JP2013541224A - 傾斜ドーピングを有する希薄窒化物サブセルを備えた多接合型太陽電池 - Google Patents
傾斜ドーピングを有する希薄窒化物サブセルを備えた多接合型太陽電池 Download PDFInfo
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Abstract
【選択図】図5
Description
Claims (15)
- エミッター、ベースおよびエミッターベース接合を有する少なくとも1つの希薄窒化物サブセルを備える多接合型太陽電池であって、前記サブセルが、前記エミッターおよび前記ベースの少なくとも一方において深さ位置に依存するドーピングプロファイルを有することで、前記ドーパント濃度が、前記エミッター−ベース接合において最低となり、前記エミッター−ベース接合からの距離によって増大することを特徴とする多接合型太陽電池。
- 前記ドーパント濃度が実質的に1x1015/cm3と1x1019/cm3の間にある、請求項1に記載の多接合型太陽電池。
- 前記ドーピングが、前記エミッター−ベース接合において最小となり、前記エミッター−ベース接合から離れた距離の少なくとも一部にわたって指数的に増大する、請求項1に記載の多接合型太陽電池。
- 前記ドーピングが、前記エミッター−ベース接合において最小となり、前記エミッター−ベース接合から離れた距離の少なくとも一部にわたって線形に増大する、請求項1に記載の多接合型太陽電池。
- 前記サブセルの前記ベースが、前記ベースにおける深さ位置に関数依存するドーピングを有し、前記ドーピングが、前記エミッター−ベース接合において最小となり、前記エミッター−ベース接合から離れた距離によって増大し、前記増大の割合が、前記太陽電池の効率を改善させるように選択される、請求項1に記載の太陽電池。
- 前記サブセルの前記エミッターが、前記エミッターにおける深さ位置に関数依存するドーピングを有し、前記ドーピングが、前記エミッター−ベース接合において最小となり、前記エミッター−ベース接合から離れた距離によって増大し、前記増大の割合が、前記太陽電池の効率を改善させるように選択される、請求項1に記載の太陽電池。
- 少なくとも3つのサブセル、すなわち第1サブセル、第2サブセルおよび第3サブセルを有し、
前記第1サブセルが、前記希薄窒化物サブセルであり、前記第1サブセルが、下にある基板に格子整合され、前記希薄窒化物サブセルが、前記第1、第2および第3サブセルの中で最小である第1バンドギャップを有し、
前記第2サブセルが、前記第1サブセル上に格子整合され、前記第1バンドギャップより高い第2バンドギャップを有し、
前記第3サブセルが、前記第2サブセル上に形成され、前記第2サブセルに格子整合され、前記第3サブセルが、一番上のサブセルであり、前記第1バンドギャップおよび前記第2バンドギャップより高い第3バンドギャップを有する、請求項1に記載の太陽電池。 - 前記ベースが、第1ドーピングサブ領域と、第2ドーピングサブ領域を有し、前記第1ドーピングサブ領域が、前記エミッター−ベース接合に隣接し、一定のドーピングを有し、前記第2ドーピングサブ領域が、前記エミッター−ベース接合から離れた距離によって増大するドーピングを有する、請求項1に記載の多接合型太陽電池。
- 少なくとも1つの第1サブセル、第2サブセル、第3サブセルおよび第4サブセルを有し、
前記第1サブセルが、最小である第1バンドギャップを有し、
前記第2サブセルが、前記希薄窒化物サブセルであり、前記希薄窒化物サブセルが、下にある隣接する構造体に実質的に格子整合され、前記希薄窒化物サブセルが、前記第1バンドギャップより大きなバンドギャップを有し、
前記第3サブセルが、前記第2サブセルに格子整合され、前記第2サブセルの前記バンドギャップより大きな第3バンドギャップを有し、
前記第4サブセルが、前記第3サブセルに格子整合され、前記第4サブセルが、前記第3サブセルより大きなバンドギャップを有する、請求項1に記載の多接合型太陽電池。 - エミッター、ベースおよびエミッター−ベース接合を有する少なくとも1つのサブセルを備えた多接合型太陽電池であって、前記ベースが、第1サブ領域と第2サブ領域を有し、前記第1ドーピングサブ領域が前記エミッター−ベース接合に隣接し、ドーピングを持たず、前記第2ドーピングサブ領域が、前記エミッター−ベース接合から離れた距離によって増大するドーピングを有する多接合型太陽電池。
- 前記少なくとも1つのサブセルが、希薄窒化物サブセルである、請求項10に記載の多接合型太陽電池。
- 傾斜ドーピングプロファイルを形成するための方法であって、
ドーパントを含む大気中で多接合型太陽電池の希薄窒化物サブセルのベースを成長させるステップであって、前記ドーパントが、成長ステップにおいて最大値から最小値まで変化する濃度であることにより、前記ベース内に傾斜ドーピングプロファイルを形成することを特徴とする方法。 - 前記希薄窒化物サブセルを含む前記多接合型太陽電池をアニーリングするステップを含む、請求項12に記載の方法。
- 傾斜ドーピングプロファイルを形成するための方法であって、
ベースを成長させた後、多接合型太陽電池の希薄窒化物サブセルのエミッターを成長させるステップであって、ドーパントを含む大気中で前記エミッターを成長させ、前記ドーパントが、成長ステップにおいて最小値から最大値まで変化する濃度であることにより、前記エミッター内に傾斜ドーピングプロファイルを形成することを特徴とする方法。 - 前記希薄窒化物サブセルを含む前記多接合型太陽電池をアニーリングするステップを含む、請求項14に記載の方法。
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US12/914,710 US9214580B2 (en) | 2010-10-28 | 2010-10-28 | Multi-junction solar cell with dilute nitride sub-cell having graded doping |
US12/914,710 | 2010-10-28 | ||
PCT/US2011/036486 WO2012057874A1 (en) | 2010-10-28 | 2011-05-13 | Multi-junction solar cell with dilute nitride sub-cell having graded doping |
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CN (1) | CN103210497B (ja) |
DE (1) | DE112011103244T5 (ja) |
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JP2021527940A (ja) * | 2018-06-18 | 2021-10-14 | アルタ デバイセズ, インコーポレイテッドAlta Devices, Inc. | 格子整合希薄窒化物接合を組み込んだ薄膜フレキシブル多接合光電子デバイスおよびその製造方法 |
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JP2012004557A (ja) * | 2010-06-15 | 2012-01-05 | Sharp Corp | 高効率InGaAsN太陽電池、およびその製造方法 |
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JP2021527940A (ja) * | 2018-06-18 | 2021-10-14 | アルタ デバイセズ, インコーポレイテッドAlta Devices, Inc. | 格子整合希薄窒化物接合を組み込んだ薄膜フレキシブル多接合光電子デバイスおよびその製造方法 |
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US20160118526A1 (en) | 2016-04-28 |
TW201230360A (en) | 2012-07-16 |
WO2012057874A1 (en) | 2012-05-03 |
CN103210497A (zh) | 2013-07-17 |
DE112011103244T5 (de) | 2013-08-14 |
CN103210497B (zh) | 2016-09-21 |
US10355159B2 (en) | 2019-07-16 |
US9214580B2 (en) | 2015-12-15 |
US20120103403A1 (en) | 2012-05-03 |
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