JP2013508966A5 - - Google Patents
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- Publication number
- JP2013508966A5 JP2013508966A5 JP2012535166A JP2012535166A JP2013508966A5 JP 2013508966 A5 JP2013508966 A5 JP 2013508966A5 JP 2012535166 A JP2012535166 A JP 2012535166A JP 2012535166 A JP2012535166 A JP 2012535166A JP 2013508966 A5 JP2013508966 A5 JP 2013508966A5
- Authority
- JP
- Japan
- Prior art keywords
- tunnel diode
- doped
- semiconductor
- region
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 35
- 239000000463 material Substances 0.000 claims 15
- 150000001875 compounds Chemical class 0.000 claims 6
- 239000002070 nanowire Substances 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 4
- 229910000673 Indium arsenide Inorganic materials 0.000 claims 2
- 229910052785 arsenic Inorganic materials 0.000 claims 2
- 229910052738 indium Inorganic materials 0.000 claims 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- 229910005542 GaSb Inorganic materials 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052787 antimony Inorganic materials 0.000 claims 1
- 239000011258 core-shell material Substances 0.000 claims 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 238000001228 spectrum Methods 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE0950781-5 | 2009-10-22 | ||
| SE0950781 | 2009-10-22 | ||
| PCT/SE2010/051147 WO2011049529A1 (en) | 2009-10-22 | 2010-10-22 | Nanowire tunnel diode and method for making the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2013508966A JP2013508966A (ja) | 2013-03-07 |
| JP2013508966A5 true JP2013508966A5 (enExample) | 2013-12-05 |
Family
ID=43900554
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012535166A Pending JP2013508966A (ja) | 2009-10-22 | 2010-10-22 | ナノワイヤトンネルダイオードおよびその製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20120199187A1 (enExample) |
| EP (1) | EP2491595A4 (enExample) |
| JP (1) | JP2013508966A (enExample) |
| KR (1) | KR20120099441A (enExample) |
| CN (1) | CN102656700A (enExample) |
| WO (1) | WO2011049529A1 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120006390A1 (en) * | 2009-12-08 | 2012-01-12 | Yijie Huo | Nano-wire solar cell or detector |
| US10090292B2 (en) | 2012-07-06 | 2018-10-02 | Qunano Ab | Radial nanowire Esaki diode devices and methods |
| US8785909B2 (en) * | 2012-09-27 | 2014-07-22 | Intel Corporation | Non-planar semiconductor device having channel region with low band-gap cladding layer |
| US8937294B2 (en) | 2013-03-15 | 2015-01-20 | Rohm And Haas Electronic Materials Llc | Multi-heterojunction nanoparticles, methods of manufacture thereof and articles comprising the same |
| GB2517186A (en) * | 2013-08-14 | 2015-02-18 | Norwegian University Of Science And Technology | Radial P-N junction nanowire solar cells |
| KR102149331B1 (ko) | 2013-08-30 | 2020-08-28 | 삼성전자주식회사 | 와이어 구조체와 이를 구비하는 반도체 소자 및 와이어 구조체의 제조방법 |
| US20150187889A1 (en) * | 2013-12-27 | 2015-07-02 | University Of Rochester | Surface-controlled semiconductor nano-devices, methods and applications |
| JP6874572B2 (ja) * | 2017-07-07 | 2021-05-19 | 富士通株式会社 | 電子デバイス、及び電子デバイスの製造方法 |
| JP6954184B2 (ja) * | 2018-03-01 | 2021-10-27 | 富士通株式会社 | 半導体デバイス、受信機及び半導体デバイスの製造方法 |
| JP7103027B2 (ja) * | 2018-07-30 | 2022-07-20 | 富士通株式会社 | 化合物半導体装置、化合物半導体装置の製造方法、発電装置及び電源装置 |
| JP7211201B2 (ja) * | 2019-03-27 | 2023-01-24 | 富士通株式会社 | 化合物半導体装置及びその製造方法、検波器 |
| JP7265138B2 (ja) * | 2019-04-26 | 2023-04-26 | 富士通株式会社 | 半導体デバイス、コンピュータ、及び半導体デバイスの製造方法 |
| CN111162141A (zh) * | 2019-12-20 | 2020-05-15 | 燕山大学 | 一种多结纳米线太阳能电池的制备方法 |
| EP4138141A4 (en) * | 2020-04-15 | 2023-06-07 | Fujitsu Limited | SEMICONDUCTOR DEVICE, RESERVOIR COMPUTER SYSTEM AND METHOD OF MAKING A SEMICONDUCTOR DEVICE |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4198644A (en) * | 1978-06-09 | 1980-04-15 | The United States Of America As Represented By The Secretary Of The Army | Tunnel diode |
| US4667059A (en) * | 1985-10-22 | 1987-05-19 | The United States Of America As Represented By The United States Department Of Energy | Current and lattice matched tandem solar cell |
| US6660928B1 (en) * | 2002-04-02 | 2003-12-09 | Essential Research, Inc. | Multi-junction photovoltaic cell |
| US7335908B2 (en) | 2002-07-08 | 2008-02-26 | Qunano Ab | Nanostructures and methods for manufacturing the same |
| KR101064318B1 (ko) * | 2003-04-04 | 2011-09-14 | 큐나노에이비 | Ｐｎ 접합을 갖는 나노위스커 및 이의 가공 방법 |
| CN100527445C (zh) * | 2003-06-12 | 2009-08-12 | 西瑞卡公司 | 自由载流子的稳态非平衡分布、使用其的光子能量向上转换和红外成像系统 |
| US8691011B2 (en) | 2006-03-08 | 2014-04-08 | Qunano Ab | Method for metal-free synthesis of epitaxial semiconductor nanowires on si |
| US7893476B2 (en) * | 2006-09-15 | 2011-02-22 | Imec | Tunnel effect transistors based on silicon nanowires |
| US8003883B2 (en) * | 2007-01-11 | 2011-08-23 | General Electric Company | Nanowall solar cells and optoelectronic devices |
| US8183566B2 (en) * | 2007-03-01 | 2012-05-22 | Hewlett-Packard Development Company, L.P. | Hetero-crystalline semiconductor device and method of making same |
| CN101675527A (zh) * | 2007-04-09 | 2010-03-17 | 加利福尼亚大学董事会 | 用于高效率串叠型太阳能电池的低电阻隧道结 |
| EP2168167B1 (en) * | 2007-06-19 | 2019-04-10 | QuNano AB | Nanowire-based solar cell structure |
| US7960715B2 (en) * | 2008-04-24 | 2011-06-14 | University Of Iowa Research Foundation | Semiconductor heterostructure nanowire devices |
| US8242353B2 (en) * | 2009-03-16 | 2012-08-14 | International Business Machines Corporation | Nanowire multijunction solar cell |
-
2010
- 2010-10-22 CN CN2010800588460A patent/CN102656700A/zh active Pending
- 2010-10-22 KR KR1020127013173A patent/KR20120099441A/ko not_active Ceased
- 2010-10-22 EP EP10825300.6A patent/EP2491595A4/en not_active Withdrawn
- 2010-10-22 JP JP2012535166A patent/JP2013508966A/ja active Pending
- 2010-10-22 US US13/503,314 patent/US20120199187A1/en not_active Abandoned
- 2010-10-22 WO PCT/SE2010/051147 patent/WO2011049529A1/en not_active Ceased
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