JP6040189B2 - Iv/iii−v族ハイブリッド合金を有する反転多接合太陽電池 - Google Patents
Iv/iii−v族ハイブリッド合金を有する反転多接合太陽電池 Download PDFInfo
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- 229910045601 alloy Inorganic materials 0.000 title claims description 14
- 239000000956 alloy Substances 0.000 title claims description 14
- 239000010410 layer Substances 0.000 claims description 369
- 239000000758 substrate Substances 0.000 claims description 84
- 239000004065 semiconductor Substances 0.000 claims description 66
- 238000004519 manufacturing process Methods 0.000 claims description 57
- 239000000463 material Substances 0.000 claims description 51
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 25
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 24
- 229910052732 germanium Inorganic materials 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 12
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 11
- 229910000756 V alloy Inorganic materials 0.000 claims description 7
- 239000012790 adhesive layer Substances 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 7
- 229910052785 arsenic Inorganic materials 0.000 claims description 6
- 229910052698 phosphorus Inorganic materials 0.000 claims description 5
- 240000002329 Inga feuillei Species 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 26
- 230000006798 recombination Effects 0.000 description 24
- 238000005215 recombination Methods 0.000 description 24
- 235000012431 wafers Nutrition 0.000 description 21
- 150000001875 compounds Chemical class 0.000 description 12
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 11
- 239000006059 cover glass Substances 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 230000005855 radiation Effects 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 5
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 241000894007 species Species 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- -1 GaInP Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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Description
太陽電池とも呼ばれる光電池から得られる太陽エネルギー発電電力は、主としてシリコン半導体技術により提供されてきた。しかしながら過去数年間においては、宇宙用装置のためのIII−V族化合物半導体多接合太陽電池の大量生産により、宇宙用としての使用だけでなく、地上設置用としての太陽エネルギー発電装置の技術が加速度的に発達してきた。シリコンと比較して、III−V族化合物半導体多接合装置は、製造は複雑になるが、高いエネルギー変換効率及び全体的に高い放射線耐性を有する。典型的な商業用III−V族化合物半導体多接合太陽電池は、1つの太陽、空気質量0(AM0)、照度の下で、27%を越えるエネルギー効率を有するが、シリコン技術は、最も効率的なものでも、一般的には同様の条件の下で約18%の効率しか得られない。強い太陽照射の下で(例えば、500倍)、商業的に入手可能な地上設置式装置におけるIII−V族化合物半導体多接合太陽電池は(AM1.5で)、37%を越えるエネルギー効率を有する。シリコン太陽電池と比較して、III−V族化合物半導体太陽電池により高い変換効率が得られる理由の一つは、異なるバンドギャップエネルギーを有する複数の光起電性領域を使用することにより、入射放射線のスペクトル分光を行うことができ、各々の領域からの電流を蓄積することができるからである。
もっと詳細に述べると、本発明は、半導体成長用基板を準備し、太陽電池を形成するための半導体物質層を、順に重ねられる状態で該半導体成長基板上に堆積し、該半導体成長用基板を取り除く、段階からなる太陽電池の製造方法であって、III−V族合金から形成されるエミッタ層及びベース層を有する補助電池を形成するための半導体物質層を堆積し、IV族合金から構成されるエミッタ層及びベース層を有する補助電池を形成するための半導体物質層を、III−V族合金から形成される前記半導体物質層の上に堆積する、ことを特徴とする太陽電池の製造方法を提供する。
102 バッファー層
103 エッチストップ層
104 接触層
105 ウインドウ層
106 エミッター層
107 ベース層
108 BSF層
109 トンネルダイオード層
110 ウインドウ層
Claims (20)
- 半導体成長用基板を準備し、
太陽電池を形成するための半導体物質層を、順に重ねられる状態で前記半導体成長基板上に堆積し、
前記半導体成長用基板を取り除く、
段階からなる太陽電池の製造方法であって、
III−V族合金から形成されるエミッタ層及びベース層を有する補助電池を形成するための半導体物質層を堆積し、
IV族合金から構成されるエミッタ層及びベース層を有する補助電池を形成するための半導体物質層を、III−V族合金から形成される前記半導体物質層の上に堆積する
ことを特徴とする太陽電池の製造方法。 - 前記IV族合金は、GeSiSnであることを特徴とする請求項1に記載の方法。
- 前記GeSiSnにより形成される補助電池は、0.73eVから1.2eVの範囲のバンドギャップを
有することを特徴とする請求項2に記載の方法。 - 前記太陽電池はハイブリッド太陽電池であり、前記GeSiSnにより形成される前記補助電池上に堆積されたゲルマニウムから構成される補助電池を更に含むことを特徴とする請求項3に記載の方法。
- IV族合金から形成される前記層は、0.91eVから0.95eVの範囲のバンドギャップを有する第一GeSiSn補助電池と、1.13eVから1.24eVの範囲のバンドギャップを有する第二GeSiSn補助電池とを含むことを特徴とする請求項1に記載の方法。
- III−V族合金から形成される前記半導体物質の層を堆積する前記段階は、第一バンドギャップを有する前記基板上に第一補助太陽電池を形成する段階と、前記第一補助太陽電池上に前記第一バンドギャップより小さい第二バンドギャップを有する第二補助太陽電池を形成する段階とを含み、IV族合金から構成される前記半導体物質の層を形成する前記段階は、前記第二補助太陽電池上に前記第二バンドギャップより小さい第三バンドギャップを有する第三補助太陽電池を形成する段階を含むことを特徴とする請求項1に記載の方法。
- IV族合金から構成される前記半導体物質の層を形成する前記段階は、前記第三バンドギャップより小さい第四バンドギャップを有し、前記第三補助太陽電池と格子整合状態の第四補助太陽電池を形成する段階を更に含むことを特徴とする請求項6に記載の方法。
- IV族合金から構成される前記半導体物質の層を形成する前記段階は、前記第四補助太陽電池上に、前記第四バンドギャップより小さい第五バンドギャップを有する第五補助太陽電池を形成する段階を更に含むことを特徴とする請求項7に記載の方法。
- IV族合金から構成される前記半導体物質の層を形成する前記段階は、前記第五補助太陽電池上に、前記第五バンドギャップより小さい第六バンドギャップを有する第六補助太陽電池を形成する段階を更に含むことを特徴とする請求項8に記載の方法。
- IV族合金から構成される前記半導体物質の層を形成する前記段階は、前記第六補助太陽電池上に、前記第六バンドギャップより小さい第七バンドギャップを有する第七補助太陽電池を形成する段階を更に含むことを特徴とする請求項9に記載の方法。
- 順に重ねられた前記半導体物質の層上に接着層を付与し、前記接着層に代替基板を取り付けることを更に含むことを特徴とする請求項1に記載の方法。
- 前記半導体成長用基板は、前記代替基板が取り付けられた後、研磨、エッチング、又はエピタキシャル除去により取り除かれることを特徴とする請求項11に記載の方法。
- 前記半導体成長用基板は、GaAs及びGeから成るグループから選択されることを特徴とする請求項1に記載の方法。
- 前記太陽電池はハイブリッド太陽電池であり、前記第一補助太陽電池は、InGa(Al)Pエミッター領域とInGa(Al)Pベース領域により構成され、前記第二補助太陽電池は、GaAs、InGaAsP、又はInGaPにより構成され、前記第三補助太陽電池は、GeSiSn、InGaP、又はGaAsにより構成されることを特徴とする請求項6に記載の方法。
- 前記第四補助太陽電池は、Ge、GeSiSn、又はGaAsにより構成されることを特徴とする請求項7に記載の方法。
- 前記第五補助太陽電池は、Ge又はGeSiSnにより構成されることを特徴とする請求項8に記載の方法。
- 前記IV族合金層内にAs及びPの少なくとも一つを拡散することにより、前記IV族合金内に接合を形成して、光起電性の補助電池を形成することを特徴とする請求項1に記載の方法。
- 前記IV族合金により構成される前記補助電池に隣接して、IV族合金により構成されるウインドウ層及びBSF層を形成することを特徴とする請求項1に記載の方法。
- 半導体成長基板を準備し、
順に重ねられた半導体物質層を前記半導体成長基板上に堆積して、太陽電池を形成し、
前記順に重ねられた層上に金属接触層を付与し、
前記金属接触層上に、直接支持部材を付与する、
段階からなるハイブリッド太陽電池の製造方法であって、
III−V族合金から形成されるエミッタ層及びベース層を有する補助電池を形成するための半導体物質層を堆積し、
前記III−V族合金から形成される半導体物質層上に、エミッタ層及びベース層を有する補助電池を形成するための、GeSiSnにより構成される半導体層を少なくとも1つ堆積し、
該GeSiSn層上に、エミッタ層及びベース層を有する補助電池を形成するための、Geにより構成される半導体層を少なくとも1つ堆積することを特徴とするハイブリッド太陽電池の製造方法。 - InGaP又はInGaAlPにより構成され、第一バンドギャップを有する第一補助太陽電池と、
GaAs、InGaAsP、又はInGaPにより構成され、前記第一補助太陽電池上に堆積され、前記第一バンドギャップより小さい第二バンドギャップを有し、前記第一補助太陽電池と格子整合状態である第二補助太陽電池と、
GeSiSnにより構成されたエミッタ層及びベース層の少なくとも一つを有し、前記第二補助太陽電池上に堆積され、前記第二バンドギャップより小さい第三バンドギャップを有し、前記第二補助太陽電池に対して格子整合状態である第三補助太陽電池と、
を含むことを特徴とするハイブリッド多接合太陽電池。
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