CN101083290A - 多结太阳能电池中的变形层 - Google Patents

多结太阳能电池中的变形层 Download PDF

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CN101083290A
CN101083290A CNA2006101700158A CN200610170015A CN101083290A CN 101083290 A CN101083290 A CN 101083290A CN A2006101700158 A CNA2006101700158 A CN A2006101700158A CN 200610170015 A CN200610170015 A CN 200610170015A CN 101083290 A CN101083290 A CN 101083290A
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阿瑟·科恩费尔德
马克·A·斯坦
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Suoaier Technology Co Ltd
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Abstract

本发明揭示一种形成一包括一上部子电池、一中间子电池及一下部子电池的多结太阳能电池的方法，其包括：提供用于半导体材料的外延生长的第一衬底；在所述衬底上形成一具有一第一能带隙的第一太阳能子电池；在所述第一子电池上形成一第二太阳能子电池，所述第二太阳能子电池具有一小于所述第一能带隙的第二能带隙；及在所述第二子电池上形成一分级夹层，所述分级夹层具有一大于所述第二能带隙的第三能带隙；形成一第三太阳能子电池，所述第三太阳能子电池具有一小于所述第二能带隙的第四能带隙以使所述第三子电池相对于所述第二子电池晶格失配。

Description

多结太阳能电池中的变形层
政府权利声明
根据DFAR 227-12(1997年1月)的规定，美国政府拥有在全世界为美国或代表美国实施或已实施本发明的特定权利。
技术领域
本发明涉及太阳能电池半导体装置领域，且具体而言涉及包括一包含一变形层的多结太阳能电池的集成半导体结构。
背景技术
光生伏特电池一也称作太阳能电池一为过去几年中所已获得的最重要的新能源之一。人们已对太阳能电池的开发作出了大量努力。因此，太阳能电池当前正用于许多商业及面向消费者的应用中。虽然在此领域中已取得了显著进步，但对太阳能电池满足更复杂应用需要的要求还跟不上需求的步伐。例如在数据通信中所用的卫星等应用已大大增加了对具有经改良的功率及能量转换特性的太阳能电池的需求。
在卫星及其他与空间相关的应用中，卫星功率系统的大小、质量及成本依赖于所使用太阳能电池的功率及能量转换效率。换句话说，有效负载的大小及机载服务的可用性与所提供的功率量成正比。因此，随着有效负载变得越来越复杂，太阳能电池一其充当机载功率系统的功率转换装置一变得越来越重要。
太阳能电池常常制作成竖直的多结结构形式，并设置于水平阵列中，其中将各个单独的太阳能电池串联连接在一起。阵列的形状及结构以及其包含的电池数量部分地取决于所需的输出电压及电流。
在例如第6,951,819号美国专利及M.W.Wanless等人所著的“用于高性能、III-V光生伏特能量转换器的晶格失配方法(Lattice Mismatched Approaches for HighPerformance，III-V Photovoltaic Energy Converters)”(2005年1月3-7日举行的第31届IEEE光生伏特专家会议的会刊，IEEE出版社，2005年)中所述的反相变形太阳能电池结构为未来商业产品的开发提供了一重要的起点。在该现有技术中阐述的结构提出了与恰当选择材料及制作步骤、尤其是与“下部”子电池(具有最低能带隙的子电池)与毗邻子电池之间的晶格失配层相关联的诸多实际困难。
在本发明之前，在现有技术中所揭示的材料及制作步骤尚不足以制成一种在商业上可行、可制造且能量高效的太阳能电池。
发明内容
1、本发明的目的
本发明的一目的是提供一种经改良的多结太阳能电池。
本发明的一目的是提供一种经改良的反相变形太阳能电池。
本发明的另一目的是在一多电池结构中在一第二子电池与一第三晶格失配子电池之间提供一使太阳能电池的能量效率最大化的夹层。
本发明的再一目的是提供一种将一反相变形太阳能电池制造为一薄的挠性膜的方法。
通过阅读包括下文具体实施方式在内的本发明揭示内容及实践本发明，所属领域的技术人员将易知本发明的其他目的、优点和新颖特征。虽然下文将参照较佳实施例来说明本发明，但应了解，本发明并不仅限于这些较佳实施例。所属领域的技术人员通过阅读本文中的教示内容将会得知本发明在其他领域中的其他应用、修改形式及实施例，而这些应用、修改形式和实施例均属于本文所揭示并要求权利的发明范围内且本发明对于这些应用、修改形式和实施例可具有实用性。
2、本发明的特征
简要地说且大体而言，本发明提供一种太阳能电池，其包括：一具有一上表面的半导体本体；一设置于所述上表面上的多结太阳能电池；一位于衬底上的第一太阳能子电池，其具有一第一能带隙；一第二太阳能子电池，其设置于所述第一子电池上并具有一小于所述第一能带隙的第二能带隙；及一设置于所述第二子电池上的分级夹层，所述夹层具有一大于所述第二能带隙的第三能带隙，及一第三太阳能子电池，所述第三太阳能子电池位于所述第二太阳能子电池上以使所述第三太阳能子电池相对于所述第二子电池晶格失配且所述第三子电池具有一小于所述第三能带隙的第四能带隙。
在另一方面中，本发明提供一种通过如下方式形成一包括一上部子电池、一中间子电池及一下部子电池的多结太阳能电池的方法：提供一用于半导体材料的外延生长的第一衬底；在所述衬底上形成一具有一第一能带隙的第一太阳能子电池；在所述第一子电池上形成一第二太阳能子电池，所述第二太阳能子电池具有一小于所述第一能带隙的第二能带隙；及在所述第二子电池上形成一分级夹层，所述分级夹层具有一大于所述第二能带隙的第三能带隙；在所述中间子电池上形成所述至少一个下部子电池，以使所述至少一个下部子电池相对于所述中间子电池晶格失配且所述第三子电池具有一小于所述第二能带隙的第四能带隙。
附图说明
结合附图参阅下文具体实施方式部分可更好及更全面地了解本发明的这些及其他特征及优点，在图式中：
图1为本发明的太阳能电池在用于形成所述太阳能电池中各个层的工艺步骤结束时的放大剖面图；
图2为图1所示太阳能电池在根据本发明的下一工艺步骤之后的剖面图；
图3为图2所示太阳能电池在根据本发明的下一工艺步骤之后的剖面图；
图4为图3所示太阳能电池在根据本发明的下一工艺步骤之后的剖面图，其中附装有一替代衬底；
图5A为图4所示太阳能电池在根据本发明的下一工艺步骤之后的剖面图，其中原始衬底被移除；
图5B为图4所示太阳能电池在根据本发明的下一工艺步骤之后的另一剖面图，其中原始衬底被移除；
图6A为一在其中制作根据本发明的太阳能电池的晶圆片的俯视平面图；
图6B为一在其中制作根据本发明的太阳能电池的晶圆片的仰视平面图；
图7为图6B所示晶圆片在根据本发明的下一工艺步骤之后的俯视平面图；
图8为图5B所示太阳能电池在根据本发明的下一工艺步骤之后的剖面图；
图9为图8所示太阳能电池在根据本发明的下一工艺步骤之后的剖面图；
图10为图9所示太阳能电池在根据本发明的下一工艺步骤之后的剖面图；
图11为图10所示太阳能电池在根据本发明的下一工艺步骤之后的剖面图；
图12为图11所示太阳能电池在根据本发明的下一工艺步骤之后的剖面图；
图13为图12所示太阳能电池在根据本发明的下一工艺步骤之后的剖面图；
图14为图13所示太阳能电池在根据本发明的下一工艺步骤之后的剖面图；
图15为图14所示太阳能电池在根据本发明的下一工艺步骤之后的剖面图。
具体实施方式
现在将阐述本发明的细节，包括其实例性方面和实施例。参见附图和下文说明，相同的参考编号用于指代相同或功能上相似的元件，且旨在以高度简化的图示方式图解说明实例性实施例的主要特征。此外，这些图式既非旨在描绘实际实施例的每一特征也并非旨在描绘所示元件的相对尺寸，且这些图式并非按比例绘制。
图1绘示在一衬底上形成这三个子电池A、B及C之后的根据本发明的多结太阳能电池。更具体而言，图中显示一衬底101，其可为砷化镓(GaAs)、锗(Ge)、或其他适宜的材料。在为一Ge衬底的情况下，在所述衬底上沉积一成核层102。在所述衬底上，或者在成核层102上，进一步沉积一缓冲层103及一蚀刻终止层104。然后在层104上沉积一接触层105，并在所述接触层上沉积一窗口层106。然后，在窗口层106上沉积一由一n+射极层107及一p型基极层108组成的子电池A。
应注意，多结太阳能电池结构可由周期表中所列的III族至V族元素的服从晶格常数及能带隙要求的任一适当组合形成，其中III族包括硼(B)、铝(Al)、镓(Ga)、铟(In)、及铊(T)。IV族包括碳(C)、硅(Si)、锗(Ge)、及锡(Sn)。V族包括氮(N)、磷(P)、砷(As)、锑(Sb)、及铋(Bi)。
在该较佳实施例中，衬底101为砷化镓，射极层107由InGa(Al)P构成，且基极层由InGa(Al)P构成。
在基极层108的顶部上沉积一用于降低复合损失的背面场(“BSF”)层109。
BSF层109自基极/BSF界面附近的区域驱动少数载流子，以使复合损失效应最小化。换句话说，BSF层109会减少太阳能子电池A背侧处的复合损失且由此减少基极中的复合。
在BSF层109的顶部上沉积一系列重掺杂的p型及n型层110，所述p型及n型层110形成一作为一将电池A连接至电池B的电路元件的隧道二极管。
在隧道二极管层110的顶部上沉积一窗口层111。在子电池B中所用的窗口层111也用于减少复合损失。窗口层111还改善下伏结的电池表面的钝化。所属领域的技术人员应了解，可在所述电池结构中添加或删除附加层，此并不背离本发明的范围。
在窗口层111的顶部上沉积电池B的各个层：射极层112及p型基极层113。这些层较佳分别由InGaP及In0.015GaAs构成，尽管也可使用任何其他符合晶格常数及能带隙要求的适宜材料。
在电池B的顶部上沉积一BSF层114，BSF层114执行与BSF层109相同的功能。在BSF层114上沉积一类似于层110的p++/n++隧道二极管115，隧道二极管115同样形成一将电池B连接至电池C的电路元件。在隧道二极管115上沉积一达到约1.0微米厚度的较佳为InGaAs的缓冲层115a。在缓冲层115a上沉积一变形缓冲层116，其较佳为一系列在成分上步阶分级的InGaAlAs层，所述一系列在成分上步阶分级的InGaAlAs层具有单调变化的晶格常数以实现晶格常数从电池B向子电池C的跃迁。层116的能带隙为1.5ev，其恒定地具有一略大于中间电池B的能带隙的值。
在一实施例中，如在Wanless等人的论文中所建议，所述步阶分级变包含九个成分上分级的步阶，其中每一步阶层均具有0.25微米的厚度。在该较佳实施例中，所述夹层由InGaALAs构成，具有单调变化的晶格常数。
在变形缓冲层116顶部上沉积另一n+窗口层117。窗口层117还改善下伏结的电池表面的钝化。也可提供其他层，此并不背离本发明的范围。
在窗口层117的顶部上沉积子电池C的各个层：n+型射极层118及p型基极层119。在该较佳实施例中，所述射极层由GaInAs构成且所述基极层由能带隙约为1.0ev的GaInAs构成，尽管也可使用任何其他具有适宜的晶格常数及能带隙要求的半导体材料。
在子电池C的基极层119的顶部上沉积一较佳由GaInAsP构成的背面场(BSF)层120。
在BSF层120上或顶部上沉积一较佳由p+型InGaAs形成的p+接触层。
图2为图1所示太阳能电池在根据本发明的下一工艺步骤之后的剖面图，其中在p+半导体接触层121上沉积一金属接触层122。所述金属较佳为一系列Ti/Au/Ag/Au层。
图3为图2所示太阳能电池在根据本发明的下一工艺步骤之后的剖面图，其中在金属层122上沉积一粘合剂层123。所述粘合剂较佳为GenTak 330(由General Chemical公司配送)。
图4为图3所示太阳能电池在根据本发明的下一工艺步骤之后的剖面图，其中附装一较佳为蓝宝石的替代衬底。在该较佳实施例中，所述替代衬底约为40密耳厚，且穿制有直径约为1mm、间隔4mm的孔以有助于所述衬底的后续移除。
图5A为图4所示太阳能电池在根据本发明的下一工艺步骤之后的剖面图，其中通过一系列其中移除衬底101、缓冲层103及蚀刻终止层104的研磨及/或蚀刻步骤来移除原始衬底。蚀刻剂为视生长衬底而定。
图5B为从替代衬底124处于图式底部的取向看到的来自图5A所示太阳能电池的图5A所示太阳能电池的剖面图。
图6A为一在其中构建根据本发明的太阳能电池的晶圆片的俯视平面图。
图6B为图6A中所示具有四个太阳能电池的晶圆片的仰视平面图。在每一电池中，均存在若干栅格线501(更具体地显示于图10中)、一互连总线502、及一接触焊垫503。
图7为图6B所示晶圆在其中使用磷化物及砷化物蚀刻剂在每一电池周边周围蚀刻一台面510的下一工艺步骤之后的仰视平面图。
图8为图5B所示太阳能电池在根据本发明的下一工艺步骤之后的剖面图，其中已使用4柠檬酸1 H2O2溶液移除了牺牲缓冲层。
图9为图8所示太阳能电池在根据本发明的下一工艺步骤之后的剖面图，其中使用HCI/H2O溶液移除了蚀刻终止层104。
图10为图9所示太阳能电池在根据本发明的下一工艺步骤之后的剖面图，其中在接触层105上放置一光阻剂遮罩(未显示)作为形成栅格线501的第一步骤。提除遮罩200以形成栅格线501。
图11为在根据本发明的下一工艺步骤后的图10所示太阳能电池的剖面图，在所述步骤中通过蒸发来沉积栅格线501并以光刻方式将其图案化及沉积于接触层105上。所述栅格线用作一遮罩，以使用一柠檬酸/过氧化物蚀刻混合物将所述表面向下蚀刻至窗口层106。
图12为图11所示太阳能电池在根据本发明的下一工艺步骤之后的剖面图，其中在晶圆片的带有栅格线501的“底”侧的整个表面上涂覆一减反射性(ARC)介电涂层130。
图13为图12所示太阳能电池在根据本发明的下一工艺步骤之后的剖面图，其中使用磷化物及砷化物蚀刻剂将台面501向下蚀刻至金属层122。该图中的剖面是绘示成从图7中所示的A-A平面所见。
将一个或多个银电极焊接至各个相应的接触焊垫上。
图14为在通过EKC 922移除替代衬底124及粘合剂123之后，图13所示太阳能电池在根据本发明的下一工艺步骤之后的剖面图。在所述表面上制作穿孔，其中每一穿孔均具有0.033英寸的直径且相隔0.152英寸。
所述穿孔使蚀刻剂能够穿过替代衬底124流动以允许提除替代衬底124。
图15为图14所示太阳能电池在根据本发明的下一工艺步骤之后的剖面图，其中在ARC层130上涂覆一粘合剂且将在其上面附装一防护玻璃。
应了解，上述元件的每一者、或两个或更多个元件一起，也可有用地应用于不同于上述类型的不同于所述构造类型的其他类型的构造中。
虽然上文已将本发明显示及描述成实施为一多结太阳能电池形式，但本发明并非旨在限定于所示细节，因为也可作出各种修改和结构改变，此决不会背离本发明的精神。
无需进一步分析，上文将全面披露本发明的要旨，以使其他人可应用现有知识在不忽略根据现有技术观点合理构成本发明的一般或具体方面的基本特性的特征的前提下容易地将本发明修改成适用于各种应用，且因此，这些修改应该且打算包含在随附权利要求书的等效意义及范围内。

Claims (18)

1、一种形成一包括一上部子电池、一中间子电池、及一下部子电池的多结太阳能电池的方法，其包括：
提供用于半导体材料的外延生长的第一衬底；
在所述衬底上形成一具有一第一能带隙的第一太阳能子电池；
在所述第一子电池上形成一第二太阳能子电池，所述第二太阳能子电池具有一小于所述第一能带隙的第二能带隙；及
在所述第二子电池上形成一分级夹层，所述夹层具有一大于所述第二能带隙的第三能带隙；及
在所述分级夹层上形成一第三太阳能子电池，所述第三太阳能子电池具有一小于所述第二能带隙的第四能带隙以使所述第三子电池相对于所述第二子电池晶格失配。
2、如权利要求1所述的形成一太阳能电池的方法，其中所述第一衬底为GaAs。
3、如权利要求1所述的形成一太阳能电池的方法，其中所述第一太阳能子电池由一InGa(Al)P射极区及一InGa(Al)P基极区构成。
4、如权利要求3所述的形成一太阳能电池的方法，其中所述第二太阳能子电池由一InGaP射极区及一In0.015GaAs基极区构成。
5、如权利要求1所述的形成一太阳能电池的方法，其中所述分级夹层由InGaAlAs构成。
6、如权利要求5所述的形成一太阳能电池的方法，其中所述分级夹层由具有单调变化的晶格常数的九个层步阶构成。
7、如权利要求1所述的形成一太阳能电池的方法，其进一步包括在所述第三太阳能子电池上沉积一接触层并与其形成电接触。
8、如权利要求7所述的形成一太阳能电池的方法，其进一步包括在所述接触层上附装一替代的第二衬底并移除所述第一衬底。
9、如权利要求1所述的形成一太阳能电池的方法，其进一步包括将所述接触层图案化成一栅格；及
围绕所述太阳能电池的周边蚀刻一槽，以便在所述替代的第二衬底上形成一台面结构。
10、一种多结太阳能电池，其包括：
一衬底；
一位于所述衬底上的第一太阳能子电池，其具有一第一能带隙；
一第二太阳能子电池，其设置于所述第一子电池上并具有一小于所述第一能带隙的第二能带隙；
一分级夹层，其设置于所述第二子电池上并具有一大于所述第二能带隙的第三能带隙；及
一设置于所述夹层上的第三太阳能子电池，其相对于所述中间子电池不晶格失配并具有一小于所述第三能带隙的第四能带隙。
11、如权利要求10所述的多结太阳能电池，其中所述衬底选自由锗或GaAs组成的群组。
12、如权利要求10所述的多结太阳能电池，其中所述第一太阳能子电池由InGa(Al)P构成。
13、如权利要求10所述的多结太阳能电池，其中所述第二太阳能子电池由InGaP及In0.015GaAs构成。
14、如权利要求10所述的多结太阳能电池，其中所述分级夹层由InGaAlAs构成。
15、如权利要求10所述的多结太阳能电池，其中所述第三太阳能子电池由In0.30GaAs构成。
16、如权利要求10所述的多结太阳能电池，其中所述分级夹层由带有x的InxGa1-xAlAs构成以使所述能带隙保持恒定于1.50ev。
17、如权利要求14所述的多结太阳能电池，其进一步包括一设置于所述分级夹层上的In0.78GaP窗口层。
18、如权利要求16所述的多结太阳能电池，其中所述分级夹层包括至少五个步阶层。
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US20200091364A1 (en) 2020-03-19
EP1863099A3 (en) 2012-11-28

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