JP2009147309A - 反転型メタモルフィック多接合ソーラーセルにおいて指数関数的にドープした複数の層 - Google Patents
反転型メタモルフィック多接合ソーラーセルにおいて指数関数的にドープした複数の層 Download PDFInfo
- Publication number
- JP2009147309A JP2009147309A JP2008269598A JP2008269598A JP2009147309A JP 2009147309 A JP2009147309 A JP 2009147309A JP 2008269598 A JP2008269598 A JP 2008269598A JP 2008269598 A JP2008269598 A JP 2008269598A JP 2009147309 A JP2009147309 A JP 2009147309A
- Authority
- JP
- Japan
- Prior art keywords
- subcell
- layer
- base
- solar
- solar cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010410 layer Substances 0.000 claims abstract description 126
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 239000000463 material Substances 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 13
- 239000004065 semiconductor Substances 0.000 claims abstract description 12
- 239000011229 interlayer Substances 0.000 claims abstract description 8
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 240000002329 Inga feuillei Species 0.000 claims description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 3
- 210000004027 cell Anatomy 0.000 description 89
- 238000012545 processing Methods 0.000 description 25
- 230000004888 barrier function Effects 0.000 description 9
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000006798 recombination Effects 0.000 description 6
- 238000005215 recombination Methods 0.000 description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 description 3
- 230000003667 anti-reflective effect Effects 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000006911 nucleation Effects 0.000 description 3
- 238000010899 nucleation Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000006059 cover glass Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0687—Multiple junction or tandem solar cells
- H01L31/06875—Multiple junction or tandem solar cells inverted grown metamorphic [IMM] multiple junction solar cells, e.g. III-V compounds inverted metamorphic multi-junction cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03042—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0693—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Life Sciences & Earth Sciences (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
【解決手段】上部サブセル、中間サブセル及び下部サブセルを含む多接合ソーラーセルを製造する方法は、半導体材料のエピタキシャル成長のために第1の基板を準備し、第1のバンドギャップを有する第1のソーラーサブセルを基板上に形成し、第1のバンドギャップより小さい第2のバンドギャップを有する第2のソーラーサブセルを第1のソーラーサブセルの上に形成し、第2のバンドギャップより大きい第3のバンドギャップを有するグレーディングインターレイヤを第2のサブセル上に形成し、第2のバンドギャップより小さい第4のバンドギャップを有する第3のソーラーサブセルをグレーディングインターレイヤの上に形成して、第3のサブセルが第2のサブセルに対して格子不整合となるようにし、前記ベースのうちの少なくとも1つが指数関数的にドープされたプロフィールを有するようにする。
【選択図】図4
Description
E=(kT/q(1/λ))(exp[−xb/λ])
但し、kは、ボルツマン定数、Tは、絶対温度(°ケルビン)、qは、電荷の絶対値、λは、ドーピング減衰のパラメータ特性である。
102:核生成層
103:バッファ層
104:エッチング停止層
105:接触層
106:窓層
107:n+エミッタ層
108:pベース層
109:BSF層
110:p型及びn型層(トンネルダイオード層)
111:窓層
112:n+エミッタ層
113:pベース層
114:BSF層
115:p++/n++トンネルダイオード
116a:バリア層
116:グレーディングインターレイヤ(メタモルフィックバッファ層)
116b:バリア層
117:窓層
118:n+エミッタ層
119:pベース層
120:BSF層
121:p+接触層
122:金属接触層
123:接着剤層
124:代用基板
501:格子線
502:相互接続バス線
503:接触パッド
510:メサ
Claims (11)
- 上部サブセルと中間サブセルと下部又は底部サブセルとを含む多接合ソーラーセルを製造する方法であって、
半導体材料のエピタキシャル成長のために第1の基板を準備するステップと、
第1のバンドギャップを有し、ベース及びエミッタを有する第1のソーラーサブセルを前記基板上に形成するステップと、
前記第1のバンドギャップより小さい第2のバンドギャップを有し、ベース及びエミッタを有する第2のソーラーサブセルを前記第1のソーラーサブセルの上に形成するステップと、
前記第2のバンドギャップより大きい第3のバンドギャップを有するグレーディングインターレイヤを前記第2のサブセルの上に形成するステップと、
前記第2のバンドギャップより小さい第4のバンドギャップを有し、ベース及びエミッタを有する第3のソーラーサブセルを前記グレーディングインターレイヤの上に形成して、この第3のサブセルが前記第2のサブセルに対して格子不整合となるようにするステップと、
を含み、
前記ベースのうちの少なくとも1つが指数関数的にドープされたプロファイルを有するものである、ことを特徴とする方法。 - 前記第1のソーラーサブセルのベースが、ベース−エミッタ接合の付近の1x1016/cm3から、隣接層の付近の1x1018/cm3までの指数関数的ドーピンググラデーションを有する、請求項1に記載の方法。
- 前記第2のソーラーサブセルのベースが、ベース−エミッタ接合の付近の1x1016/cm3から、隣接層の付近の1x1018/cm3までの指数関数的ドーピンググラデーションを有する、請求項1に記載の方法。
- 前記第3のソーラーサブセルのベースが、ベース−エミッタ接合の付近の1x1016/cm3から、隣接層の付近の1x1018/cm3までの指数関数的ドーピンググラデーションを有する、請求項1に記載の方法。
- 少なくとも1つの前記ソーラーサブセルのエミッタ層が、ベース−エミッタ接合の付近の5x1017/cm3から、隣接層の付近の5x1018/cm3までの増加するドーピンググラデーションを有する、請求項1に記載の方法。
- 前記第3のソーラーサブセルが、底部サブセルであり、前記指数関数的ドーピンググラデーションが、上位サブセルの短絡電流にほぼ等しいレベルまでの短絡電流の増加を生じさせる、請求項4に記載の方法。
- 前記第1の基板がGaAsで構成される、請求項1に記載の方法。
- 前記第1のソーラーサブセルが、InGa(Al)Pエミッタ領域と、InGa(Al)Pベース領域とにより構成される、請求項1に記載の方法。
- 前記第2のソーラーサブセルは、InGaPエミッタ領域と、GaAsベース領域とで構成される、請求項1に記載の方法。
- 前記グレーディングインターレイヤがInGaAlAsにより構成される、請求項1に記載の方法。
- ソーラーセルを製造する方法であって、
第1の基板を準備するステップと、
前記第1の基板上に半導体材料の一連の層を堆積して、指数関数的ドーピングを伴う少なくとも1つのベース層を含むソーラーセルを形成するステップと、
前記一連の層の頂部に代用基板を装着するステップと、
前記第1の基板を除去するステップと、
を含むことを特徴とする方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/956,069 US20090155952A1 (en) | 2007-12-13 | 2007-12-13 | Exponentially Doped Layers In Inverted Metamorphic Multijunction Solar Cells |
US11/956,069 | 2007-12-13 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013105060A Division JP5456923B2 (ja) | 2007-12-13 | 2013-05-17 | 反転型メタモルフィック多接合ソーラーセルにおいて指数関数的にドープした複数の層 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2009147309A true JP2009147309A (ja) | 2009-07-02 |
JP2009147309A5 JP2009147309A5 (ja) | 2011-08-18 |
JP5318522B2 JP5318522B2 (ja) | 2013-10-16 |
Family
ID=40622227
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008269598A Active JP5318522B2 (ja) | 2007-12-13 | 2008-10-20 | 反転型メタモルフィック多接合ソーラーセルにおいて指数関数的にドープした複数の層 |
JP2013105060A Active JP5456923B2 (ja) | 2007-12-13 | 2013-05-17 | 反転型メタモルフィック多接合ソーラーセルにおいて指数関数的にドープした複数の層 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013105060A Active JP5456923B2 (ja) | 2007-12-13 | 2013-05-17 | 反転型メタモルフィック多接合ソーラーセルにおいて指数関数的にドープした複数の層 |
Country Status (5)
Country | Link |
---|---|
US (2) | US20090155952A1 (ja) |
EP (1) | EP2073276B8 (ja) |
JP (2) | JP5318522B2 (ja) |
CN (1) | CN101459204A (ja) |
TW (1) | TWI355091B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012533896A (ja) * | 2009-07-21 | 2012-12-27 | チェシ−チョントロ・エレットロテクニコ・スペリメンターレ・イタリアーノ・ジャチント・モッタ・エッセ・ピー・アー | 変換効率の高い光電池 |
JP2013541224A (ja) * | 2010-10-28 | 2013-11-07 | ソーラー・ジャンクション・コーポレイション | 傾斜ドーピングを有する希薄窒化物サブセルを備えた多接合型太陽電池 |
Families Citing this family (99)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100229913A1 (en) * | 2009-01-29 | 2010-09-16 | Emcore Solar Power, Inc. | Contact Layout and String Interconnection of Inverted Metamorphic Multijunction Solar Cells |
US20090078309A1 (en) * | 2007-09-24 | 2009-03-26 | Emcore Corporation | Barrier Layers In Inverted Metamorphic Multijunction Solar Cells |
US20100122724A1 (en) * | 2008-11-14 | 2010-05-20 | Emcore Solar Power, Inc. | Four Junction Inverted Metamorphic Multijunction Solar Cell with Two Metamorphic Layers |
US10381501B2 (en) | 2006-06-02 | 2019-08-13 | Solaero Technologies Corp. | Inverted metamorphic multijunction solar cell with multiple metamorphic layers |
US20100229926A1 (en) | 2009-03-10 | 2010-09-16 | Emcore Solar Power, Inc. | Four Junction Inverted Metamorphic Multijunction Solar Cell with a Single Metamorphic Layer |
US9117966B2 (en) | 2007-09-24 | 2015-08-25 | Solaero Technologies Corp. | Inverted metamorphic multijunction solar cell with two metamorphic layers and homojunction top cell |
US20090078310A1 (en) * | 2007-09-24 | 2009-03-26 | Emcore Corporation | Heterojunction Subcells In Inverted Metamorphic Multijunction Solar Cells |
US9634172B1 (en) | 2007-09-24 | 2017-04-25 | Solaero Technologies Corp. | Inverted metamorphic multijunction solar cell with multiple metamorphic layers |
US10170656B2 (en) | 2009-03-10 | 2019-01-01 | Solaero Technologies Corp. | Inverted metamorphic multijunction solar cell with a single metamorphic layer |
US20100047959A1 (en) * | 2006-08-07 | 2010-02-25 | Emcore Solar Power, Inc. | Epitaxial Lift Off on Film Mounted Inverted Metamorphic Multijunction Solar Cells |
US20100203730A1 (en) * | 2009-02-09 | 2010-08-12 | Emcore Solar Power, Inc. | Epitaxial Lift Off in Inverted Metamorphic Multijunction Solar Cells |
US20110041898A1 (en) * | 2009-08-19 | 2011-02-24 | Emcore Solar Power, Inc. | Back Metal Layers in Inverted Metamorphic Multijunction Solar Cells |
US20100093127A1 (en) * | 2006-12-27 | 2010-04-15 | Emcore Solar Power, Inc. | Inverted Metamorphic Multijunction Solar Cell Mounted on Metallized Flexible Film |
US8895342B2 (en) | 2007-09-24 | 2014-11-25 | Emcore Solar Power, Inc. | Heterojunction subcells in inverted metamorphic multijunction solar cells |
US20100233838A1 (en) * | 2009-03-10 | 2010-09-16 | Emcore Solar Power, Inc. | Mounting of Solar Cells on a Flexible Substrate |
US10381505B2 (en) | 2007-09-24 | 2019-08-13 | Solaero Technologies Corp. | Inverted metamorphic multijunction solar cells including metamorphic layers |
US20090272430A1 (en) * | 2008-04-30 | 2009-11-05 | Emcore Solar Power, Inc. | Refractive Index Matching in Inverted Metamorphic Multijunction Solar Cells |
US20100012175A1 (en) | 2008-07-16 | 2010-01-21 | Emcore Solar Power, Inc. | Ohmic n-contact formed at low temperature in inverted metamorphic multijunction solar cells |
US20090272438A1 (en) * | 2008-05-05 | 2009-11-05 | Emcore Corporation | Strain Balanced Multiple Quantum Well Subcell In Inverted Metamorphic Multijunction Solar Cell |
US20100012174A1 (en) * | 2008-07-16 | 2010-01-21 | Emcore Corporation | High band gap contact layer in inverted metamorphic multijunction solar cells |
US9287438B1 (en) * | 2008-07-16 | 2016-03-15 | Solaero Technologies Corp. | Method for forming ohmic N-contacts at low temperature in inverted metamorphic multijunction solar cells with contaminant isolation |
US8263853B2 (en) * | 2008-08-07 | 2012-09-11 | Emcore Solar Power, Inc. | Wafer level interconnection of inverted metamorphic multijunction solar cells |
US7741146B2 (en) | 2008-08-12 | 2010-06-22 | Emcore Solar Power, Inc. | Demounting of inverted metamorphic multijunction solar cells |
US8034697B2 (en) * | 2008-09-19 | 2011-10-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Formation of devices by epitaxial layer overgrowth |
US8236600B2 (en) * | 2008-11-10 | 2012-08-07 | Emcore Solar Power, Inc. | Joining method for preparing an inverted metamorphic multijunction solar cell |
US20100122764A1 (en) * | 2008-11-14 | 2010-05-20 | Emcore Solar Power, Inc. | Surrogate Substrates for Inverted Metamorphic Multijunction Solar Cells |
US9018521B1 (en) | 2008-12-17 | 2015-04-28 | Solaero Technologies Corp. | Inverted metamorphic multijunction solar cell with DBR layer adjacent to the top subcell |
US10541349B1 (en) | 2008-12-17 | 2020-01-21 | Solaero Technologies Corp. | Methods of forming inverted multijunction solar cells with distributed Bragg reflector |
US7960201B2 (en) * | 2009-01-29 | 2011-06-14 | Emcore Solar Power, Inc. | String interconnection and fabrication of inverted metamorphic multijunction solar cells |
US8778199B2 (en) | 2009-02-09 | 2014-07-15 | Emoore Solar Power, Inc. | Epitaxial lift off in inverted metamorphic multijunction solar cells |
US20100206365A1 (en) * | 2009-02-19 | 2010-08-19 | Emcore Solar Power, Inc. | Inverted Metamorphic Multijunction Solar Cells on Low Density Carriers |
US20100229933A1 (en) * | 2009-03-10 | 2010-09-16 | Emcore Solar Power, Inc. | Inverted Metamorphic Multijunction Solar Cells with a Supporting Coating |
US9018519B1 (en) | 2009-03-10 | 2015-04-28 | Solaero Technologies Corp. | Inverted metamorphic multijunction solar cells having a permanent supporting substrate |
US20100282288A1 (en) * | 2009-05-06 | 2010-11-11 | Emcore Solar Power, Inc. | Solar Cell Interconnection on a Flexible Substrate |
US20100282305A1 (en) | 2009-05-08 | 2010-11-11 | Emcore Solar Power, Inc. | Inverted Multijunction Solar Cells with Group IV/III-V Hybrid Alloys |
US20100319764A1 (en) * | 2009-06-23 | 2010-12-23 | Solar Junction Corp. | Functional Integration Of Dilute Nitrides Into High Efficiency III-V Solar Cells |
US8263856B2 (en) * | 2009-08-07 | 2012-09-11 | Emcore Solar Power, Inc. | Inverted metamorphic multijunction solar cells with back contacts |
US8575471B2 (en) * | 2009-08-31 | 2013-11-05 | Alliance For Sustainable Energy, Llc | Lattice matched semiconductor growth on crystalline metallic substrates |
US8961687B2 (en) * | 2009-08-31 | 2015-02-24 | Alliance For Sustainable Energy, Llc | Lattice matched crystalline substrates for cubic nitride semiconductor growth |
DE102009049397B4 (de) | 2009-10-14 | 2018-09-06 | Solaero Technologies Corp. | Herstellungsverfahren mit Surrogatsubstrat für invertierte metamorphische Multijunction-Solarzellen |
US9337360B1 (en) | 2009-11-16 | 2016-05-10 | Solar Junction Corporation | Non-alloyed contacts for III-V based solar cells |
US20110114163A1 (en) * | 2009-11-18 | 2011-05-19 | Solar Junction Corporation | Multijunction solar cells formed on n-doped substrates |
DE102009057020B4 (de) * | 2009-12-03 | 2021-04-29 | Solaero Technologies Corp. | Wachstumssubstrate für invertierte metamorphe Multijunction-Solarzellen |
US8507365B2 (en) * | 2009-12-21 | 2013-08-13 | Alliance For Sustainable Energy, Llc | Growth of coincident site lattice matched semiconductor layers and devices on crystalline substrates |
US20110232730A1 (en) | 2010-03-29 | 2011-09-29 | Solar Junction Corp. | Lattice matchable alloy for solar cells |
US9214586B2 (en) | 2010-04-30 | 2015-12-15 | Solar Junction Corporation | Semiconductor solar cell package |
US8187907B1 (en) | 2010-05-07 | 2012-05-29 | Emcore Solar Power, Inc. | Solder structures for fabrication of inverted metamorphic multijunction solar cells |
TWI414073B (zh) * | 2010-07-20 | 2013-11-01 | Cesi Ct Elettrotecnico Sperimentale Italiano Giacinto Motta S P A | 高轉換效率光伏電池 |
KR20120034965A (ko) | 2010-10-04 | 2012-04-13 | 삼성전자주식회사 | 태양 전지 |
TWI427807B (zh) * | 2010-10-28 | 2014-02-21 | Atomic Energy Council | 能增加光電流收集效率的太陽能電池結構 |
US9425249B2 (en) | 2010-12-01 | 2016-08-23 | Alliance For Sustainable Energy, Llc | Coincident site lattice-matched growth of semiconductors on substrates using compliant buffer layers |
US9041027B2 (en) | 2010-12-01 | 2015-05-26 | Alliance For Sustainable Energy, Llc | Methods of producing free-standing semiconductors using sacrificial buffer layers and recyclable substrates |
US8859892B2 (en) | 2011-02-03 | 2014-10-14 | Solar Junction Corporation | Integrated semiconductor solar cell package |
US8962988B2 (en) | 2011-02-03 | 2015-02-24 | Solar Junction Corporation | Integrated semiconductor solar cell package |
US8962991B2 (en) | 2011-02-25 | 2015-02-24 | Solar Junction Corporation | Pseudomorphic window layer for multijunction solar cells |
US8766087B2 (en) | 2011-05-10 | 2014-07-01 | Solar Junction Corporation | Window structure for solar cell |
CN102244114A (zh) * | 2011-06-22 | 2011-11-16 | 厦门市三安光电科技有限公司 | 一种高倍聚光多结太阳能电池及其制备方法 |
JP5758257B2 (ja) * | 2011-09-30 | 2015-08-05 | シャープ株式会社 | 化合物半導体太陽電池製造用積層体、化合物半導体太陽電池およびその製造方法 |
WO2013074530A2 (en) | 2011-11-15 | 2013-05-23 | Solar Junction Corporation | High efficiency multijunction solar cells |
US9263611B2 (en) | 2011-11-17 | 2016-02-16 | Solar Junction Corporation | Method for etching multi-layer epitaxial material |
US9153724B2 (en) | 2012-04-09 | 2015-10-06 | Solar Junction Corporation | Reverse heterojunctions for solar cells |
CN102651417B (zh) * | 2012-05-18 | 2014-09-03 | 中国科学院苏州纳米技术与纳米仿生研究所 | 三结级联太阳能电池及其制备方法 |
CN102779890A (zh) * | 2012-08-14 | 2012-11-14 | 厦门乾照光电股份有限公司 | 一种倒置三结太阳能电池及其制造方法 |
US9142615B2 (en) | 2012-10-10 | 2015-09-22 | Solar Junction Corporation | Methods and apparatus for identifying and reducing semiconductor failures |
US10153388B1 (en) | 2013-03-15 | 2018-12-11 | Solaero Technologies Corp. | Emissivity coating for space solar cell arrays |
US20170062642A1 (en) * | 2013-04-29 | 2017-03-02 | Solaero Technologies Corp. | Inverted metamorphic multijunction solar cell |
US9853180B2 (en) | 2013-06-19 | 2017-12-26 | Solaero Technologies Corp. | Inverted metamorphic multijunction solar cell with surface passivation |
ITMI20131297A1 (it) * | 2013-08-01 | 2015-02-02 | Cesi Ct Elettrotecnico Sperim Entale Italian | Cella fotovoltaica con banda proibita variabile |
US9768326B1 (en) | 2013-08-07 | 2017-09-19 | Solaero Technologies Corp. | Fabrication of solar cells with electrically conductive polyimide adhesive |
US9214594B2 (en) | 2013-08-07 | 2015-12-15 | Solaero Technologies Corp. | Fabrication of solar cells with electrically conductive polyimide adhesive |
EP3103142B1 (en) | 2014-02-05 | 2020-08-19 | Array Photonics, Inc. | Monolithic multijunction power converter |
US9758261B1 (en) | 2015-01-15 | 2017-09-12 | Solaero Technologies Corp. | Inverted metamorphic multijunction solar cell with lightweight laminate substrate |
US10256359B2 (en) | 2015-10-19 | 2019-04-09 | Solaero Technologies Corp. | Lattice matched multijunction solar cell assemblies for space applications |
US9985161B2 (en) | 2016-08-26 | 2018-05-29 | Solaero Technologies Corp. | Multijunction metamorphic solar cell for space applications |
US9935209B2 (en) * | 2016-01-28 | 2018-04-03 | Solaero Technologies Corp. | Multijunction metamorphic solar cell for space applications |
US10361330B2 (en) | 2015-10-19 | 2019-07-23 | Solaero Technologies Corp. | Multijunction solar cell assemblies for space applications |
US20170110613A1 (en) | 2015-10-19 | 2017-04-20 | Solar Junction Corporation | High efficiency multijunction photovoltaic cells |
US10270000B2 (en) | 2015-10-19 | 2019-04-23 | Solaero Technologies Corp. | Multijunction metamorphic solar cell assembly for space applications |
US10403778B2 (en) * | 2015-10-19 | 2019-09-03 | Solaero Technologies Corp. | Multijunction solar cell assembly for space applications |
CN105304764B (zh) * | 2015-11-11 | 2017-12-05 | 厦门乾照光电股份有限公司 | 一种倒置结构太阳能电池制作方法 |
US9929300B2 (en) | 2015-11-13 | 2018-03-27 | Solaero Technologies Corp. | Multijunction solar cells with electrically conductive polyimide adhesive |
CN106784127B (zh) * | 2015-11-20 | 2019-02-01 | 北京创昱科技有限公司 | 一种双结薄膜太阳能电池组件及其制作方法 |
CN106784108B (zh) * | 2015-11-20 | 2019-05-31 | 北京创昱科技有限公司 | 一种双结薄膜太阳能电池组件及其制作方法 |
US10090420B2 (en) | 2016-01-22 | 2018-10-02 | Solar Junction Corporation | Via etch method for back contact multijunction solar cells |
US11316053B2 (en) * | 2016-08-26 | 2022-04-26 | Sol Aero Technologies Corp. | Multijunction solar cell assembly |
WO2017205100A1 (en) | 2016-05-23 | 2017-11-30 | Solar Junction Corporation | Exponential doping in lattice-matched dilute nitride photovoltaic cells |
US10263134B1 (en) | 2016-05-25 | 2019-04-16 | Solaero Technologies Corp. | Multijunction solar cells having an indirect high band gap semiconductor emitter layer in the upper solar subcell |
US9680035B1 (en) | 2016-05-27 | 2017-06-13 | Solar Junction Corporation | Surface mount solar cell with integrated coverglass |
US10700230B1 (en) * | 2016-10-14 | 2020-06-30 | Solaero Technologies Corp. | Multijunction metamorphic solar cell for space applications |
US10636926B1 (en) | 2016-12-12 | 2020-04-28 | Solaero Technologies Corp. | Distributed BRAGG reflector structures in multijunction solar cells |
KR101931712B1 (ko) * | 2016-12-28 | 2018-12-24 | 엘지전자 주식회사 | 화합물 반도체 태양전지 |
US10930808B2 (en) | 2017-07-06 | 2021-02-23 | Array Photonics, Inc. | Hybrid MOCVD/MBE epitaxial growth of high-efficiency lattice-matched multijunction solar cells |
EP3669402A1 (en) | 2017-09-27 | 2020-06-24 | Array Photonics, Inc. | Short wavelength infrared optoelectronic devices having a dilute nitride layer |
US20190181289A1 (en) | 2017-12-11 | 2019-06-13 | Solaero Technologies Corp. | Multijunction solar cells |
US11011660B1 (en) | 2018-07-17 | 2021-05-18 | Solaero Technologies Corp. | Inverted metamorphic multijunction solar cell |
EP3939085A1 (en) | 2019-03-11 | 2022-01-19 | Array Photonics, Inc. | Short wavelength infrared optoelectronic devices having graded or stepped dilute nitride active regions |
EP3980586A1 (en) * | 2019-06-04 | 2022-04-13 | Solar Junction Corporation | Dilute nitride optical absorption layers having graded doping |
US12046693B2 (en) * | 2021-09-01 | 2024-07-23 | Maxeon Solar Pte. Ltd. | Solar device fabrication limiting power conversion losses |
CN114335208B (zh) * | 2022-03-16 | 2022-06-10 | 南昌凯迅光电股份有限公司 | 一种新型砷化镓太阳电池及制作方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59115575A (ja) * | 1982-12-23 | 1984-07-04 | Semiconductor Energy Lab Co Ltd | 光電変換装置 |
JPS63244887A (ja) * | 1987-03-31 | 1988-10-12 | Sharp Corp | アモルフアス太陽電池 |
JPH0472773A (ja) * | 1990-07-13 | 1992-03-06 | Hitachi Cable Ltd | 多層接合型太陽電池 |
Family Cites Families (84)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3488834A (en) * | 1965-10-20 | 1970-01-13 | Texas Instruments Inc | Microelectronic circuit formed in an insulating substrate and method of making same |
US3964155A (en) * | 1972-02-23 | 1976-06-22 | The United States Of America As Represented By The Secretary Of The Navy | Method of planar mounting of silicon solar cells |
US4001864A (en) * | 1976-01-30 | 1977-01-04 | Gibbons James F | Semiconductor p-n junction solar cell and method of manufacture |
US4255211A (en) * | 1979-12-31 | 1981-03-10 | Chevron Research Company | Multilayer photovoltaic solar cell with semiconductor layer at shorting junction interface |
DE3036260A1 (de) * | 1980-09-26 | 1982-04-29 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zur herstellung von elektrischen kontakten an einer silizium-solarzelle |
US4338480A (en) * | 1980-12-29 | 1982-07-06 | Varian Associates, Inc. | Stacked multijunction photovoltaic converters |
US4881979A (en) * | 1984-08-29 | 1989-11-21 | Varian Associates, Inc. | Junctions for monolithic cascade solar cells and methods |
US4612408A (en) * | 1984-10-22 | 1986-09-16 | Sera Solar Corporation | Electrically isolated semiconductor integrated photodiode circuits and method |
US5217539A (en) * | 1991-09-05 | 1993-06-08 | The Boeing Company | III-V solar cells and doping processes |
US5053083A (en) * | 1989-05-08 | 1991-10-01 | The Board Of Trustees Of The Leland Stanford Junior University | Bilevel contact solar cells |
US5021360A (en) * | 1989-09-25 | 1991-06-04 | Gte Laboratories Incorporated | Method of farbicating highly lattice mismatched quantum well structures |
US5322572A (en) * | 1989-11-03 | 1994-06-21 | The United States Of America As Represented By The United States Department Of Energy | Monolithic tandem solar cell |
US5019177A (en) * | 1989-11-03 | 1991-05-28 | The United States Of America As Represented By The United States Department Of Energy | Monolithic tandem solar cell |
US5342453A (en) * | 1992-11-13 | 1994-08-30 | Midwest Research Institute | Heterojunction solar cell |
US5376185A (en) * | 1993-05-12 | 1994-12-27 | Midwest Research Institute | Single-junction solar cells with the optimum band gap for terrestrial concentrator applications |
DE69435205D1 (de) | 1993-12-14 | 2009-05-28 | Spectrolab Inc | Dünne Halbleitervorrichtung und Herstellungsverfahren |
JP3169497B2 (ja) * | 1993-12-24 | 2001-05-28 | 三菱電機株式会社 | 太陽電池の製造方法 |
US5479032A (en) * | 1994-07-21 | 1995-12-26 | Trustees Of Princeton University | Multiwavelength infrared focal plane array detector |
US6281426B1 (en) * | 1997-10-01 | 2001-08-28 | Midwest Research Institute | Multi-junction, monolithic solar cell using low-band-gap materials lattice matched to GaAs or Ge |
US6482672B1 (en) * | 1997-11-06 | 2002-11-19 | Essential Research, Inc. | Using a critical composition grading technique to deposit InGaAs epitaxial layers on InP substrates |
US5944913A (en) * | 1997-11-26 | 1999-08-31 | Sandia Corporation | High-efficiency solar cell and method for fabrication |
US6166318A (en) * | 1998-03-03 | 2000-12-26 | Interface Studies, Inc. | Single absorber layer radiated energy conversion device |
US6300557B1 (en) * | 1998-10-09 | 2001-10-09 | Midwest Research Institute | Low-bandgap double-heterostructure InAsP/GaInAs photovoltaic converters |
US6239354B1 (en) * | 1998-10-09 | 2001-05-29 | Midwest Research Institute | Electrical isolation of component cells in monolithically interconnected modules |
US6165873A (en) * | 1998-11-27 | 2000-12-26 | Nec Corporation | Process for manufacturing a semiconductor integrated circuit device |
JP3657143B2 (ja) * | 1999-04-27 | 2005-06-08 | シャープ株式会社 | 太陽電池及びその製造方法 |
US6252287B1 (en) * | 1999-05-19 | 2001-06-26 | Sandia Corporation | InGaAsN/GaAs heterojunction for multi-junction solar cells |
US6340788B1 (en) * | 1999-12-02 | 2002-01-22 | Hughes Electronics Corporation | Multijunction photovoltaic cells and panels using a silicon or silicon-germanium active substrate cell for space and terrestrial applications |
US6815736B2 (en) * | 2001-02-09 | 2004-11-09 | Midwest Research Institute | Isoelectronic co-doping |
US20030070707A1 (en) * | 2001-10-12 | 2003-04-17 | King Richard Roland | Wide-bandgap, lattice-mismatched window layer for a solar energy conversion device |
US6660928B1 (en) * | 2002-04-02 | 2003-12-09 | Essential Research, Inc. | Multi-junction photovoltaic cell |
US6690041B2 (en) * | 2002-05-14 | 2004-02-10 | Global Solar Energy, Inc. | Monolithically integrated diodes in thin-film photovoltaic devices |
US20060162768A1 (en) * | 2002-05-21 | 2006-07-27 | Wanlass Mark W | Low bandgap, monolithic, multi-bandgap, optoelectronic devices |
US8067687B2 (en) * | 2002-05-21 | 2011-11-29 | Alliance For Sustainable Energy, Llc | High-efficiency, monolithic, multi-bandgap, tandem photovoltaic energy converters |
US6794631B2 (en) * | 2002-06-07 | 2004-09-21 | Corning Lasertron, Inc. | Three-terminal avalanche photodiode |
US7122734B2 (en) * | 2002-10-23 | 2006-10-17 | The Boeing Company | Isoelectronic surfactant suppression of threading dislocations in metamorphic epitaxial layers |
US7071407B2 (en) * | 2002-10-31 | 2006-07-04 | Emcore Corporation | Method and apparatus of multiplejunction solar cell structure with high band gap heterojunction middle cell |
US6951819B2 (en) * | 2002-12-05 | 2005-10-04 | Blue Photonics, Inc. | High efficiency, monolithic multijunction solar cells containing lattice-mismatched materials and methods of forming same |
US7812249B2 (en) * | 2003-04-14 | 2010-10-12 | The Boeing Company | Multijunction photovoltaic cell grown on high-miscut-angle substrate |
US8101851B2 (en) | 2003-07-22 | 2012-01-24 | Akzo Nobel N.V. | Process for manufacturing a solar cell foil using a temporary substrate |
US20050211291A1 (en) * | 2004-03-23 | 2005-09-29 | The Boeing Company | Solar cell assembly |
US8227689B2 (en) * | 2004-06-15 | 2012-07-24 | The Boeing Company | Solar cells having a transparent composition-graded buffer layer |
WO2006015185A2 (en) * | 2004-07-30 | 2006-02-09 | Aonex Technologies, Inc. | GaInP/GaAs/Si TRIPLE JUNCTION SOLAR CELL ENABLED BY WAFER BONDING AND LAYER TRANSFER |
US7846759B2 (en) * | 2004-10-21 | 2010-12-07 | Aonex Technologies, Inc. | Multi-junction solar cells and methods of making same using layer transfer and bonding techniques |
FR2878076B1 (fr) | 2004-11-17 | 2007-02-23 | St Microelectronics Sa | Amincissement d'une plaquette semiconductrice |
US7166520B1 (en) * | 2005-08-08 | 2007-01-23 | Silicon Genesis Corporation | Thin handle substrate method and structure for fabricating devices using one or more films provided by a layer transfer process |
US8637759B2 (en) * | 2005-12-16 | 2014-01-28 | The Boeing Company | Notch filter for triple junction solar cells |
US7294869B2 (en) * | 2006-04-04 | 2007-11-13 | International Business Machines Corporation | Silicon germanium emitter |
US20090078308A1 (en) * | 2007-09-24 | 2009-03-26 | Emcore Corporation | Thin Inverted Metamorphic Multijunction Solar Cells with Rigid Support |
US20090078310A1 (en) * | 2007-09-24 | 2009-03-26 | Emcore Corporation | Heterojunction Subcells In Inverted Metamorphic Multijunction Solar Cells |
US20100229913A1 (en) * | 2009-01-29 | 2010-09-16 | Emcore Solar Power, Inc. | Contact Layout and String Interconnection of Inverted Metamorphic Multijunction Solar Cells |
US20100186804A1 (en) * | 2009-01-29 | 2010-07-29 | Emcore Solar Power, Inc. | String Interconnection of Inverted Metamorphic Multijunction Solar Cells on Flexible Perforated Carriers |
US20100229926A1 (en) * | 2009-03-10 | 2010-09-16 | Emcore Solar Power, Inc. | Four Junction Inverted Metamorphic Multijunction Solar Cell with a Single Metamorphic Layer |
US8536445B2 (en) * | 2006-06-02 | 2013-09-17 | Emcore Solar Power, Inc. | Inverted metamorphic multijunction solar cells |
US20090078309A1 (en) * | 2007-09-24 | 2009-03-26 | Emcore Corporation | Barrier Layers In Inverted Metamorphic Multijunction Solar Cells |
US20100122724A1 (en) * | 2008-11-14 | 2010-05-20 | Emcore Solar Power, Inc. | Four Junction Inverted Metamorphic Multijunction Solar Cell with Two Metamorphic Layers |
US20100203730A1 (en) * | 2009-02-09 | 2010-08-12 | Emcore Solar Power, Inc. | Epitaxial Lift Off in Inverted Metamorphic Multijunction Solar Cells |
US20080029151A1 (en) * | 2006-08-07 | 2008-02-07 | Mcglynn Daniel | Terrestrial solar power system using III-V semiconductor solar cells |
US20100047959A1 (en) * | 2006-08-07 | 2010-02-25 | Emcore Solar Power, Inc. | Epitaxial Lift Off on Film Mounted Inverted Metamorphic Multijunction Solar Cells |
US20080149173A1 (en) * | 2006-12-21 | 2008-06-26 | Sharps Paul R | Inverted metamorphic solar cell with bypass diode |
US20080245409A1 (en) * | 2006-12-27 | 2008-10-09 | Emcore Corporation | Inverted Metamorphic Solar Cell Mounted on Flexible Film |
US20110041898A1 (en) * | 2009-08-19 | 2011-02-24 | Emcore Solar Power, Inc. | Back Metal Layers in Inverted Metamorphic Multijunction Solar Cells |
US20080185038A1 (en) * | 2007-02-02 | 2008-08-07 | Emcore Corporation | Inverted metamorphic solar cell with via for backside contacts |
US20090038679A1 (en) * | 2007-08-09 | 2009-02-12 | Emcore Corporation | Thin Multijunction Solar Cells With Plated Metal OHMIC Contact and Support |
US20090078311A1 (en) * | 2007-09-24 | 2009-03-26 | Emcore Corporation | Surfactant Assisted Growth in Barrier Layers In Inverted Metamorphic Multijunction Solar Cells |
US20100233838A1 (en) * | 2009-03-10 | 2010-09-16 | Emcore Solar Power, Inc. | Mounting of Solar Cells on a Flexible Substrate |
US20090223554A1 (en) * | 2008-03-05 | 2009-09-10 | Emcore Corporation | Dual Sided Photovoltaic Package |
US20090229658A1 (en) * | 2008-03-13 | 2009-09-17 | Emcore Corporation | Non-Isoelectronic Surfactant Assisted Growth In Inverted Metamorphic Multijunction Solar Cells |
US20090229662A1 (en) * | 2008-03-13 | 2009-09-17 | Emcore Corporation | Off-Cut Substrates In Inverted Metamorphic Multijunction Solar Cells |
US20100012175A1 (en) * | 2008-07-16 | 2010-01-21 | Emcore Solar Power, Inc. | Ohmic n-contact formed at low temperature in inverted metamorphic multijunction solar cells |
US20090272430A1 (en) * | 2008-04-30 | 2009-11-05 | Emcore Solar Power, Inc. | Refractive Index Matching in Inverted Metamorphic Multijunction Solar Cells |
US20090272438A1 (en) * | 2008-05-05 | 2009-11-05 | Emcore Corporation | Strain Balanced Multiple Quantum Well Subcell In Inverted Metamorphic Multijunction Solar Cell |
US20090288703A1 (en) * | 2008-05-20 | 2009-11-26 | Emcore Corporation | Wide Band Gap Window Layers In Inverted Metamorphic Multijunction Solar Cells |
US20100012174A1 (en) * | 2008-07-16 | 2010-01-21 | Emcore Corporation | High band gap contact layer in inverted metamorphic multijunction solar cells |
US8263853B2 (en) * | 2008-08-07 | 2012-09-11 | Emcore Solar Power, Inc. | Wafer level interconnection of inverted metamorphic multijunction solar cells |
US7741146B2 (en) * | 2008-08-12 | 2010-06-22 | Emcore Solar Power, Inc. | Demounting of inverted metamorphic multijunction solar cells |
US8236600B2 (en) * | 2008-11-10 | 2012-08-07 | Emcore Solar Power, Inc. | Joining method for preparing an inverted metamorphic multijunction solar cell |
US20100122764A1 (en) * | 2008-11-14 | 2010-05-20 | Emcore Solar Power, Inc. | Surrogate Substrates for Inverted Metamorphic Multijunction Solar Cells |
US20100147366A1 (en) * | 2008-12-17 | 2010-06-17 | Emcore Solar Power, Inc. | Inverted Metamorphic Multijunction Solar Cells with Distributed Bragg Reflector |
US7960201B2 (en) * | 2009-01-29 | 2011-06-14 | Emcore Solar Power, Inc. | String interconnection and fabrication of inverted metamorphic multijunction solar cells |
US20100206365A1 (en) * | 2009-02-19 | 2010-08-19 | Emcore Solar Power, Inc. | Inverted Metamorphic Multijunction Solar Cells on Low Density Carriers |
US20100229933A1 (en) * | 2009-03-10 | 2010-09-16 | Emcore Solar Power, Inc. | Inverted Metamorphic Multijunction Solar Cells with a Supporting Coating |
US20100282288A1 (en) * | 2009-05-06 | 2010-11-11 | Emcore Solar Power, Inc. | Solar Cell Interconnection on a Flexible Substrate |
US8263856B2 (en) * | 2009-08-07 | 2012-09-11 | Emcore Solar Power, Inc. | Inverted metamorphic multijunction solar cells with back contacts |
-
2007
- 2007-12-13 US US11/956,069 patent/US20090155952A1/en not_active Abandoned
-
2008
- 2008-08-07 US US12/187,454 patent/US7727795B2/en active Active
- 2008-08-26 TW TW097132608A patent/TWI355091B/zh not_active IP Right Cessation
- 2008-09-10 CN CNA2008101495330A patent/CN101459204A/zh active Pending
- 2008-10-20 JP JP2008269598A patent/JP5318522B2/ja active Active
- 2008-12-11 EP EP08021551.0A patent/EP2073276B8/en active Active
-
2013
- 2013-05-17 JP JP2013105060A patent/JP5456923B2/ja active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59115575A (ja) * | 1982-12-23 | 1984-07-04 | Semiconductor Energy Lab Co Ltd | 光電変換装置 |
JPS63244887A (ja) * | 1987-03-31 | 1988-10-12 | Sharp Corp | アモルフアス太陽電池 |
JPH0472773A (ja) * | 1990-07-13 | 1992-03-06 | Hitachi Cable Ltd | 多層接合型太陽電池 |
Non-Patent Citations (1)
Title |
---|
JPN6009048726; M.W.Wanlass et al.: 'LATTICE-MISMATCHED APPROACHES FOR HIGH-PERFORMANCE, III-V PHOTOVOLTAIC ENERGY CONVERTERS' Conf. Rec. IEEE Photovoltaic Spec. Conf. Vol.31, 2005, p.530-535, IEEE * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012533896A (ja) * | 2009-07-21 | 2012-12-27 | チェシ−チョントロ・エレットロテクニコ・スペリメンターレ・イタリアーノ・ジャチント・モッタ・エッセ・ピー・アー | 変換効率の高い光電池 |
JP2013541224A (ja) * | 2010-10-28 | 2013-11-07 | ソーラー・ジャンクション・コーポレイション | 傾斜ドーピングを有する希薄窒化物サブセルを備えた多接合型太陽電池 |
Also Published As
Publication number | Publication date |
---|---|
US20090155952A1 (en) | 2009-06-18 |
CN101459204A (zh) | 2009-06-17 |
US20090155951A1 (en) | 2009-06-18 |
EP2073276B8 (en) | 2019-03-06 |
US7727795B2 (en) | 2010-06-01 |
JP2013165299A (ja) | 2013-08-22 |
JP5318522B2 (ja) | 2013-10-16 |
TW200926426A (en) | 2009-06-16 |
JP5456923B2 (ja) | 2014-04-02 |
TWI355091B (en) | 2011-12-21 |
EP2073276A3 (en) | 2012-09-19 |
EP2073276A2 (en) | 2009-06-24 |
EP2073276B1 (en) | 2018-11-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5456923B2 (ja) | 反転型メタモルフィック多接合ソーラーセルにおいて指数関数的にドープした複数の層 | |
US11677037B2 (en) | Metamorphic layers in multijunction solar cells | |
JP6194283B2 (ja) | 多接合ソーラーセル及びその形成方法 | |
US8987042B2 (en) | Ohmic N-contact formed at low temperature in inverted metamorphic multijunction solar cells | |
JP5425480B2 (ja) | 倒置型メタモルフィック多接合ソーラーセルにおけるヘテロ接合サブセル | |
US7741146B2 (en) | Demounting of inverted metamorphic multijunction solar cells | |
EP1953828B1 (en) | Inverted metamorphic solar cell with via for backside contacts | |
US10700232B1 (en) | Inverted metamorphic multijunction solar cells with doped alpha layer | |
US20080149173A1 (en) | Inverted metamorphic solar cell with bypass diode | |
JP2009076921A (ja) | 多接合ソーラーセル及びその製造方法 | |
JP2015073130A (ja) | 2つの変性層を備えた4接合型反転変性多接合太陽電池 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20090326 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110701 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20110701 |
|
A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20110701 |
|
A975 | Report on accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A971005 Effective date: 20110721 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110801 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20111101 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20111107 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20120326 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120725 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20120801 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20121225 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20130325 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20130328 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130517 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130610 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130710 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5318522 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |