CN112713211B - Silicon-based six-junction solar cell and manufacturing method thereof - Google Patents

Silicon-based six-junction solar cell and manufacturing method thereof Download PDF

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CN112713211B
CN112713211B CN202011604327.1A CN202011604327A CN112713211B CN 112713211 B CN112713211 B CN 112713211B CN 202011604327 A CN202011604327 A CN 202011604327A CN 112713211 B CN112713211 B CN 112713211B
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battery
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cell
silicon
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CN112713211A (en
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杨文奕
张小宾
黄珊珊
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Zhongshan Dehua Chip Technology Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0725—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0735—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/074—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a heterojunction with an element of Group IV of the Periodic System, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1876—Particular processes or apparatus for batch treatment of the devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention discloses a silicon-based six-junction solar cell and a manufacturing method thereof, wherein the silicon-based six-junction solar cell comprises the following components: a silicon substrate; the Si sub-battery, the third tunnel junction, the GaInNAsP sub-battery, the fourth tunnel junction, the GaNAsP sub-battery, the fifth tunnel junction and the AlGaNP sub-battery are sequentially stacked and arranged on the upper surface of the silicon substrate; and the second tunneling junction, the AlGaNAs sub-battery, the first tunneling junction and the GaInNAsSb sub-battery are sequentially stacked and arranged on the lower surface of the silicon substrate. By adopting the low-cost silicon wafer as the substrate of the multi-junction solar cell and combining the nitrogen-containing compound with the crystalline silicon substrate, the silicon-based six-junction solar cell with lattice matching can be prepared, the theoretical limit efficiency can reach more than 50 percent, and the conversion efficiency of the cell is improved while the cost of the multi-junction solar cell is reduced.

Description

Silicon-based six-junction solar cell and manufacturing method thereof
Technical Field
The invention relates to the field of solar cells, in particular to a silicon-based six-junction solar cell and a manufacturing method thereof.
Background
The conversion efficiency of III-V compound multijunction solar cells is the highest among solar cells of various technologies, however, the multijunction solar cells are difficult to be widely applied in large-scale ground power stations due to the high manufacturing cost of the compound multijunction cells, especially because the substrates often depend on expensive germanium substrates.
Disclosure of Invention
The present invention is directed to solving at least one of the problems of the prior art. Therefore, the invention provides a silicon-based six-junction solar cell and a manufacturing method thereof, which can reduce the manufacturing cost and improve the photoelectric conversion efficiency.
According to an embodiment of the first aspect of the invention, a silicon-based six-junction solar cell comprises: a silicon substrate; the Si sub-battery, the third tunnel junction, the GaInNAsP sub-battery, the fourth tunnel junction, the GaNAsP sub-battery, the fifth tunnel junction and the AlGaNP sub-battery are sequentially stacked and arranged on the upper surface of the silicon substrate; and the second tunneling junction, the AlGaNAs sub-battery, the first tunneling junction and the GaInNAsSb sub-battery are sequentially stacked and arranged on the lower surface of the silicon substrate.
The silicon-based six-junction solar cell according to the embodiment of the first aspect of the invention has at least the following beneficial effects: by adopting the low-cost silicon wafer as the substrate of the multi-junction solar cell and combining the nitrogen-containing compound with the crystalline silicon substrate, the silicon-based six-junction solar cell with lattice matching can be prepared, the theoretical limit efficiency can reach more than 50 percent, and the conversion efficiency of the cell is improved while the cost of the multi-junction solar cell is reduced.
According to some embodiments of the first aspect of the present invention, the algainp, GaNAsP, GaInNAsP, Si subcells have optical bandgaps of 2.1eV, 1.7eV, 1.4eV and 1.1eV, respectively.
According to some embodiments of the first aspect of the present invention, the algainas and GaInNAsSb subcells have optical bandgaps of 0.9eV and 0.6eV, respectively.
According to some embodiments of the first aspect of the present invention, the silicon substrate is a double-side polished p-type single crystal Si wafer.
According to some embodiments of the first aspect of the present invention, the second tunnel junction, the algaas sub-cell, the first tunnel junction and the GaInNAsSb sub-cell, the Si sub-cell, the third tunnel junction, the GaInNAsP sub-cell, the fourth tunnel junction, the GaNAsP sub-cell, the fifth tunnel junction, and the algainp sub-cell are fabricated on a silicon substrate using a metal organic chemical vapor deposition technique or a molecular beam epitaxy technique.
According to a second aspect of the invention, a method for manufacturing a silicon-based six-junction solar cell comprises the following steps: s100, selecting a silicon substrate; s200, preparing a Si sub-battery, a third tunnel junction, a GaInNAsP sub-battery, a fourth tunnel junction, a GaNAsP sub-battery, a fifth tunnel junction and an AlGaNP sub-battery which are sequentially stacked on the upper surface of the silicon substrate; s300, turning over the silicon substrate processed in the S200 to enable the lower surface of the silicon substrate to face upwards; s400, sequentially stacking a second tunneling junction, an AlGaNAs sub-battery, a first tunneling junction and a GaInNAsSb sub-battery on the lower surface of the silicon substrate.
The method for manufacturing the silicon-based six-junction solar cell according to the embodiment of the second aspect of the invention has at least the following beneficial effects: by adopting the low-cost silicon wafer as the substrate of the multi-junction solar cell and combining the nitrogen-containing compound with the crystalline silicon substrate, the silicon-based six-junction solar cell with lattice matching can be prepared, the theoretical limit efficiency can reach more than 50 percent, and the conversion efficiency of the cell is improved while the cost of the multi-junction solar cell is reduced.
According to some embodiments of the second aspect of the present invention, the algainp, GaNAsP, GaInNAsP, Si subcells have optical bandgaps of 2.1eV, 1.7eV, 1.4eV and 1.1eV, respectively.
According to some embodiments of the second aspect of the invention, the algainas and GaInNAsSb subcells have optical bandgaps of 0.9eV and 0.6eV, respectively.
According to some embodiments of the second aspect of the present invention, the silicon substrate is a double-side polished p-type single crystal Si wafer.
According to some embodiments of the second aspect of the present invention, the second tunnel junction, the algaas sub-cell, the first tunnel junction and the GaInNAsSb sub-cell, the Si sub-cell, the third tunnel junction, the GaInNAsP sub-cell, the fourth tunnel junction, the GaNAsP sub-cell, the fifth tunnel junction, and the algainp sub-cell are fabricated on a silicon substrate using a metal organic chemical vapor deposition technique or a molecular beam epitaxy technique.
Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
Drawings
The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
fig. 1 is a schematic structural diagram of a silicon-based six-junction solar cell according to an embodiment of the present invention;
fig. 2 is a flow chart of a method for fabricating a silicon-based six-junction solar cell according to a second aspect of the present invention.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.
In the description of the present invention, it should be understood that the orientation or positional relationship referred to in the description of the orientation, such as the upper, lower, front, rear, left, right, etc., is based on the orientation or positional relationship shown in the drawings, and is only for convenience of description and simplification of description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention.
Referring to fig. 1, a silicon-based six-junction solar cell according to an embodiment of the first aspect of the present disclosure includes: a silicon substrate; the Si sub-battery, the third tunnel junction, the GaInNAsP sub-battery, the fourth tunnel junction, the GaNAsP sub-battery, the fifth tunnel junction and the AlGaNP sub-battery are sequentially stacked and arranged on the upper surface of the silicon substrate; and the second tunneling junction, the AlGaNAs sub-battery, the first tunneling junction and the GaInNAsSb sub-battery are sequentially stacked and arranged on the lower surface of the silicon substrate.
According to the embodiment, the silicon wafer with low cost is used as the substrate of the multi-junction solar cell, and the nitrogen-containing compound is combined with the crystalline silicon substrate, so that the silicon-based six-junction solar cell with lattice matching can be prepared, the theoretical limit efficiency can reach more than 50%, and the conversion efficiency of the cell is improved while the cost of the multi-junction solar cell is reduced.
In some embodiments of the first aspect of the present invention, the optical bandgaps of the algainp, GaNAsP, GaInNAsP, Si subcells are 2.1eV, 1.7eV, 1.4eV, and 1.1eV, respectively, and the optical bandgaps of the algainas and GaInNAsSb subcells are 0.9eV and 0.6eV, respectively. The sunlight is divided into a plurality of wave bands, the sunlight with high energy is absorbed by the wide band gap AlGaNP sub-cell on the outermost surface, and the low energy light is absorbed by the low band gap GaInNAsSb sub-cell on the bottommost layer, so that the limitation that the semiconductor single junction cell can only effectively absorb a single wave band is changed, the spectral response wave band of the whole cell to the sunlight is widened, the energy loss is reduced, and the photoelectric conversion efficiency is improved.
In some embodiments of the first aspect of the present invention, the silicon substrate is a double-side polished p-type single crystal Si wafer, and the specific dimension may be 4 inches.
In some embodiments of the first aspect of the present invention, the second tunnel junction, the algaas sub-cell, the first tunnel junction and the GaInNAsSb sub-cell, the Si sub-cell, the third tunnel junction, the GaInNAsP sub-cell, the fourth tunnel junction, the GaNAsP sub-cell, the fifth tunnel junction, and the algainp sub-cell are fabricated on a silicon substrate using Metal Organic Chemical Vapor Deposition (MOCVD) or Molecular Beam Epitaxy (MBE).
As shown in fig. 2, a method for fabricating a silicon-based six-junction solar cell according to a second embodiment of the present invention includes the following steps: s100, selecting a silicon substrate; s200, preparing a Si sub-battery, a third tunnel junction, a GaInNAsP sub-battery, a fourth tunnel junction, a GaNAsP sub-battery, a fifth tunnel junction and an AlGaNP sub-battery which are sequentially stacked on the upper surface of the silicon substrate; s300, turning over the silicon substrate processed in the S200 to enable the lower surface of the silicon substrate to face upwards; s400, sequentially stacking a second tunneling junction, an AlGaNAs sub-battery, a first tunneling junction and a GaInNAsSb sub-battery on the lower surface of the silicon substrate.
According to the embodiment, the silicon wafer with low cost is used as the substrate of the multi-junction solar cell, and the nitrogen-containing compound is combined with the crystalline silicon substrate, so that the silicon-based six-junction solar cell with lattice matching can be prepared, the theoretical limit efficiency can reach more than 50%, and the conversion efficiency of the cell is improved while the cost of the multi-junction solar cell is reduced.
In some embodiments of the second aspect of the present invention, the optical bandgaps of the algainp, GaNAsP, GaInNAsP, Si subcells are 2.1eV, 1.7eV, 1.4eV, and 1.1eV, respectively, and the optical bandgaps of the algainas and GaInNAsSb subcells are 0.9eV and 0.6eV, respectively. The sunlight is divided into a plurality of wave bands, the sunlight with high energy is absorbed by the wide band gap AlGaNP sub-cell on the outermost surface, and the low energy light is absorbed by the low band gap GaInNAsSb sub-cell on the bottommost layer, so that the limitation that the semiconductor single junction cell can only effectively absorb a single wave band is changed, the spectral response wave band of the whole cell to the sunlight is widened, the energy loss is reduced, and the photoelectric conversion efficiency is improved.
In some embodiments of the second aspect of the present invention, the silicon substrate is a double-side polished p-type single crystal Si wafer, and the specific dimension may be 4 inches.
In some embodiments of the second aspect of the present invention, the second tunnel junction, the algaas subcell, the first tunnel junction and the GaInNAsSb subcell, the Si subcell, the third tunnel junction, the GaInNAsP subcell, the fourth tunnel junction, the GaNAsP subcell, the fifth tunnel junction, and the algainp subcell are fabricated on a silicon substrate using Metal Organic Chemical Vapor Deposition (MOCVD) or Molecular Beam Epitaxy (MBE) techniques.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples" or the like mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
While embodiments of the invention have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.

Claims (9)

1. A silicon-based six-junction solar cell is characterized by comprising the following parts:
a silicon substrate;
the Si sub-battery, the third tunnel junction, the GaInNAsP sub-battery, the fourth tunnel junction, the GaNAsP sub-battery, the fifth tunnel junction and the AlGaNP sub-battery are sequentially stacked and arranged on the upper surface of the silicon substrate;
the second tunneling junction, the AlGaNAs sub-battery, the first tunneling junction and the GaInNAsSb sub-battery are sequentially stacked and arranged on the lower surface of the silicon substrate;
the optical band gaps of the AlGaNAs sub-cell and the GaInNAsSb sub-cell are 0.9eV and 0.6eV respectively.
2. The silicon-based six-junction solar cell of claim 1, wherein: the optical band gaps of the AlGaNP sub-cell, the GaNAsP sub-cell, the GaInNAsP sub-cell and the Si sub-cell are respectively 2.1eV, 1.7eV, 1.4eV and 1.1 eV.
3. The silicon-based six-junction solar cell of claim 1, wherein: the silicon substrate is a p-type single crystal Si wafer with two polished sides.
4. The silicon-based six-junction solar cell of claim 1, wherein: the second tunnel junction, the AlGaNAs sub-battery, the first tunnel junction, the GaInNAsSb sub-battery, the Si sub-battery, the third tunnel junction, the GaInNAsP sub-battery, the fourth tunnel junction, the GaNAsP sub-battery, the fifth tunnel junction and the AlGaNP sub-battery are prepared on the silicon substrate by adopting a metal organic chemical vapor deposition technology or a molecular beam epitaxy technology.
5. A manufacturing method of a silicon-based six-junction solar cell is characterized by comprising the following steps:
s100, selecting a silicon substrate;
s200, preparing a Si sub-battery, a third tunnel junction, a GaInNAsP sub-battery, a fourth tunnel junction, a GaNAsP sub-battery, a fifth tunnel junction and an AlGaNP sub-battery which are sequentially stacked on the upper surface of the silicon substrate;
s300, turning over the silicon substrate processed in the S200 to enable the lower surface of the silicon substrate to face upwards;
s400, preparing a second tunneling junction, an AlGaNAs sub-battery, a first tunneling junction and a GaInNAsSb sub-battery which are sequentially stacked on the lower surface of the silicon substrate.
6. The method of claim 5, wherein: the optical band gaps of the AlGaNP sub-cell, the GaNAsP sub-cell, the GaInNAsP sub-cell and the Si sub-cell are respectively 2.1eV, 1.7eV, 1.4eV and 1.1 eV.
7. The method for manufacturing a silicon-based six-junction solar cell according to claim 5 or 6, wherein: the optical band gaps of the AlGaNAs sub-cell and the GaInNAsSb sub-cell are 0.9eV and 0.6eV respectively.
8. The method for manufacturing the silicon-based six-junction solar cell according to claim 5, wherein the silicon substrate is a p-type single crystal Si wafer with two polished sides.
9. The method of claim 5, wherein: the second tunnel junction, the AlGaNAs sub-battery, the first tunnel junction, the GaInNAsSb sub-battery, the Si sub-battery, the third tunnel junction, the GaInNAsP sub-battery, the fourth tunnel junction, the GaNAsP sub-battery, the fifth tunnel junction and the AlGaNP sub-battery are prepared on the silicon substrate by adopting a metal organic chemical vapor deposition technology or a molecular beam epitaxy technology.
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CN104541379A (en) * 2012-06-22 2015-04-22 埃皮沃克斯股份有限公司 Manufacturing semiconductor-based multi-junction photovoltaic devices
CN109148622A (en) * 2018-08-15 2019-01-04 中山德华芯片技术有限公司 A kind of two-sided high performance solar batteries and preparation method thereof
CN110911510A (en) * 2019-11-20 2020-03-24 电子科技大学中山学院 Silicon-based nitride five-junction solar cell containing superlattice structure
CN112038425A (en) * 2019-06-03 2020-12-04 中国科学院苏州纳米技术与纳米仿生研究所 Multi-junction laminated laser photovoltaic cell

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US9214580B2 (en) * 2010-10-28 2015-12-15 Solar Junction Corporation Multi-junction solar cell with dilute nitride sub-cell having graded doping
US9899556B2 (en) * 2015-09-14 2018-02-20 Wisconsin Alumni Research Foundation Hybrid tandem solar cells with improved tunnel junction structures
CN109148621B (en) * 2018-08-15 2020-04-07 中山德华芯片技术有限公司 Double-sided growth efficient six-junction solar cell and preparation method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104541379A (en) * 2012-06-22 2015-04-22 埃皮沃克斯股份有限公司 Manufacturing semiconductor-based multi-junction photovoltaic devices
CN109148622A (en) * 2018-08-15 2019-01-04 中山德华芯片技术有限公司 A kind of two-sided high performance solar batteries and preparation method thereof
CN112038425A (en) * 2019-06-03 2020-12-04 中国科学院苏州纳米技术与纳米仿生研究所 Multi-junction laminated laser photovoltaic cell
CN110911510A (en) * 2019-11-20 2020-03-24 电子科技大学中山学院 Silicon-based nitride five-junction solar cell containing superlattice structure

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