JP5570736B2 - 化合物半導体太陽電池の製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims description 166
- 150000001875 compounds Chemical class 0.000 title claims description 155
- 238000004519 manufacturing process Methods 0.000 title claims description 43
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 79
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 60
- 239000000758 substrate Substances 0.000 claims description 52
- 238000000034 method Methods 0.000 claims description 31
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 30
- 238000005530 etching Methods 0.000 description 29
- 238000010586 diagram Methods 0.000 description 21
- 239000007864 aqueous solution Substances 0.000 description 17
- 239000000203 mixture Substances 0.000 description 17
- 239000002184 metal Substances 0.000 description 16
- 238000010894 electron beam technology Methods 0.000 description 15
- 238000007740 vapor deposition Methods 0.000 description 15
- 238000000206 photolithography Methods 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 9
- 239000002253 acid Substances 0.000 description 7
- 239000000243 solution Substances 0.000 description 6
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 5
- 229910010413 TiO 2 Inorganic materials 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- UIESIEAPEWREMY-UHFFFAOYSA-N hydridoarsenic(2.) (triplet) Chemical compound [AsH] UIESIEAPEWREMY-UHFFFAOYSA-N 0.000 description 4
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- -1 GaAs compound Chemical class 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 239000011260 aqueous acid Substances 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
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Description
図1に、本発明の化合物半導体太陽電池の一例の模式的な断面構成図を示す。この化合物半導体太陽電池において、支持基板101(たとえば厚さ400μm)上には、金属層102、p型InGaAsからなるコンタクト層35(たとえば厚さ0.4μm)、p型InGaPからなるBSF層34(たとえば厚さ0.1μm)、p型InGaAsからなるベース層33(たとえば厚さ3μm)、n型InGaAsからなるエミッタ層32(たとえば厚さ0.1μm)およびn型InGaPからなる窓層31(たとえば厚さ0.1μm)、がこの順序で積層されている。ここで、p型InGaAsからなるベース層33とn型InGaAsからなるエミッタ層32との接合体からボトムセル40aが構成されている。なお、n型InGaPからなる窓層31の格子定数およびn型InGaAsからなるエミッタ層32の格子定数はそれぞれ、p型InGaAsからなるベース層33の格子定数と同等程度とされる。
格子定数差比(%)=(100×(a1−a2))/(a1) …(1)
上記の式(1)において、a1は、バッファ層を構成する化合物半導体層のうちボトムセルに最も近い位置に設置されている化合物半導体層(本実施の形態ではn型In0.82Ga0.18P層30)の格子定数を示す。
図5に、本発明の化合物半導体太陽電池の他の一例の模式的な断面構成図を示す。図5に示す構成の化合物半導体太陽電池においては、n型AlInGaPからなるエミッタ層324とp型AlInGaPからなるベース層323との接合体からトップセル40cが構成されている点に特徴がある。
図9に、本発明の化合物半導体太陽電池の他の一例の模式的な断面構成図を示す。図9に示す構成の化合物半導体太陽電池は、p型Ge基板上に化合物半導体層を成長させることによって形成されている点に特徴がある。
次に、n型GaAsからなるコンタクト層226上にフォトリソグラフィによりレジストパターンを形成した後、コンタクト層226の一部をアルカリ水溶液を用いたエッチングにより除去する。そして、残されたコンタクト層226の表面上に再度フォトリソグラフィによりレジストパターンを形成し、抵抗加熱蒸着装置およびEB(Electron Beam)蒸着装置を用いて、たとえばAuGe(12%)(たとえば厚さ0.1μm)/Ni(たとえば厚さ0.02μm)/Au(たとえば厚さ0.1μm)/Ag(たとえば厚さ5μm)の積層体からなる電極層128を形成する。
図13に、本発明の化合物半導体太陽電池の他の一例の模式的な断面構成図を示す。図13に示す構成の化合物半導体太陽電池は、p型Ge基板上に化合物半導体層を成長させることによって形成されており、n型AlInGaPからなるエミッタ層422とp型AlInGaPからなるベース層423との接合体からトップセル40cが構成されている点に特徴がある。
次に、n型GaAsからなるコンタクト層226上にフォトリソグラフィによりレジストパターンを形成した後、コンタクト層226の一部をアルカリ水溶液を用いたエッチングにより除去する。そして、残されたコンタクト層226の表面上に再度フォトリソグラフィによりレジストパターンを形成し、抵抗加熱蒸着装置およびEB(Electron Beam)蒸着装置を用いて、たとえばAuGe(12%)(たとえば厚さ0.1μm)/Ni(たとえば厚さ0.02μm)/Au(たとえば厚さ0.1μm)/Ag(たとえば厚さ5μm)の積層体からなる電極層128を形成する。
まず、図2に示すように、直径50mmのGaAs基板130をMOCVD装置内に設置し、このGaAs基板130上に、n型In0.48Ga0.52Pからなるエッチングストップ層131、厚さ0.4μmのn型GaAsからなるコンタクト層126、厚さ0.05μmのn型AlInPからなる窓層125、厚さ0.05μmのn型In0.48Ga0.52Pからなるエミッタ層124、厚さ0.65μmのp型In0.48Ga0.52Pからなるベース層123および厚さ0.4μmのp型AlInPからなるBSF層122をこの順にMOCVD法によりエピタキシャル成長させた。
次に、ボトムセル40aの評価を行なうために、上記のNo.1〜No.7の化合物半導体太陽電池のそれぞれから、p++型AlGaAs層112、p+型AlInP層113、BSF層114、ミドルセル40b、窓層117、トンネル接合層50b、BSF層122、トップセル40c、窓層125、コンタクト層126、反射防止膜127および電極層128を除去し、その後、露出したn++型In0.48Ga0.52P層111の表面に電極528を形成した。これにより、No.1〜No.7の化合物半導体太陽電池のそれぞれから、図17の模式的断面図に示す構成のNo.1〜No.7のサンプルをそれぞれ作製した。
上記のNo.1〜No.7の化合物半導体太陽電池のそれぞれの作製の途中において最表面に露出したp型InGaAsからなるコンタクト層35の表面状態を目視で観察した。また、上記のNo.1〜No.7のサンプルのそれぞれについて電流−電圧特性を測定し、その電流−電圧特性から開放電圧を測定した。その結果を表1、図18および図19に示す。
A…p型InGaAsからなるコンタクト層35の表面状態が良好。
B…p型InGaAsからなるコンタクト層35の表面状態が不良。
表1、図18および図19に示すように、No.3〜No.7の化合物半導体太陽電池は、No.2の化合物半導体太陽電池と比較して、p型InGaAsからなるコンタクト層35の表面状態に優れていた。
Claims (1)
- GaAs基板上にn型InGaPからなるエミッタ層とp型InGaPからなるベース層との接合体を含むトップセルを形成する工程と、
前記トップセル上にn型GaAsからなるエミッタ層とp型GaAsからなるベース層との接合体を含むミドルセルを形成する工程と、
前記ミドルセル上に、n型InGaPからなり、格子定数が57.80nm以上58.19nm以下である製造時の最上層を含むバッファ層を形成する工程と、
前記最上層上にn型InGaAsからなるエミッタ層とp型InGaAsからなるベース層との接合体を含むボトムセルを形成する工程と、
前記ボトムセル上に支持基板を貼り付ける工程と、
前記GaAs基板を除去する工程とを含み、
前記最上層と前記ボトムセルの前記p型InGaAsからなるベース層との格子定数差比が0.15%以上0.74%以下である、化合物半導体太陽電池の製造方法。
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US13/148,270 US20110290312A1 (en) | 2009-02-06 | 2010-02-02 | Compound semiconductor solar battery and method for manufacturing compound semiconductor solar battery |
PCT/JP2010/051389 WO2010090170A1 (ja) | 2009-02-06 | 2010-02-02 | 化合物半導体太陽電池および化合物半導体太陽電池の製造方法 |
EP10738502.3A EP2395564A4 (en) | 2009-02-06 | 2010-02-02 | COMPOSITE SOLAR CELLS AND METHOD FOR PRODUCING A COMPOSITE SOLAR CELL SOLAR CELL |
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JP5215284B2 (ja) * | 2009-12-25 | 2013-06-19 | シャープ株式会社 | 多接合型化合物半導体太陽電池 |
US8852994B2 (en) | 2010-05-24 | 2014-10-07 | Masimo Semiconductor, Inc. | Method of fabricating bifacial tandem solar cells |
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US20060180198A1 (en) * | 2005-02-16 | 2006-08-17 | Sharp Kabushiki Kaisha | Solar cell, solar cell string and method of manufacturing solar cell string |
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US20140060631A1 (en) | 2014-03-06 |
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EP2395564A1 (en) | 2011-12-14 |
US20110290312A1 (en) | 2011-12-01 |
EP2395564A4 (en) | 2013-10-09 |
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