JP2007324563A - 多接合太陽電池における変成層 - Google Patents
多接合太陽電池における変成層 Download PDFInfo
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Abstract
【解決手段】半導体材料のエピタキシャル成長のための第1の基板を準備する段階と、基板上に第1のバンドギャップを有する第1の太陽電池サブセルを形成する段階と、第1のサブセルの上に第1のバンドギャップよりも小さい第2のバンドギャップを有する第2の太陽電池サブセルを形成する段階と、第2のサブセルの上に第2のバンドギャップよりも大きい第3のバンドギャップを有する漸変中間層を形成する段階と、第2のバンドギャップよりも小さい第4のバンドギャップを有する第3の太陽電池サブセルを形成し、そのために第3のサブセルが第2のサブセルに対して格子不整合であるようにする段階とを含む、上部サブセル、中間サブセル、及び下部サブセルを含む多接合太陽電池を形成する方法。
【選択図】図1
Description
米国政府は、世界中で米国のために又は米国の代わりに本発明を実施するか又は実施したことに対して、DFAR227−12(1997年1月)の条項に従ってある一定の権利を有する。
本発明は、太陽電池半導体素子の分野、特に、変成層を有する多接合太陽電池を含む集積半導体構造に関する。
太陽電池は、多くの場合に、垂直の多接合構造の状態で製造され、個々の太陽電池が互いに連続に接続した水平アレイの状態に配置される。アレイの形状及び構造、並びにそれが含むセルの数は、望ましい出力電圧及び電流によってある程度判断される。
本発明の目的は、改良された多接合太陽電池を提供することである。
本発明の目的は、改良された反転変成太陽電池を提供することである。
本発明の別の目的は、第2のサブセルと第3の格子不整合サブセルの間に太陽電池のエネルギ効率を最大にする中間層を多重セル構造に設けることである。
本発明の更に別の目的は、薄い可撓性フィルムとして反転変成太陽電池を製造する方法を提供することである。
簡単かつ概略的には、本発明は、上面を有する半導体本体と、上面上に配置された多接合太陽電池と、基板上の第1のバンドギャップを有する第1の太陽電池サブセルと、第1のサブセルの上に配置され、第1のバンドギャップよりも小さい第2のバンドギャップを有する第2の太陽電池サブセルと、第2のバンドギャップよりも大きい第3のバンドギャップを有する第2のサブセル中間層の上に配置された漸変中間層、及び第2のサブセルに対して格子不整合であり、かつ第3のバンドギャップよりも小さい第4のバンドギャップを有するような第2の太陽電池サブセルの上の第3の太陽電池サブセルとを含む太陽電池を提供する。
本発明の上記及び他の特徴及び利点は、添付図面と共に以下の詳細説明を参照するとより良くかつより完全に認められるであろう。
基部層108の上には、再結合損失を低減するために使用される裏面電界(BSF)層109が堆積される。
BSF層109は、基部/BSFインタフェース面の近くの領域から少数キャリアを追い出し、再結合損失の影響を最小にする。換言すれば、BSF層109は、太陽電池サブセルAの背面での再結合損失を低減し、それによって基部内の再結合を低減する。
トンネルダイオード110の上には、窓層111が堆積される。サブセルBに使用される窓層111もまた再結合損失を低減するように機能する。窓層111はまた、下に重なる接合部のセル表面の不動態化もまた改善する。本発明の範囲を逸脱することなく、セル構造内の更に別の層を付加又は除去することができることは、当業者には明らかであるべきである。
セルBの上には、BSF層114が堆積され、これは、BSF層109と同じ機能を果たす。層110と同様なp++/n++トンネルダイオード115がBSFの上に堆積され、セルBとセルCを接続する回路がこの場合も形成される。好ましくはInGaAsであるバッファ層115aが、トンネルダイオード115の上に約1.0ミクロンの厚みまで堆積される。変成バッファ層116がバッファ層115aの上に堆積され、これは、好ましくは、組成が段階的に漸変するInGaAlAsの層であり、セルBからサブセルCまでの格子定数の遷移を達成するように単調変化する格子定数を有する。層116のバンドギャップは、一定の1.5eVであり、この値は、中間セルBのバンドギャップよりも僅かに大きい。
一実施形態では、Wanless他の論文で示唆されたように、段階的漸変は、9段階の組成変化を含み、各段階の層は、0.25ミクロンの厚みを有する。好ましい実施形態では、この中間層は、単調変化する格子定数を有するInGaAlAsから成る。
窓層117の上には、サブセルCの層、すなわち、n+型エミッタ層118及びp型基部層119が堆積される。好ましい実施形態では、エミッタ層は、GaInAsから成り、基部層は、GaInAsから構成されて約1.0eVのバンドギャップを有するが、適切な格子定数及びバンドギャップ要件を備えたあらゆる他の半導体材料も同様に使用することができる。
サブセルCの基部層119の上には、好ましくはGaInAsPから成る裏面電界(BSF)層120が堆積される。
BSF層120を覆って又はその上には、好ましくはp+型InGaAsのp+接触層が堆積される。
図3は、本発明による次の処理段階後の図2の太陽電池の断面図であり、金属層122の上に接着層123が堆積されている。この接着剤は、好ましくは「GenTak 330」(「General Chemical Corp.」から販売)である。
図5Aは、本発明による次の処理段階後の図4の太陽電池の断面図であり、基板101、バッファ層103、及びエッチング停止層104を取り除く一連のラッピング及び/又はエッチング段階によって最初の基板が除去されている。エッチング液は、成長基板に依存する。
図6Aは、本発明による太陽電池が実装されているウェーハの上面図である。
図6Bは、図6Aに示す4つの太陽電池を有するウェーハの底面図である。各セルには、格子線501(より詳細には、図10に示されている)、相互接続母線502、及び接触パッド503が存在している。
図7は、次の処理段階後の図6Bのウェーハの底面図であり、リン化物及びヒ化物エッチング液を用いて各セルの周囲の回りにメサ510がエッチングされている。
図9は、本発明による次の処理段階後の図8の太陽電池の断面図であり、エッチング停止層104が、HCl/H2O溶液によって除去されている。
図10は、本発明による次の処理段階後の図9の太陽電池の断面図であり、格子線105の形成の第1段階として、フォトレジストマスク(図示せず)が接触層105の上に置かれる。マスク200が取り離されて格子線501が形成される。
図12は、本発明による次の処理段階後の図11の太陽電池の断面図であり、反射防止(ARC)誘電体コーティング層130が、格子線501を有するウェーハの「底面」側の表面全体の上に付加されている。
1つ又はそれよりも多くの銀電極が、それぞれの接触パッドに溶接される。
図14は、代理基板124及び接着剤123が「EKC 922」によって除去された後の本発明による次の処理段階後の図13の太陽電池の断面図である。表面にわたって穿孔が製造され、各孔径は、0.033インチであり、各々は、0.152インチだけ隔てられている。
穿孔は、代理基板124を通るエッチング液の流れを許し、その持ち上げを可能にする。
図15は、本発明による次の処理段階後の図14の太陽電池の断面図であり、ARC層130の上に接着剤が付加され、カバーガラスがそれに付着されている。
本発明は、多接合太陽電池に具体化されるとして示して説明したが、本発明の精神から何ら逸脱することなく様々な修正及び構造的変更を行うことができるので、示した細部に限定されることは意図していない。
102 核生成層
105 接触層
106 窓層
A、B、C サブセル
Claims (12)
- 上部サブセル、中間サブセル、及び下部サブセルを含む多接合太陽電池を形成する方法であって、
半導体材料のエピタキシャル成長のための第1の基板を準備する段階と、
前記基板上に第1のバンドギャップを有する第1の太陽電池サブセルを形成する段階と、
前記第1のサブセルの上に前記第1のバンドギャップよりも小さい第2のバンドギャップを有する第2の太陽電池サブセルを形成する段階と、
前記第2のサブセルの上に前記第2のバンドギャップよりも大きい第3のバンドギャップを有する漸変中間層を形成する段階と、
前記漸変中間層の上に前記第2のバンドギャップよりも小さい第4のバンドギャップを有する第3の太陽電池サブセルを形成し、そのために該第3のサブセルが前記第2のサブセルに対して格子不整合であるようにする段階と、
を含むことを特徴とする方法。 - 前記第1の基板は、GaAsであることを特徴とする請求項1に記載の太陽電池を形成する方法。
- 前記第1の太陽電池サブセルは、InGa(Al)Pエミッタ領域及びInGa(Al)P基部領域から成ることを特徴とする請求項1に記載の太陽電池を形成する方法。
- 前記第2の太陽電池サブセルは、InGaPエミッタ領域及びIn0.015GaAs基部領域から成ることを特徴とする請求項3に記載の太陽電池を形成する方法。
- 前記漸変中間層は、単調変化する格子定数を有する少なくとも5段階の層のInGaAlAsから成ることを特徴とする請求項1に記載の太陽電池を形成する方法。
- 前記太陽電池の上に代理の第2の基板を取付けて前記第1の基板を取り外す段階を更に含むことを特徴とする請求項1に記載の太陽電池を形成する方法。
- 基板と、
前記基板上の第1のバンドギャップを有する第1の太陽電池サブセルと、
前記第1のサブセルの上に配置され、前記第1のバンドギャップよりも小さい第2のバンドギャップを有する第2の太陽電池サブセルと、
前記第2のサブセルの上に配置され、前記第2のバンドギャップよりも大きい第3のバンドギャップを有する漸変中間層と、
前記中間サブセルに対して格子不整合であり、かつ前記第3のバンドギャップよりも小さい第4のバンドギャップを有する、前記中間層の上に配置された第3の太陽電池サブセルと、
を含むことを特徴とする多接合太陽電池。 - 前記第1の太陽電池サブセルは、InGa(Al)Pから成ることを特徴とする請求項7に記載の多接合太陽電池。
- 前記第2の太陽電池サブセルは、InGaP及びIn0.015GaAsから成ることを特徴とする請求項7に記載の多接合太陽電池。
- 前記漸変中間層は、InGaAlAsから成ることを特徴とする請求項7に記載の多接合太陽電池。
- 前記第3の太陽電池サブセルは、In0.30GaAsから成ることを特徴とする請求項7に記載の多接合太陽電池。
- 前記漸変中間層は、前記バンドギャップが1.50evで一定のままであるようなxを有するInxGa1-xAlAsから成ることを特徴とする請求項7に記載の多接合太陽電池。
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EP1863099A3 (en) | 2012-11-28 |
US10026860B2 (en) | 2018-07-17 |
CN101083290A (zh) | 2007-12-05 |
US8536446B2 (en) | 2013-09-17 |
US20130312818A1 (en) | 2013-11-28 |
US20180248066A1 (en) | 2018-08-30 |
US11677037B2 (en) | 2023-06-13 |
US11211509B2 (en) | 2021-12-28 |
US20210193858A1 (en) | 2021-06-24 |
US20200091364A1 (en) | 2020-03-19 |
US10553740B2 (en) | 2020-02-04 |
US20100229932A1 (en) | 2010-09-16 |
EP1863099A2 (en) | 2007-12-05 |
JP5996161B2 (ja) | 2016-09-21 |
US20070277873A1 (en) | 2007-12-06 |
US8536445B2 (en) | 2013-09-17 |
EP1863099B1 (en) | 2015-02-11 |
JP5106880B2 (ja) | 2012-12-26 |
JP2011071548A (ja) | 2011-04-07 |
CN101083290B (zh) | 2011-09-07 |
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