TWI488314B - 反向變質多接點太陽能電池之障壁層 - Google Patents

反向變質多接點太陽能電池之障壁層 Download PDF

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TWI488314B
TWI488314B TW097128500A TW97128500A TWI488314B TW I488314 B TWI488314 B TW I488314B TW 097128500 A TW097128500 A TW 097128500A TW 97128500 A TW97128500 A TW 97128500A TW I488314 B TWI488314 B TW I488314B
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Arthur Cornfeld
Mark A Stan
Tansen Varghese
Fred Newman
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Emcore Solar Power Inc
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Description

反向變質多接點太陽能電池之障壁層
本發明係關於太陽能電池半導體裝置之領域，且明確而言，係關於包括變質層之多接點太陽能電池。此類裝置亦包括反向變質太陽能電池。
本發明係依據美國空軍授予之第FA9453－06－C－0345號合同在政府支持下進行的。政府在本發明中具有特定權利。
相關申請案之參考
本申請案與同本文同時申請之題為"具有剛性支撐件之薄反向變質多接點太陽能電池(Thin Inverted Metamorphic Multijunction Solar Cell with Rigid Support)"之共同待決的第＿＿＿號美國專利申請案相關。 本申請案與2006年12月27日申請之共同待決的第11/616,596號美國專利申請案相關。 本申請案亦與2006年6月2日申請之共同待決的第11/445,793號美國專利申請案相關。
光伏電池(亦稱為太陽能電池)係在過去幾年中變得可用之最重要新能源之一。已對太陽能電池開發投入了相當大的努力。因而，太陽能電池當前正用於許多商業及面向消費者之應用中。儘管已經在此領域中取得顯著進步，但對太陽能電池滿足更複雜應用之需要的要求尚未能跟上需求。例如用於數據通信之衛星等應用已經劇烈增加對具有改良之電力及能量轉換特徵之太陽能電池之需求。
在衛星及其他空間相關應用中，衛星電力系統之大小、質量及成本取決於所使用之太陽能電池之電力及能量轉換效率。換言之，有效負荷之大小及機載服務之可用性與所提供之電力量成比例。因此，隨著有效負荷變得越來越複雜，充當機載電力系統之電力轉換裝置之太陽能電池亦變得越來越重要。
太陽能電池通常製作成垂直多接點結構並設置成水平陣列，其中各個太陽能電池串聯連接在一起。陣列之形狀及結構以及其所含有之電池數目部分由所需輸出電壓及電流判定。
例如M.W.雲利斯(Wanless)等人之"用於高效能III－V光伏能量轉換器之晶格失配途徑(Lattice Mismatched Approaches for High Performance,III－V Photovoltaic Energy Converters)"(2005年1月3日至7日第31屆IEEE光伏專家會議之會議論文集，IEEE出版社，2005年)中所描述之反向變質太陽能電池結構提出將來商用高效率太陽能電池開發之重要起點。此先前技術中所描述之結構提出許多與材料及製作步驟之恰當選擇有關的實際困難，尤其與"下部"子電池(具有最低能帶隙之子電池)與相鄰子電池之間的晶格失配層相關聯。在本發明之前，先前技術中所揭示之材料及製作步驟尚未足以使用反向變質電池結構來生產商業上可行且具有能量效率之太陽能電池。明確而言，自變質層傳播之穿透位錯提出處理挑戰。
本發明提供一種形成包括上部子電池、中部子電池及下部子電池之多接點太陽能電池之方法，該方法藉由以下步驟實現：提供第一基板，其用於半導體材料之磊晶成長；在該基板上形成第一太陽能子電池，其具有第一能帶隙；在該第一太陽能子電池上方形成第二太陽能子電池，其具有小於該第一能帶隙之第二能帶隙；在該第二子電池上方形成障壁層，以抑制穿透位錯；在該障壁層上方形成分級夾層，該分級夾層具有大於該第二能帶隙之第三能帶隙；以及在該分級夾層上方形成第三太陽能子電池，其具有小於該第二能帶隙之第四能帶隙，且該第三子電池相對於該第二子電池為晶格失配的。
在另一態樣中，本發明亦提供一種多接點太陽能電池，該多接點太陽能電池包括：基板；第一太陽能子電池，其位於該基板上且具有第一能帶隙；第二太陽能子電池，其設置在該第一子電池上方且具有小於該第一能帶隙之第二能帶隙；障壁層，其設置在該第二子電池上方；分級夾層，其設置在該障壁層上方且具有大於該第二能帶隙之第三能帶隙；以及第三太陽能子電池，其設置在該分級夾層上方且相對於中部子電池為晶格失配的並具有小於該第三能帶隙之第四能帶隙。該障壁層由適當材料構成且為晶格恆定的，以抑制或防止與分級夾層相關聯之穿透位錯傳播。
現將描述本發明之細節，其中包括其示範性態樣及實施 例。參看附圖及以下描述，相同參考標號用於識別相同或功能相似元件，且希望以高度簡化之圖解方式說明示範性實施例之主要特徵。此外，附圖不希望描繪實際實施例之每一特徵，亦不希望描繪所描繪元件之相對尺寸，且並非按比例繪製。
圖1描繪在基板上形成三個子電池A、B及C之後之根據本發明之多接點太陽能電池。更明確而言，其中展示基板101，其可為砷化鎵(GaAs)、鍺(Ge)或其他合適材料。在Ge基板的情況下，在該基板上沈積成核層102。在該基板上或在該成核層102上方，進一步沈積緩衝層103及蝕刻終止層104。接著，在層104上沈積接觸層105，且在該接觸層上沈積窗口層106。接著，在該窗口層106上沈積子電池A，其由n＋發射極層107及p型基極層108組成。
應注意，多接點太陽能電池結構可由週期表中所列舉之III至V族元素之服從晶格常數及能帶隙要求之任何合適的組合形成，其中III族包括硼(B)、鋁(Al)、鎵(Ga)、銦(In)及鉈(T)。IV族包括碳(C)、矽(Si)、鍺(Ge)及錫(Sn)。V族包括氮(N)、磷(P)、砷(As)、銻(Sb)及鉍(Bi)。
在較佳實施例中，發射極層107由InGa(Al)P構成，且基極層由InGa(Al)P組成。
括號中之Al項意謂Al係可選成分，且在此例子中，可以在0%至30%範圍內的量使用。
在基極層108之上沈積背面場("BSF")層109，其用於降低重組損失。
BSF層109驅動來自位於基極/BSF分界面附近之區的少數載流子，以將重組損失之效應減至最小。換言之，BSF層109降低太陽能子電池A之背側處之重組損失，且因此降低基極中之重組。
在BSF層109之上接連沈積重度摻雜p型及n型層110，其形成隧道二極體，該隧道二極體係將子電池A連接至子電池B之電路元件。
在隧道二極體層110之上沈積窗口層111。子電池B中所使用之窗口層111亦操作以降低重組損失。窗口層111亦改良下伏接點之電池表面之鈍化作用。熟習此項技術者應明白，可在不脫離本發明範疇的情況下在電池結構中添加或刪除額外層。
在窗口層111之上沈積電池B之各層：發射極層112及p型基極層113。該等層較佳地分別由InGaP及Ga(In)As構成，但亦可使用符合晶格常數及能帶隙要求之任何其他合適的材料。
在電池B之上沈積BSF層114，其執行與BSF層109相同之功能。類似於層110，在BSF層114上方沈積p＋＋/n＋＋隧道二極體115，從而再次形成將電池B連接至電池C之電路元件。
在隧道二極體115上方沈積障壁層116a(較佳地由InGa(Al)P構成)，到達大約1.0微米之厚度。此障壁層希望防止穿透位錯與進入中部子電池B及頂部子電池C之成長方向相反地或在進入底部子電池A之成長方向上傳播。障 壁層可為能帶隙能量大於或等於分級夾層116且厚度足以降低穿透位錯之傳播之III－V化合物半導體層的任何組合。典型材料係基於As、P、N或Sb之III－V半導體材料。
在障壁層116a上方沈積分級夾層或變質層116。層116較佳地係一系列在成分上階梯分級之InGaAlAs層，其具有希望實現自子電池B至子電池C之晶格常數過渡之單調變化的晶格常數。層116之能帶隙為1.5 eV，其符合略大於中部子電池B之能帶隙的值。
分級夾層可由服從平面內晶格參數大於或等於第二太陽能電池B之晶格參數且小於或等於第三太陽能電池C之晶格參數且能帶隙能量大於第二太陽能電池B之能帶隙能量之約束的基於As、P、N、Sb之III－V化合物半導體中之任一者構成。
在一個實施例中，如雲利斯(Wanless)等人之論文中所建議，階梯級含有9個在成分上分級之InGaP階梯，其中每一階梯層具有0.25微米之厚度。在較佳實施例中，層116由InGaAlAs構成，其在至少9個階梯上具有單調變化之晶格常數。
在本發明之另一實施例中，可在InGaAlAs變質層116上方沈積可選之第二障壁層116b。第二障壁層116b將具有與障壁層116a不同之成分，且再次基極區可為GaInAs、GaAsSb或GaInAsN。
在障壁層116b上方沈積窗口層117，此窗口層操作以降低子電池"C"中之重組損失。熟習此項技術者應明白，可 在不脫離本發明範疇的情況下在電池結構中添加或刪除額外層。
在窗口層117之上沈積電池C之各層：n＋發射極層118及p型基極層119。該等層較佳地分別由InGaP及Ga(In)As構成，但亦可使用符合晶格常數及能帶隙要求之其他合適的材料。
在電池C之上沈積BSF層120，該BSF層執行與BSF層109及114相同之功能。
最後，在BSF層120上沈積p＋接觸層121。
熟習此項技術者應明白，可在不脫離本發明範疇的情況下在電池結構中添加或刪除額外層。
圖2係在下一製程步驟之後之圖1之太陽能電池之橫截面圖，在該製程步驟中在p＋半導體接觸層121上方沈積金屬接觸層122。該金屬較佳地為Ti/Au/Ag/Au。
圖3係在下一製程步驟之後之圖2之太陽能電池之橫截面圖，在該製程步驟中在金屬層122上方沈積黏合層123。黏合劑較佳地為GenTak 330(由通用化學公司(General Chemical Corp.)發行)。
圖4係在下一製程步驟之後之圖3之太陽能電池之橫截面圖，在該製程步驟中附接替代基板(較佳地為藍寶石)。該替代基板之厚度約為40密耳，且穿孔有間隔開4 mm且直徑約為1 mm的孔以幫助隨後移除黏合劑及基板。
圖5A係在下一製程步驟之後之圖4之太陽能電池之橫截面圖，在該製程步驟中藉由研磨及/或蝕刻步驟序列移除 原始基板，在該步驟序列中移除基板101、緩衝層103及蝕刻終止層104。蝕刻劑係依賴於成長基板的。
圖5B係來自圖5A之太陽能電池的自替代基板124位於圖式底部之定向上之圖5A之太陽能電池之橫截面圖。
圖6A係其中實施太陽能電池之晶圓之俯視平面圖。
在每一電池中，存在網格線501(圖10中之橫截面中更明確展示)、互連匯流排502及接觸墊503。
圖6B係圖6A中所示之具有四個太陽能電池之晶圓之仰視平面圖。
圖7係在下一製程步驟之後之圖6A之晶圓之俯視平面圖，在該製程步驟中使用磷化物及砷化物蝕刻劑在每一電池之周邊周圍蝕刻出台面510。
圖8係圖5B之太陽能電池之簡化橫截面圖，其僅描繪位於替代基板124上方之幾個頂部層及下部層。
圖9係在下一製程步驟之後之圖8之太陽能電池之橫截面圖，在該製程步驟中藉由HCl/H2 O溶液移除蝕刻終止層104。
圖10係在下一製程步驟序列之後之圖9之太陽能電池之橫截面圖，在該製程步驟序列中在接觸層105上方放置光阻掩模(未圖示)以形成網格線501。網格線501經由蒸發作用沈積，且以微影方式進行圖案化並沈積在接觸層105上方。提離該掩模以形成金屬網格線501。
圖11係在下一製程步驟之後之圖10之太陽能電池之橫截面圖，在該製程步驟中網絡線用作掩模以使用檸檬酸/過 氧化物蝕刻混合物沿著表面向下蝕刻到達窗口層106。
圖12係在下一製程步驟之後之圖11之太陽能電池之橫截面圖，在該製程步驟中在晶圓之具有網格線501之"底"側之整個表面上方施加抗反射(ARC)介電塗層130。
圖13係在下一製程步驟之後之圖12之太陽能電池之橫截面圖，在該製程步驟中使用磷化物及砷化物蝕刻劑向下蝕刻台面501到達金屬層122。該圖式中之橫截面描繪為如自圖7所示之A－A平面所見。接著，將一或多個銀電極焊接至接觸墊。
圖14係在藉由EKC 922移除替代基板124及黏合劑123之後在下一製程步驟之後之圖13之太陽能電池之橫截面圖。替代基板中所提供之較佳穿孔具有0.033吋之直徑且分離0.152吋。
圖15係在下一製程步驟之後之圖14之太陽能電池之橫截面圖，在該製程步驟中在ARC層130上方施加黏合劑並向其附接玻璃罩。
圖16至18中提供本發明之效力之實驗指示。具有圖1中所示之類型但沒有障壁層116a及116b之結構經成長並製作為4 cm2 電池。進行外部量子效率(EQE)量測，且圖16所示之結果顯示中部子電池B之長波長響應低於所預期。此觀測暗示與成長方向相反之穿透位錯傳播可能係造成中部電池之效率降級的原因。Nomarski顯微術顯示晶格匹配子電池A之初始磊晶層上之未預期交叉影線(應變消除模式)。光致發光測圖進一步顯示中部子電池B之發光低於所預 期。陰極發光量測顯示穿透位錯密度在中部子電池B中較高，但穿透位錯不穿越頂部子電池A。該等量測符合圖16所示之EQE量測。
圖17說明根據本發明添加障壁層116a與不添加障壁層116a之三接點太陽能電池中之中間子電池之EQE量測的比較。子電池B(沒有障壁層)之曲線圖具有15.6 mA/cm2 之整合電流(AMO)及低於子電池D(具有障壁層)之EQE，子電池D具有17.4 mA/cm2 之整合電流(AMO)。
可藉由比較圖16及18之EQE曲線圖來瞭解在本發明之太陽能電池中使用障壁層之效力。圖16係沒有障壁層之圖1之太陽能電池之EQE，且圖18係具有障壁層之太陽能電池之EQE。圖18之太陽能電池之中部子電池B的電流(17.4 mA/cm2 )僅略微低於頂部子電池C的電流(18.4 mA/cm2 )。中部子電池及頂部子電池之如此緊密之電流匹配證明本發明之效力。
將瞭解，上文所描述之元件之每一者或者兩個或兩個以上元件一起亦可有效地應用於不同於上述類型構造之其他類型之構造中。
雖然本發明之較佳實施例利用具有頂部及底部電接觸之垂直子電池堆疊，但子電池或者可借助於通往子電池之間的橫向傳導半導體層之金屬接觸來接觸。此類布置可用於形成3端子、4端子及一般來說，n端子裝置。子電池可使用該等額外端子在電路中互連，使得每一子電池中之大部分可用光生電流密度可被有效使用，從而得到多接點電池 之高效率，儘管光生電流密度通常在各個子電池中有所不同。
如上面提及，本發明可利用一或多個同質接點電池或子電池，即其中p－n接點形成在p型半導體與n型半導體之間且該p型半導體與n型半導體兩者具有相同化學成分及相同能帶隙只是摻雜劑種類及類型不同的電池或子電池。具有p型及n型InGaP之子電池A係同質接點子電池之一個實例。或者，本發明可利用一或多個異質接點電池或子電池，即如此之電池或子電池：其中p－n接點形成在p型半導體與n型半導體之間，且該p型半導體與n型半導體除了在形成p－n接點之p型及n型區中利用不同摻雜劑種類及類型外，亦具有n型及n型區中之半導體材料之不同化學成分及/或p型區中之不同能帶隙能量。
窗口或BSF層之成分可利用服從晶格常數及能帶隙要求之其他半導體化合物，且可包含AlInP、AlAs、AlP、AlGaInP、AlGaAsP、AlGaInAs、AlGaInPAs、GaInP、GaInAs、GaInPAs、AlGaAs、AlInAs、AlInPAs、GaAsSb、AlAsSb、GaAlAsSb、AlInSb、GaInSb、AlGaInSb、AIN、GaN、InN、GaInN、AlGaInN、GaInNAs、AlGaInNAs、ZnSSe、CdSSe及類似材料，且仍在本發明精神內。
儘管已經將本發明說明並描述為在反向變質多接點太陽能電池中實施，但不希望其限於所展示之細節，因為可在不以任何方式脫離本發明精神的情況下作出各種修改及結 構變化。
在不作進一步分析的情況下，前文將全面顯示本發明之要旨，以使得其他人可藉由應用當前知識容易使其適用於各種應用，而不省略從先前技術之觀點來看適當地組成本發明之一般或特定態樣之基本特點的特徵，且因此，此類調適應當且希望在以下申請專利範圍之等效物之意義及範疇內來理解。
101‧‧‧基板
102‧‧‧成核層
103‧‧‧緩衝層
104‧‧‧蝕刻終止層
105‧‧‧接觸層
106‧‧‧窗口層
107‧‧‧發射極層
108‧‧‧p型基極層
109‧‧‧背面場("BSF")層
110‧‧‧隧道二極體層
111‧‧‧窗口層
112‧‧‧發射極層
113‧‧‧p型基極層
114‧‧‧BSF層
115‧‧‧p＋＋/n＋＋隧道二極體
116‧‧‧分級夾層或變質層
116a‧‧‧障壁層
116b‧‧‧第二障壁層
117‧‧‧窗口層
118‧‧‧n＋發射極層
119‧‧‧p型基極層
120‧‧‧BSF層
121‧‧‧p＋半導體接觸層
122‧‧‧金屬接觸層
123‧‧‧黏合層/黏合劑
124‧‧‧替代基板
130‧‧‧抗反射(ARC)介電塗層
501‧‧‧金屬網格線
502‧‧‧互連匯流排
503‧‧‧接觸墊
510‧‧‧台面
藉由結合附圖參看以下具體實施方式將更好且更全面地理解本發明，附圖中：圖1係根據本發明構造之太陽能電池之放大橫截面圖；圖2係在下一製程步驟之後之圖1之太陽能電池之橫截面圖；圖3係在下一製程步驟之後之圖2之太陽能電池之橫截面圖；圖4係在下一製程步驟之後之圖3之太陽能電池之橫截面圖；圖5A係在下一製程步驟之後之圖4之太陽能電池之橫截面圖，其中移除了原始基板；圖5B係圖5A之太陽能電池之另一橫截面圖，其中在該圖式之底部具有替代基板；圖6A係其中製作太陽能電池之晶圓之俯視平面圖；圖6B係其中製作太陽能電池之晶圓之仰視平面圖；圖7係在下一製程步驟之後之圖6B之晶圓之俯視平面 圖；圖8係在下一製程步驟之後之圖5A之太陽能電池之橫截面圖；圖9係在下一製程步驟之後之圖8之太陽能電池之橫截面圖；圖10係在下一製程步驟之後之圖9之太陽能電池之橫截面圖；圖11係在下一製程步驟之後之圖10之太陽能電池之橫截面圖；圖12係在下一製程步驟之後之圖11之太陽能電池之橫截面圖；圖13係在下一製程步驟之後之圖12之太陽能電池之橫截面圖；圖14係在下一製程步驟之後之圖13之太陽能電池之橫截面圖；圖15係在下一製程步驟之後之圖14之太陽能電池之橫截面圖；圖16係根據本發明沒有障壁層之反向變質太陽能電池之外部量子效率(EQE)曲線圖；圖17係具有及沒有障壁層之中部太陽能子電池之EQE曲線圖；以及圖18係根據本發明具有障壁層之反向變質太陽能電池之EQE曲線圖。
101‧‧‧基板
102‧‧‧成核層
103‧‧‧緩衝層
104‧‧‧蝕刻終止層
105‧‧‧接觸層
106‧‧‧窗口層
107‧‧‧發射極層
108‧‧‧p型基極層
109‧‧‧背面場("BSF")層
110‧‧‧隧道二極體層
111‧‧‧窗口層
112‧‧‧發射極層
113‧‧‧p型基極層
114‧‧‧BSF層
115‧‧‧p＋＋/n＋＋隧道二極體
116‧‧‧分級夾層或變質層
116a‧‧‧障壁層
116b‧‧‧第二障壁層
117‧‧‧窗口層
118‧‧‧n＋發射極層
119‧‧‧p型基極層
120‧‧‧BSF層
121‧‧‧p＋半導體接觸層

Claims (20)

  1. 一種形成多接點太陽能電池之方法，該方法包含：提供第一基板，其用於半導體材料之磊晶成長；在該基板上形成一第一太陽能子電池，其具有一第一能帶隙；在該第一太陽能子電池上方形成一第二太陽能子電池，其具有一小於該第一能帶隙之第二能帶隙；在該第二子電池上方形成一由InGa(Al)P構成之穿透位錯防止層；在該穿透位錯防止層上方且與該穿透位錯防止層直接相鄰處形成一由InGaAlAs構成之分級夾層，該分級夾層具有一大於該第二能帶隙且為1.5eV之第三能帶隙；以及在該分級夾層上方形成一第三太陽能子電池，其具有一小於該第二能帶隙之第四能帶隙，使得該第三子電池相對於該第二子電池為晶格失配，其中該穿透位錯防止層係經設置以防止穿透位錯之傳播進入太陽能子電池中。
  2. 如請求項1之方法，其中該穿透位錯防止層具有約1.0微米之厚度，且防止穿透位錯在與電池之成長相反之方向上或在電池之成長方向上傳播。
  3. 如請求項1之方法，其進一步包含在形成該第三太陽能子電池之前，在該分級夾層上方且與該分級夾層直接相鄰處形成一第二穿透位錯防止層。
  4. 如請求項3之方法，其中該第二穿透位錯防止層由具有 一大於或等於該分級夾層之能帶隙能量之能帶隙能量的任何基於As、P、N或Sb之III-V化合物半導體構成。
  5. 如請求項1之方法，其中該第一基板選自由鍺或GaAs組成之群組。
  6. 如請求項1之方法，其中該第一太陽能子電池由一InGa(Al)P發射極區及一InGa(Al)P基極區構成。
  7. 如請求項6之方法，其中該第二太陽能電池由一GaInP、GaInAs、GaAsSb或GaInAsN發射極區及一GaInAs、GaAsSb或GaInAsN基極區構成。
  8. 如請求項1之方法，其中該分級夾層服從平面內晶格參數大於或等於該第二太陽能電池之晶格參數且小於或等於該第三太陽能電池之晶格參數之約束。
  9. 如請求項6之方法，其中該第二太陽能子電池由一InGaP發射極區及一GaAs基極區構成。
  10. 如請求項8之方法，其中該分級夾層由具有單調變化之晶格常數之九個層階梯構成。
  11. 如請求項1之方法，其進一步包含在該第三太陽能子電池上方沈積一接觸層且該接觸層與該第三太陽能子電池形成電接觸。
  12. 如請求項11之方法，其進一步包含在該接觸層上方附接一替代第二基板且移除該第一基板。
  13. 如請求項12之方法，其進一步包含：將該接觸層圖案化為一網格；以及在該太陽能電池之周邊周圍蝕刻一凹槽，以便在該替 代第二基板上形成一台面結構。
  14. 一種多接點太陽能電池，其包含：一基板；一下部太陽能子電池，其位於該基板上且具有一第一能帶隙；一分級夾層，其係由InGaAlAs構成，位於該下部太陽能子電池上方，並具有一大於該第一能帶隙且為1.5eV之第二能帶隙；一穿透位錯防止層，其係由InGa(Al)P構成，其係經設置在該分級夾層上方且與該分級夾層直接相鄰處，以減小穿透位錯之傳播；以及一中部太陽能子電池，其位於該穿透位錯防止層上方且具有一小於該第二能帶隙且大於該第一能帶隙之第三能帶隙，該中部太陽能子電池相對於該下部子電池為晶格失配；以及一上部太陽能子電池，其設置在該中部太陽能子電池上方，並具有一大於該第三能帶隙之第四能帶隙。
  15. 如請求項14之太陽能電池，其中該穿透位錯防止層由具有一大於或等於該分級夾層之能帶隙能量之能帶隙能量。
  16. 如請求項14之太陽能電池，其進一步包含一第二穿透位錯防止層，其係設置在直接與該分級夾層相鄰處且位於該分級夾層與該下部子電池之間。
  17. 如請求項16之太陽能電池，其中該第二穿透位錯防止層由具有一大於或等於該分級夾層之能帶隙之能帶隙的任何基於As、P、N或Sb之III-V化合物半導體構成。
  18. 如請求項14之太陽能電池，其中該基板選自由鍺或GaAs組成之群組。
  19. 如請求項14之太陽能電池，其中該上部太陽能子電池由InGa(Al)P構成。
  20. 如請求項14之太陽能電池，其中該中部太陽能子電池由一GaInP、GaInAs、GaAsSb或GaInAsN發射極區及一GaInAs、GaAsSb或GaInAsN基極區構成。
TW097128500A 2007-09-24 2008-07-25 反向變質多接點太陽能電池之障壁層 TWI488314B (zh)

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