en) | 2000-09-14 | 2002-03-21 | Optowell Co., Ltd. | Nitride compound semiconductor light emitting device having a tunnel junction structure and fabrication method thereof |
| JP2003218374A (ja) * | 2002-01-23 | 2003-07-31 | Sharp Corp | Ｉｉｉ−ｖ族太陽電池 |
| DE102004023856B4 (de) * | 2004-05-12 | 2006-07-13 | Rwe Space Solar Power Gmbh | Solarzelle mit integrierter Schutzdiode und zusätzlich auf dieser angeordneten Tunneldiode |
-
2009
- 2009-03-16 US US12/404,795 patent/US9722131B2/en active Active
-
2010
- 2010-02-04 WO PCT/US2010/023171 patent/WO2010107522A1/en not_active Ceased
- 2010-02-04 JP JP2012500800A patent/JP5794974B2/ja active Active
- 2010-02-04 EP EP10703764.0A patent/EP2409334B1/en active Active
- 2010-02-04 CN CN201080009936.0A patent/CN102341913B/zh active Active
-
2015
- 2015-06-16 JP JP2015120850A patent/JP6093401B2/ja active Active
-
2016
- 2016-09-16 US US15/267,192 patent/US10326042B2/en active Active
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