JP5215284B2 - 多接合型化合物半導体太陽電池 - Google Patents
多接合型化合物半導体太陽電池 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 182
- 150000001875 compounds Chemical class 0.000 title claims description 79
- 238000006243 chemical reaction Methods 0.000 claims description 42
- 239000000758 substrate Substances 0.000 description 46
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 36
- 239000000203 mixture Substances 0.000 description 36
- 238000010586 diagram Methods 0.000 description 24
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 23
- 238000005530 etching Methods 0.000 description 23
- 238000004519 manufacturing process Methods 0.000 description 16
- 238000011156 evaluation Methods 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 11
- 238000000034 method Methods 0.000 description 10
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 6
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 238000003917 TEM image Methods 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 239000011260 aqueous acid Substances 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- UIESIEAPEWREMY-UHFFFAOYSA-N hydridoarsenic(2.) (triplet) Chemical compound [AsH] UIESIEAPEWREMY-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000002618 waking effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0687—Multiple junction or tandem solar cells
- H01L31/06875—Multiple junction or tandem solar cells inverted grown metamorphic [IMM] multiple junction solar cells, e.g. III-V compounds inverted metamorphic multi-junction cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
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- Condensed Matter Physics & Semiconductors (AREA)
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- Computer Hardware Design (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Description
第2格子定数差比(%)=(100×(a3−a4))/(a3)
としたとき、第2格子定数差比の値が、0.12%〜0.80%であることが好ましい。
バッファ層41のn+型In0.490Ga0.510P層21とn型In0.535Ga0.465P層22とのGa組成xの差は0.045であり、他のInGaP層の2層間のGa組成xの差は、いずれも0.028である。
バッファ層41のn+型In0.490Ga0.510P層21とn型In0.535Ga0.465P層22とのGa組成xの差は0.045であり、他のInGaP層の2層間のGa組成xの差は、いずれも0.041である。
バッファ層41のn+型In0.490Ga0.510P層21とn型In0.523Ga0.477P層22とのGa組成xの差は0.033であり、他のInGaP層の2層間のGa組成xの差も、いずれも0.033である。
バッファ層41のn+型In0.490Ga0.510P層21とn型In0.555Ga0.445P層22とのGa組成xの差は0.065であり、他のInGaP層の2層間のGa組成xの差は、いずれも0.033である。
第1格子定数差比(%)=(100×(a1−a2))/(a1)・・・(1)
上記の式(1)において、a1はバッファ層41を形成する半導体層のうち、半導体層22(図12であればn型In0.535Ga0.465P層22a)の格子定数を示す。また、a2はバッファ層41を形成する半導体層のうち、ミドルセル40Bに最も近い位置に配置されている半導体層21(図12であればn+型In0.490Ga0.510P層21a)の格子定数を示す。
第2格子定数差比(%)=(100×(a3−a4))/(a3)・・・(2)
上記の式(2)において、a3はバッファ層41を構成する半導体層のうちボトムセル40Cに最も近い位置に配置されている半導体層30(図12であればn型In0.799Ga0.201P層30a)の格子定数を示す。また、a4はボトムセル40Cの格子定数を示す。
△・・・断面状態が良好
×・・・断面状態が不良
第2格子定数差比が0.12%〜0.80%で、ボトムセル40Cの断面状態が最良になり、望ましくは、0.15%以上であり0.74%以下の場合である。
Claims (5)
- 第1電極、第1セル、バッファ層、第2セル、第2電極を少なくとも含む多接合型化合物半導体太陽電池において、
前記第1電極は太陽光入射側に配置され、
前記第1セルと前記第2セルは、それぞれ異なる禁制帯幅を持つ光電変換層を有し、かつ前記第2セルの格子定数は前記第1セルの格子定数よりも大きく、
前記バッファ層は、複数の半導体層から構成されており、
前記複数の半導体層の格子定数は、それぞれ前記第1セル側から前記第2セル側にかけて順に大きくなり、
前記複数の半導体層のうち、前記第2セルに最も近い半導体層の格子定数は、前記第2セルの格子定数より大きく、
前記複数の半導体層のうち、隣接する2層の格子定数差が最も大きくなる2層は、前記バッファ層の中央より前記第1セルに近い側に位置していることを特徴とする多接合型化合物半導体太陽電池。 - 第1の禁制帯幅の光電変換層を有する第1セルと、
前記第1の禁制帯幅よりも小さい第2の禁制帯幅の光電変換層を有する第2セルと、
前記第1セルと前記第2セルとの間に形成されたバッファ層と、
前記第1セル側に配置された第1電極と、
前記第2セル側に配置された第2電極とを有する多接合型化合物半導体太陽電池において、
前記第2セルの格子定数は前記第1セルの格子定数よりも大きく、
前記バッファ層は、複数の半導体層から構成されており、
前記複数の半導体層の格子定数は、それぞれ前記第1セル側から前記第2セル側にかけて順に大きくなり、
前記複数の半導体層のうち、前記第2セルに最も近い半導体層の格子定数は、前記第2セルの格子定数より大きく、
前記複数の半導体層のうち、隣接する2層の格子定数差が最も大きくなる2層は、前記バッファ層の中央より前記第1セルに近い側に位置していることを特徴とする多接合型化合物半導体太陽電池。 - 前記格子定数差が最も大きくなる2層は、前記第1セルに最も近い2層であることを特徴とする請求項1または2に記載の多接合型化合物半導体太陽電池。
- 前記隣接する2層の格子定数差が最も大きくなる2層の、前記第2セル側の層の格子定数をa1、前記第1セル側の層の格子定数をa2としたとき、
前記格子定数a1と、前記格子定数a2との格子定数差が、0.015Å〜0.026Åであることを特徴とする請求項1〜3のいずれかに記載の多接合型化合物半導体太陽電池。 - 前記第2セルの格子定数をa4、前記第2セルに最も近い半導体層の格子定数をa3とし、
第2格子定数差比(%)=(100×(a3−a4))/(a3)
としたとき、
第2格子定数差比の値が、0.12%〜0.80%であることを特徴とする請求項1〜4のいずれかに記載の多接合型化合物半導体太陽電池。
Priority Applications (5)
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JP2009294377A JP5215284B2 (ja) | 2009-12-25 | 2009-12-25 | 多接合型化合物半導体太陽電池 |
PCT/JP2010/073572 WO2011078378A1 (ja) | 2009-12-25 | 2010-12-27 | 多接合型化合物半導体太陽電池 |
EP10839606.0A EP2518776A4 (en) | 2009-12-25 | 2010-12-27 | SOLAR CELL WITH COMPOUND MULTI-FUNCTION SEMICONDUCTORS |
CN201080064809.0A CN102782864B (zh) | 2009-12-25 | 2010-12-27 | 多结化合物半导体太阳能电池 |
US13/518,563 US8933326B2 (en) | 2009-12-25 | 2010-12-27 | Multijunction compound semiconductor solar cell |
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JP2009294377A JP5215284B2 (ja) | 2009-12-25 | 2009-12-25 | 多接合型化合物半導体太陽電池 |
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JP2011134952A JP2011134952A (ja) | 2011-07-07 |
JP5215284B2 true JP5215284B2 (ja) | 2013-06-19 |
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US (1) | US8933326B2 (ja) |
EP (1) | EP2518776A4 (ja) |
JP (1) | JP5215284B2 (ja) |
CN (1) | CN102782864B (ja) |
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TWI349371B (en) | 2007-02-13 | 2011-09-21 | Epistar Corp | An optoelectronical semiconductor device having a bonding structure |
US20090078311A1 (en) | 2007-09-24 | 2009-03-26 | Emcore Corporation | Surfactant Assisted Growth in Barrier Layers In Inverted Metamorphic Multijunction Solar Cells |
JP5148976B2 (ja) * | 2007-12-06 | 2013-02-20 | シャープ株式会社 | 積層型化合物半導体太陽電池 |
JP5570736B2 (ja) | 2009-02-06 | 2014-08-13 | シャープ株式会社 | 化合物半導体太陽電池の製造方法 |
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2009
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2010
- 2010-12-27 WO PCT/JP2010/073572 patent/WO2011078378A1/ja active Application Filing
- 2010-12-27 US US13/518,563 patent/US8933326B2/en not_active Expired - Fee Related
- 2010-12-27 EP EP10839606.0A patent/EP2518776A4/en not_active Withdrawn
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10026860B2 (en) | 2006-06-02 | 2018-07-17 | Solaero Technologies Corp. | Metamorphic layers in multijunction solar cells |
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EP2518776A4 (en) | 2013-10-09 |
US8933326B2 (en) | 2015-01-13 |
EP2518776A1 (en) | 2012-10-31 |
JP2011134952A (ja) | 2011-07-07 |
US20120247547A1 (en) | 2012-10-04 |
WO2011078378A1 (ja) | 2011-06-30 |
CN102782864B (zh) | 2015-05-13 |
CN102782864A (zh) | 2012-11-14 |
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