JP2013508966A - ナノワイヤトンネルダイオードおよびその製造方法 - Google Patents
ナノワイヤトンネルダイオードおよびその製造方法 Download PDFInfo
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- 239000002070 nanowire Substances 0.000 title claims abstract description 66
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 239000004065 semiconductor Substances 0.000 claims abstract description 74
- 239000000463 material Substances 0.000 claims abstract description 53
- 150000001875 compounds Chemical class 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims description 23
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 17
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 17
- 229910005542 GaSb Inorganic materials 0.000 claims description 12
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000011258 core-shell material Substances 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052785 arsenic Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- 238000001228 spectrum Methods 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 22
- 239000000203 mixture Substances 0.000 description 9
- 230000006870 function Effects 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 239000002243 precursor Substances 0.000 description 7
- 230000005641 tunneling Effects 0.000 description 7
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- 230000008901 benefit Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000013459 approach Methods 0.000 description 3
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 3
- 229910000070 arsenic hydride Inorganic materials 0.000 description 3
- 238000010420 art technique Methods 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- -1 InN Chemical compound 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 101100208382 Danio rerio tmsb gene Proteins 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
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- 230000005540 biological transmission Effects 0.000 description 1
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- 239000003054 catalyst Substances 0.000 description 1
- 238000004871 chemical beam epitaxy Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000002073 nanorod Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
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- 238000012545 processing Methods 0.000 description 1
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- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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Abstract
【選択図】図11
Description
半導体基板3を用意するステップと、
半導体基板3上にナノワイヤ1を成長させるステップとを含み、pドープ半導体領域4およびnドープ半導体領域5を少なくとも部分的にナノワイヤ1の中に含むpn接合6が形成される。
1.前駆体分子TMIn、PH3およびTESnを成長反応器に供給した。TMInおよびPH3がInPの前駆体である一方で、SnがTESn前駆体から取り込まれ、その結果InPがnドーピングされることになる。少量のHCl流をガス混合物に加えて、ナノワイヤの側壁上の成長をすべて除去した。このHCI流は、ワイヤの成長中ずっと維持した。
2.TESn流を止め、意図的なドーピングがない短い領域を成長させた。
3.DEZn流を成長反応器内のガス混合物に加えて、外因性pドープ領域を得た。
4.DEZn流を増やしてZnの取込みを増加させ、それによって、ドーピングレベルがかなり高くなった部分を得た。これは、トンネルダイオードの第1の部分である。DEZn流は、ナノワイヤのエピタキシャル成長の低下がわずかにしかならないように選択した。すなわち、DEZn流は、InPの表面ピンニングにもかかわらず、縮退ドーピングに至るのに十分であった。これは、p型ドーピングよりはむしろn型ドーピングで有益である。
5.トンネルダイオードの第2の層では、DEZn流を完全に止め、代わりに大量のTESn流を直ちに出した。SnをInPナノワイヤ中に非常に高いレベルまで取り込むことが、エピタキシャル成長を低下させることなくできるので、ドーピング分子のバッファとして作用するAuシード粒子にもかかわらず、ドーピングの急峻な変化を実現することが可能であった。InPの表面ピンニングおよび高Sn流により、n型縮退ドーピングを実施するのに、利用可能なSnのほんのわずかしかナノワイヤに取り込む必要がなく、それによって、Auのバッファ効果の遅れが回避される。
6.TESn流を低減し、低いドーピング濃度でnドープされたInPの部分をワイヤに付加した。
7.TESn流を止め、意図的なドーピングがない短い領域を成長させた。
8.DEZn流を成長反応器内のガス混合物に加えて、外因性pドープ領域を得た。
1.TMIn、PH3およびTESnを成長反応器に供給することによってワイヤの成長を開始するステップ。TMInおよびPH3がInPの前駆体であるのに対し、SnがTESn前駆体から取り込まれ、その結果InPが縮退nドーピングされることになる。成長温度は420℃であった。
2.TMIn、PH3およびTESn流を止め、代わりにTMGa、AsH3およびDEZn流を付加するステップ。これにより、縮退pドープGaAsの部分が得られた。比較的低い成長温度とAsH3、DEZnおよびTMGaの間の比率との組合せにより、GaAsの側壁成長は微々たるものになった。さらに、DEZn流は、エピタキシャル成長を維持しながら可能な限り多くなるように選択した。これは、n型よりもp型ドープする方が容易なGaAsと相まって、ドーピング型の非常に急峻な変化をもたらした。ナノワイヤ成長時に、Pをベースとする材料からAsをベースとする材料への切替わりは極めて急峻になりうる。また、Gaの取込みは、InほどにはAuシード粒子によって遅くならない。これらの効果により、トンネルダイオードの2つの部分間で組成が急峻に変化することになる。
Claims (17)
- pn接合(6)を形成するpドープ半導体領域(4)およびnドープ半導体領域(5)を含むトンネルダイオードであって、前記pn接合(6)の少なくとも一部がナノワイヤ(1)中に形成されることを特徴とする、トンネルダイオード。
- 前記ナノワイヤ(1)が、好ましくはIII−V半導体材料である1つまたは複数の化合物半導体材料でできている、請求項1に記載のトンネルダイオード。
- 前記ナノワイヤ(1)が、好ましくはシリコン基板である半導体基板(3)から突き出る、請求項1または2に記載のトンネルダイオード。
- 前記pドープ半導体領域(4)が縮退ドープp++部分(4’)を含み、前記nドープ半導体領域(5)が縮退ドープn++部分(5’)を含み、前記縮退ドープ部分(4’、5’)の一方が、前記縮退ドープ部分(4’、5’)のもう一方の上にエピタキシャル成長される、請求項1〜3のいずれか一項に記載のトンネルダイオード。
- 前記縮退ドープ部分(4’、5’)がコアシェル構造で成長される、請求項4に記載のトンネルダイオード。
- 前記縮退ドープ部分(4’、5’)が軸構造で成長される、請求項4に記載のトンネルダイオード。
- 前記半導体材料が、前記pn接合(6)の両側で同じであり、それによってホモ接合が形成される、請求項2〜6のいずれか一項に記載のトンネルダイオード。
- 前記pn接合(6)の別々の側で前記半導体材料が異なり、それによってヘテロ接合が形成される、請求項2〜6のいずれか一項に記載のトンネルダイオード。
- 前記pドープ半導体領域(4)および前記nドープ半導体領域(5)が、Ga、P、In、Asの群から選択された半導体材料で形成される化合物半導体材料を含み、それによってタイプI(ストラドリングギャップ)ヘテロ接合トンネルダイオード、またはタイプII(スタガギャップ)ヘテロ接合トンネルダイオードが形成される、請求項8に記載のトンネルダイオード。
- 前記pドープ半導体領域(4)および前記nドープ半導体領域(5)が、Ga、P、In、As、Sbの群から選択された半導体材料で形成される化合物半導体材料を含み、前記領域の少なくとも1つがSbをベースとする化合物半導体を含み、それによってタイプI(ストラドリングギャップ)ヘテロ接合トンネルダイオード、またはタイプII(スタガギャップ)ヘテロ接合トンネルダイオード、またはタイプIII(ブロークンギャップ)ヘテロ接合トンネルダイオードが形成される、請求項8に記載のトンネルダイオード。
- 少なくとも1つの化合物半導体材料がAlを含む、請求項9または10に記載のトンネルダイオード。
- 前記pドープ半導体領域(4)が前記pn接合(6)の一方の側にGaSbを含み、前記nドープ半導体領域(5)が前記pn接合(6)のもう一方の側にInAsを含む、請求項10に記載のトンネルダイオード。
- 前記pドープ半導体領域(4)が前記pn接合(6)の一方の側にInSbを含み、前記nドープ半導体領域(5)が前記pn接合(6)のもう一方の側にInAsを含む、請求項10に記載のトンネルダイオード。
- 前記ヘテロ接合が、前記ヘテロ接合の部分(4’、5’)の一方とエピタキシャル接触している機能部分によって歪み補償される、請求項8に記載のトンネルダイオード。
- 光吸収部分を構成する少なくとも1つのナノワイヤを含む多接合太陽電池であって、前記ナノワイヤが、前記請求項のいずれかに記載のトンネルダイオードによって分離された第1の半導体部分および第2の半導体部分を少なくとも含み、前記第1および前記第2の半導体部分がそれぞれ、太陽スペクトルの所定の第1および第2の波長領域で光を吸収するように適合される、多接合太陽電池。
- 化合物半導体材料のトンネルダイオードを製造する方法であって、
半導体基板(3)を用意するステップと、
前記半導体基板(3)上にナノワイヤ(1)を成長させるステップとを含み、pドープ半導体領域(4)およびnドープ半導体領域(5)を少なくとも部分的に前記ナノワイヤ(1)の中に含むpn接合(6)が形成される、方法。 - 成長させる前記ステップが、少なくとも前記pドープ領域(4)のp++部分(4’)およびnドープ領域(5)のn++部分(5’)を縮退ドーピングするステップを含む、請求項16に記載の方法。
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