JP2010118667A - 2つの変性層を備えた4接合型反転変性多接合太陽電池 - Google Patents
2つの変性層を備えた4接合型反転変性多接合太陽電池 Download PDFInfo
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Abstract
【解決手段】第一バンドギャップを有する上方の第一太陽補助電池と、該第一太陽補助電池に隣接して、該第一バンドギャップより小さい第二バンドギャップを有する第二太陽補助電池と、該第二太陽補助電池に隣接し、該第二バンドギャップより大きい第三バンドギャップを有する第一の勾配中間層と、該第一の勾配中間層に隣接し、該第二バンドギャップより小さい第四バンドギャップを有し、該第二補助電池に対して格子非整合状態の第三太陽補助電池とを含む多接合型太陽電池である。第二の勾配中間層は、該第三太陽補助電池に隣接して、該第四バンドギャップより大きい第五バンドギャップを有し、下方の第四太陽補助電池は、該第二の勾配中間層に隣接して、該第四バンドギャップより小さい第六バンドギャップを有し、該第三補助電池に対して格子非整合であるように構成される。
【選択図】図2
Description
本発明は、米国空軍により与えられた契約書番号FA9453−06−C−0345による政府の援助を得て完成されたものである。
本出願は、2008年11月10日付けの係属中の米国特許出願一連番号12/267,812に関連する。
太陽電池とも呼ばれる光電池から得られる太陽エネルギー発電電力は、主としてシリコン半導体技術により提供されてきた。しかしながら過去数年間においては、宇宙用装置のためのIII−V族化合物半導体多接合太陽電池の大量製産により、宇宙用での使用だけでなく地上設置式太陽エネルギー発電装置の技術が加速度的に発達してきた。シリコンと比較して、III−V族化合物半導体多接合装置は、製造は一層複雑になるが、高いエネルギー変換効率及び全体的に高い放射線耐性を有する。典型的な商業用III−V族化合物半導体多接合太陽電池は、1つの太陽、空気質量0(AM0)、照度の下で、27%を越えるエネルギー効率を有するが、シリコン技術は、最も効率的なものでも、一般的には同様の条件の下で約18%の効率しか得られない。強い太陽照射の下で(例えば、500倍)、商業的に入手可能な地上設置式装置におけるIII−V族化合物半導体多接合太陽電池は(AM1.5で)、37%を越えるエネルギー効率を有する。シリコン太陽電池と比較して、III−V族化合物半導体太陽電池の高い変換効率は、部分的に、異なるバンドギャップエネルギーを有する複数の光起電性領域の使用を通じて、入射放射線のスペクトル分光を行い、各々の領域からの電流を蓄積する能力によるものである。
102 バッファー層
103 エッチストップ層
104 接触層
105 ウインドウ層
106 エミッター層
107 ベース層
108 BSF層
109 トンネルダイオード層
110 ウインドウ層
Claims (20)
- 第一バンドギャップを有する上方の第一太陽補助電池と、
前記第一太陽補助電池に隣接し、前記第一バンドギャップより小さい第二バンドギャップを有する第二太陽補助電池と、
前記第二太陽補助電池に隣接し、前記第二バンドギャップより大きい第三バンドギャップを有する第一の勾配中間層と、
前記第一の勾配中間層に隣接し、前記第二バンドギャップより小さい第四バンドギャップを有し、前記第二補助電池に対して格子非整合状態である第三太陽補助電池と、
前記第三太陽補助電池に隣接し、前記第四バンドギャップより大きい第五バンドギャップを有する第二の勾配中間層と、
前記第二の勾配中間層に隣接し、前記第四バンドギャップより小さい第六バンドギャップを有し、前記第三補助電池に対して格子非整合状態である下方の第四太陽補助電池と、
から構成されていることを特徴とする多接合太陽電池。 - 前記第一の勾配中間層は、1つの側において前記第二補助電池と、他方の側において前記第三補助電池と、格子整合するように組成的に勾配付けされていることを特徴とする請求項1に記載の多接合太陽電池。
- 前記第二の勾配中間層は、1つの側において前記第三補助電池と、他方の側において前記底部の第四補助電池と、格子整合するように組成的に勾配付けされることを特徴とする請求項1に記載の多接合太陽電池。
- 前記第一の勾配中間層は、前記平面内格子パラメータが、前記第二補助電池のそれより大きいか又はこれと等しく、前記第三補助電池のそれより小さいか又はこれと等しいという制約、及び、バンドギャップエネルギーが前記第二補助電池及び前記第三補助電池のそれよりも大きいという制約のもとで、As、P、N、SbベースのIII−V族化合物半導体のいずれかにより構成されていることを特徴とする請求項1に記載の多接合太陽電池。
- 前記第一の勾配中間層は、前記平面内格子パラメータが、前記第三補助電池のそれより大きいか又はこれと等しく、前記底部の第四補助電池のそれより小さいか又はこれと等しいという制約、及び、バンドギャップエネルギーが前記第三補助電池及び前記第四補助電池のそれよりも大きいという制約のもとで、As、P、N、SbベースのIII−V族化合物半導体のいずれかにより構成されていることを特徴とする請求項1に記載の多接合太陽電池。
- 前記第一及び第二の勾配中間層は、(InxGa1-x)yAl1-yAsで構成され、ここで、x及びyは各々の中間層の前記バンドギャップが、その厚さ全体で一定となるように選択されていることを特徴とする請求項1に記載の多接合太陽電池。
- 前記第一の勾配中間層の前記バンドギャップは、1.5eVで一定していることを特徴とする請求項6に記載の多接合太陽電池。
- 前記第二の勾配中間層の前記バンドギャップは、1.1eVで一定していることを特徴とする請求項6に記載の多接合太陽電池。
- 前記上方の太陽電池は、InGaPエミッター層とInGaPベース層で構成され、前記第二補助電池は、InGaPエミッター層とGaAsベース層で構成され、前記第三補助電池は、InGaPエミッター層とInGaAsベース層で構成され、更に前記底部の第四補助電池は、InGaAsベース層と前記ベースと格子整合するInGaAsエミッター層で構成されていることを特徴とする請求項1に記載の多接合太陽電池。
- 前記下方の第四補助電池は、およそ0.6eVから0.8eVの範囲のバンドギャップを有し、前記第三補助電池は、およそ0.9eVから1.1eVの範囲のバンドギャップを有し、前記第二補助電池は、およそ1.35eVから1.45eVの範囲のバンドギャップを有し、前記上方の補助電池は、1.8eVから2.1eVの範囲のバンドギャップを有することを特徴とする請求項1に記載の多接合太陽電池。
- 第一基板を準備し、
前記第一基板に、第一バンドギャップを有する上方の第一太陽補助電池を形成し、
前記第一太陽補助電池に隣接して、前記第一バンドギャップより小さい第二バンドギャップを有する第二太陽補助電池を形成し、
前記第二太陽補助電池に隣接して、前記第二バンドギャップより大きい第三バンドギャップを有する第一の勾配中間層を形成し、
前記第一の勾配中間層に隣接して、前記第二バンドギャップより小さい第四バンドギャップを有し、前記第二補助電池に対して格子非整合状態の第三太陽補助電池を形成し、
前記第三太陽補助電池に隣接して、前記第四バンドギャップより大きい第五バンドギャップを有する第二の勾配中間層を形成し、
前記第二の勾配中間層に隣接して、前記第四バンドギャップより小さい第六バンドギャップを有し、前記第三補助電池に対して格子非整合状態の下方の第四太陽補助電池を形成し、
第四太陽補助電池の上部に代りの基板を取り付けて、
前記第一基板を取り除く、
段階からなることを特徴とする太陽電池の製造方法。 - 前記下方の第四補助電池は0.6eVから0.8eVの範囲のバンドギャップを有し、前記第三補助電池は0.9eVから1.1eVの範囲のバンドギャップを有し、前記第二補助電池は1.35eVから1.45eVの範囲のバンドギャップを有し、前記第一補助電池は1.8eVから2.1eVのバンドギャップを有することを特徴とする請求項11に記載の方法。
- 前記第一基板は、ヒ化ガリウム又はゲルマニウムで構成され、前記代りの基板は、サファイア、GaAs、Ge又はSiで構成されることを特徴とする請求項11に記載の方法。
- 前記第一の勾配中間層は、1つの側において前記第二補助電池と、もう一方の側において前記第三補助電池と、格子整合するように組成的に勾配付けされ、前記第二の勾配中間層は、1つの側において前記第三補助電池と、もう一方の側において前記底部の第四補助電池と、格子整合するように組成的に勾配付けされることを特徴とする請求項11に記載の方法。
- 前記第一の勾配中間層は、前記平面内格子パラメータが、前記第二補助電池のそれより大きいか又はこれと等しく、前記第三補助電池のそれより小さいか又はこれと等しいという制約、及び、バンドギャップエネルギーが前記第二補助電池及び前記第三補助電池のそれよりも大きいという制約のもとで、As、P、N、SbベースのIII−V族化合物半導体のいずれかで構成されることを特徴とする請求項11に記載の方法。
- 前記第一の勾配中間層は、前記平面内格子パラメータが、前記第三補助電池のそれより大きいか又はこれと等しく、前記底部の第四補助電池のそれより小さいか又はこれと等しいという制約、及び、バンドギャップエネルギーが前記第三補助電池及び前記第四補助電池のそれよりも大きいという制約のもとで、As、P、N、SbベースのIII−V族化合物半導体のいずれかにより構成されることを特徴とする請求項11に記載の方法。
- 前記第一及び第二の勾配中間層は、(InxGa1-x)yAl1-yAsで構成され、ここで、x及びyは各々の中間層の前記バンドギャップが、その厚さ全体で一定となるように選択されることを特徴とする請求項11に記載の方法。
- 前記第一の勾配中間層の前記バンドギャップは、1.5eVの一定値に維持され、前記第二の勾配中間層の前記バンドギャップは、1.1eVの一定値に維持されることを特徴とする請求項11に記載の方法。
- 前記第一太陽電池はInGaPエミッター層及びInGaPベース層で構成され、前記第二補助電池はInGaPエミッター層とGaAsベース層で構成され、前記第三補助電池はInGaPエミッター層とInGaAsベース層で構成され、更に前記底部の第四補助電池はInGaAsベース層と前記ベースと格子整合するInGaAsエミッター層で構成されることを特徴とする請求項11に記載の方法。
- 第一基板を準備し、
第一の順序の半導体物質層を第一基板上に堆積して第一及び第二太陽電池を形成し、
第一の勾配中間層を前記第一及び第二太陽電池上に堆積し、
第二の勾配中間層と第三及び第四太陽電池を含む第二の順序の半導体物質層を前記第一の勾配中間層に堆積し、
重ねられた前記層の上部に、代りの基板を取り付けて接着し、
前記第一基板を取り除く、
段階からなることを特徴とする太陽電池の製造方法。
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EP2187451A3 (en) | 2014-04-23 |
US20170243997A1 (en) | 2017-08-24 |
EP3333905A1 (en) | 2018-06-13 |
US20100122724A1 (en) | 2010-05-20 |
EP3331033A1 (en) | 2018-06-06 |
TW201027777A (en) | 2010-07-16 |
CN101740647A (zh) | 2010-06-16 |
JP2015073130A (ja) | 2015-04-16 |
TWI594449B (zh) | 2017-08-01 |
US9691929B2 (en) | 2017-06-27 |
EP2187451A2 (en) | 2010-05-19 |
CN101740647B (zh) | 2015-12-09 |
EP3331033B1 (en) | 2021-02-17 |
EP3333905B1 (en) | 2021-02-17 |
EP2187451B1 (en) | 2017-09-27 |
US20150107658A1 (en) | 2015-04-23 |
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