CN106784127B - 一种双结薄膜太阳能电池组件及其制作方法 - Google Patents

一种双结薄膜太阳能电池组件及其制作方法 Download PDF

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CN106784127B
CN106784127B CN201510809748.0A CN201510809748A CN106784127B CN 106784127 B CN106784127 B CN 106784127B CN 201510809748 A CN201510809748 A CN 201510809748A CN 106784127 B CN106784127 B CN 106784127B
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CN106784127A (zh
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顾世海
张庆钊
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Zishi Energy Co ltd
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Beijing Chong Yu Technology Co Ltd
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Abstract

本发明公开了一种双结薄膜太阳能电池组件及其制作方法，电池组件由多个电池单元串联而成，每个电池单元包括选择性生长衬底、底电池和顶电池，顶电池上设有正面金属电极层，选择性生长衬底包括金属基底、图形化的绝缘层和N型微晶锗籽晶层，绝缘层形成于金属基底上，N型微晶锗籽晶层位于绝缘层所形成的图形中；底电池为多晶锗底电池层，顶电池为GaAs电池，多晶锗底电池至顶电池间依次生长有N型的扩散层、N型的缓冲层、隧道结N型区和隧道结P型区，正面金属电极层上形成有减反射层。本发明采用两次选择性生长工艺在金属基底上生长多晶锗/砷化镓薄膜电池结构，合理的禁带匹配设计可使电池转化效率达到32％(AM1.5)，实现太阳能电池的低成本和柔性化。

Description

一种双结薄膜太阳能电池组件及其制作方法
技术领域
本发明涉及一种III-V族双结薄膜电池的制作方法，更具体地讲，涉及一种具有选择性生长衬底的双结薄膜太阳能电池组件及其制作方法。
背景技术
1954年世界上首次发现GaAs材料具有光伏效应，20世纪60年代，Gobat等研制了第1个掺锌GaAs太阳能电池，转化率仅为9％～10％，远低于27％的理论值。最早的单结晶体GaAs电池的做法和现在的单晶硅做法基本相同，但是作为直接禁带半导体，吸收层厚度只需要几个微米，晶体GaAs无疑是巨大的浪费。
20世纪70年代，IBM公司和前苏联Ioffe技术物理所等为代表的研究单位，采用LPE(液相外延)技术引入GaAlAs异质窗口层，降低了GaAs表面的复合速率，使GaAs太阳电池的效率达16％。不久，美国的HRL(Hughes Research Lab)及Spectrolab通过改进LPE技术使得电池的平均效率达到18％，并实现批量生产，开创了高效率砷化镓太阳电池的新时代。
从上世纪80年代后，GaAs太阳能电池技术经历了从LPE到MOCVD，从同质外延到异质外延，从单结到多结叠层结构，从LM结构到IMM结构等几个发展阶段，其发展速度日益加快，效率也不断提高。目前最高效率已达到单结28.8％(alta devices)，三结44.4％(SharpIMM)，四结实验室最高接近50％(Fhg-ISE)
目前锗衬底的三结GaAs电池是研究的重点，双结GaAs电池的研究比较少，通常双结电池都采用GaAs和InGaP作为底电池和顶电的双结电池，用电学和光学低损耗的隧道结连接而成。双结必须要考虑底电池和顶电池的禁带宽度匹配问题，对于AM0来说，最佳的禁带宽度是1.23eV和1.97eV，理论效率可以达到35.8％。目前技术上比较可行的是采用晶格匹配的材料从而放宽了对禁带宽度Eg的要求，而且由于底电池的禁带宽度是1.42eV，顶电池是1.9eV左右，两者的差值只有0.48eV左右，并且底电池的禁带宽度过大，不能吸收900nm以上波长的光线、最终的是造成底电池的光生电流密度小于顶电池的电流密度，导致二者的光生电流不匹配，会严重降低了电池的内量子效率。
双结GaAs电池通常都是GaAs作为衬底、GaAs和InGaP分别作为底电池和顶电池的双结电池，这种双结电池成本比单结GaAs电池高，外延的成本几乎是单结的两倍，但效率比单结的稍微高一点，目前单结最高效率28.8％、双结最高效率30.8％，还需要使用大量的铟作为原材料。
另外，双结GaAs和GaInP的吸收层厚度都比较大，导致电池整体厚度大于10个μm。而柔性薄膜电池的厚度一般要求在1-10μm之间，此类双结电池无法实现电池柔性。
发明内容
为此，本发明为了实现双结III-V族电池的柔性化，降低双结电池的制造成本，提高电池的发电效率。本发明提供了一种具有选择性生长衬底的双结薄膜太阳能电池组件及其制作方法。
为解决上述技术问题，本发明的技术方案为：
一方面，本发明提供了一种双结薄膜太阳能电池组件，由多个电池单元串联而成，每个电池单元包括选择性生长衬底、底电池和顶电池，所述顶电池上设有正面金属电极层，所述选择性生长衬底包括金属基底、图形化的绝缘层和N型微晶锗籽晶层，所述绝缘层形成于所述金属基底上，所述N型微晶锗籽晶层位于所述绝缘层所形成的图形中；所述底电池为多晶锗底电池层，所述顶电池为GaAs电池，所述多晶锗底电池至所述顶电池之间依次生长有N型的扩散层、N型的缓冲层、隧道结N型区和隧道结P型区，所述正面金属电极层上形成有减反射层。
所述缓冲层为N型的InGaAs-GaAs渐变缓冲层，其中铟的比例由1％渐变到0％。
所述的减反射层为MgF2或ZnS减反射层。
所述GaAs电池为在所述隧道结P型区依次外延生长的P型的AlGaAs背场、P型的GaAs基区、N型的AlGaAs发射极、N型的AlGaAs窗口层和N+型的GaAs正面接触层，所述正面金属电极层位于所述正面接触层上。
所述窗口层由所述正面接触层中外露，且其表面形成粗化结构。
另一方面，本发明还提供了一种双结薄膜太阳能电池组件的制作方法，所述方法包括如下步骤：
步骤一，在金属基底上沉积绝缘层，并将绝缘层图形化；
步骤二，在图形化的绝缘层表面沉积一层微晶锗籽晶层，去除绝缘层表面多余的微晶锗材料，制成具有微晶锗籽晶层的选择性生长衬底；
步骤三，将具有微晶锗籽晶层的选择性生长衬底表面沉积一层多晶锗底电池层，制得多晶锗底电池；
步骤四，在多晶锗底电池层表面通过外延生长依次形成扩散层、缓冲层、隧道结和顶电池结构，制得双结电池结构；
步骤五，在顶电池结构上形成图形化的正面金属电极层；
步骤六，将位于多晶锗底电池层上方外延生长的双结电池结构分离成多个独立电池单元；
步骤七，在正面金属电极层上形成减反射层，并依次切割减反射层、多晶锗底电池层和选择性生长衬底，将各电池单元彻底分开；
步骤八，将各电池单元串联后置于上下两柔性衬底之间进行封装，制得薄膜电池组件。
所述步骤一中在金属基底上沉积绝缘层，并将绝缘层图形化，其具体方法是：在金属基底表面沉积1-5μm厚的绝缘层；通过涂布、显影和曝光方法在绝缘层表面形成图形；采用湿法刻蚀工艺去除多余的绝缘层材料，实现绝缘层的图形化。
所述步骤二中采用PECVD设备在图形化的绝缘层表面沉积一层高掺杂P型微晶锗籽晶层，通入纯锗烷和乙硼烷并加热至400～700℃，在反应压强10-2～10Pa、掺杂浓度1-3×1019cm-3下生长形成P型微晶锗籽晶层；采用化学腐蚀抛光工艺去除绝缘层表面上多余的微晶锗籽晶层，制得具有微晶锗籽晶层的选择性生长衬底。
所述步骤四中的在多晶锗底电池层表面通过外延生长依次形成扩散层、缓冲层、隧道结和顶电池结构，其具体方法是：在多晶锗底电池层表面生长N型的InGaP扩散层；通过P元素在高温下向多晶锗底电池层内部进行扩散形成浅的扩散PN结；在PH3的氛围下对扩散层InGaP进行退火处理；在恒温条件下依次生长缓冲层、隧道结、顶电池的背场，基区，发射极、窗口层和正面接触层。
所述步骤五中在双结电池的正面接触层上通过电镀和湿法刻蚀方法形成图形化的正面金属电极层；然后去除未被正面金属电极层覆盖下的正面接触层，露出窗口层并在窗口层表面形成粗化结构。
所述步骤八中的通过铜箔将分离后的各电池串联，然后置于上下两层PET薄膜之间，通过层压机封装形成薄膜柔性电池组件。
本发明的上述技术方案相比现有技术具有以下优点：
A.本发明采用GaAs衬底、多晶锗和GaAs分别作为底电池和顶电池的双结电池，首先，多晶锗底电池的禁带宽度是0.65eV，顶电池GaAs的禁带宽度是1.4eV，该组合更有利于分割太阳能光谱，形成比较合理的电流匹配，而且能够进一步吸收波长在900-2000nm范围内的光线，电池转化效率可达到32％(AM1.5)。
B.本发明采用两次选择性生长工艺在金属基底上生长多晶锗/砷化镓薄膜电池结构，通过更合理的禁带匹配设计来提高电池的效率；采用批量生产更低廉的衬底、更薄的浅结多晶Ge作为底电池、更少的铟材料的使用和金属基板本身作为背面金属电极层、以及通过电镀制作正面电极等技术来降低柔性双结GaAs电池的制造成本，从而实现了多晶锗作为底电池的双结三五族电池的低成本、高效率和柔性化。
C.本发明采用多晶锗底电池的制造成本比GaAs作为底电池低，由于扩散结厚度、底电池的厚度可以小于1微米，且不需要生长复杂的电池结构，只需要通过高温扩散就能形成PN结，制作工艺简单；同时多晶锗作为底电池的价格也要比GaAs作为底电池价格低，且该电池仅缓冲层需要用到材料占比＜1％的铟，可以减少铟这种原材料的限制，因此可大大降低电池制造成本。
D.本发明中的双结薄膜太阳能电池制作方法与现有技术中的制作方法采用相反的制作过程，现有技术中都是先有电池结构再做正面金属电极层和背面金属电极层；而本发明首先完成了金属基底和图形化绝缘层的制作，图形化的绝缘层起到绝缘和反射的作用，而图形化的金属基底可作为背面金属电极层，简化了电池的制作过程。
E.本发明中微晶锗籽晶层主要作用是为多晶锗底电池层的生长提供了一定数量的形核中心，从而形成更好的多晶锗材料，即为二次选择性生长：在金属基底表面常规生长技术只能获得微晶锗材料，为了获得多晶锗需要采用二次选择性生长技术。
附图说明
为了使本发明的内容更容易被清楚的理解，下面根据本发明的具体实施例并结合附图，对本发明作进一步详细的说明，其中
图1是本发明所提供的多晶Ge/GaAs双结电池的外延结构示意图；
图2是具有图形化绝缘层的金属基底结构俯视图；
图3是具有图形化绝缘层的金属基底结构正视图；
图4是在绝缘层的表面生长微晶锗籽晶层的正视图；
图5是本发明所提供的选择性生长衬底的结构示意图；
图6是在选择性生长衬底上形成多晶锗底电池层的结构示意图；
图7是多晶Ge/GaAs双结电池上形成的正面金属电极层结构示意图；
图8是多晶Ge/GaAs双结电池结构示意图；
图9是本发明所提供的双结太阳能电池组件的制作方法框图。
图中：
100-金属基底 102-绝缘层
104-微晶锗籽晶层
106-多晶锗底电池层 105-选择性生长衬底
108-扩散层 110-缓冲层
112-隧道结N型区 114-隧道结P型区
116-背场 118-基区
120-发射极 122-窗口层
124-正面接触层 125-外延结构层
126-顶电池 127-双结电池结构
200-正面金属电极层 300-减反射层。
具体实施方式
为了使本发明的目的、技术方案和优点更加清楚，下面将结合附图对本发明的实施方式作进一步地详细描述。
本发明提供一种多晶Ge(锗)作为底电池，GaAs(砷化镓)作为顶电池的双结柔性薄膜电池的制作方法，结合图1和图9具体制作方法如下：
步骤一，在金属基底上沉积绝缘层，并将绝缘层图形化
采用PECVD(Plasma Enhanced Chemical Vapor Deposition等离子体增强化学气相沉积法)设备，采用大尺寸的金属基板，批量生产合适尺寸的金属基底。将该尺寸的金属基底(长度和宽度都是裁切后的衬底尺寸的整数倍)投入到PECVD设备当中，该金属基底可为不锈钢箔、Cu箔中的一种，在金属基底的表面沉积1-5μm厚的绝缘层，绝缘层材料可以选用SiO2、Al2O3、SiNX等氧氮化合物中的一种。
其次，采用光刻和湿法刻蚀技术在金属基底上制作图形化的绝缘层。通过涂布、显影和曝光在绝缘层表面形成的图形，然后采用湿法刻蚀工艺去除多余的绝缘层材料，并用丙酮去除固化的光刻胶，完成金属基底上图形化绝缘层的制作，且该图形化绝缘层形状也是最终电池背面金属电极层的图形结构。这样，金属基底即起到背面金属电极层的作用，同时由于其上沉积绝缘层，因此，也起到了绝缘和反射的作用。
步骤二，在图形化的绝缘层表面沉积一层微晶锗籽晶层，去除绝缘层表面多余的微晶锗材料，制成具有微晶锗籽晶层的选择性生长衬底
采用PECVD设备在图形化的绝缘层表面沉积选择性生长一层高掺杂P型微晶锗籽晶层，采用化学腐蚀抛光工艺去除绝缘层表面多余的微晶锗材料后制备成具有微晶锗籽晶层的选择性生长衬底。
如图2所示，采用激光切割技术，将选择性生长衬底沿A方向进行分离，完成选择性生长衬底的制作。
该高掺杂的微晶锗籽晶层既是下一步生长多晶锗底电池层的基础，也是电池底部传输载流子的通道。
步骤三，将具有微晶锗籽晶层的选择性生长衬底表面沉积一层多晶锗底电池层，制得多晶锗底电池。采用LPCVD(Low Pressure Chemical Vapor Deposition低压力化学气相沉积法)设备在具有微晶锗籽晶层的选择性生长衬底表面沉积一层低掺杂P型多晶锗底电池层，厚度在5μm左右，制得多晶锗底电池，如图6所示。
步骤四，在多晶锗底电池层表面通过外延生长依次形成扩散层、缓冲层、隧道结和顶电池结构，制得双结电池结构。
采用MOCVD(Metal-organic Chemical Vapor DePosition金属有机化合物化学气相淀积)等外延设备在底电池上外延生长形成双结电池结构。外延温度630-670℃，压力50-100torr，其中优选的外延温度650℃，压力76torr。
具体地，首先通过扩散在多晶锗底电池层表面形成浅结底电池，主要的扩散元素是磷，并对扩散层进行退火处理，消除界面缺陷，保证扩散层表面的晶体质量，有利于进一步外延生长形成隧道结和顶电池。
然后在恒温条件下在扩散层上依次生长缓冲层、隧道结、顶电池的背场、基区、发射极、窗口层和正面接触层，完成外延层的生长后降至常温，从而制得双结电池结构，如图8所示。
上述制作方法中加入了退火处理技术，能够进一步提高隧道结和顶电池的结晶质量，顶电池结构采用GaAs和AlGaAs材料，这样减少了In原材料的使用量，而且整个过程不需要变温，在恒温的条件下完成外延层生长。
步骤五，在顶电池结构上形成图形化的正面金属电极层
采用整面电镀技术在正面接触层上镀一层金属层，形成正面金属电极层，通过湿法刻蚀工艺去除部分正面金属电极层，形成正面图形化的电极结构，金属层为铜电极层时其蚀刻液为FeCl3和HCl的混合液。采用湿法刻蚀工艺，将非电极覆盖的正面接触层124去除，露出窗口层122，并且形成窗口层表面粗化结构，蚀刻液为NH4OH和H2O2的混合物，在常温下腐蚀。
步骤六，将位于多晶锗底电池层上方外延生长的双结电池结构分离成多个独立电池单元
采用湿法刻蚀工艺，如图7所示，将电池沿B方向初步分离，一直腐蚀至多晶锗底电池层，采用不同比例的H3PO4和H2O2混合液、HCl和C2H6O2混合液等腐蚀液，轮流依次腐蚀；
步骤七，采用PECVD等设备在正面金属电极层上形成减反射层，通过激光切割工艺沿湿法腐蚀的位置依次切割减反射层、多晶锗底电池层和选择性生长衬底，将各电池单元彻底分开。
步骤八，将各电池单元串联后置于上下两柔性衬底之间进行封装，制得薄膜电池组件。可以通过铜箔将相邻的电池进行串联，采用层压机封装。
通过上述的制作方法所形成的双结薄膜太阳能电池组件如图8和图1所示。
其中的电池组件由多个电池单元串联而成，每个电池单元包括选择性生长衬底、底电池和顶电池126，顶电池上设有正面金属电极层200，底电池为多晶锗底电池层106，选择性生长衬底105包括图形化的金属基底100、图形化的绝缘层102和N型微晶锗籽晶层104，绝缘层102形成于金属基底100上，N型微晶锗籽晶层104位于绝缘层102所形成的图形中；顶电池126为砷化镓(GaAs)电池，多晶锗底电池层106至顶电池126之间依次生长有N型的扩散层108、N型的缓冲层110、隧道结N型区112和隧道结P型区114，在正面金属电极层200上形成有减反射层300。其中缓冲层110为N型的InGaAs-GaAs渐变缓冲层，其中铟的比例由1％渐变到0％。减反射层300为MgF2或ZnS减反射层。
GaAs电池为在隧道结P型区114依次外延生长的P型的AlGaAs背场116、P型的GaAs基区118、N型的AlGaAs发射极120、N型的AlGaAs窗口层122和N+型的GaAs正面接触层124，正面金属电极层200位于正面接触层124上，窗口层122由正面接触层124中外露，且其表面形成粗化结构。
以下通过具体实施例来说明双结薄膜电池组件的制作方法。
步骤一、采用PECVD设备、湿法刻蚀技术，批量生产金属基底100，这里的金属基底100可以为方形、圆形或长方形等特定形状。首先采用PECVD设备在金属基底100的表面沉积绝缘层102，该绝缘层102具有反射光线的作用。该绝缘层102的材料可以是SiO2，Al2O3，SiNx等，本实施例采用的是SiO2绝缘层。先抽真空到5Pa，加热温度到300℃；然后通入Ar和TEOS，Ar：200sccm和TEOS：30sccm，气压为50Pa；打开射频电压，并将功率调整至300W；沉积薄膜厚度为5μm。
依次通过光刻胶涂布、显影和曝光在绝缘层表面形成图形，采用湿法刻蚀工艺去除多余的绝缘层材料，并用去胶液去除固化的光刻胶，形成图形化的绝缘层102，如图3所示。
旋涂涂布正胶SU-8光刻胶，厚度约为5μm，线宽1-2μm，线间距5-10微米；用去离子水冲洗干净；其中的腐蚀液为浓硫酸腐蚀液腐蚀绝缘层，在20～60℃腐蚀10分钟；然后用丙酮去除固化的正胶，去胶后进行清洗。
步骤二、如图4所示，采用PECVD设备在绝缘层102所形成的图形中沉积一层微晶锗籽晶层104，加热至400～700℃，生长室通入纯锗烷和乙硼烷，控制纯锗烷和乙硼烷流量比，反应室压强10-2～10Pa，生长厚度为2μm N型微晶锗籽晶层，其掺杂浓度1-3×1019cm-3。
如图5所示，采用化学腐蚀抛光工艺去除绝缘层表面多余的微晶锗材料，制备成具有微晶锗籽晶层的选择性生长衬底105。腐蚀液为过氧化氢和氢氧化钠混合腐蚀液。
采用激光切割技术，将选择性生长衬底105沿A方向进行分离，如图2所示，完成选择性生长衬底105的制作。
如图6所示，采用LPCVD设备在选择性生长衬底表面沉积一层多晶锗底电池层106。将选择性生长衬底105加热至500～800℃，生长室通入纯锗烷和乙硼烷，控制纯锗烷和乙硼烷流量比，生长室压强1～200torr，生长厚度为1-5μm的N型多晶锗底电池层106，其掺杂浓度1×1017cm-3。
步骤三、用MOCVD等外延设备在多晶锗底电池层106上外延生长制得双结电池结构，如图8和图1所示。外延温度630～670℃，压力50～100torr，实施例中采用外延温度650℃，压力76torr。
(1)升温到650℃，在多晶锗底电池层106的表面生长20nm的N型的InxGa1-xP扩散层108，x≈0.5；然后升温到750℃保持一段时间，再降温到650℃，在PH3的氛围下进行退火，提高扩散层108表面的晶体质量；
(2)在扩散层108的表面生长80nm到200nm的N型的InGaAs渐变缓冲层110，In的比例逐渐从1％减少到0％；
(3)在缓冲层110的表面生长20nm的N+型的GaAs隧道结N型区112；
(4)在隧道结N型区112的表面生长20nm的P+型的AlxGa1-xAs隧道结P型区114，x≈0.7；
(5)在隧道结P型区114的表面生长40nm的P型的AlxGa1-xAs背场116，x≈0.7；
(6)在背场116的表面生长3000nm的P型的GaAs基区118；
(7)在基区118的表面生长50nm的N型的AlxGa1-xAs发射极120，x≈0.3；
(8)在发射极120的表面生长20nm的N型的(AlxGa1-x)yIn1-yP窗口层122，x≈0.7、y≈0.5；
(9)在窗口层122的表面生长20nm的N+型的GaAs正面接触层124。
步骤五，在顶电池结构上形成图形化的正面金属电极层，如图7所示；
清洗电池正面，采用电镀工艺，在正面接触层表面沉积正面金属电极层，电极层的厚度是1-10μm，材料选择铜或者铜镍合金。采用光刻工艺和湿法工艺，去除不需要的金属电极层，形成图形化的正面电极图形，蚀刻液为30％FeCl3+4％HCl+H2O，常温蚀刻。采用湿法刻蚀工艺，将非电极覆盖的正面接触层去除，露出窗口层，并且在窗口层表面形成粗化结构，蚀刻液为NH4OH和H2O2的混合物，常温腐蚀。
步骤六、采用湿法刻蚀工艺，将特定位置的外延结构层125沿B方向初步分离，如图2所示，一直腐蚀至多晶锗底电池层，从而将外延结构层分离，腐蚀液采用不同比例的H3PO4和H2O2混合液、HCl和C2H6O2混合液等，并轮流依次腐蚀。
步骤七、采用PECVD设备在电池正面沉积一层MgF2或ZnS减反射层。采用激光切割工艺，切割减反射层、底电池的多晶锗底电池层和选择性生长衬底，实现单个电池分离。
步骤八、将相邻的电池用铜箔进行串联，将串联好的的电池放置在上下两层PET之间，采用层压机封装成薄膜柔性电池组件。
显然，上述实施例仅仅是为清楚地说明所作的举例，而并非对实施方式的限定。对于所属领域的普通技术人员来说，在上述说明的基础上还可以做出其它不同形式的变化或变动。这里无需也无法对所有实施方式予以穷举。而由此所引伸出的显而易见的变化或变动仍处于本发明保护的范围之中。

Claims (11)

1.一种双结薄膜太阳能电池组件，由多个电池单元串联而成，每个电池单元包括选择性生长衬底、底电池和顶电池，所述顶电池上设有正面金属电极层，其特征在于，所述选择性生长衬底包括金属基底、图形化的绝缘层和N型微晶锗籽晶层，所述绝缘层形成于所述金属基底上，所述N型微晶锗籽晶层位于所述绝缘层所形成的图形中；所述底电池为多晶锗底电池层，所述顶电池为GaAs电池，所述多晶锗底电池至所述顶电池之间依次生长有N型的扩散层、N型的缓冲层、隧道结N型区和隧道结P型区，所述正面金属电极层上形成有减反射层。
2.根据权利要求1所述的双结薄膜太阳能电池组件，其特征在于，所述缓冲层为N型的InGaAs-GaAs渐变缓冲层，其中铟的比例由1％渐变到0％。
3.根据权利要求1所述的双结薄膜太阳能电池组件，其特征在于，所述的减反射层为MgF2或ZnS减反射层。
4.根据权利要求1-3任一所述的双结薄膜太阳能电池组件，其特征在于，所述GaAs电池为在所述隧道结P型区依次外延生长的P型的AlGaAs背场、P型的GaAs基区、N型的AlGaAs发射极、N型的AlGaAs窗口层和N+型的GaAs正面接触层，所述正面金属电极层位于所述正面接触层上。
5.根据权利要求4所述的双结薄膜太阳能电池组件，其特征在于，所述窗口层由所述正面接触层中外露，且其表面形成粗化结构。
6.一种双结薄膜太阳能电池组件的制作方法，其特征在于，所述方法包括如下步骤：
步骤一，在金属基底上沉积绝缘层，并将绝缘层图形化；
步骤二，在图形化的绝缘层表面沉积一层微晶锗籽晶层，去除绝缘层表面多余的微晶锗材料，制成具有微晶锗籽晶层的选择性生长衬底；
步骤三，将具有微晶锗籽晶层的选择性生长衬底表面沉积一层多晶锗底电池层，制得多晶锗底电池；
步骤四，在多晶锗底电池层表面通过外延生长依次形成扩散层、缓冲层、隧道结和顶电池结构，制得双结电池结构；
步骤五，在顶电池结构上形成图形化的正面金属电极层；
步骤六，将位于多晶锗底电池层上方外延生长的双结电池结构分离成多个独立电池单元；
步骤七，在正面金属电极层上形成减反射层，并依次切割减反射层、多晶锗底电池层和选择性生长衬底，将各电池单元彻底分开；
步骤八，将各电池单元串联后置于上下两柔性衬底之间进行封装，制得薄膜电池组件。
7.根据权利要求6所述的制作方法，其特征在于，所述步骤一中在金属基底上沉积绝缘层，将绝缘层图形化，其具体方法是：在金属基底表面沉积1-5μm厚的绝缘层；通过涂布、显影和曝光方法在绝缘层表面形成图形；采用湿法刻蚀工艺去除多余的绝缘层材料实现绝缘层的图形化。
8.根据权利要求6所述的制作方法，其特征在于，所述步骤二中采用PECVD设备在图形化的绝缘层表面沉积一层高掺杂P型微晶锗籽晶层，通入纯锗烷和乙硼烷并加热至400～700℃，在反应压强102～10Pa、掺杂浓度1-3×1019cm3下生长形成P型微晶锗籽晶层；采用化学腐蚀抛光工艺去除绝缘层表面上多余的微晶锗籽晶层，制得具有微晶锗籽晶层的选择性生长衬底。
9.根据权利要求6所述的制作方法，其特征在于，所述步骤四中的在多晶锗底电池层表面通过外延生长依次形成扩散层、缓冲层、隧道结和顶电池结构，其具体方法是：在多晶锗底电池层表面生长N型的InGaP扩散层；通过P元素在高温下向多晶锗底电池层内部进行扩散形成浅的扩散PN结；在PH3的氛围下对扩散层InGaP进行退火处理；在恒温条件下依次生长缓冲层、隧道结、顶电池的背场，基区，发射极、窗口层和正面接触层。
10.根据权利要求9所述的制作方法，其特征在于，所述步骤五中在双结电池的正面接触层上通过电镀和湿法刻蚀方法形成图形化的正面金属电极层；然后去除未被正面金属电极层覆盖下的正面接触层，露出窗口层并在窗口层表面形成粗化结构。
11.根据权利要求6所述的制作方法，其特征在于，所述步骤八中的通过铜箔将分离后的各电池串联，然后置于上下两层PET薄膜之间，通过层压机封装形成薄膜柔性电池组件。
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