CN107863400A - 用于多结太阳能电池的InP晶格常数的II型高带隙隧道结 - Google Patents

用于多结太阳能电池的InP晶格常数的II型高带隙隧道结 Download PDF

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Publication number
CN107863400A
CN107863400A CN201710803810.4A CN201710803810A CN107863400A CN 107863400 A CN107863400 A CN 107863400A CN 201710803810 A CN201710803810 A CN 201710803810A CN 107863400 A CN107863400 A CN 107863400A
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CN
China
Prior art keywords
doping
tunnel
layer
tunnel layer
inp
Prior art date
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Pending
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CN201710803810.4A
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English (en)
Chinese (zh)
Inventor
R·L·吴
D·C·罗
J·C·布瓦维尔
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Boeing Co
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Boeing Co
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Publication date
Application filed by Boeing Co filed Critical Boeing Co
Publication of CN107863400A publication Critical patent/CN107863400A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/142—Photovoltaic cells having only PN homojunction potential barriers comprising multiple PN homojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/144—Photovoltaic cells having only PN homojunction potential barriers comprising only Group III-V materials, e.g. GaAs,AlGaAs, or InP photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/163—Photovoltaic cells having only PN heterojunction potential barriers comprising only Group III-V materials, e.g. GaAs/AlGaAs or InP/GaInAs photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/70—Tunnel-effect diodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

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  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
CN201710803810.4A 2010-11-19 2011-09-23 用于多结太阳能电池的InP晶格常数的II型高带隙隧道结 Pending CN107863400A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/950,912 2010-11-19
US12/950,912 US11417788B2 (en) 2010-11-19 2010-11-19 Type-II high bandgap tunnel junctions of InP lattice constant for multijunction solar cells
CN2011800501461A CN103189998A (zh) 2010-11-19 2011-09-23 用于多结太阳能电池的InP晶格常数的II型高带隙隧道结

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN2011800501461A Division CN103189998A (zh) 2010-11-19 2011-09-23 用于多结太阳能电池的InP晶格常数的II型高带隙隧道结

Publications (1)

Publication Number Publication Date
CN107863400A true CN107863400A (zh) 2018-03-30

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
CN201710803810.4A Pending CN107863400A (zh) 2010-11-19 2011-09-23 用于多结太阳能电池的InP晶格常数的II型高带隙隧道结
CN2011800501461A Pending CN103189998A (zh) 2010-11-19 2011-09-23 用于多结太阳能电池的InP晶格常数的II型高带隙隧道结

Family Applications After (1)

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CN2011800501461A Pending CN103189998A (zh) 2010-11-19 2011-09-23 用于多结太阳能电池的InP晶格常数的II型高带隙隧道结

Country Status (7)

Country Link
US (1) US11417788B2 (enExample)
EP (1) EP2641275B1 (enExample)
JP (1) JP2013543278A (enExample)
KR (1) KR101908742B1 (enExample)
CN (2) CN107863400A (enExample)
CA (1) CA2810895C (enExample)
WO (1) WO2012067715A2 (enExample)

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US10283658B2 (en) * 2011-02-09 2019-05-07 The Board Of Regents Of The University Of Oklahoma Interband cascade devices
CN102751367A (zh) * 2012-07-10 2012-10-24 厦门市三安光电科技有限公司 三结太阳能电池及其制备方法
GB2504977B (en) 2012-08-16 2017-10-04 Airbus Defence & Space Gmbh Laser power converter
CN102832274B (zh) * 2012-09-05 2015-01-07 天津三安光电有限公司 倒装太阳能电池及其制备方法
JP6446782B2 (ja) * 2013-03-14 2019-01-09 株式会社リコー 化合物半導体太陽電池、及び、化合物半導体太陽電池の製造方法
WO2014142340A1 (en) * 2013-03-14 2014-09-18 Ricoh Company, Ltd. Compound semiconductor photovoltaic cell and manufacturing method of the same
JP2015038952A (ja) * 2013-07-16 2015-02-26 株式会社リコー 化合物半導体太陽電池、及び、化合物半導体太陽電池の製造方法
JP6550691B2 (ja) 2013-07-30 2019-07-31 株式会社リコー 化合物半導体太陽電池
JP6582591B2 (ja) * 2014-07-11 2019-10-02 株式会社リコー 化合物半導体太陽電池、及び、化合物半導体太陽電池の製造方法
JP2016122752A (ja) * 2014-12-25 2016-07-07 国立大学法人 東京大学 太陽電池
DE102015006379B4 (de) * 2015-05-18 2022-03-17 Azur Space Solar Power Gmbh Skalierbare Spannungsquelle
US20170084771A1 (en) * 2015-09-21 2017-03-23 The Boeing Company Antimonide-based high bandgap tunnel junction for semiconductor devices
US10923610B2 (en) 2015-09-30 2021-02-16 Panasonic Intellectual Property Management Co., Ltd. Solar cell and solar cell module
US10784396B2 (en) * 2015-09-30 2020-09-22 Panasonic Intellectual Property Management Co., Ltd. Solar cell, solar cell module, and production method for solar cell
MD4510C1 (ro) * 2016-06-23 2018-03-31 Государственный Университет Молд0 Procedeu de creştere a structurii n+-p-p+ InP pentru celule solare
TWI601298B (zh) * 2017-02-10 2017-10-01 友達光電股份有限公司 光伏裝置
DE102017005950A1 (de) * 2017-06-21 2018-12-27 Azur Space Solar Power Gmbh Solarzellenstapel
KR101829743B1 (ko) 2017-08-29 2018-02-20 아이피랩 주식회사 밴드 갭 조정을 위한 비대칭 삼차원 격자 구조체
MD4554C1 (ro) * 2017-10-18 2018-09-30 Государственный Университет Молд0 Procedeu de majorare a eficienţei celulelor fotovoltaice pe baza p+InP-p-InP-n+CdS
DE102020001185A1 (de) 2020-02-25 2021-08-26 Azur Space Solar Power Gmbh Stapelförmige monolithische aufrecht-metamorphe lll-V-Mehrfachsolarzelle
KR102496459B1 (ko) * 2020-05-07 2023-02-03 한양대학교 산학협력단 페로브스카이트/갈륨비소 탠덤형 태양 전지 및 이의 제조방법

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Publication number Publication date
US11417788B2 (en) 2022-08-16
EP2641275B1 (en) 2022-07-06
WO2012067715A3 (en) 2012-12-06
KR101908742B1 (ko) 2018-10-16
CN103189998A (zh) 2013-07-03
CA2810895A1 (en) 2012-05-24
JP2013543278A (ja) 2013-11-28
CA2810895C (en) 2018-10-16
US20120125392A1 (en) 2012-05-24
KR20140009119A (ko) 2014-01-22
WO2012067715A2 (en) 2012-05-24
EP2641275A2 (en) 2013-09-25

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Application publication date: 20180330

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