TWI355091B - Exponentially doped layers in inverted metamorphic - Google Patents

Exponentially doped layers in inverted metamorphic Download PDF

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TWI355091B
TWI355091B TW097132608A TW97132608A TWI355091B TW I355091 B TWI355091 B TW I355091B TW 097132608 A TW097132608 A TW 097132608A TW 97132608 A TW97132608 A TW 97132608A TW I355091 B TWI355091 B TW I355091B
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Mark A Stan
Arthur Cornfeld
Vance Ley
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Emcore Corp
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Description

1355091 九、發明說明： 【發明所屬之技術領域】 本發明係關於太陽能電池半導體裝置領域，且特定而古 係關於包含一變質層之多接點太陽能電池。此等裝置亦包 含稱作反相變質太陽能電池之太陽能電池。 【先前技術】 光生伏打電池一亦稱作太陽能電池—係過去幾年中已變
侍實用之最重要之新能源之一。人們已對太陽能電池之開 發作出了大量努力。因此，太陽能電池當前正用於許多商 業及面向消費者之應用中。雖然已在此領域中取得了顯著 進步’但對太陽能電池滿足更複雜應用需要之要求還跟不 上需求之步伐。例如在資料通信中利之衛星等應用已大 大増加了對具有經改良之功率及能量轉換特性之太陽能電 池之需求。 在衛星及其他與㈣相關之應用中，—衛星功率系統之 大小、質量及成本依賴於所使用太陽能電池之功率及能量 轉換效率。換言之’有效負載之大小及機餘務之可用性 ^所提供之功率量成比例。因此，隨著有效負載變得越來 :雜，丨當機載功率系統之功率轉換裝置之太陽能電池 I得越來越重要。 太陽能電池常常製作成賢直之多接點結構形式，並設置 二水平陣列中，其中將各個單獨之太陽能電池串聯連接在 =—陣列之形狀及結構以及其含有之電池數量部分地 斤需要之輸出電壓及電流確定。 i33679.doc 1355091 在例如M.W. Wanless(萬勒斯）等人所著之”用於高性能、 ιπ-ν光生伏打能量轉換器之晶格失配方法（Lattice Mismatched Approaches for High Performance, ΙΙΙ-γ Photovoltaic Energy Converters)" (2005年 1 月 3_7 曰舉行之 第3 1屆IEEE光生伏打專家會議之會刊，IEEE出版社， 2005年）中所說明之反相變質太陽能電池結構為未來商業 高效太陽能電池之開發提供一重要起點。闡述於此先前技 術中之結構提供與材料及製作步驟之適當選擇相關之多個 實際困難。 在本發明之前，在先前技術中所揭示之材料及製作步驟 尚不足以產生一種使用一反相變質電池結構之商業可行及 有能效之太陽能電池。 【發明内容】 本發明提供一種形成一多接點太陽能電池之方法，該多 接點太陽能電池包括一上部子電池、一中間子電池及一下 部子電池’該方法包括：提供用於半導體材料之為晶生長 之第一基板；在該基板上形成一具有一基極及一射極之第 一太陽能子電池，該第一太陽能子電池具有一第一帶隙. 在該第一太陽能子電池上方形成一具有一基極及一射極之 第二太陽能子電池，該第二太陽能子電池具有—小於該第 一帶隙之第二帶隙，在該第二子電池上方形成一分級夾 層，該分級失層具有一大於該第二帶隙之第三帶隙；及在 該分級夹層上方形成一具有一基極及一射極之第三太陽能 子電池，該第三太陽能子電池具有一小於該第二帶隙之第 133679.doc 1355091 四帶隙，以使得該第三子電池相對於該第二子電池晶格失 配，其中該等基極中之至少一者具有一以指數方式之摻雜 分佈。 於另一態樣中，本發明提供一種藉由以下步驟製造—太 陽能電池之方法：提供一第一基板；在該第一基板上沈積 一形成一太陽能電池之半導體材料層序列，該半導體材料 層序列包含至少一個具有指數摻雜之基極層；將一替代基 板安裝在該層序列之頂部上；及移除該第一基板。 於另一態樣中，本發明提供一種藉由以下步驟製造一太 陽能電池之方法：提供一第一基板；在該第一基板上沈積 一形成一太陽能電池之半導體材料層序列，該半導體材料 層序列包含至少一個具有指數摻雜之基極層；將一替代基 板安裝在該層序列之頂部上；及移除該第一基板。於另一 態樣中，本發明提供一種用於形成一太陽能電池之方法， 該方法包括：形成一包含一由InGaP半導體材料構成之基 極及射極層之頂部電池；形成一 InGap半導體材料之中間 電池射極層及一 GaAs半導體材料之基極層；及形成一包含 一 InGaAs半導體材料之射極及基極層之底部電池，其中該 等基極中之至少一者具有一指數摻雜分佈。 【實施方式】 現將闡述本發明之細節，包含其實例性態樣及實施例。 參見各圖示及下文之詳細說明，才目同之參考編號用於指代 相同或功能上相似之元件，且旨在以一高度簡化之圖示方 式圖解說明實例性實施例之主要特徵。此外，該等圖式既 133679.doc -9- 1355091 不意欲繪示實際實施例之每一特徵，亦並非意欲繪示所示 元件之相對尺寸，且並非按比例繪製。 圖1繪示根據本發明當在一基板上形成三個子電池A、b 及C之後的多接點太陽能電池。更特定而言，圖中顯示一 基板101，其可係砷化鎵（GaAs)、鍺（Ge)或其它適合之材 料。在係一 Ge基板之情況下，在該基板上沈積一成核層 102。在該基板上，或在成核層1〇2上方，進一步沈積一緩 衝層103及一蝕刻終止層1〇4。然後在層1〇4上沈積一接觸 層105，並在該接觸層上沈積一窗口層丨〇6 ^然後，在窗口 層106上沈積一由一 n+射極層1〇7及一 p型基極層ι〇8組成之 子電池A。 應注意，多接點太陽能電池結構可由週期表中所列之服 從晶格常數及能帶隙要求之III族至V族元素之任何適當組 合形成，其中該Ιπ族包含硼（B)、鋁（A1)、鎵（Ga)、銦 (In)、及蛇（T)。丨乂族包含碳（c)、矽（Si)、鍺（(Je)、及錫 (Sn) ° V族包含氮（N)、磷（P)、砷（As)、銻（Sb)、及鉍 (Bi)。 在較佳實施例中，射極層107由InGa(Al)P構成且基極層 108由InGa(Al)P構成。前述式中之括號内之鋁或μ項意指 A1係一可選成分，且在此示例中可使用介於〇%至3〇0/。之間 的量。本文將結合圖16來論述根據本發明之射極及基極層 107及108之摻雜分佈。 在基極層108之頂部上沈積一用於降低重組損失之背面 場（"BSF”）層 1〇9。 133679.doc -10- 1355091 BSF層109自基極/BSF介面表面附近之區域驅動少數載 流子，以使重組損失效應最小化。換言之，—bsf層1〇9減 少太陽能子電池A背側處之重組損失且從而減少基極中之 重組。 在BSF層109之頂部上沈積—重推雜之p型及㈣層序列 no,其形成一作為將子電池八連接至子電池b之電路元件 之隧道二極體。 在隧道二極體層110之頂部上沈積一窗口層ηι。子電池 B中所使用之窗口層丨丨丨亦運作以減少重組損失。窗口層 1Π亦改良下伏接點之電池表面之鈍化。熟習此項技術者 應瞭解’可在該電池結構中添加或刪除附加層，此並不背 離本發明之範疇。 在窗口層111之頂部上沈積子電池B之層：射極層ιΐ2及p 型基極層113。此等層較佳地分別 成（針對一Ge增長模板），儘管亦可使用符合晶格常數及帶 隙要求之任何其它適合之材料。將結合圖16論述根據本發 明之層112及113之摻雜分佈。 在電池B之頂部上沈積一BSF層114，其執行與bsf層1〇9 相同之功能。在BSF層114上方沈積一類似於層ιι〇之 p++/n++隧道一極體ι15，從而再次形成一將子電池b連接 至子電池C之電路元件。 在隧道二極體115上方將一較佳由InGa(A1)p構成之障壁 層116a沈積至約丨.0微米之厚度。該障壁層旨在防止螺紋 錯位以生長至中間及頂部子電池8及c内相反之方向或以 133679.doc
• 1U 生長至底部子電池八内之方向傳播，且其更具體閣述於 2007年9月24日提出申請之第1 1/860,183號美國共同待決專 利申請案中。 ' 在障壁層116a上方沈積一變質層（分級夾層）116。層ii6 較佳地係一系列在組分上呈臺階分級之InGaAlAs層，其單 調改變之晶格常數旨在實現晶格常數自子電池B至子電池 C之轉變。層11 6之帶隙較佳地為符合一稍大於中間子電池 B之帶隙之值的1.5 ev。 在一個實施例中，如萬勒斯等人之論文中所建議，該臺 階分級含有九個組分分級之InGaP臺階，其中每一台階層 具有0.25微米之厚度。在較佳實施例中，層n 6由具有單 調改變之晶格常數之InGaAlAs構成。 在本發明之另一實施例中，可在InGaA1As變質層116上 方沈積一可選第二障壁層116b。第二障壁層116b通常將具 有一與障壁層116a之組分稍微不同之組分。 在障壁層116b上方沈積一窗口層117，此窗口層運作以 減少子電池"C”中之重組損失。熟習此項技術者應瞭解， 可在不背離本發明範疇之前提下在該電池結構中添加或刪 除額外層》 在窗口層117之頂部上沈積子電池c之層：n+射極層U8 及P型基極層119。此等層較佳地由inGaAs構成，儘管亦可 使用符合晶格常數及帶隙要求之其它適合材料。本文將結 合圖16論述層118及119之摻雜分佈。 在電池C之頂部上沈積一 BSF層120，該BSF層執行與 133679.doc 12 1355091 BSF層109及114相同之功能。 最後，在BSF層120上沈積一p+接觸層121 » 熟習此項技術者應瞭解，可在不背離本發明範疇之前提 下在該電池結構中添加或刪除額外層。 圖2係一圖1所示太陽能電池在下一製程步驟之後的剖面 圖’在該下一製程步驟中在p+半導體接觸層121上方沈積 一金屬接觸層122。該金屬較佳為Ti/Au/Ag/Au。 圖3係一圖2所示太陽能電池在下一製程步驟之後的剖面 圖’在該下一製程步驟中在金屬層122上方沈積一黏合劑 層123。β亥黏合劑較佳為晶圓接合（wafer Bond)(由密蘇裏 州羅拉之布魯爾科技公司（Brewer Science, Inc. of R〇iia MO.)製造）。 圖4係一圖3所示太陽能電池在下一製程步驟之後的剖面 圖，在該下一製程步驟中附裝一替代基板124(較佳為藍寶 石）。該替代基板厚度約為40密耳，且穿製有直徑約為】 mm、間隔4 mm之孔以有助於該黏合劑及該基板之後續移 除。 圖5A係一圖4所示太陽能電池在下一製程步驟之後的剖 面圖，在该下一製程步驟中藉由一搭接及/或蝕刻步驟序 列（其中移除基板1 〇 1、緩衝層丨〇3及蝕刻終止層丨〇4)來移除 原始基板。一特定蝕刻劑之選擇取決於生長基板。 圖5B係一圖5A所示太陽能電池之剖面圖，其中該替代 基板124之定向係在圖式之底部。此應用中之後續圖式將 採取此定向。 133679.doc • 13. 1355091 圖6A係-在其中實施太陽能電池之晶圓之俯視平面圖。 對：個電池之繪示係僅出於例示之目的，且本發明並不限 於每一晶圓之任何特定電池數量。 在母電池中，存在柵格線501(更特定地顯示於圖1〇之 面中）、一互連匯流排線502及一接觸墊503。柵格及匯 流排之幾何圖形及數量為例示性，且本發明並不限於所圖 解說明之實施例。 圖6B係一圖6A所示之具有四個太陽能電池之晶圓之仰 視平面圖。 圖7係一圖6A所示晶圓在下一製程步驟之後的仰視平面 圖’在該下-製程步驟中使用磷化物及石申化物餘刻劑在每 一電池周邊周圍蝕刻一臺面5丨〇。 圖8係-圖5騎示太陽能電池之簡化剖面圖，其僅繪示 替代基板124上方之幾個頂部層及下部層。 圖9係-圖8所示太陽能電池在下一製程步驟之後的剖面 圖，在該下一製程步驟中由一Hcl/H2〇溶液移除蝕刻終止 層 104。 圖1 0係一圖9所示太陽能電池在下一製程步驟序列之後 的剖面圖’在該下一製程步驟序列中在接觸層105上方放 ^光阻刎遮罩（未顯示）以形成栅格線501。栅格線5〇 1係 藉由蒸發而沈積，且經微影圖案化並沈積在接觸層1〇5上 方。去除遮罩以形成金屬柵格線501。 圖11係-圖10所示太陽能電池在下一製程步驟之後的剖 面圖’在該下-製程步驟中將該等柵格線用作一遮罩以使 133679.doc 1355091 用一檸檬酸/過氧化物钱刻混合物將該表面向下钱刻至窗 口層 106。 圓12係一圖11所示太陽能電池在下一製程步驟之後的剖 面圖，在該下一製程步驟中在晶圓之具有柵格線5〇1之"底,, 側之整個表面上方施加一減反射（ARC)電介質塗層13〇。 圖13係一圖12所示太陽能電池在下一製程步驟之後的剖 • 面圖，在該下一製程步驟中使用磷化物及砷化物蝕刻劑將 φ 臺面510向下蝕刻至金屬層122 ^該圖式中之剖面繪示成自 圖7中所示之A-A平面觀看。然後，將一或多個銀電極銲接 _ 至該（等）接觸墊。 圖14係一圖13所示太陽能電池在由EKc 922移除替代基 板124及黏合劑123之後的下一製程步驟之後的剖面圖。在 該替代基板中提供之較佳穿孔具有〇 〇33英吋之直徑且 以0.1 52英吋隔開。 圖15係一個實施例中圖14所示太陽能電池在下一製程步 • 驟之後的剖面圖’在該下一製程步驟中在ARC層130上方 施加一黏合劑且將一剛性防護玻璃附裝在其上。 於一不同之實施例中’起初可將圖13之太陽能電池安裝 在-支撐物上’且隨後移除替代基板124及黏合劑⑵。此 ' t撐物可係由一黏合劑安裝之剛性防護玻璃，如圖15中所 繪示。 圖16係一根據本發明於-第-實施例中之變質太陽能電 池之子電池中之射極與基極層之間的捧雜分佈之曲線圖。 士上所述ϋ16中繪不之射極與基極層之推雜分佈可實 133679.doc •15· 1355091 施於本發明之三接點太陽能電池之子電池之任何—或多個 中。 根據本發明之特定摻雜分佈係圖解說明於圖式中：射極 摻雜自緊鄰鄰接層（例如’層106、111或117)之區域中之每 立方公分約5χ 1018降低至毗鄰圖16 _之虛線所示之p_n接點 之區域中之每立方公分5xl0〗7。基極摻雜自毗鄰該ρ·η接點 之每立方公分1 X 1 〇1 6指數增加至毗鄰該鄰接層（例如，層 • 1 09、1 14或120)之每立方公分1 X丨〇丨8。 由一指數摻雜梯度exp[-x/ λ ]所產生之收集場之絕對值 • 由量值£=〇77《（1/乂)）(以1)[_心//1]}之恆定電場給出，其中1^係 _ 波爾茲曼常數，Τ係以開氏度為單位之絕對溫度，q係電子 電荷之絕對值，且λ係一摻雜衰減之參數特性。 根據本發明，本發明之效能已在其中在底部子電池之3 —厚基極層中倂入有-指數摻雜分佈之測試太陽能電池 中展示。在測量該測試電池之電參數之後，在電流收集中 • 觀測到6·7%之提高。該測量指示一等於至少3.014 V之開 路電壓（voc)、一至少16 55 mA/cm之短路電流π。）及一在 AMO處至少為0.86之填充因數（ff)。 本發明所教示之指數摻雜分佈在經摻雜區域t產生-十互 疋％在本發a月之特^三接點太陽能電池材料及結構令， 底部電池在所有子電池中具有最小之短路電流。於一三接 太陽此電池中，將個別子電池堆棧並形成—串聯電路。 因此，整個電池中之總電流受到該等子電池中任一者所產 生之最小電流之限也丨。m , t 利因此’藉由將該底部電池中之短路 I33679.doc -16- 1355091 電流提高6.7%,該電流更接近地近似較高子電池之電流， 且該三接點太陽能電池之總效率亦提高6 7%。在具有約 30/。效率之太陽能三接點電池中，本發明之實施方案將使 效率提高U67之因數，即達到32,〇1%。此總效率之提高 在太陽能電池技術領域中相當大。除效率提高以外，由: 數摻雜分佈所產生之收集場將增強太陽能電池之輕射^ 度’此對於太空船應用很重要。 儘管指S掺雜分佈係、已經實施並檢驗之摻雜設計，但其 它摻雜分佈可產生仍可提供其它優點之線性變化收集場:、 舉例而言，〆U之摻雜分佈在經摻雜區域中產生對於少數 載流子收集及對於該太陽能電池報廢時之輕射硬度兩者均 有利之線性場。-或多個基極層甲之此其它換雜分佈歸屬 於本發明之範疇内。 本文中所緣不之穆雜分佈僅為例示性，且如熟習此項技 術者將瞭解’可在不背離本發明範嘴之前提下使用其它更 複雜之分佈。 應瞭解’上文所說明之元件中之每一者或兩個或兩個以 ""件起亦了有用地應用於不同於上文所述類型之不 同於該構造類型之其它類型之構造中。 雖然已將本發明圖解說明及闡述為體現為一反相變質多 接點太陽能電池’但本發明並不意欲限定於所示細節，乃 因亦可在以任冑方式冑不背離本發明精神之前提下做出各 種修改及結構改變。 無需進一步分析，上文將全面彼露本發明之要旨，以使 133679.doc 1355091 得其他人可應用現有知識在不忽略根據先前技術觀點合理 構成本發明之一般或具體態樣之基本特性之特徵之前提下 容易地將本發明修改成適用於各種應用，且因此，這些修 改應該且打算包含在隨附申請專利範圍之等效意義及範疇 内0 【圖式簡單說明】
結合附圖考量並參照以下詳細說明將更好且更全面地理 解本發明，附圖中： 圖1係一根據本發明構造之太陽能電池之放大剖面圖； 圖2係一圖1所示太陽能電池在下一製程步驟之後的剖面 圖； 圖3係一圖2所示太陽能電池在下一製程步驟之後的剖面 圖； 圖4係-圖3所示太陽能電池在下—製程步驟之後的剖面 圖；
圖5 A係一圖4所示太陽能電池在下一製程步驟之後的剖 面圖，在該下一製程步驟中移除原始基板； 圖5B係一圖5八所示太陽能電池之另-剖面圖，其中替 代基板在圖式之底部； 圖6A係在其中製作該等太陽能電池之晶圓之俯視平面 圖； 圖όB係 ' —在其中贺«a _ . 表作或專太陽能電池之晶圓之仰視平面 圖； 圖7係-圖6A所示晶圓在下一製程步驟之後的俯視平面 133679.doc -18- 1355091 ran · 圖， 圖8係一圖5B所示太陽能電池在下一製程步驟之後的剖 面圖； 圖9係一圖8所示太陽能電池在下一製程步驟之後的剖面 圖； 圖10係一圖9所示太陽能電池在下一製程步驟之後的剖 面圖； 圖Π係一圖10所示太陽能電池在下一製程步驟之後的剖 面圖； 圖12係一圖11所示太陽能電池在下一製程步驟之後的剖 面圖； 圖13係一圖12所示太陽能電池在下一製程步驟之後的剖 面圖； 圖14係一圖13所示太陽能電池在下一製程步驟之後的剖 面圖； 圖1 5係一圊14所示太陽能電池在下一製程步驟之後的剖 面圖；及 圖16係一根據本發明在反相變質太陽能電池之子電池中 之射極與基極層之間的摻雜分佈之曲線圖。 【主要元件符號說明】 101 基板 102 成核層 103 緩衝層 104 I虫刻終止層 133679.doc •19· 1355091 105 接觸層 106 窗口層 107 n +射極層 108 p型基極層 109 背面場層 110 隧道二極體層 111 窗口層 112 射極層 113 p型基極層 114 BSF層 115 p ++/n+ +随道二極體 116 變質層 116a 障壁層 1 16b 可選第二障壁層 117 窗口層 118 η +射極層 119 ρ型基極層 120 BSF層 121 Ρ+接觸層 122 金屬接觸層 123 黏合劑層 124 替代基板 130 減反射電介質塗層 501 柵格線 133679.doc -20- 1355091 502 503 510 互連匯流排線 接觸墊 臺面
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1355091 ’ 第097132608號專利申請案
. 中文申請專利範園替換本(100年6月） 十、申請專利範園： -種形成-多接點太陽能電池之方法，該電池包括 部子電池、-中間子電池及—下部或底部子電 法包括： 读万 提供用於一半導體材料之一磊a座 站日日生長之一第—基板； 在該基板上形成-具有—第一基極及—第—射極 -太陽能子電池’其中該第—太陽能子電池具有 帶隙； $ 在該第一太陽能+電池上方形成一具有 —^ - AL l-r 示—I 極及 -，之第二太陽能子電池，其中該第二太陽 電池具有一小於該第—帶隙之第二帶隙； b 夾能子電池上方形成一分級夾層，該分級 夾層具有一大於該第二帶隙之第三帶隙；及 在該分級夾層上方形成一具有一第三基極及—第三射 極之第三太陽能子電池，該第三太陽能子電池具有一小 =第二帶隙之第四帶隙，以使得該第三子電池相對於 該第二子電池晶格失配， =料基極t之至少-者具有—指數掺雜分佈。 月长項1之方法’其中該第一太陽能電池中之該第一 :極具有-自田比鄰該第一基極·第一射極接點之每立方公 =〜鄰—鄰接層之每立方公分一之指數摻 胃求項1之方法，其中該第二太陽能電池中之該第二 基極具有-自她鄰該第二基極-第二射極接點之每:方: 133679-1000610.doc 1355091 分iMo»6至毗鄰一鄰接層之每立方公分1><1〇18之指數摻 雜分級。 如請求項丨之方法，其中該第三太陽能電池中之該第三 基極具有-自础鄰該第三基極第三射極接點之每立方: 分1X10丨6至毗鄰一鄰接層之每立方公分1χ10〗8之指數摻 雜分級》 > 5. 如請求項4之方法，其中該第三太陽能電池係該底部子 電’也，且該指數摻雜分級導致該太陽能電池報廢時之輻 射硬度。 6. 如。月求項！之方法，其中該第一、該第二及該第三射極 中之一者具有一自毗鄰該基極-射極接點之每立方公分 hio17至毗鄰一鄰接層之每立方公分5><1〇18之摻雜增加 分級。 7·如喷求項1之方法，其中該第一基板由GaAs構成。 8. 如請求項1之方法，其中該第一太陽能子電池由_ InGa(Al)p射極區域及一 InGa(A1)p基極區域構成。 9. 如清求項1之方法，其中該第二太陽能子電池由- InGa 射極區域及一 GaAs基極區域構成。 月求項1之方法，其中該分級夾層由InGaAlAs構成。 11.如吻求項10之方法，其中該分級夾層由具有單調改變戈 曰日格*數之九個台階層構成。 12·如咕求項1之方法，其中該第三太陽能子電池由InGaA 構成。 13.如請求項1之方法， 進一步包括沉積一厚度約1微米之阻 133679-1000610.doc -2- 1355091 障層，其毗鄰該分級夾層以防止螺紋錯位傳播。 14. -種製造一多接點太陽能電池之方法該多接點太陽能 電池包括—上部子電池、-中間子電池及-下部或底部 子電池，該方法包括： 之指數摻雜分級； 提供用於一半導體材料之一磊晶生長之一第—基板； 在該第一基板上形成一具有一第—基極及一第—射極 之第-太陽能子電池，其中該第一太陽能子電池具有在 該第一太陽能子電池中之該第一基極的一第—帶隙，該 第一太陽能子電池具有一自毗鄰該第一基極_第一射極接 點之-區域中之每立方公分lxl〇16至毗鄰形成在鄰接於 該第一基極之一鄰接層之一區域中之每立方公分ΐχΐ〇ι、8 —在該第-太陽能子電池上方形成—具有一第二基極及 一第二射極之第二太陽能子電池，其中該第二太陽能子 電池具有一小於該第一帶隙之第二帶隙；及
在§亥第二太陽能子電池上方形成一具有_ = 所^暴極及 一第三射極之第三太陽能子電池，其中該第三太陽能子 電池具有一小於該第二帶隙之第三帶隙。 15.如請亡項14之方法，其中該第一 '該第二及該第三射極 中之一者具有一自毗鄰該基極·射極接點 17 可正方公分 5χ1〇至晚鄰該鄰接層之每立方公分5xl〇u 雜增加 分級。 16.如請求項14之方法，其中該第二太陽能子電池 InGaP射極區域及_GaAs基極區域構成。 133679-1000610.doc
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