JP2013543278A5 - - Google Patents

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Publication number
JP2013543278A5
JP2013543278A5 JP2013539840A JP2013539840A JP2013543278A5 JP 2013543278 A5 JP2013543278 A5 JP 2013543278A5 JP 2013539840 A JP2013539840 A JP 2013539840A JP 2013539840 A JP2013539840 A JP 2013539840A JP 2013543278 A5 JP2013543278 A5 JP 2013543278A5
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JP
Japan
Prior art keywords
doped
tunnel layer
layer
tunnel
doped tunnel
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Pending
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JP2013539840A
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English (en)
Japanese (ja)
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JP2013543278A (ja
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Publication date
Priority claimed from US12/950,912 external-priority patent/US11417788B2/en
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Publication of JP2013543278A publication Critical patent/JP2013543278A/ja
Publication of JP2013543278A5 publication Critical patent/JP2013543278A5/ja
Pending legal-status Critical Current

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JP2013539840A 2010-11-19 2011-09-23 多接合型太陽電池に関してＩｎＰ格子定数を有する広バンドギャップのタイプＩＩトンネル接合 Pending JP2013543278A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/950,912 2010-11-19
US12/950,912 US11417788B2 (en) 2010-11-19 2010-11-19 Type-II high bandgap tunnel junctions of InP lattice constant for multijunction solar cells
PCT/US2011/052898 WO2012067715A2 (en) 2010-11-19 2011-09-23 TYPE-II HIGH BANDGAP TUNNEL JUNCTIONS OF InP LATTICE CONSTANT FOR MULTIJUNCTION SOLAR CELLS

Publications (2)

Publication Number Publication Date
JP2013543278A JP2013543278A (ja) 2013-11-28
JP2013543278A5 true JP2013543278A5 (enExample) 2014-11-13

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013539840A Pending JP2013543278A (ja) 2010-11-19 2011-09-23 多接合型太陽電池に関してＩｎＰ格子定数を有する広バンドギャップのタイプＩＩトンネル接合

Country Status (7)

Country Link
US (1) US11417788B2 (enExample)
EP (1) EP2641275B1 (enExample)
JP (1) JP2013543278A (enExample)
KR (1) KR101908742B1 (enExample)
CN (2) CN107863400A (enExample)
CA (1) CA2810895C (enExample)
WO (1) WO2012067715A2 (enExample)

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US10283658B2 (en) * 2011-02-09 2019-05-07 The Board Of Regents Of The University Of Oklahoma Interband cascade devices
CN102751367A (zh) * 2012-07-10 2012-10-24 厦门市三安光电科技有限公司 三结太阳能电池及其制备方法
GB2504977B (en) 2012-08-16 2017-10-04 Airbus Defence & Space Gmbh Laser power converter
CN102832274B (zh) * 2012-09-05 2015-01-07 天津三安光电有限公司 倒装太阳能电池及其制备方法
JP6446782B2 (ja) * 2013-03-14 2019-01-09 株式会社リコー 化合物半導体太陽電池、及び、化合物半導体太陽電池の製造方法
WO2014142340A1 (en) * 2013-03-14 2014-09-18 Ricoh Company, Ltd. Compound semiconductor photovoltaic cell and manufacturing method of the same
JP2015038952A (ja) * 2013-07-16 2015-02-26 株式会社リコー 化合物半導体太陽電池、及び、化合物半導体太陽電池の製造方法
JP6550691B2 (ja) 2013-07-30 2019-07-31 株式会社リコー 化合物半導体太陽電池
JP6582591B2 (ja) * 2014-07-11 2019-10-02 株式会社リコー 化合物半導体太陽電池、及び、化合物半導体太陽電池の製造方法
JP2016122752A (ja) * 2014-12-25 2016-07-07 国立大学法人 東京大学 太陽電池
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US20170084771A1 (en) * 2015-09-21 2017-03-23 The Boeing Company Antimonide-based high bandgap tunnel junction for semiconductor devices
US10923610B2 (en) 2015-09-30 2021-02-16 Panasonic Intellectual Property Management Co., Ltd. Solar cell and solar cell module
US10784396B2 (en) * 2015-09-30 2020-09-22 Panasonic Intellectual Property Management Co., Ltd. Solar cell, solar cell module, and production method for solar cell
MD4510C1 (ro) * 2016-06-23 2018-03-31 Государственный Университет Молд0 Procedeu de creştere a structurii n+-p-p+ InP pentru celule solare
TWI601298B (zh) * 2017-02-10 2017-10-01 友達光電股份有限公司 光伏裝置
DE102017005950A1 (de) * 2017-06-21 2018-12-27 Azur Space Solar Power Gmbh Solarzellenstapel
KR101829743B1 (ko) 2017-08-29 2018-02-20 아이피랩 주식회사 밴드 갭 조정을 위한 비대칭 삼차원 격자 구조체
MD4554C1 (ro) * 2017-10-18 2018-09-30 Государственный Университет Молд0 Procedeu de majorare a eficienţei celulelor fotovoltaice pe baza p+InP-p-InP-n+CdS
DE102020001185A1 (de) 2020-02-25 2021-08-26 Azur Space Solar Power Gmbh Stapelförmige monolithische aufrecht-metamorphe lll-V-Mehrfachsolarzelle
KR102496459B1 (ko) * 2020-05-07 2023-02-03 한양대학교 산학협력단 페로브스카이트/갈륨비소 탠덤형 태양 전지 및 이의 제조방법

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