KR20120099441A - 나노와이어 터널 다이오드 및 이의 제조 방법 - Google Patents

나노와이어 터널 다이오드 및 이의 제조 방법 Download PDF

Info

Publication number
KR20120099441A
KR20120099441A KR1020127013173A KR20127013173A KR20120099441A KR 20120099441 A KR20120099441 A KR 20120099441A KR 1020127013173 A KR1020127013173 A KR 1020127013173A KR 20127013173 A KR20127013173 A KR 20127013173A KR 20120099441 A KR20120099441 A KR 20120099441A
Authority
KR
South Korea
Prior art keywords
doped
tunnel diode
junction
semiconductor
heterojunction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020127013173A
Other languages
English (en)
Korean (ko)
Inventor
매그너스 보그스트룀
매그너스 휴린
스테판 팰트
Original Assignee
솔 발테익스 에이비
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 솔 발테익스 에이비 filed Critical 솔 발테익스 에이비
Publication of KR20120099441A publication Critical patent/KR20120099441A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/70—Tunnel-effect diodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/122—Nanowire, nanosheet or nanotube semiconductor bodies oriented at angles to substrates, e.g. perpendicular to substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/123—Nanowire, nanosheet or nanotube semiconductor bodies comprising junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/70—Tunnel-effect diodes
    • H10D8/75—Tunnel-effect PN diodes, e.g. Esaki diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H10F10/172—Photovoltaic cells having only PIN junction potential barriers comprising multiple PIN junctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H10F71/1276—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising growth substrates not made of Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/143—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
    • H10F77/1437—Quantum wires or nanorods
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Bipolar Transistors (AREA)
KR1020127013173A 2009-10-22 2010-10-22 나노와이어 터널 다이오드 및 이의 제조 방법 Ceased KR20120099441A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE0950781 2009-10-22
SE0950781-5 2009-10-22

Publications (1)

Publication Number Publication Date
KR20120099441A true KR20120099441A (ko) 2012-09-10

Family

ID=43900554

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127013173A Ceased KR20120099441A (ko) 2009-10-22 2010-10-22 나노와이어 터널 다이오드 및 이의 제조 방법

Country Status (6)

Country Link
US (1) US20120199187A1 (enExample)
EP (1) EP2491595A4 (enExample)
JP (1) JP2013508966A (enExample)
KR (1) KR20120099441A (enExample)
CN (1) CN102656700A (enExample)
WO (1) WO2011049529A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120006390A1 (en) * 2009-12-08 2012-01-12 Yijie Huo Nano-wire solar cell or detector
KR20150036229A (ko) 2012-07-06 2015-04-07 큐나노 에이비 방사상 나노와이어 에사키 다이오드 장치 및 방법
US8785909B2 (en) 2012-09-27 2014-07-22 Intel Corporation Non-planar semiconductor device having channel region with low band-gap cladding layer
US8937294B2 (en) * 2013-03-15 2015-01-20 Rohm And Haas Electronic Materials Llc Multi-heterojunction nanoparticles, methods of manufacture thereof and articles comprising the same
GB2517186A (en) * 2013-08-14 2015-02-18 Norwegian University Of Science And Technology Radial P-N junction nanowire solar cells
KR102149331B1 (ko) 2013-08-30 2020-08-28 삼성전자주식회사 와이어 구조체와 이를 구비하는 반도체 소자 및 와이어 구조체의 제조방법
US20150187889A1 (en) * 2013-12-27 2015-07-02 University Of Rochester Surface-controlled semiconductor nano-devices, methods and applications
JP6874572B2 (ja) * 2017-07-07 2021-05-19 富士通株式会社 電子デバイス、及び電子デバイスの製造方法
JP6954184B2 (ja) * 2018-03-01 2021-10-27 富士通株式会社 半導体デバイス、受信機及び半導体デバイスの製造方法
JP7103027B2 (ja) * 2018-07-30 2022-07-20 富士通株式会社 化合物半導体装置、化合物半導体装置の製造方法、発電装置及び電源装置
JP7211201B2 (ja) * 2019-03-27 2023-01-24 富士通株式会社 化合物半導体装置及びその製造方法、検波器
JP7265138B2 (ja) * 2019-04-26 2023-04-26 富士通株式会社 半導体デバイス、コンピュータ、及び半導体デバイスの製造方法
CN111162141A (zh) * 2019-12-20 2020-05-15 燕山大学 一种多结纳米线太阳能电池的制备方法
CN115428166A (zh) * 2020-04-15 2022-12-02 富士通株式会社 半导体装置、储层计算系统以及半导体装置的制造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4198644A (en) * 1978-06-09 1980-04-15 The United States Of America As Represented By The Secretary Of The Army Tunnel diode
US4667059A (en) * 1985-10-22 1987-05-19 The United States Of America As Represented By The United States Department Of Energy Current and lattice matched tandem solar cell
US6660928B1 (en) * 2002-04-02 2003-12-09 Essential Research, Inc. Multi-junction photovoltaic cell
US7335908B2 (en) 2002-07-08 2008-02-26 Qunano Ab Nanostructures and methods for manufacturing the same
US7432522B2 (en) * 2003-04-04 2008-10-07 Qunano Ab Nanowhiskers with pn junctions, doped nanowhiskers, and methods for preparing them
JP2007502031A (ja) * 2003-06-12 2007-02-01 シリカ・コーポレーション 自由キャリアの定常状態不平衡分布及びそれを使用する光子エネルギー・アップコンバート
WO2007102781A1 (en) 2006-03-08 2007-09-13 Qunano Ab Method for metal-free synthesis of epitaxial semiconductor nanowires on si
US7893476B2 (en) * 2006-09-15 2011-02-22 Imec Tunnel effect transistors based on silicon nanowires
US8003883B2 (en) * 2007-01-11 2011-08-23 General Electric Company Nanowall solar cells and optoelectronic devices
US8183566B2 (en) * 2007-03-01 2012-05-22 Hewlett-Packard Development Company, L.P. Hetero-crystalline semiconductor device and method of making same
US20100095998A1 (en) * 2007-04-09 2010-04-22 The Regents Of The University Of California Low resistance tunnel junctions for high efficiency tanden solar cells
CN101803035B (zh) * 2007-06-19 2016-08-24 昆南诺股份有限公司 基于纳米线的太阳能电池结构
US7960715B2 (en) * 2008-04-24 2011-06-14 University Of Iowa Research Foundation Semiconductor heterostructure nanowire devices
US8242353B2 (en) * 2009-03-16 2012-08-14 International Business Machines Corporation Nanowire multijunction solar cell

Also Published As

Publication number Publication date
WO2011049529A1 (en) 2011-04-28
EP2491595A4 (en) 2014-03-19
US20120199187A1 (en) 2012-08-09
CN102656700A (zh) 2012-09-05
EP2491595A1 (en) 2012-08-29
JP2013508966A (ja) 2013-03-07

Similar Documents

Publication Publication Date Title
US20120199187A1 (en) Nanowire tunnel diode and method for making the same
US9096429B2 (en) Nanoelectronic structure and method of producing such
Tomioka et al. Selective-area growth of III-V nanowires and their applications
US8878243B2 (en) Lattice-mismatched semiconductor structures and related methods for device fabrication
CN102144298B (zh) 纳米结构的光电二极管
CN112020762B (zh) 增强型薄膜器件
EP2870632B1 (en) Radial nanowire esaki diode devices and corresponding methods
WO2008079077A2 (en) Nanoelectronic structure and method of producing such
CN101622691B (zh) 异质晶体半导体器件及其制作方法
US6822274B2 (en) Heterojunction semiconductor device having an intermediate layer for providing an improved junction
US9324900B2 (en) Method of fabricating a superlattice structure
US9276159B2 (en) Superlattice structure
Rommel et al. Record PVCR GaAs-based tunnel diodes fabricated on Si substrates using aspect ratio trapping
US20210167239A1 (en) Light-Receiving Element
Kawaguchi et al. Type-II p-GaAsSb/n-InAs Nanowires under Conditions for Tunnel Junction Formation
KR100808202B1 (ko) 공명 터널링 다이오드 및 그 제조방법
Kawaguchi et al. Improvement in Uniformity of Type-II p-GaAsSb/n-InAs Nanowires on GaAs Substrates by the Insertion of GaAs Segments in Position-controlled VLS Method
Jolley et al. Growth and confinement effects in III–V semiconductor nanostructures
Niu et al. GaAs/GaAs0. 89Sb0. 11 double heterojunction bipolar transistors (DHBTs) grown by SSMBE with a GaAs decomposition source
Fortuna Growth and application of planar III-V semiconductor nanowires grown with MOCVD
US20150187889A1 (en) Surface-controlled semiconductor nano-devices, methods and applications

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20120522

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20151022

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20161109

Patent event code: PE09021S01D

E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20170420

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20161109

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I