CN112713211B - 一种硅基六结太阳电池及其制作方法 - Google Patents

一种硅基六结太阳电池及其制作方法 Download PDF

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CN112713211B
CN112713211B CN202011604327.1A CN202011604327A CN112713211B CN 112713211 B CN112713211 B CN 112713211B CN 202011604327 A CN202011604327 A CN 202011604327A CN 112713211 B CN112713211 B CN 112713211B
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杨文奕
张小宾
黄珊珊
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Zhongshan Dehua Chip Technology Co ltd
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Abstract

本发明公开了一种硅基六结太阳电池及其制作方法，硅基六结太阳电池包括：硅衬底；依次层叠设置于所述硅衬底上表面的Si子电池、第三隧穿结、GaInNAsP子电池、第四隧穿结、GaNAsP子电池、第五隧穿结和AlGaNP子电池；以及依次层叠设置于所述硅衬底下表面的第二隧穿结、AlGaNAs子电池、第一隧穿结和GaInNAsSb子电池。通过采用低成本的硅晶片作为多结太阳电池的衬底，并含氮的化合物与晶硅衬底相结合，可以制备晶格匹配的硅基六结太阳电池，理论极限效率可达50％以上，在降低多结太阳电池成本的同时，还提升了电池转换效率。

Description

一种硅基六结太阳电池及其制作方法
技术领域
本发明涉及太阳能电池领域，特别涉及一种硅基六结太阳电池及其制作方法。
背景技术
在各种技术的太阳电池中，III-V族化合物多结太阳电池的转换效率是最高的，然而由于化合物多结电池的制作成本较高，尤其是衬底常常依赖昂贵的锗衬底，导致多结太阳电池难以在大规模地面电站中广泛应用。
发明内容
本发明旨在至少解决现有技术中存在的技术问题之一。为此，本发明提出一种硅基六结太阳电池及其制作方法，能够降低制作成本并提升光电转换效率。
根据本发明第一方面实施例的一种硅基六结太阳电池，包括：硅衬底；依次层叠设置于所述硅衬底上表面的Si子电池、第三隧穿结、GaInNAsP子电池、第四隧穿结、GaNAsP子电池、第五隧穿结和AlGaNP子电池；以及依次层叠设置于所述硅衬底下表面的第二隧穿结、AlGaNAs子电池、第一隧穿结和GaInNAsSb子电池。
根据本发明第一方面实施例的硅基六结太阳电池，至少具有如下有益效果：通过采用低成本的硅晶片作为多结太阳电池的衬底，并含氮的化合物与晶硅衬底相结合，可以制备晶格匹配的硅基六结太阳电池，理论极限效率可达50％以上，在降低多结太阳电池成本的同时，还提升了电池转换效率。
根据本发明第一方面的一些实施例，所述AlGaNP子电池、GaNAsP子电池、GaInNAsP子电池、Si子电池的光学带隙分别为2.1eV、1.7eV、1.4eV和1.1eV。
根据本发明第一方面的一些实施例，所述AlGaNAs子电池和GaInNAsSb子电池的光学带隙分别为0.9eV和0.6eV。
根据本发明第一方面的一些实施例，所述硅衬底为双面抛光的p型单晶Si片。
根据本发明第一方面的一些实施例，所述第二隧穿结、AlGaNAs子电池、第一隧穿结和GaInNAsSb子电池、Si子电池、第三隧穿结、GaInNAsP子电池、第四隧穿结、GaNAsP子电池、第五隧穿结、AlGaNP子电池采用金属有机化学气相沉积技术或分子束外延技术在硅衬底上制备而成。
根据本发明第二方面实施例的一种硅基六结太阳电池制作方法，包括以下步骤：S100、选取硅衬底；S200、在所述硅衬底上表面制备依次层叠设置的Si子电池、第三隧穿结、GaInNAsP子电池、第四隧穿结、GaNAsP子电池、第五隧穿结和AlGaNP子电池；S300、翻转所述S200加工后的硅衬底，使其下表面朝上；S400、在所述硅衬底下表面依次层叠设置的第二隧穿结、AlGaNAs子电池、第一隧穿结和GaInNAsSb子电池。
根据本发明第二方面实施例的硅基六结太阳电池制作方法，至少具有如下有益效果：通过采用低成本的硅晶片作为多结太阳电池的衬底，并含氮的化合物与晶硅衬底相结合，可以制备晶格匹配的硅基六结太阳电池，理论极限效率可达50％以上，在降低多结太阳电池成本的同时，还提升了电池转换效率。
根据本发明第二方面的一些实施例，所述AlGaNP子电池、GaNAsP子电池、GaInNAsP子电池、Si子电池的光学带隙分别为2.1eV、1.7eV、1.4eV和1.1eV。
根据本发明第二方面的一些实施例，所述AlGaNAs子电池和GaInNAsSb子电池的光学带隙分别为0.9eV和0.6eV。
根据本发明第二方面的一些实施例，所述硅衬底为双面抛光的p型单晶Si片。
根据本发明第二方面的一些实施例，所述第二隧穿结、AlGaNAs子电池、第一隧穿结和GaInNAsSb子电池、Si子电池、第三隧穿结、GaInNAsP子电池、第四隧穿结、GaNAsP子电池、第五隧穿结、AlGaNP子电池采用金属有机化学气相沉积技术或分子束外延技术在硅衬底上制备而成。
本发明的附加方面和优点将在下面的描述中部分给出，部分将从下面的描述中变得明显，或通过本发明的实践了解到。
附图说明
本发明的上述和/或附加的方面和优点从结合下面附图对实施例的描述中将变得明显和容易理解，其中：
图1为本发明第一方面实施例的硅基六结太阳电池结构示意图；
图2为本发明第二方面实施例的硅基六结太阳电池制作方法流程图。
具体实施方式
下面详细描述本发明的实施例，所述实施例的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施例是示例性的，仅用于解释本发明，而不能理解为对本发明的限制。
在本发明的描述中，需要理解的是，涉及到方位描述，例如上、下、前、后、左、右等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。
参考图1所示，为本技术方案第一方面实施例的一种硅基六结太阳电池，包括：硅衬底；依次层叠设置于所述硅衬底上表面的Si子电池、第三隧穿结、GaInNAsP子电池、第四隧穿结、GaNAsP子电池、第五隧穿结和AlGaNP子电池；以及依次层叠设置于所述硅衬底下表面的第二隧穿结、AlGaNAs子电池、第一隧穿结和GaInNAsSb子电池。
本实施例通过采用低成本的硅晶片作为多结太阳电池的衬底，并含氮的化合物与晶硅衬底相结合，可以制备晶格匹配的硅基六结太阳电池，理论极限效率可达50％以上，在降低多结太阳电池成本的同时，还提升了电池转换效率。
在本发明第一方面的一些实施例中，所述AlGaNP子电池、GaNAsP子电池、GaInNAsP子电池、Si子电池的光学带隙分别为2.1eV、1.7eV、1.4eV和1.1eV，所述AlGaNAs子电池和GaInNAsSb子电池的光学带隙分别为0.9eV和0.6eV。将太阳光分成多个波段，依靠最表面的宽带隙AlGaNP子电池吸收高能量的太阳光，用最底层低带隙GaInNAsSb子电池吸收低能量光，改变了半导体单结电池只能有效吸收单一波段的局限性，从而拓宽了整个电池对太阳光的光谱响应波段，减少能量损失、从而提高光电转换效率。
在本发明第一方面的一些实施例中，所述硅衬底为双面抛光的p型单晶Si片，具体尺寸可以选用4寸。
在本发明第一方面的一些实施例中，所述第二隧穿结、AlGaNAs子电池、第一隧穿结和GaInNAsSb子电池、Si子电池、第三隧穿结、GaInNAsP子电池、第四隧穿结、GaNAsP子电池、第五隧穿结、AlGaNP子电池采用金属有机化学气相沉积技术(MOCVD)或分子束外延技术(MBE)在硅衬底上制备而成。
如图2所示，为本发明第二方面实施例的一种硅基六结太阳电池制作方法，包括以下步骤：S100、选取硅衬底；S200、在所述硅衬底上表面制备依次层叠设置的Si子电池、第三隧穿结、GaInNAsP子电池、第四隧穿结、GaNAsP子电池、第五隧穿结和AlGaNP子电池；S300、翻转所述S200加工后的硅衬底，使其下表面朝上；S400、在所述硅衬底下表面依次层叠设置的第二隧穿结、AlGaNAs子电池、第一隧穿结和GaInNAsSb子电池。
本实施例通过采用低成本的硅晶片作为多结太阳电池的衬底，并含氮的化合物与晶硅衬底相结合，可以制备晶格匹配的硅基六结太阳电池，理论极限效率可达50％以上，在降低多结太阳电池成本的同时，还提升了电池转换效率。
在本发明第二方面的一些实施例中，所述AlGaNP子电池、GaNAsP子电池、GaInNAsP子电池、Si子电池的光学带隙分别为2.1eV、1.7eV、1.4eV和1.1eV，所述AlGaNAs子电池和GaInNAsSb子电池的光学带隙分别为0.9eV和0.6eV。将太阳光分成多个波段，依靠最表面的宽带隙AlGaNP子电池吸收高能量的太阳光，用最底层低带隙GaInNAsSb子电池吸收低能量光，改变了半导体单结电池只能有效吸收单一波段的局限性，从而拓宽了整个电池对太阳光的光谱响应波段，减少能量损失、从而提高光电转换效率。
在本发明第二方面的一些实施例中，所述硅衬底为双面抛光的p型单晶Si片，具体尺寸可以选用4寸。
在本发明第二方面的一些实施例中，所述第二隧穿结、AlGaNAs子电池、第一隧穿结和GaInNAsSb子电池、Si子电池、第三隧穿结、GaInNAsP子电池、第四隧穿结、GaNAsP子电池、第五隧穿结、AlGaNP子电池采用金属有机化学气相沉积技术(MOCVD)或分子束外延技术(MBE)在硅衬底上制备而成。
在本说明书的描述中，参考术语“一个实施例”、“一些实施例”、“示意性实施例”、“示例”、“具体示例”、或“一些示例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本发明的至少一个实施例或示例中。在本说明书中，对上述术语的示意性表述不一定指的是相同的实施例或示例。而且，描述的具体特征、结构、材料或者特点可以在任何的一个或多个实施例或示例中以合适的方式结合。
尽管已经示出和描述了本发明的实施例，本领域的普通技术人员可以理解：在不脱离本发明的原理和宗旨的情况下可以对这些实施例进行多种变化、修改、替换和变型，本发明的范围由权利要求及其等同物限定。

Claims (9)

1.一种硅基六结太阳电池，其特征在于，由以下部分组成：
硅衬底；
依次层叠设置于所述硅衬底上表面的Si子电池、第三隧穿结、GaInNAsP子电池、第四隧穿结、GaNAsP子电池、第五隧穿结和AlGaNP子电池；
以及依次层叠设置于所述硅衬底下表面的第二隧穿结、AlGaNAs子电池、第一隧穿结和GaInNAsSb子电池；
所述AlGaNAs子电池和GaInNAsSb子电池的光学带隙分别为0.9eV和0.6eV。
2.根据权利要求1所述的硅基六结太阳电池，其特征在于：所述AlGaNP子电池、GaNAsP子电池、GaInNAsP子电池、Si子电池的光学带隙分别为2.1eV、1.7eV、1.4eV和1.1eV。
3.根据权利要求1所述的硅基六结太阳电池，其特征在于：所述硅衬底为双面抛光的p型单晶Si片。
4.根据权利要求1所述的硅基六结太阳电池，其特征在于：所述第二隧穿结、AlGaNAs子电池、第一隧穿结和GaInNAsSb子电池、Si子电池、第三隧穿结、GaInNAsP子电池、第四隧穿结、GaNAsP子电池、第五隧穿结、AlGaNP子电池采用金属有机化学气相沉积技术或分子束外延技术在硅衬底上制备而成。
5.一种硅基六结太阳电池制作方法，其特征在于，包括以下步骤：
S100、选取硅衬底；
S200、在所述硅衬底上表面制备依次层叠设置的Si子电池、第三隧穿结、GaInNAsP子电池、第四隧穿结、GaNAsP子电池、第五隧穿结和AlGaNP子电池；
S300、翻转所述S200加工后的硅衬底，使其下表面朝上；
S400、在所述硅衬底下表面制备依次层叠设置的第二隧穿结、AlGaNAs子电池、第一隧穿结和GaInNAsSb子电池。
6.根据权利要求5所述的硅基六结太阳电池制作方法，其特征在于：所述AlGaNP子电池、GaNAsP子电池、GaInNAsP子电池、Si子电池的光学带隙分别为2.1eV、1.7eV、1.4eV和1.1eV。
7.根据权利要求5或6所述的硅基六结太阳电池制作方法，其特征在于：所述AlGaNAs子电池和GaInNAsSb子电池的光学带隙分别为0.9eV和0.6eV。
8.根据权利要求5所述的硅基六结太阳电池制作方法，其特征在于，所述硅衬底为双面抛光的p型单晶Si片。
9.根据权利要求5所述的硅基六结太阳电池制作方法，其特征在于：所述第二隧穿结、AlGaNAs子电池、第一隧穿结和GaInNAsSb子电池、Si子电池、第三隧穿结、GaInNAsP子电池、第四隧穿结、GaNAsP子电池、第五隧穿结、AlGaNP子电池采用金属有机化学气相沉积技术或分子束外延技术在硅衬底上制备而成。
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