JP2010500741A5 - - Google Patents
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- Publication number
- JP2010500741A5 JP2010500741A5 JP2009523114A JP2009523114A JP2010500741A5 JP 2010500741 A5 JP2010500741 A5 JP 2010500741A5 JP 2009523114 A JP2009523114 A JP 2009523114A JP 2009523114 A JP2009523114 A JP 2009523114A JP 2010500741 A5 JP2010500741 A5 JP 2010500741A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- iii
- group
- compound
- nucleation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 150000001875 compounds Chemical class 0.000 claims 37
- 230000006911 nucleation Effects 0.000 claims 34
- 238000010899 nucleation Methods 0.000 claims 34
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 17
- 239000000758 substrate Substances 0.000 claims 16
- 229910052732 germanium Inorganic materials 0.000 claims 13
- 238000000034 method Methods 0.000 claims 12
- 229910021478 group 5 element Inorganic materials 0.000 claims 5
- 239000004065 semiconductor Substances 0.000 claims 5
- 238000009792 diffusion process Methods 0.000 claims 4
- 230000005693 optoelectronics Effects 0.000 claims 4
- 229910017115 AlSb Inorganic materials 0.000 claims 3
- 229910005542 GaSb Inorganic materials 0.000 claims 3
- 229910000673 Indium arsenide Inorganic materials 0.000 claims 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 3
- 229910052782 aluminium Inorganic materials 0.000 claims 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 3
- 229910052787 antimony Inorganic materials 0.000 claims 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 3
- 229910052785 arsenic Inorganic materials 0.000 claims 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 3
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 2
- 230000007547 defect Effects 0.000 claims 2
- 229910021480 group 4 element Inorganic materials 0.000 claims 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US82213806P | 2006-08-11 | 2006-08-11 | |
| PCT/CA2007/001278 WO2008017143A1 (en) | 2006-08-11 | 2007-07-19 | Method of fabricating semiconductor devices on a group iv substrate with controlled interface properties and diffusion tails |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010500741A JP2010500741A (ja) | 2010-01-07 |
| JP2010500741A5 true JP2010500741A5 (enExample) | 2010-09-02 |
Family
ID=39032571
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009523114A Pending JP2010500741A (ja) | 2006-08-11 | 2007-07-19 | 界面特性及び拡散テールが制御された半導体デバイスをｉｖ族基板上に製作する方法 |
Country Status (14)
| Country | Link |
|---|---|
| US (2) | US7872252B2 (enExample) |
| EP (2) | EP2428981A1 (enExample) |
| JP (1) | JP2010500741A (enExample) |
| CN (1) | CN101501819B (enExample) |
| AT (1) | ATE546828T1 (enExample) |
| AU (1) | AU2007283383B2 (enExample) |
| BR (1) | BRPI0714267A2 (enExample) |
| CA (1) | CA2657504A1 (enExample) |
| CY (1) | CY1112913T1 (enExample) |
| ES (1) | ES2383872T3 (enExample) |
| IL (1) | IL196477A (enExample) |
| MX (1) | MX2009001151A (enExample) |
| PT (1) | PT2050124E (enExample) |
| WO (1) | WO2008017143A1 (enExample) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100319764A1 (en) * | 2009-06-23 | 2010-12-23 | Solar Junction Corp. | Functional Integration Of Dilute Nitrides Into High Efficiency III-V Solar Cells |
| AU2010278623B2 (en) * | 2009-07-29 | 2015-09-03 | Aton Optronics Inc | Solar cell and method of fabrication thereof |
| US20110114163A1 (en) * | 2009-11-18 | 2011-05-19 | Solar Junction Corporation | Multijunction solar cells formed on n-doped substrates |
| FR2954947B1 (fr) * | 2010-01-04 | 2012-01-20 | Acta Alga | Photobioreacteur en milieu ferme pour la culture de micro-organismes photosynthetiques |
| US20110232730A1 (en) | 2010-03-29 | 2011-09-29 | Solar Junction Corp. | Lattice matchable alloy for solar cells |
| US9214580B2 (en) | 2010-10-28 | 2015-12-15 | Solar Junction Corporation | Multi-junction solar cell with dilute nitride sub-cell having graded doping |
| US8962991B2 (en) | 2011-02-25 | 2015-02-24 | Solar Junction Corporation | Pseudomorphic window layer for multijunction solar cells |
| US20120261721A1 (en) * | 2011-04-18 | 2012-10-18 | Raytheon Company | Semiconductor structures having nucleation layer to prevent interfacial charge for column iii-v materials on column iv or column iv-iv materials |
| US8766087B2 (en) | 2011-05-10 | 2014-07-01 | Solar Junction Corporation | Window structure for solar cell |
| US10263129B2 (en) | 2011-08-29 | 2019-04-16 | Iqe Plc | Multijunction photovoltaic device having SiGe(Sn) and (In)GaAsNBi cells |
| US9018517B2 (en) * | 2011-11-07 | 2015-04-28 | International Business Machines Corporation | Silicon heterojunction photovoltaic device with wide band gap emitter |
| WO2013074530A2 (en) | 2011-11-15 | 2013-05-23 | Solar Junction Corporation | High efficiency multijunction solar cells |
| WO2013113090A1 (en) * | 2012-01-31 | 2013-08-08 | Cyrium Technologies Incorporated | Method of fabricating semiconductor devices on a group iv substrate with controlled interface properties and diffusion tails |
| US9153724B2 (en) | 2012-04-09 | 2015-10-06 | Solar Junction Corporation | Reverse heterojunctions for solar cells |
| GB201213673D0 (en) | 2012-08-01 | 2012-09-12 | Ucl Business Plc | Semiconductor device and fabrication method |
| EP3761375A1 (en) | 2014-02-05 | 2021-01-06 | Array Photonics, Inc. | Monolithic multijunction power converter |
| WO2016105397A1 (en) | 2014-12-23 | 2016-06-30 | Intel Corporation | Iii-v semiconductor alloys for use in the subfin of non-planar semiconductor devices and methods of forming the same |
| CN107430989B (zh) * | 2014-12-23 | 2021-03-12 | 英特尔公司 | 耐受扩散的iii-v族半导体异质结构及包括其的器件 |
| US20170069721A1 (en) | 2015-09-08 | 2017-03-09 | M/A-Com Technology Solutions Holdings, Inc. | Parasitic channel mitigation using silicon carbide diffusion barrier regions |
| US9627473B2 (en) * | 2015-09-08 | 2017-04-18 | Macom Technology Solutions Holdings, Inc. | Parasitic channel mitigation in III-nitride material semiconductor structures |
| US20170110613A1 (en) | 2015-10-19 | 2017-04-20 | Solar Junction Corporation | High efficiency multijunction photovoltaic cells |
| WO2018034812A1 (en) | 2016-08-19 | 2018-02-22 | Solar Junction Corporation | Dilute nitride devices with active group iv substrate and controlled dopant diffusion at the nucleation layer-substrate interface |
| US10930808B2 (en) | 2017-07-06 | 2021-02-23 | Array Photonics, Inc. | Hybrid MOCVD/MBE epitaxial growth of high-efficiency lattice-matched multijunction solar cells |
| WO2019067553A1 (en) | 2017-09-27 | 2019-04-04 | Solar Junction Corporation | SHORT-LENGTH WAVELENGTH INFRARED OPTOELECTRONIC DEVICES HAVING DILUTED NITRIDE LAYER |
| KR102045989B1 (ko) * | 2018-03-14 | 2019-11-18 | 한국과학기술연구원 | 상호 확산을 사용한 반도체 소자 및 이를 제조하는 방법 |
| US11038023B2 (en) | 2018-07-19 | 2021-06-15 | Macom Technology Solutions Holdings, Inc. | III-nitride material semiconductor structures on conductive silicon substrates |
| EP3834224A1 (en) | 2018-08-09 | 2021-06-16 | Array Photonics, Inc. | Hydrogen diffusion barrier for hybrid semiconductor growth |
| EP3939085A1 (en) | 2019-03-11 | 2022-01-19 | Array Photonics, Inc. | Short wavelength infrared optoelectronic devices having graded or stepped dilute nitride active regions |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4910167A (en) * | 1987-11-13 | 1990-03-20 | Kopin Corporation | III-V Semiconductor growth initiation on silicon using TMG and TEG |
| US5130269A (en) * | 1988-04-27 | 1992-07-14 | Fujitsu Limited | Hetero-epitaxially grown compound semiconductor substrate and a method of growing the same |
| US4963949A (en) * | 1988-09-30 | 1990-10-16 | The United States Of America As Represented Of The United States Department Of Energy | Substrate structures for InP-based devices |
| JP2557546B2 (ja) * | 1990-03-30 | 1996-11-27 | 三菱電機株式会社 | 半導体装置の製造方法 |
| US6996150B1 (en) * | 1994-09-14 | 2006-02-07 | Rohm Co., Ltd. | Semiconductor light emitting device and manufacturing method therefor |
| US6188090B1 (en) * | 1995-08-31 | 2001-02-13 | Fujitsu Limited | Semiconductor device having a heteroepitaxial substrate |
| US6233265B1 (en) * | 1998-07-31 | 2001-05-15 | Xerox Corporation | AlGaInN LED and laser diode structures for pure blue or green emission |
| US6380601B1 (en) * | 1999-03-29 | 2002-04-30 | Hughes Electronics Corporation | Multilayer semiconductor structure with phosphide-passivated germanium substrate |
| US6329088B1 (en) * | 1999-06-24 | 2001-12-11 | Advanced Technology Materials, Inc. | Silicon carbide epitaxial layers grown on substrates offcut towards <1{overscore (1)}00> |
| US6340788B1 (en) * | 1999-12-02 | 2002-01-22 | Hughes Electronics Corporation | Multijunction photovoltaic cells and panels using a silicon or silicon-germanium active substrate cell for space and terrestrial applications |
| US7339109B2 (en) * | 2000-06-20 | 2008-03-04 | Emcore Corporation | Apparatus and method for optimizing the efficiency of germanium junctions in multi-junction solar cells |
| US20020042727A1 (en) * | 2000-10-05 | 2002-04-11 | Takafumi Soramoto | Compensation-granting system and method and server thereof |
| US6660660B2 (en) * | 2000-10-10 | 2003-12-09 | Asm International, Nv. | Methods for making a dielectric stack in an integrated circuit |
| SG98018A1 (en) * | 2000-12-08 | 2003-08-20 | Inst Materials Research & Eng | A method of fabricating a semiconductor structure having quantum wires and a semiconductor device including such structure |
| US6849882B2 (en) * | 2001-05-11 | 2005-02-01 | Cree Inc. | Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer |
| US6813296B2 (en) * | 2002-04-25 | 2004-11-02 | Massachusetts Institute Of Technology | GaSb-clad mid-infrared semiconductor laser |
| US7122733B2 (en) * | 2002-09-06 | 2006-10-17 | The Boeing Company | Multi-junction photovoltaic cell having buffer layers for the growth of single crystal boron compounds |
| US7122734B2 (en) * | 2002-10-23 | 2006-10-17 | The Boeing Company | Isoelectronic surfactant suppression of threading dislocations in metamorphic epitaxial layers |
| US6900067B2 (en) * | 2002-12-11 | 2005-05-31 | Lumileds Lighting U.S., Llc | Growth of III-nitride films on mismatched substrates without conventional low temperature nucleation layers |
| US7812249B2 (en) * | 2003-04-14 | 2010-10-12 | The Boeing Company | Multijunction photovoltaic cell grown on high-miscut-angle substrate |
| US7001791B2 (en) * | 2003-04-14 | 2006-02-21 | University Of Florida | GaN growth on Si using ZnO buffer layer |
| CA2551123A1 (en) * | 2004-01-20 | 2005-07-28 | Cyrium Technologies Incorporated | Solar cell with epitaxially grown quantum dot material |
| US7432175B2 (en) * | 2005-01-07 | 2008-10-07 | Huffaker Diana L | Quantum dots nucleation layer of lattice mismatched epitaxy |
| KR100616686B1 (ko) * | 2005-06-10 | 2006-08-28 | 삼성전기주식회사 | 질화물계 반도체 장치의 제조 방법 |
-
2007
- 2007-07-11 US US11/776,163 patent/US7872252B2/en not_active Expired - Fee Related
- 2007-07-19 EP EP11192479A patent/EP2428981A1/en not_active Withdrawn
- 2007-07-19 AU AU2007283383A patent/AU2007283383B2/en not_active Ceased
- 2007-07-19 BR BRPI0714267-6A patent/BRPI0714267A2/pt not_active IP Right Cessation
- 2007-07-19 JP JP2009523114A patent/JP2010500741A/ja active Pending
- 2007-07-19 CA CA002657504A patent/CA2657504A1/en not_active Abandoned
- 2007-07-19 WO PCT/CA2007/001278 patent/WO2008017143A1/en not_active Ceased
- 2007-07-19 EP EP07763924A patent/EP2050124B1/en active Active
- 2007-07-19 ES ES07763924T patent/ES2383872T3/es active Active
- 2007-07-19 AT AT07763924T patent/ATE546828T1/de active
- 2007-07-19 MX MX2009001151A patent/MX2009001151A/es active IP Right Grant
- 2007-07-19 CN CN200780029521.8A patent/CN101501819B/zh not_active Expired - Fee Related
- 2007-07-19 PT PT07763924T patent/PT2050124E/pt unknown
-
2009
- 2009-01-13 IL IL196477A patent/IL196477A/en not_active IP Right Cessation
-
2010
- 2010-12-03 US US12/959,960 patent/US8124958B2/en not_active Expired - Fee Related
-
2012
- 2012-05-21 CY CY20121100462T patent/CY1112913T1/el unknown
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